Numemory has introduced the NM101, a 64 Gb storage-class memory module that uses technology similar to Intel's now-discontinued Optane architecture. The device implements phase-change memory and crossbar technology in a 3D selector-only memory structure, matching Optane's 3200 MT/s transfer rate specification. The technical architecture diverges from Intel's implementation by using a single selector in its cross-point structure rather than the dual-selector approach of 3D XPoint memory. Operating at 1.2 V with an X8 bus width, the NM101 uses 3D stacking to achieve claimed performance metrics of 10x faster read/write speeds than NAND flash. Xincun Technology, which established the Numemory division in Wuhan in 2022, holds 273 patents related to the technology, including 60 international and 213 Chinese patents. The company's R&D team of 144 engineers has developed the architecture since 2019, three years before Intel ended its Optane program.

Production plans specify an initial manufacturing target of 10,000 units monthly by the end of 2025. Guao Technology has committed ¥10 billion to establish production facilities in Zhejiang province, with additional funding from the Anji county government. The NM101's operating temperature range spans 0-70°C, suitable for standard data center environments. While the device's specifications suggest the potential for data center deployment, specific IOPS and latency metrics remain unpublished. Initial production will serve domestic Chinese servers and storage manufacturers. The technology's viability in mass production remains to be demonstrated, particularly given the manufacturing challenges that contributed to Optane's market exit. The Chinese internal market is massive, so serving only domestic companies could be enough for Numemory at the beginning. If the company continues development, worldwide expansion could pick up where Optane stopped.

Kioxia Corporation and Sandisk Corporation have pioneered a state-of-the-art 3D flash memory technology, setting the industry benchmark with a 4.8 Gb/s NAND interface speed, superior power efficiency, and heightened density

Unveiled at ISSCC 2025, the new 3D flash memory innovation, together with the companies' revolutionary CBA (CMOS directly Bonded to Array) technology, incorporates one of the latest interface standards, Toggle DDR6.0 for NAND flash memory, and leverages the SCA (Separate Command Address) protocol, a novel command address input method of its interface, and PI-LTT (Power Isolated Low-Tapped Termination) technology, which is instrumental in further reducing power consumption.

During its first post-Western Digital spinoff investor day, SanDisk showed something it has been working on to tackle the AI sector. High-bandwidth flash (HBF) is a new memory architecture that combines 3D NAND flash storage with bandwidth capabilities comparable to high-bandwidth memory (HBM). The HBF design stacks 16 3D NAND BiCS8 dies using through-silicon vias, with a logic layer enabling parallel access to memory sub-arrays. This configuration achieves 8 to 16 times greater capacity per stack than current HBM implementations. A system using eight HBF stacks can provide 4 TB of VRAM to store large AI models like GPT-4 directly on GPU hardware. The architecture breaks from conventional NAND design by implementing independently accessible memory sub-arrays, moving beyond traditional multi-plane approaches. While HBF surpasses HBM's capacity specifications, it maintains higher latency than DRAM, limiting its application to specific workloads.

SanDisk has not disclosed its solution for NAND's inherent write endurance limitations, though using pSLC NAND makes it possible to balance durability and cost. The bandwidth of HBF is also unknown, as the company hasn't put out details yet. SanDisk Memory Technology Chief Alper Ilkbahar confirmed the technology targets read-intensive AI inference tasks rather than latency-sensitive applications. The company is developing HBF as an open standard, incorporating mechanical and electrical interfaces similar to HBM to simplify integration. Some challenges remain, including NAND's block-level addressing limitations and writing endurance constraints. While these factors make HBF unsuitable for gaming applications, the technology's high capacity and throughput characteristics align with AI model storage and inference requirements. SanDisk has announced plans for three generations of HBF development, indicating a long-term commitment to the technology.

Scientists have made a big step forward in data storage technology, they've managed to improve the manufacturing process for 3D NAND flash memory. This type of storage technology stacks memory cells on top of each other to obtain higher data density. A team of experts from Lam Research, the University of Colorado Boulder, and Princeton Plasma Physics Lab came up with a better way to etch (the process of carving holes into alternating layers of silicon oxide and silicon nitride) by using hydrogen fluoride plasma. This new method cuts vertical channels through silicon-based materials twice as fast as before achieving 640 nanometers in just one minute.

The team found out that mixing in certain chemicals like phosphorus trifluoride helps the etching process. They also learned that some byproducts can slow down etching, but adding water can help fix this problem. "The salt can decompose at a lower temperature when water is present, which can accelerate etching", said Yuri Barsukov, a former PPPL researcher now working at Lam Research. This breakthrough is important as the need for data storage received a huge boost with the rise of AI programs, that need tons of storage.

Kioxia had a small dugout at the 2025 International CES. The NAND flash major tends to have a much bigger booth at FMS than CES. The one in Vegas had its latest enterprise SSDs, all of which were launched through 2024, and a couple of new things. We first got a practical demo of how Kioxia achieves 218 layers of NAND flash in its latest generation of BiCS Flash using an architectural innovation called CBA—CMOS directly bonded to array. In CBA, the cell array acts like a pizza topping to the crust that is the CMOS layer, rather than being arranged side-by-side. This allows for greater density of flash cells. This also has certain performance and power advantages.

Next up, the company showed us their automotive-grade UFS 4.0 non-volatile storage device, which uses the latest 218-layer 3D NAND flash memory. This device was announced toward the end of 2024, and gathered a salad of certifications that make it fit for the latest generation of automobiles with advanced technology such as FSD, or an infotainment system that's practically as powerful as a PC. We also got a fascinating look at the testbed Kioxia uses to validate its automotive UFS 4.0 devices.

Micron at the 2025 International CES showed us product that hint at the company planning a strong comeback to the client and PC-DIY market segments. The company's Crucial brand is already a high-volume player in the client segment, but the company never really approached the enthusiast segment. Products like the company's new T705 Pro and P510 NVMe SSDs, and DDR5 Pro Overclocking memory, seek to change this. We begin our tour with PC memory, and the DDR5 Pro OC CUDIMMs. Crucial has jumped onto the CKD bandwagon, introducing memory modules and kits that come with DDR5-6400 out of the box, but which are geared for manual overclocking to take advantage of the 1β DRAM chips underneath (hence the name).

The company also showed us their first DDR5 CSODIMM suitable for the next generation of notebooks with HX-segment processors. This module comes with a CKD and a DDR5-6400 JEDEC-standard SPD profile out of the box. Lastly, there's the Micron-branded LPCAMM2, which comes in speeds of up to LPDDR5X-8533, and is suitable for the next generation of ultraportables.

This week at CES 2025, KIOXIA America, Inc. will highlight the transformative potential of flash memory. As pioneers of NAND flash technology, KIOXIA will demonstrate how its innovative solutions empower users to achieve more, tackle challenges, and unlock creativity—making everyday moments and groundbreaking innovations possible.

Visitors to the KIOXIA exhibit will discover how flash memory is redefining storage for a digital-first world. The company will showcase cutting-edge solutions for diverse industries, from memory and SSDs for artificial intelligence and automotive to flash products for consumer and industrial applications.

At CES 2025, we found the SSD controller that will spur high-end NVMe Gen 5 SSD adoption. Until now, high-end Gen 5 SSDs were driven by Phison's E26 series controller that the company built on TSMC's 12 nm process. The company on Monday launched the new E28 series controller (full name PS5028-E28). This chip is built on the much more advanced TSMC 6 nm process. The new process lets Phison to significantly lower the electrical cost of its NAND flash interface serializer-deserializer, and step up performance closer to the interface limits of PCI-Express 5.0 x4. The controller offers sequential speeds of up to 14.5 GB/s, which is an increase from last year's E26 Max14um variant.

The company showed us the bare E28 controller chip, and a reference-design SSD based on it. Not much to report, except that the drive lacked any cooling solution. Production SSDs powered by the E28 will still need heatsinks to achieve optimal performance, although they won't run as hot as drives powered by the E26. The company didn't have any performance demo stations set up with this drive.

Transcend Information Inc. (Transcend) a global leader in storage solutions, introduces the new ETD210T enterprise 2.5-inch SSD, designed to meet the read-intensive needs of business users. Featuring enterprise-grade TLC (eTLC) NAND flash and a SATA III 6 Gb/s interface, the ETD210T includes a built-in DRAM cache to deliver fast data transfer, exceptional Quality of Service (QoS), ultra-low latency, and superior endurance. Ideal for read-intensive and high-capacity storage workloads in cloud and data center applications, it provides a reliable and efficient storage solution for enterprise computing.

Designed for Enterprises, Optimized for Data Centers
The ETD210T supports various enterprise applications, including data centers, virtualized servers, and large-scale data processing. Equipped with high-endurance eTLC NAND flash, it delivers exceptional read and write performance. Its endurance rating of DWPD = 1 meets the requirements of most enterprise-class applications, while its read and write speeds of up to 530 MB/s and 510 MB/s, respectively, address the need for highly efficient storage.

Chinese semiconductor memory giant YMTC is reportedly manufacturing anywhere between 400-500,000 wafers per year of leading-edge NAND memory, all on domestically produced wafers. According to Mayuki Hashimoto, CEO and Chairman of SUMCO, a Japanese company supplying raw silicon ingots and polished wafers, they are seeing a significant business impact stemming from China's growing self-reliance, especially with companies like YMTC producing its own silicon ingots and polished wafers. This has led to SUMCO's decreasing revenue, where the CEO shared some insights about Chinese ambitions. He added that China is producing about one million wafers of silicon per year, most of which are test wafers. This includes test runs from companies like SMIC and its customers, such as T-Head, HiSilicon, and others.

Last year, YMTC, with its Xtacking 4.0 3D NAND flash architecture, was the first company to achieve a 200+ layer count in the 3D NAND space. The company's product, X4-9070, a 232-layer TLC 3D NAND, uses multiple silicon wafers, hence growing its massive consumption of silicon that is projected to reach 500,000 wafers per year. Given that this is all homegrown silicon from ingots to NAND, this is a massive success for Chinese self-reliance efforts but a huge blow to companies that used to supply Chinese firms with raw materials. Although the company uses custom silicon, it still relies on foreign tools, photoresists, and pre-cursors. There are some indications that YMTC is developing its own tools; it is a plan of a broader strategy in the Chinese semiconductor industry to develop every step of the semiconductor manufacturing process. Huawei is also there to develop EUV scanners, and YMTC could help with its memory business, which is in need of a new tool.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD230G: NAND Flash Interface Interoperability Standard. JESD230G introduces speeds of up to 4800 MT/s, as compared to 400 MT/s in the first version of JESD230 published in 2011. Also, JESD230G adds a separate Command/Address Bus Protocol (SCA), delivering enhanced throughput and efficiency by allowing hosts and NAND devices to take maximum advantage of the latest interface speeds. JESD230G is available for free download from the JEDEC website.

"JEDEC is excited to release JESD230G," said David Landsman, Distinguished Engineer at Western Digital and Chair of the JEDEC NAND TG. He added, "This version of JESD230 further advances the capabilities of NAND flash devices to meet the growing demands of their expanding range of applications and continues the JEDEC tradition of building interoperable ecosystems through open industry standards."

Transcend Information Inc. (Transcend ), a leading global manufacturer of memory storage solutions, announces the launch of its new CFX735 and CFX735I CFast cards. These cards feature built-in write protection technology, designed specifically for professional applications that require secure data storage and stable, high-performance write capabilities.

Leveraging 112-layer 3D NAND flash technology and a SATA III 6 Gb/s interface, this series offers exceptional read/write speeds and large storage capacities. Whether you're dealing with data-intensive applications or operating in demanding environments, these cards deliver reliable performance. The CFX735 operates in a temperature range of -5°C to 70°C, while the CFX735I is built for extreme environments, functioning reliably from -40°C to 85°C, perfect for outdoor and temperature fluctuating scenarios.

Solidigm, a leading provider of innovative NAND flash memory solutions, announced today the introduction of the world's highest capacity PCIe solid-state drive (SSD): the 122 TB (terabyte) Solidigm D5-P5336 data center SSD. The D5-P5336 doubles the storage space of Solidigm's earlier 61.44 TB version of the drive and is the world's first SSD with unlimited Random Write endurance for five years—offering an ideal solution for AI and data-intensive workloads. Just how much storage is 122.88 TB? Roughly enough for 4K-quality copies of every movie theatrically released in the 1990s, 2.6 times over.

Data storage power, thermal and space constraints are accelerating as AI adoption increases. Power and space-efficient, the new 122 TB D5-P5336 delivers industry-leading storage efficiency from the core data center to the edge. Data center operators can deploy with confidence the 122 TB D5-P5336 from Solidigm, the proven QLC (quad-level cell) density leader with more than 100EB (exabytes) of QLC-based product shipped since 2018.

Both pictures and videos of a partial teardown of Apple's recently launched Mac mini with the M4 SoC have appeared online courtesy of various Chinese sources. There are at least two interesting parts to these partial teardowns and they're related to storage and WiFi. On the storage front, Apple has moved away from having soldered NAND chips straight on the main PCB of the Mac mini, to instead having them on a custom PCB which is similar to M.2, but a custom Apple design. The PCB pictured contained a pair of 128 GB NAND chips and with the source of the teardown being from China, there's also a video showing a repair shop desoldering the two chips and replacing them with two 1 TB chips, or in other words, the SSD was upgraded from 256 GB to 2 TB.

The upgrade brought with it some extra performance as well, even if the write speed remained at a comparatively slow 2900 MB/s, the read speed went up from 2000 MB/s to 3300 MB/s which is a significant gain in performance. This is obviously not a consumer friendly upgrade path, but we'd expect to see third party upgrade options at some point in the future, assuming there's no black listing of third party storage modules. The NAND controller is still likely to be integrated into Apple's SoC, but the PCB that the NAND flash chips are mounted onto appears to have some kind of SPI flash on it as well, which might make third party upgrades a lot harder.

Samsung is currently mass-producing its 9th generation V-NAND flash memory chips with 286 layers unveiled this April. According to the Korean Economic Daily, the company targets V-NAND memory chips with at least 400 stacked layers by 2026. In 2013, Samsung became the first company to introduce V-NAND chips with vertically stacked memory cells to maximize capacity. However, stacking beyond 300 levels proved to be a real challenge with the memory chips getting frequently damaged. To address this problem, Samsung is reportedly developing an improved 10th-generation V-NAND that is going to use the Bonding Vertical (BV) NAND technology. The idea is to manufacture the storage and peripheral circuits on separate layers before bonding them vertically. This is a major shift from the current Co-Packaged (CoP) technology. Samsung stated that the new method will increase the density of bits per unit area by 1.6 times (60%), thus leading to increased data speeds.

Samsung's roadmap is truly ambitious, with plans to launch the 11th generation of NAND in 2027 with an estimated 50% improvement in I/O rates, followed by 1,000-layer NAND chips by 2030. Its competitor, SK hynix, is also working on 400-layer NAND aiming to have the technology ready for mass production by the end of 2025, as we previously mentioned in August. Samsung, the current HBM market leader with a 36.9% market share have also plans for its DRAM sector intending to introduce the sixth-generation 10 nm DRAM, or 1c DRAM by the first half of 2025. Then we can expect to see Samsung's seventh-generation 1d nm (still on 10 nm) in 2026, and by 2027 the company hopes to release its first generation sub-10 nm DRAM, or 0a DRAM memory that will use a Vertical Channel Transistor (VCT) 3D structure similar to what NAND flash utilizes.

Recent reports from South China Morning Post unveil developments in China's semiconductor industry, with significant progress in two critical areas: advanced memory chips and silicon photonics. These breakthroughs mark important steps in the country's pursuit of technological self-reliance amid global trade tensions. In Wuhan, a startup called Numemory has unveiled a new storage-class memory (SCM) chip. The "NM101" chip boasts an impressive 64 GB capacity, far surpassing the megabyte-range offerings currently dominating the market. This novel chip blends the strengths of traditional DRAM and NAND flash storage, delivering rapid, non-volatile, persistent memory ideal for server and data center applications. The NM101's design prioritizes high capacity, density, and bandwidth while maintaining low latency. These characteristics make it particularly well-suited for data centers and cloud computing infrastructures. Initial reports suggest that storage devices incorporating this SCM technology can write an entire 10 GB high-definition video file in a mere second.

Concurrently, another Wuhan-based institution, JFS Laboratory, has achieved a milestone in silicon photonics research. The state-backed facility successfully merged a laser light source with a silicon chip, a feat previously unrealized in China. This innovation in silicon photonics leverages light signals for data transmission, potentially circumventing the looming physical constraints of traditional electric signal-based chip designs. This accomplishment is viewed as addressing a crucial gap in China's optoelectronics capabilities, which used to lag behind Western chip designers and startups. Using silicon photonics, infrastructure scale-out can be sustained on a much larger scale without significant power consumption increase. While these developments represent significant progress, it's important to note that bridging the gap between laboratory breakthroughs and mass-produced, commercially viable products remains a substantial challenge. The path from research success to market dominance is often long and complex, requiring sustained investment and further technological refinement.

Western Digital made a significant change to the way it sells its products, which sees the SanDisk brand return to prominence. The company spun out SanDisk.com as a separate website, with product information, support, and in select regions, online retail, of all its NAND flash-based products, including SSDs, memory cards, USB flash drives, etc. Meanwhile, its main website, WesternDigital.com, now only lists out non-flash products, such as hard disk drives (HDDs), NAS, and other enterprise hardware such as rackmount DAS or NAS.

The decision splits WD's portfolio vertically, regardless of market. SanDisk now includes both client- and enterprise flash-based products, while Western Digital covers both enterprise, SMB, and client HDDs, including HDDs with gamer centric WD_Black branding. Meanwhile, the SanDisk website includes all of Western Digital's flash-based products, including SSDs and portable SSDs that retain the Western Digital brand. So, the easiest way to understand this split would be: if it has disks that spin, find them on WesternDigital.com, and if it's solid-state, find it on SanDisk.com.

Transcend Information Inc. (Transcend), a global leader in industrial memory storage, is proud to announce its first industrial-grade PCIe M.2 22110 SSD, the MTE730P. This SSD features Power Loss Protection (PLP) technology, ensuring robust data integrity even in the most demanding environments. With PCIe Gen 4 performance and capacities of up to 4 TB, the MTE730P meets the needs of high-end industrial automation, blade servers, data centers, and other modern storage applications.

Power Loss Protection: Create Higher Data Integrity
The MTE730P's Power Loss Protection (PLP) technology is a critical feature for applications such as automated manufacturing, medical systems, transportation systems, and financial transaction. It ensures that the built-in tantalum capacitors provide power to the controller and DRAM cache during power fluctuations or outages, guaranteeing maximum data integrity and security.

Nextorage announces the release of its new G Series ME gaming SSD, this M.2 2230 SSD is designed for compact gaming PCs and tablet PCs, combining PCIe 4.0 high-speed performance with DRAM-less power saving. The G Series ME offers impressive specifications with sequential read speeds up to 7,400 MB/s and write speeds up to 6,200 MB/s. Random read and write speeds are rated at 750,000 IOPS and 850,000 IOPS respectively. Available in 1 TB and 2 TB models, the drives feature write endurance of 600 TBW for the 1 TB model and 1,200 TBW for the 2 TB model, both backed by a five-year warranty.

Both models use single-sided 3D TLC NAND Flash, ensuring compatibility with M.2 2230 slots and improved cooling due to top-mounted NAND. The SSD employs DRAM-less technology, utilizing the latest controller and 3D TLC NAND flash to balance speed and power efficiency. To compensate for the lack of DRAM caching, Nextorage implements a "Large-capacity Dynamic SLC Cache," converting unused space into an SLC cache for enhanced performance.

Samsung Electronics America, the leader in advanced memory technology, announced new 512 GB capacities for its BAR Plus and FIT Plus USB 3.2 Gen 1 Flash Drives. The newest drives introduce more storage capacity to the lineup in the same sleek designs, perfect for storing your favorite tunes, irreplaceable photos/videos, and important work or school documents. These USB flash drives help you back up your data and save time thanks to their high capacity, quick speeds, wide device compatibility, and reliability.

"We recognize that professionals across the U.S. have more data storage needs than ever. That's why we're introducing a new size option within our cutting-edge BAR Plus and FIT Plus USB Flash Drive line-up, ensuring there is a storage solution for everyone," said Jose Hernandez, Senior Director of Memory Product Marketing at Samsung. "The drives are also intentionally designed to fit your personal style - whether you prefer something sleek and modern or unassuming and traditional, you can always be plugged in."

Winbond Electronics Corporation, a leading global supplier of semiconductor solutions, has unveiled the W25N01KW, a 1 GB 1.8 V QspiNAND flash. This new NAND solution is designed to meet the increasing demands of wearable and battery-operated IoT devices with low standby power, small-form-factor package, and continuous read for fast boot and instant-on support.

The W25N01KW flash memory stands out for its high-speed read capabilities, achieving speeds up to 52 MB/sec in both Continuous Read and Sequential Read modes. The fast boot and instant-on support enhance energy efficiency and extend the devices' operational lifespan. It also offers an advanced deep power-down mode that reduces power consumption to as low as 1µA. The W25N01KW comes in a small form factor and is available in compact WSON8 (8 mm x 6 mm) and WSON8 (6 mm x 5 mm) packages. These exceptional features ensure ultra-fast code/data access, longer battery life, and compact design, contributing to an optimized user experience across various applications.

Today, Solidigm, a leading provider of innovative NAND flash memory solutions, announced the launch of the Solidigm D7-PS1010 and D7-PS1030 data center solid-state drives (SSDs). As the fastest PCIe 5.0 SSDs shipping in volume today, these drives are well suited for the IO intensity found in modern mainstream, mixed, and write-centric workloads.

"The Solidigm D7-PS1010 and D7-PS1030 SSDs were meticulously engineered to meet the increasingly demanding IO requirements across a range of workloads such as general-purpose servers, OLTP, server-based storage, decision support systems and AI/ML," said Greg Matson, Senior Vice President of Strategic Planning and Marketing at Solidigm. "In a world where every watt counts, these drives are PCIe 5.0 done right, not only delivering industry-leading four-corner performance, but also up to 70% better energy efficiency compared to similar drives by other manufacturers."

Silicon Motion Technology Corporation, a global leader in designing and marketing NAND flash controllers for solid-state storage devices, today announced SM2508, the best power efficiency PCIe Gen 5 NVMe 2.0 client SSD controller for AI PCs and gaming consoles. It's the world's first PCIe Gen 5 client SSD controller using TSMC's 6 nm EUV process, offering a 50% reduction in power consumption compared to competitive offerings in the 12 nm process. With less than 7 W power consumption for the entire SSD, it delivers 1.7x better power efficiency than PCIe Gen 4 SSDs and up to 70% better than current competitive PCIe Gen 5 offerings on the market. Silicon Motion will be showcasing its SM2508 based SSD design and other innovations during the Future of Memory and Storage event from Aug. 6 to 8 at booth #315:

Silicon Motion's SM2508 is a superior-performance, low-power PCIe Gen 5 x4 NVMe 2.0 SSD controller designed for AI-capable PC notebooks. It supports eight NAND channels with up to 3,600 MT/s per channel, delivering sequential performance speeds of up to 14.5 GB/s and 13.6 GB/s and random performance speeds of up to 2.5M IOPS, providing up to 2x higher performance than PCIe Gen 4 products. The SM2508 maximizes PCIe Gen 5 performance with an impressive power consumption of approximately 3 W. It features Silicon Motion's proprietary 8th-generation NANDXtend technology, which includes an on-disk training algorithm designed to reduce ECC timing. This enhancement boosts performance and maximizes power efficiency while ensuring compatibility with the latest 3D TLC/QLC NAND technologies, enabling higher data density and meeting the evolving demands of next-generation AI PCs.

The Artificial Intelligence (AI) boom and rapid expansion of cloud-based services are accelerating the need for data centers to be more powerful, efficient and highly reliable. To meet the growing market demands, Microchip Technology has released the Flashtec NVMe 5016 Solid State Drive (SSD) controller. The 16-channel, PCIe Gen 5 NVM Express (NVMe) controller is designed to offer higher levels of bandwidth, security and flexibility.

"Data center technology must evolve to keep up with the significant advancements occurring in AI and Machine Learning (ML). Our fifth generation Flashtec NVMe controller is designed to lead the market in fulfilling the increased need for high-performance, power-optimized SSDs," said Pete Hazen, vice president of Microchip's data center solutions business unit. "The NVMe 5016 Flashtec PCIe controller can be deployed in data centers to facilitate effective and secure cloud computing and business-critical applications."

SK hynix is reportedly developing 400-layer NAND flash memory, with plans to begin mass production by late 2025. The company is collaborating with supply chain partners to develop the necessary process technologies and equipment for 400-layer and higher NAND chips. This information comes from a recent article by Korean media outlet etnews citing industry sources.

SK hynix intends to use hybrid bonding technology to achieve this, which is expected to bring new packaging materials and components suppliers into the supply chain. The development process involves exploring new bonding materials and various technologies for connecting different wafers, including polishing, etching, deposition, and wiring. SK hynix aims to have the technology and infrastructure ready by the end of next year.