JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD230G: NAND Flash Interface Interoperability Standard. JESD230G introduces speeds of up to 4800 MT/s, as compared to 400 MT/s in the first version of JESD230 published in 2011. Also, JESD230G adds a separate Command/Address Bus Protocol (SCA), delivering enhanced throughput and efficiency by allowing hosts and NAND devices to take maximum advantage of the latest interface speeds. JESD230G is available for free download from the JEDEC website.

"JEDEC is excited to release JESD230G," said David Landsman, Distinguished Engineer at Western Digital and Chair of the JEDEC NAND TG. He added, "This version of JESD230 further advances the capabilities of NAND flash devices to meet the growing demands of their expanding range of applications and continues the JEDEC tradition of building interoperable ecosystems through open industry standards."

Transcend Information Inc. (Transcend ), a leading global manufacturer of memory storage solutions, announces the launch of its new CFX735 and CFX735I CFast cards. These cards feature built-in write protection technology, designed specifically for professional applications that require secure data storage and stable, high-performance write capabilities.

Leveraging 112-layer 3D NAND flash technology and a SATA III 6 Gb/s interface, this series offers exceptional read/write speeds and large storage capacities. Whether you're dealing with data-intensive applications or operating in demanding environments, these cards deliver reliable performance. The CFX735 operates in a temperature range of -5°C to 70°C, while the CFX735I is built for extreme environments, functioning reliably from -40°C to 85°C, perfect for outdoor and temperature fluctuating scenarios.

Solidigm, a leading provider of innovative NAND flash memory solutions, announced today the introduction of the world's highest capacity PCIe solid-state drive (SSD): the 122 TB (terabyte) Solidigm D5-P5336 data center SSD. The D5-P5336 doubles the storage space of Solidigm's earlier 61.44 TB version of the drive and is the world's first SSD with unlimited Random Write endurance for five years—offering an ideal solution for AI and data-intensive workloads. Just how much storage is 122.88 TB? Roughly enough for 4K-quality copies of every movie theatrically released in the 1990s, 2.6 times over.

Data storage power, thermal and space constraints are accelerating as AI adoption increases. Power and space-efficient, the new 122 TB D5-P5336 delivers industry-leading storage efficiency from the core data center to the edge. Data center operators can deploy with confidence the 122 TB D5-P5336 from Solidigm, the proven QLC (quad-level cell) density leader with more than 100EB (exabytes) of QLC-based product shipped since 2018.

Both pictures and videos of a partial teardown of Apple's recently launched Mac mini with the M4 SoC have appeared online courtesy of various Chinese sources. There are at least two interesting parts to these partial teardowns and they're related to storage and WiFi. On the storage front, Apple has moved away from having soldered NAND chips straight on the main PCB of the Mac mini, to instead having them on a custom PCB which is similar to M.2, but a custom Apple design. The PCB pictured contained a pair of 128 GB NAND chips and with the source of the teardown being from China, there's also a video showing a repair shop desoldering the two chips and replacing them with two 1 TB chips, or in other words, the SSD was upgraded from 256 GB to 2 TB.

The upgrade brought with it some extra performance as well, even if the write speed remained at a comparatively slow 2900 MB/s, the read speed went up from 2000 MB/s to 3300 MB/s which is a significant gain in performance. This is obviously not a consumer friendly upgrade path, but we'd expect to see third party upgrade options at some point in the future, assuming there's no black listing of third party storage modules. The NAND controller is still likely to be integrated into Apple's SoC, but the PCB that the NAND flash chips are mounted onto appears to have some kind of SPI flash on it as well, which might make third party upgrades a lot harder.

Samsung is currently mass-producing its 9th generation V-NAND flash memory chips with 286 layers unveiled this April. According to the Korean Economic Daily, the company targets V-NAND memory chips with at least 400 stacked layers by 2026. In 2013, Samsung became the first company to introduce V-NAND chips with vertically stacked memory cells to maximize capacity. However, stacking beyond 300 levels proved to be a real challenge with the memory chips getting frequently damaged. To address this problem, Samsung is reportedly developing an improved 10th-generation V-NAND that is going to use the Bonding Vertical (BV) NAND technology. The idea is to manufacture the storage and peripheral circuits on separate layers before bonding them vertically. This is a major shift from the current Co-Packaged (CoP) technology. Samsung stated that the new method will increase the density of bits per unit area by 1.6 times (60%), thus leading to increased data speeds.

Samsung's roadmap is truly ambitious, with plans to launch the 11th generation of NAND in 2027 with an estimated 50% improvement in I/O rates, followed by 1,000-layer NAND chips by 2030. Its competitor, SK hynix, is also working on 400-layer NAND aiming to have the technology ready for mass production by the end of 2025, as we previously mentioned in August. Samsung, the current HBM market leader with a 36.9% market share have also plans for its DRAM sector intending to introduce the sixth-generation 10 nm DRAM, or 1c DRAM by the first half of 2025. Then we can expect to see Samsung's seventh-generation 1d nm (still on 10 nm) in 2026, and by 2027 the company hopes to release its first generation sub-10 nm DRAM, or 0a DRAM memory that will use a Vertical Channel Transistor (VCT) 3D structure similar to what NAND flash utilizes.

Recent reports from South China Morning Post unveil developments in China's semiconductor industry, with significant progress in two critical areas: advanced memory chips and silicon photonics. These breakthroughs mark important steps in the country's pursuit of technological self-reliance amid global trade tensions. In Wuhan, a startup called Numemory has unveiled a new storage-class memory (SCM) chip. The "NM101" chip boasts an impressive 64 GB capacity, far surpassing the megabyte-range offerings currently dominating the market. This novel chip blends the strengths of traditional DRAM and NAND flash storage, delivering rapid, non-volatile, persistent memory ideal for server and data center applications. The NM101's design prioritizes high capacity, density, and bandwidth while maintaining low latency. These characteristics make it particularly well-suited for data centers and cloud computing infrastructures. Initial reports suggest that storage devices incorporating this SCM technology can write an entire 10 GB high-definition video file in a mere second.

Concurrently, another Wuhan-based institution, JFS Laboratory, has achieved a milestone in silicon photonics research. The state-backed facility successfully merged a laser light source with a silicon chip, a feat previously unrealized in China. This innovation in silicon photonics leverages light signals for data transmission, potentially circumventing the looming physical constraints of traditional electric signal-based chip designs. This accomplishment is viewed as addressing a crucial gap in China's optoelectronics capabilities, which used to lag behind Western chip designers and startups. Using silicon photonics, infrastructure scale-out can be sustained on a much larger scale without significant power consumption increase. While these developments represent significant progress, it's important to note that bridging the gap between laboratory breakthroughs and mass-produced, commercially viable products remains a substantial challenge. The path from research success to market dominance is often long and complex, requiring sustained investment and further technological refinement.

Western Digital made a significant change to the way it sells its products, which sees the SanDisk brand return to prominence. The company spun out SanDisk.com as a separate website, with product information, support, and in select regions, online retail, of all its NAND flash-based products, including SSDs, memory cards, USB flash drives, etc. Meanwhile, its main website, WesternDigital.com, now only lists out non-flash products, such as hard disk drives (HDDs), NAS, and other enterprise hardware such as rackmount DAS or NAS.

The decision splits WD's portfolio vertically, regardless of market. SanDisk now includes both client- and enterprise flash-based products, while Western Digital covers both enterprise, SMB, and client HDDs, including HDDs with gamer centric WD_Black branding. Meanwhile, the SanDisk website includes all of Western Digital's flash-based products, including SSDs and portable SSDs that retain the Western Digital brand. So, the easiest way to understand this split would be: if it has disks that spin, find them on WesternDigital.com, and if it's solid-state, find it on SanDisk.com.

Transcend Information Inc. (Transcend), a global leader in industrial memory storage, is proud to announce its first industrial-grade PCIe M.2 22110 SSD, the MTE730P. This SSD features Power Loss Protection (PLP) technology, ensuring robust data integrity even in the most demanding environments. With PCIe Gen 4 performance and capacities of up to 4 TB, the MTE730P meets the needs of high-end industrial automation, blade servers, data centers, and other modern storage applications.

Power Loss Protection: Create Higher Data Integrity
The MTE730P's Power Loss Protection (PLP) technology is a critical feature for applications such as automated manufacturing, medical systems, transportation systems, and financial transaction. It ensures that the built-in tantalum capacitors provide power to the controller and DRAM cache during power fluctuations or outages, guaranteeing maximum data integrity and security.

Nextorage announces the release of its new G Series ME gaming SSD, this M.2 2230 SSD is designed for compact gaming PCs and tablet PCs, combining PCIe 4.0 high-speed performance with DRAM-less power saving. The G Series ME offers impressive specifications with sequential read speeds up to 7,400 MB/s and write speeds up to 6,200 MB/s. Random read and write speeds are rated at 750,000 IOPS and 850,000 IOPS respectively. Available in 1 TB and 2 TB models, the drives feature write endurance of 600 TBW for the 1 TB model and 1,200 TBW for the 2 TB model, both backed by a five-year warranty.

Both models use single-sided 3D TLC NAND Flash, ensuring compatibility with M.2 2230 slots and improved cooling due to top-mounted NAND. The SSD employs DRAM-less technology, utilizing the latest controller and 3D TLC NAND flash to balance speed and power efficiency. To compensate for the lack of DRAM caching, Nextorage implements a "Large-capacity Dynamic SLC Cache," converting unused space into an SLC cache for enhanced performance.

Samsung Electronics America, the leader in advanced memory technology, announced new 512 GB capacities for its BAR Plus and FIT Plus USB 3.2 Gen 1 Flash Drives. The newest drives introduce more storage capacity to the lineup in the same sleek designs, perfect for storing your favorite tunes, irreplaceable photos/videos, and important work or school documents. These USB flash drives help you back up your data and save time thanks to their high capacity, quick speeds, wide device compatibility, and reliability.

"We recognize that professionals across the U.S. have more data storage needs than ever. That's why we're introducing a new size option within our cutting-edge BAR Plus and FIT Plus USB Flash Drive line-up, ensuring there is a storage solution for everyone," said Jose Hernandez, Senior Director of Memory Product Marketing at Samsung. "The drives are also intentionally designed to fit your personal style - whether you prefer something sleek and modern or unassuming and traditional, you can always be plugged in."

Winbond Electronics Corporation, a leading global supplier of semiconductor solutions, has unveiled the W25N01KW, a 1 GB 1.8 V QspiNAND flash. This new NAND solution is designed to meet the increasing demands of wearable and battery-operated IoT devices with low standby power, small-form-factor package, and continuous read for fast boot and instant-on support.

The W25N01KW flash memory stands out for its high-speed read capabilities, achieving speeds up to 52 MB/sec in both Continuous Read and Sequential Read modes. The fast boot and instant-on support enhance energy efficiency and extend the devices' operational lifespan. It also offers an advanced deep power-down mode that reduces power consumption to as low as 1µA. The W25N01KW comes in a small form factor and is available in compact WSON8 (8 mm x 6 mm) and WSON8 (6 mm x 5 mm) packages. These exceptional features ensure ultra-fast code/data access, longer battery life, and compact design, contributing to an optimized user experience across various applications.

Today, Solidigm, a leading provider of innovative NAND flash memory solutions, announced the launch of the Solidigm D7-PS1010 and D7-PS1030 data center solid-state drives (SSDs). As the fastest PCIe 5.0 SSDs shipping in volume today, these drives are well suited for the IO intensity found in modern mainstream, mixed, and write-centric workloads.

"The Solidigm D7-PS1010 and D7-PS1030 SSDs were meticulously engineered to meet the increasingly demanding IO requirements across a range of workloads such as general-purpose servers, OLTP, server-based storage, decision support systems and AI/ML," said Greg Matson, Senior Vice President of Strategic Planning and Marketing at Solidigm. "In a world where every watt counts, these drives are PCIe 5.0 done right, not only delivering industry-leading four-corner performance, but also up to 70% better energy efficiency compared to similar drives by other manufacturers."

Silicon Motion Technology Corporation, a global leader in designing and marketing NAND flash controllers for solid-state storage devices, today announced SM2508, the best power efficiency PCIe Gen 5 NVMe 2.0 client SSD controller for AI PCs and gaming consoles. It's the world's first PCIe Gen 5 client SSD controller using TSMC's 6 nm EUV process, offering a 50% reduction in power consumption compared to competitive offerings in the 12 nm process. With less than 7 W power consumption for the entire SSD, it delivers 1.7x better power efficiency than PCIe Gen 4 SSDs and up to 70% better than current competitive PCIe Gen 5 offerings on the market. Silicon Motion will be showcasing its SM2508 based SSD design and other innovations during the Future of Memory and Storage event from Aug. 6 to 8 at booth #315:

Silicon Motion's SM2508 is a superior-performance, low-power PCIe Gen 5 x4 NVMe 2.0 SSD controller designed for AI-capable PC notebooks. It supports eight NAND channels with up to 3,600 MT/s per channel, delivering sequential performance speeds of up to 14.5 GB/s and 13.6 GB/s and random performance speeds of up to 2.5M IOPS, providing up to 2x higher performance than PCIe Gen 4 products. The SM2508 maximizes PCIe Gen 5 performance with an impressive power consumption of approximately 3 W. It features Silicon Motion's proprietary 8th-generation NANDXtend technology, which includes an on-disk training algorithm designed to reduce ECC timing. This enhancement boosts performance and maximizes power efficiency while ensuring compatibility with the latest 3D TLC/QLC NAND technologies, enabling higher data density and meeting the evolving demands of next-generation AI PCs.

The Artificial Intelligence (AI) boom and rapid expansion of cloud-based services are accelerating the need for data centers to be more powerful, efficient and highly reliable. To meet the growing market demands, Microchip Technology has released the Flashtec NVMe 5016 Solid State Drive (SSD) controller. The 16-channel, PCIe Gen 5 NVM Express (NVMe) controller is designed to offer higher levels of bandwidth, security and flexibility.

"Data center technology must evolve to keep up with the significant advancements occurring in AI and Machine Learning (ML). Our fifth generation Flashtec NVMe controller is designed to lead the market in fulfilling the increased need for high-performance, power-optimized SSDs," said Pete Hazen, vice president of Microchip's data center solutions business unit. "The NVMe 5016 Flashtec PCIe controller can be deployed in data centers to facilitate effective and secure cloud computing and business-critical applications."

SK hynix is reportedly developing 400-layer NAND flash memory, with plans to begin mass production by late 2025. The company is collaborating with supply chain partners to develop the necessary process technologies and equipment for 400-layer and higher NAND chips. This information comes from a recent article by Korean media outlet etnews citing industry sources.

SK hynix intends to use hybrid bonding technology to achieve this, which is expected to bring new packaging materials and components suppliers into the supply chain. The development process involves exploring new bonding materials and various technologies for connecting different wafers, including polishing, etching, deposition, and wiring. SK hynix aims to have the technology and infrastructure ready by the end of next year.

Lam Research Corp. today extended its leadership in 3D NAND flash memory etching with the introduction of Lam Cryo 3.0, the third generation of the company's production-proven cryogenic dielectric etch technology. As the proliferation of generative artificial intelligence (AI) continues to propel the demand for memory with higher capacity and performance, Lam Cryo 3.0 provides etch capabilities critical for the manufacturing of future leading-edge 3D NAND. Leveraging ultra cold temperatures, high power confined plasma reactor technology, and innovations in surface chemistry, Lam Cryo 3.0 etches with industry-leading precision and profile control.

"Lam Cryo 3.0 paves the way for customers on the path to 1,000-layer 3D NAND," said Sesha Varadarajan, senior vice president of Global Products Group at Lam Research. "With five million wafers already manufactured using Lam cryogenic etch, our newest technology is a breakthrough in 3D NAND production. It creates high aspect ratio (HAR) features with angstrom-level precision, while delivering lower environmental impact and more than double the etch rate of conventional dielectric processes. Lam Cryo 3.0 is the etch technology our customers need to overcome the AI era's key NAND manufacturing hurdles."

TrendForce's latest report on the memory industry reveals that DRAM and NAND Flash revenues are expected to see significant increases of 75% and 77%, respectively, in 2024, driven by increased bit demand, an improved supply-demand structure, and the rise of high-value products like HBM.

Furthermore, industry revenues are projected to continue growing in 2025, with DRAM expected to increase by 51% and NAND Flash by 29%, reaching record highs. This growth is anticipated to revive capital expenditures and boost demand for upstream raw materials, although it will also increase cost pressure for memory buyers.

Gigabyte has quietly added a new SSD to its growing lineup and this time around it's something quite different. The drive is part of Gigabyte's new AI TOP (Trillions of Operations per Second) and was announced at Computex with little fanfare. At the show, the company only announced that it would have 150x the TBW compared to regular SSDs and that it was built specifically for AI model training. What that 150x means in reality is that the 2 TB version of the AI TOP 100E SSD will deliver no less than 219,000 TBW (TeraBytes Written), whereas most high-end 2 TB consumer NVMe SSDs end up somewhere around 1,200 TBW. The 1 TB version promises 109,500 TBW and both drives have an MTBF time of 1.6 million hours and a five-year warranty.

Gigabyte didn't reveal the host controller or the exact NAND used, but the drives are said to use 3D NAND flash and both drives have a LPDDR4 DRAM cache of 1 or 2 GB depending on the drive size. However, the pictures of the drive suggest it might be a Phison based reference design. The AI TOP 100E SSDs are standard PCIe 4.0 drives, so the sequential read speed tops out at 7,200 MB/s with the write speed for the 1 TB SKU being up to 6,500 MB/s, with the 2 TB SKU slightly behind at 5,900 MB/s. No other performance figures were provided. The drives are said to draw up to 11 Watts in use, which seems very high for PCIe 4.0 drives. No word on pricing or availability as yet.

On June 4th, COMPUTEX 2024 was successfully held at the Taipei Nangang Exhibition Center. Mnemonic Electronic Co., Ltd., the Taiwanese subsidiary of Longsys, showcased industry-leading high-capacity SSDs under the theme "Embracing the Era of High-Capacity SSDs." The products on display included the Mnemonic MS90 8TB SATA SSD, FORESEE ORCA 4836 series enterprise NVMe SSDs, FORESEE XP2300 PCIe Gen 4 SSDs, and rich product lines comprising embedded storage, memory modules, memory cards, and more. The company offers reliable industrial-grade, automotive-grade, and enterprise-grade storage products, providing high-capacity solutions for global users.

High-Capacity SSDs
For SSDs, Mnemonic Electronic presented products in various form factors and interfaces, including PCIe M.2, PCIe BGA, SATA M.2, and SATA 2.5-inch. The Mnemonic MS90 8 TB SATA SSD supports the SATA interface with a speed of up to 6 Gb/s (Gen 3) and is backward compatible with Gen 1 and Gen 2. It also supports various SATA low-power states (Partial/Sleep/Device Sleep) and can be used for nearline HDD replacement, surveillance, and high-speed rail systems.

Silicon Motion Technology Corporation ("Silicon Motion"), a global leader in designing and marketing NAND flash controllers for solid-state storage devices, today launched the SM2322, the industry's fastest single-chip high-performance, low-power, and cost-effective solution for external portable SSDs, supporting up to 8 TB of storage and achieves unparalleled data transfer rates of 20 Gbps for storing and accessing large amounts of content seamlessly from AI smartphones, high-performance multimedia devices, and game consoles.

With the increase of AI-capable devices, high density and high-performance storage solutions are becoming more critical to consumers. Portable SSDs powered by the new SM2322 controller are the only solution that offers low-cost, high-density and high-performance, making it the ideal solution for these applications. Equipped with a USB 3.2 Gen 2x2 interface with 20 Gb/s bandwidth and fully integrated hardware and software solution delivering peak sequential read and write transfer speeds of 2,100 MB/s and 2,000 MB/s, respectively, with up to 8 TB capacity, SM2322 powered high-performance portable SSDs enable an ultra-compact and lightweight form factor. The SM2322 supports the ProRes format and MFi specification for iPhone users while also being compatible with Windows, Android OS, and macOS, making it an ideal high-density, high-performance portable storage solution for AI smartphones, HD content creators, and gaming enthusiasts who require high-density, high-performance portable storage.

BIWIN is a rather large OEM of consumer NAND flash and DRAM products for some of the largest PC brands, including HP and Acer, among several others. It is based out of Shenzhen, China, and trades as 688525 on the Shanghai Stock Exchange. The company has been making retail overclocking PC memory; high performance M.2 NVMe and SATA SSDs; as well as portable SSDs and USB flash drives for several years now. We've reviewed several of these including. BIWIN now wants to break cover, and sell these products under its own brand in the retail channel. BIWIN is planning to make a big splash at the 2024 Computex next month, where it will showcase not just the products it's making for the big PC brands, but also those it plans to directly market under its own marquee.

From what we gather, BIWIN will continue to be an OEM for the big ticket brands it's serving, but will also run a first-party product stack. This would give its product managers freedom to come up with original product designs and specifications for their products, and choose where and how to sell them. The company in its LinkedIn post announcing this move, also posted teasers from its upcoming Computex booth, showcasing BIWIN-branded PC overclocking memory, portable SSDs, USB flash drives, memory cards, and M.2 NVMe SSDs. We'll be sure to give you a detailed tour of this booth from Computex.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND), solidifying its leadership in the NAND flash market.

"We are excited to deliver the industry's first 9th-gen V-NAND, which will bring future applications leaps forward. In order to address the evolving needs for NAND flash solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product," said SungHoi Hur, Head of Flash Product & Technology at Samsung Electronics. "Through our latest V-NAND, Samsung will continue to set the trend for the high-performance, high-density solid state drive (SSD) market that meets the needs for the coming AI generation."

Sabrent today debuted the Rocket 4 line of DRAMless M.2 NVMe Gen 4 SSDs. Built in the M.2-2280 form-factor, these drives take advantage of the PCI-Express 4.0 x4 host interface, and provide sequential transfer speeds of up to 7.4 GB/s reads, with up to 6.4 GB/s writes. The drives also offer 4K random access performance of up to 1 million IOPS reads, and 0.95 million IOPS writes. For now, Sabrent is launching 1 TB and 2 TB capacity variants of the Rocket 4, but the company is preparing to launch a larger 4 TB variant soon.

The Sabrent Rocket 4 combines a Phison E27T series DRAMless controller with Kioxia 162-layer 3D TLC NAND flash memory (also known as the BiCS 6). There's just a copper foil heat spreader to keep things cool. The 12 nm E27T doesn't run anywhere near as hot as the E18, so you can make do with the heatsink your motherboard includes, or run it the way it is. The 1 TB variant is priced at $99.99, and the 2 TB variant at $199.99. The company didn't reveal pricing of the unreleased 4 TB variant.

Silicon Motion Technology Corporation ("Silicon Motion"), a global leader in designing and marketing NAND flash controllers for solid-state storage devices, today introduced the new generation FerriSSD NVMe PCIe Gen 4 x4 BGA SSD. This latest solution features support for i-temp and integrates advanced IntelligentSeries technology, delivering robust data integrity in extreme temperature environments that meet the rigorous demands of industrial embedded systems and automotive applications.

The latest FerriSSD BGA SSD supports PCIe Gen 4 x4 and uses high density 3D NAND within a compact 16 mm x 20 mm BGA chip-scale package. With storage capacities up to 1 TB, these high-performance embedded SSDs utilize Silicon Motion's latest innovations to achieve high sequential read speeds exceeding 6 GB/s and sequential write speeds exceeding 4 GB/s. Equipped with Silicon Motion's proprietary IntelligentSeries data protection technology that enhances reliability and performance through the use of encryption, data caching, data scanning and protect features, as well as supporting the i-temp requirements of operating in extreme temperatures from -40°C to + 85°C. This latest FerriSSD offers a high performance and highly reliable embedded storage solution for a broad range of applications and operating environments including in-car computing, thin client computing, point-of-sale terminals, multifunction printers, telecommunications equipment, factory automation tools, and a wide range of server applications.

SK hynix press release about its upcoming PCB01 PCIe 5.0 SSD was a bit light on details and Anandtech got a closer look at the upcoming drive at GTC 2024. Not entirely unsurprising, the drive will be called the Platinum P51 rather than the PCB01, which is a continuation of the branding SK hynix is using for its current range of SSDs. As we already know, it'll feature a custom SK hynix controller and no further data was revealed to Anandtech, but the publication did manage to get some more details with regards to the NAND flash used.

The Platinum P51 is SK hynix first consumer SSD with its new-ish 238-layer 4D NAND flash based on the company's PUC (peri. under cell) technology, which places the peripheral circuits under the cell array. The official performance figures of the Platinum P51 appears to be somewhat lower than the press release from earlier today stated, with sequential read speeds of up to 13.5 GB/s and sequential write speeds of 11.5 GB/s. SK hynix will apparently release the drive in the typical SSD sizes of 500 GB, 1 TB and 2 TB. It'll be interesting how SK hynix in-house controller will compare to the second generation of Phison E26 based drives paired with Micron B58R NAND flash once it becomes available later this year.