International Data Corporation (IDC) recently published new forecasts for the worldwide hard disk drive (HDD) and solid state drive (SSD) markets. While both markets were affected the COVID-19 pandemic, the outlook looks good as demand for storage remains strong in multiple areas. Worldwide HDD industry petabyte shipments are expected to see a compound annual growth rate (CAGR) of 18.5% over the 2020-2025 forecast period and average capacity per drive is forecast to increase at a five-year CAGR of 25.5%.

"While the client HDD market continues a long-term secular decline due to rising SSD attach rates, the COVID-19 pandemic has over the near term increased the demand for certain types of HDDs, particularly mobile HDDs as well as capacity-optimized HDDs," said Edward Burns, research director, Hard Disk Drive and Storage Technologies at IDC. "And the demand for storage capacity continues to grow at a steady pace as the world creates and stores more and more data."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing its latest smartphone memory solution, the LPDDR5 UFS-based multichip package (uMCP). Samsung's uMCP integrates the fastest LPDDR5 DRAM with the latest UFS 3.1 NAND flash, delivering flagship-level performance to a much broader range of smartphone users.

"Samsung's new LPDDR5 uMCP is built upon our rich legacy of memory advancements and packaging know-how, enabling consumers to enjoy uninterrupted streaming, gaming and mixed reality experiences even in lower-tier devices," said Young-soo Sohn, vice president of the Memory Product Planning Team at Samsung Electronics. "As 5G-compatible devices become more mainstream, we anticipate that our latest multichip package innovation will accelerate the market transition to 5G and beyond, and help to bring the metaverse into our everyday lives a lot faster."

Western Digital has apparently delayed the introduction of Penta Layer Cell (PLC) NAND-based flash to 2025. The company had already disclosed development on the technology back in 2019, around the same time that Toshiba announced it (Toshiba which is now Kioxia, and a Western Digital partner in the development of the technology). The information was disclosed at Bank of America Merrill Lynch 2021 Global Technology Conference, where Western Digital's technology and strategy chief Siva Sivaram said that "I expect that transition [from QLC to PLC] will be slower. So maybe in the second half of this decade we are going to see some segments starting to get 5 bits per cell."

PLC is another density-increase step for NAND flash, whereby each NAND cell can have five bits written into it, thus increasing the amount of information available in the same NAND footprint. To achieve these 5 bits, each cell must store one of 32 voltage states, which in turn inform the flash controller of which corresponding data bits are stored herein. Siva Sivaram said that he expect the technology to take some more time to mature than most, due to the need for controller development that can take advantage of the increased density while making up for the shortcoming in this increased bit-per-cell approach (lower endurance and lower performance). PLC won't bring us HDD-tier storage density by itself (it only enables storage of 25% more data per cell); however, when paired with increasing layers of NAND flash, those 25% extra quickly add up.

As a leading manufacturer of embedded memory products, Transcend provides high-value storage products for industrial applications. The firm recently released DRAM-less 96-layer 3D NAND SSDs in 2.5" and M.2 form factors with NVMe PCIe and SATA III interfaces, catering to increasing demand for smart edge applications. Capable of operating under harsh conditions, this economical storage solution helps companies upgrade their hardware and remain highly competitive even without DRAM, allowing them to quickly deploy edge storage devices in the AIoT era.

Recognizing that industrial applications create a variety of needs, Transcend has released a complete product lineup, including MTE632T, an NVMe PCIe Gen 3x4 SSD, SATA III M.2 2280 SSD MTS932T, SATA III M.2 2242 SSD MTS532T, and 2.5" SSD SSD432K. Capacity options of up to 1 TB can be customized for enterprises seeking to choose the most suitable storage device. All DRAM-less SSDs are built with 96-layer 3D NAND flash that withstands 3K Program/Erase cycles for intensive read-write demands.

Phison Electronics Corp, a global leader in NAND flash controller integrated circuits and storage solutions, today announces shipping of its PS5018-E18 PCIe Gen4 controllers to manufacturer partners with new 176-layer replacement gate NAND.

The new E18 paired with 176-layer fills the crucial role in the Phison product stack as the highest performing E18 to date. The potent combination delivers up to 7,400 MB/s sequential reads and 7,000 MB/s sequential writes.

The largest gains arrive in random read latency where the new premium tier shows a 35% performance increase over previous models at low queue depth improving user experience in system responsiveness. The new E18 delivers the best game load times of any consumer SSD in its class.TPU had the chance to test this drive and we posted our review here.

SK Hynix is now a step closer to fulfilling its acquisition plans of Intel's NAND and SSD Business. The deal, for $9 billion, has now been cleared by the European Comission. This is in addition to previous approvals garnered from the U.S. Federal Trade Commission last year, and approval from the Committee on Foreign Investment in the United States (CFIUS) this March. Intel and SK Hynix expect all the further required approvals to be obtained throughout 2021.

Per the agreement terms, SK hynix will acquire from Intel the remaining assets, including IP related to the manufacture and design of NAND flash wafers, R&D employees, and the Dalian fab workforce, upon a final closing. SK hynix expects that the transaction would enable SK hynix to grow the memory ecosystem to the benefit of customers, partners, employees and shareholders. Access to Intel's IP and already specialized workforce and plant on memory manufacturing is sure to enable these goals.

Phison Electronics Corp., a global leader in NAND flash controllers and a complete line of storage solutions, and Cigent Technology, Inc., the leader in embedded cybersecurity technology, today unveiled design details behind the partnership that has delivered the industry's first and only line of self-defending storage devices with cybersecurity built into the firmware itself to protect against ransomware, data theft and malicious insider theft.

Phison's innovative and robust NAND flash solutions support a broad range of applications including embedded, consumer, enterprise and automotive. The Phison Crypto-SSD is a line of TCG enabled Self-Encrypting Drives that are designed to pass FIPS 140-3 Level 2 certification. Phison is committed to data security which helps to protect business and government users against loss or theft. Phison's collaboration with Cigent expands the E12DC Crypto-SSD security architecture to add additional compute capabilities, attack detectors and sensors directly on the drive. Together with Cigent, Phison has created a product that raises the bar of data security to a whole new level.

Memblaze today announced its first PCIe4.0 NVMe SSDs PBlaze6 6920 Series, which represent its 6th-generation enterprise SSD products. This Series is developed based on Memblaze's self-developed MUFP (Memblaze Unified Framework Platform), a unified framework platform for the development of all subsequent products of the firm.

The MUFP enables flexible decoupling among modules, improves the reusability and flexibility of firmware, and strengthens the cross-platform capability of firmware algorithm through software layering. The solutions based on Memblaze's MUFP are compatible with different controllers and NAND flash memory, thereby significantly improving the R&D efficiency of enterprise SSDs, shortening product development cycle and time to market, and meeting fast-changing market demands.

Samsung Electronics is expected to regain the distinction of the top semiconductor supplier for the 2nd quarter of 2021, re-taking the lead from Intel, according to a report by market research firm IC Insights. Samsung's growth rides on the back of a resurgent memory market, as the company supplies both DRAM and NAND flash of various types. This is also helped by the fact that Intel's sales in are expected to remain flat around the same period of time. This would be Samsung's return to the top spot for the first time since 2018, when memory prices crashed, sending down production, in a bid to better allow the channel to digest existing inventory.

Intel over the weekend announced that it will make new investments into its Rio Rancho manufacturing facility in the U.S. state of New Mexico. The company will hold a media event later today, describing the nature of the investment. Keyvan Esfarjani its VP and GM for manufacturing and operations will be joined by New Mexico Governor Michelle Lujan Grisham, along with a few Members of Congress from the state, in this event. Given the substantial participation of elected representatives, this is likely to be an expansion to the facility. Intel describes the Rio Rancho facility as focusing on mass production of the company's 3D XPoint memory, NAND flash, and silicon photonics products.

Update 16:13 UTC: Intel outlined its expansion plans with Rio Rancho, with a $3.5 billion investment, which could create at least 700 high-tech jobs and 1,000 construction jobs and support an additional 3,500 jobs in the state.The press release follows.

ATP Electronics, the global leader in specialized storage and memory solutions, has announced the launch of its tiniest NVMe flash storage offering: the N700 Series PCIe Gen3 x4 NVMe solid state drives (SSDs, which are available as M.2 Type 1620 heatsink ball-grid array (HSBGA) package. Complying with M.2 specifications, the M.2 Type 1620 HSBGA measures just 16 (L) x 20 (W) x 1.6 (H) mm, supporting high-speed PCIe 3.0 interface x4 lanes and NVMe protocol to deliver up to 32 Gb/s bandwidth at 8 Gb/s per lane. The soldered-down design makes them vibration-proof, while the 291-ball packaging takes up minimal space within tightly confined systems.

For customers who prefer a removable and field-replaceable design, ATP can accommodate the HSBGA onto an M.2 2230 module with the same firmware and NAND configuration. Both variants are suitable for thin and light systems in embedded, industrial and mobile applications. N700 Series SSDs are built with 3D triple-level cell (TLC) configured as pseudo single-level cell (pSLC) NAND flash. By storing only one bit per cell, they increase the reliability and endurance of the NAND flash memory, while benefiting from the lower cost compared with native SLC, due to the higher cell density.

In response to the growing need for data protection, ATP Electronics, the global leader in specialized storage and memory solutions, has launched the SecurStor microSD cards - the latest in its line of secure NAND flash storage products for the Internet of Things (IoT), education, automotive, defense, aerospace and other applications requiring confidentiality and reliability.

"Removable storage media such as microSD cards provide great convenience and versatility for storing and transporting data. However, such convenience also exposes them to risks of unauthorized access," said Chris Lien, ATP Embedded Memory Business Unit Head. "In many instances, the boot image may be compromised, corrupting the operating system or rendering the system unusable. Malware may be introduced, or private information may be disclosed and used for damaging intents. Amidst such dangerous scenarios, we have made security a key priority for all ATP products."

Intel today rolled out the SSD 670p series, a new line of M.2 NVMe SSDs that are targeted at the mainstream segment. Built in the M.2-2280 form-factor with PCI-Express 3.0 x4 host-interface, the drive implements Intel's latest 144-layer 3D QLC NAND flash memory, mated with a re-badged Silicon Motion SM2265G 8-channel controller that uses a fixed 256 MB DDR3L DRAM cache across all capacity variants. It comes in capacities of 512 GB, 1 TB, and 2 TB.

The 1 TB and 2 TB variants offer sequential read speeds of up to 3500 MB/s, while the 512 GB variant reads at up to 3000 MB/s. Sequential write speeds vary, with the 512 GB variant writing at up to 1600 MB/s, the 1 TB variant at up to 2500 MB/s, and the 2 TB variant at up to 2700 MB/s. The drives offer significantly higher endurance than past generations of QLC-based drives, with the 512 GB variant capable of up to 185 TBW, the 1 TB variant up to 370 TBW, and the 2 TB variant up to 740 TBW. Intel is backing the drives with 5-year warranties. The 512 GB variant is priced at $89, the 1 TB variant at $154, and the 2 TB variant at $329.

ADATA has recently been in a spot of controversy when it comes to their XPG SX8200 Pro solid-state drive (SSD). The company has reportedly shipped many different configurations of the SSD with different drive controller clock speeds and different NAND flash. According to the original report, ADATA has first shipped the SX8200 Pro SSD with Silicon Motion SM2262ENG SSD controller, running at 650 MHz with IMFT 64-layer TLC NAND Flash. However, it was later reported that the SSD was updated to use the Silicon Motion SM2262G SSD controller, clocked at 575 MHz. With this report, many users have gotten concerned and started to question the company's practices. However, ADATA later ensured everyone that performance is within the specifications and there is no need to worry.

Today, we have another report about the ADATA XPG SX8200 Pro SSD. According to a Redditor, ADATA has once again updated its SSD with a different kind of NAND Flash, however, this time the report indicated that performance was impacted. Tom's Hardware has made a table of changes showing as many as five revisions of the SSD, all with different configurations of SSD controllers and NAND Flash memory. We have contacted ADATA to clarify the issues that have emerged, and this is the official response that the company gave us.

With the debut of PCIe 4.0 standard, SSD manufacturers have started launching a new generation of storage devices, with unseen speeds before. Today's PCIe 4.0 SSDs can reach up to 8.0 GB/s reads and writes, all thanks to the bandwidth-heavy PCIe protocol. However, enterprise workloads are always requiring more and more bandwidth to satisfy their needs. Data is being moved in immense quantities and faster hardware is always welcome. The previous PCIe 4.0 standard is about to kneel to its successor - PCIe 5.0 protocol. Having double the amount of bandwidth, the new standard is set to bring unseen speeds.

The PCIe 5.0 protocol offers 32 GT/s per lane, making up to 64 GB/s in the full x16 implementation. However, when it comes to SSDs, as they use x4 lanes, it will increase the maximum speed to 16 GB/s, doubling the previous bandwidth. Silicon Motion, the maker of NAND flash controllers, has announced that the company is going to debut a PCIe 5.0 controller next year. "We are excited about enterprise-grade PCIe Gen5 controller, which we will have taped out early next year and sample in the second half of 2022", said Wallace Kuo, chief executive of Silicon Motion, during a conference call. Launching just in time to pair with Intel's Sapphire Rapids Xeon processors that support the PCIe 5.0 protocol, Silicon Motion is probably expecting to grab its market share there.

Newegg listings indicate Corsair is ready with the MP600 Core and MP600 PRO HydroX, which they state release later today. The MP600 Core is an M.2 NVMe SSD that's a cost-effective variant of the MP600 PRO. Built in the M.2-2280 form-factor, the drive takes advantage of PCI-Express 4.0 x4, but unlike the MP600 PRO, uses QLC NAND flash memory. The drive uses the Phison PS5016-E16 controller just like the original MP600, but swaps out its TLC NAND flash for QLC. On offer, are sequential transfer rates of up to 4950 MB/s reads, and up to 3700 MB/s writes, up to 380,000 IOPS 4K random reads, and up to 580,000 IOPS 4K random writes.

The MP600 PRO HydroX, on the other hand, is a premium variant of the MP600 PRO that comes with a factory-fitted water block that you connect to your DIY liquid cooling loop. It uses the same combination of the latest Phison PS5018-E18 controller with 3D TLC NAND flash, and offers the same on-paper performance, with up to 7000 MB/s sequential reads, up to 6550 MB/s sequential writes, up to 660,000 IOPS 4K random reads, and up to 800,000 IOPS 4K random writes. The MP600 Core and MP600 PRO HydroX are expected to launch alongside the original MP600 PRO, later this week. Both the MP600 Core and MP600 PRO HydroX are listed on the international stores of Newegg, with the 2 TB MP600 PRO HydroX going for $459, and the 2 TB MP600 Core going for £286 (incl. VAT).

Samsung is reportedly readying the 870 EVO line of SATA SSDs, with the drives succeeding the 860 EVO series. While there's no word on the type of NAND flash chips used with these drives, it's very likely that they feature a new generation 3D TLC (3 bits per cell) NAND flash memory, as QLC (4 bits per cell) has been marketed by Samsung under the 870 QVO series, which the company launched back in July 2020. The new-gen 3D TLC NAND could enable the 870 EVO drives to reach capacities as high as 4 TB, and offer slightly higher sequential transfer rates, with WinFuture.de reporting up to 560 MB/s sequential reads, and up to 530 MB/s writes, compared to 550/520 MB/s for the 860 EVO series. Being based on TLC (3 bpc) should also give these drives higher write endurance than the 870 QVO series.

SK hynix Inc. announced the completion of developing the industry's most multilayered 176-layer 512 Gigabit (Gb) Triple-Level Cell (TLC) 4D NAND flash. The Company provided the samples to controller companies last month to make a solution product.

SK hynix has been promoting 4D technology from the 96-layer NAND flash products that combine Charge Trap Flash (CTF) with high-integrated Peri. Under Cell (PUC) technology. The new 176-layer NAND flash is the third generation 4D product that secures the industry's best number of chips per wafer. This allows the bit productivity to be improved by 35% compared to the previous generation with the differentiated cost competitiveness. The read speed of cell increased by 20% over the previous generation adopting 2-division cell array selection technology. The data transfer speed also has been improved by 33% to 1.6 Gbps adopting speed-up technology without increasing the number of processes.

Greenliant has secured major design wins with its EnduroSLC solid state drives (SSDs) in a wide range of demanding, extreme environment applications for customers that need best-in-class reliability and product longevity. Greenliant's proprietary EnduroSLC Technology substantially enhances data retention and extends the write endurance of 1-bit-per-cell SSDs with advanced hardware ECC capabilities and NAND flash management algorithms. EnduroSLC SSDs not only offer superior data retention capabilities under complex temperature conditions, but also support 50K, 100K and industry-leading, ultra high 250K+ program-erase (P/E) cycles, which are at least a 5x improvement over pseudo-SLC (pSLC) SSDs and a 50x improvement over MLC NAND-based products.

For systems that are in remote locations and costly to maintain-from satellite to subsea communications-customers recognize the value of EnduroSLC SSDs; they can reliably operate and retain data for long periods of time in harsh conditions. Long-life, write-intensive products, such as transportation black box recorders and industrial data loggers, have also benefitted from the enhanced features of EnduroSLC SSDs. EnduroSLC storage products are designed with Greenliant's advanced SATA, NVMe PCIe and eMMC controllers, operate at industrial temperatures (-40 to +85 degrees Celsius) and are backed by the company's Long-Term Availability program (http://bit.ly/SSD-LTA-program), providing an extra level of support.

Silicon Motion Technology Corporation, a global leader in designing and marketing NAND flash controllers for solid-state storage devices, today announced the SM8266, a complete enterprise-grade 16-channel PCIe 4.0 NVMe hardware plus firmware turnkey SSD controller solution. Customers can rapidly develop and bring to market enterprise SSDs for data centers by using our complete development platform that includes a turnkey NVMe firmware stack and hardware reference design kit.

"Our solution is the only complete PCIe Gen4 turnkey solution available today from an established merchant controller supplier," said Nelson Duann, Silicon Motion's Senior Vice President of Marketing and R&D. "Since the introduction of our PCIe Gen3 turnkey solution, we have established a longer track record of supplying turnkey solutions in terms of customer adoption and sale volume than any other company. Our Shannon Systems team is already custom designing enterprise-grade NVMe, Open-Channel and Key-Value SSDs using SM8266 for hyperscale customers' data centers with production expected in 2021."

NEO Semiconductor was honored with a Flash Memory Summit 2020 Best of Show Award for Hardware Architecture at today's Flash Memory Summit 2020 Best of Show Awards ceremony. The Flash Memory Summit, the World's largest and most prestigious storage industry conference and exposition, recognizes NEO Semiconductor's X-NAND product solution.

"5G, robotics, virtual reality and AI applications demand the highest level of performance in order to meet the service level objectives of business-critical data center workloads," said Jay Kramer, Chairman of the Awards Program and President of Network Storage Advisors Inc. "We are proud to recognize NEO Semiconductor X-NAND product solution for providing an excellent high-performance solution that can uniquely lower the cost across all tiers of SSD technologies."

Micron today announced that it has begun volume shipments of the world's first 176-layer 3D NAND flash memory, achieving unprecedented, industry-pioneering density and performance. Together, Micron's new 176-layer technology and advanced architecture represent a radical breakthrough, enabling immense gains in application performance across a range of storage use cases spanning data center, intelligent edge and mobile devices.

"Micron's 176-layer NAND sets a new bar for the industry, with a layer count that is almost 40% higher than our nearest competitor's," said Scott DeBoer, executive vice president of technology and products at Micron. "Combined with Micron's CMOS-under-array architecture, this technology sustains Micron's industry cost leadership."

Building on a unique and diverse product portfolio across HDD and flash, Western Digital today announced a suite of new NVMe SSDs for enabling next-generation, data-centric architectures for data centers, industrial IoT, automotive and client applications. The new family includes the Ultrastar DC ZN540 ZNS NVMe SSD for designing a more efficient data center storage tier with competitive TCO; the Western Digital IX SN530 Industrial SSD for the extreme environments of industrial and automotive applications; and the 2 TB WD Blue SN550 NVMe SSD for speeding up PC performance. Leveraging Western Digital's unique vertical integration capabilities - from designing and manufacturing its NAND flash to developing its own in-house SSD controllers and firmware - the new products underscore the company's continued strength and commitment in driving storage innovation for new system architectures, applications and use cases for global customers across cloud, OEM, enterprise, channel and retail end-user markets.

The amount of data created over the next three years will be more than the data created over the past 30 years, according to IDC. Billions of connected systems will generate a myriad of contextualized data sets from smart video to consumer and sensor data, which must be captured, transformed and analyzed to bring value to industries, businesses and people. Legacy architectures cannot keep up with today's data-intensive environments. The challenge is how to efficiently and cost-effectively build the data infrastructure that will keep up with data demands of the zettabyte-scale era. Storage is critical and fundamental to creating these new architectures and extracting value from data.

The memory market is expected to remain in a state of oversupply during Q4 2020 for both DRAM and NAND flash according to a new report from TrendForce. This oversupply will mean ~10% lower prices for memory in Q4 2020 with further price drops in 2021, this will result in falling SSD prices of 10-15%. These price drops in the consumer market will likely result in the lowest SSD pricing seen to date. These reductions were mainly driven by Huawei losing access to foreign DRAM and NAND memory which wasn't fully taken up by other smartphone manufacturers leading to an access of supply. These lower SSD prices will help accelerate the decline of HDDs in consumer devices as price parity gets closer.

Plextor late last week unveiled the M8V Plus line of mainstream SATA SSDs in the 2.5-inch and M.2-2280 form-factors. The M8V Plus is an incremental update of the original M8V series from 2018. What's new is the implementation of KIOXIA-sourced 96-layer TLC NAND flash replacing 64-layer chips from Toshiba. The M8V Plus series comes in 256 GB, 512 GB, and 1 TB variants, while the original M8V came in 128-thru-512 GB variants.

The Silicon Motion SM2258 controller under the hood of the M8V Plus, has been updated to its latest revision, and supports Plextor-innovated Plex Compress technology. This feature uses the controller's idle time to compress files that haven't been accessed for over 30 days. The Plex Turbo feature, which is essentially variable-size SLC cache, has also been improved to be larger in size. On-paper performance hasn't changed, with the company claiming up to 560 MB/s sequential reads, up to 520 MB/s sequential writes, up to 90,000 IOPS 4K random access for the 256 GB and 512 GB variants; and up to 88,000 IOPS random access for the 1 TB variant. The company rates write endurance for the 256 GB variant at 140 TBW, 512 GB variant at 280 TBW, and 560 TBW for the 1 TB variant. All three variants are backed by 3-year warranties. The company didn't reveal pricing.