ADATA Technology, a leading manufacturer of highperformance DRAM modules and NAND Flash products,today launched the ICFS332 industrial CFast card,which combines the form factor of a CF card with a high speed SATA interface to deliver reliability and secure operation for a wide range of industrial equipment applications.

Utilizing fast SLC NAND Flash, the ICFS332 provides outstanding performance and reliability with sequential read/write speeds up to 560MB/400MB per second and an MTBF (mean time before failure) rating of 2 million hours. Thanks to an industrial-grade operational temperature range of -40°C to 90°C, the ICFS332 enables long term deployment in harsh environments that experience extreme cold and heat.

ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND Flash products, is pleased to confirm participation in SPS IPC Drives 2015, Europe's leading industrial PC and automation trade show from Nov. 24 to 26 in Nuremberg, Germany. ADATA is ready to display a wide selection of industrial products that help customers create smart manufacturing with a high degree of connectivity, automation, and control. Smart industry depends on reliable memory and storage to drive it forward, and ADATA is at the forefront of providing these.

To fulfill the latest market demand, ADATA implements large capacities and high performance specifications, with PCIe Gen 3x4 and up to 2TB density for big data process across industrial sectors. In addition, the support of PLP (Power-Loss Protection), advanced LDPC ECC and wide temperature tolerance ensure great reliability, stability, as well as data security. As for those applications requires ultra-fast computing and high power efficiency, ADATA's DDR4 DRAM modules can offer lower energy draw and faster performance compared to DDR3 while adding robust durability.

In this week's TechPowerUp News - WD's whopping $19 billion acquisition of NAND flash major SanDisk and what it could mean for both brands, MSI's insanely powerful all-in-one gaming desktop; and a fully-integrated NUC desktop by Intel following three generations of the revolutionary platform. Also, an exclusive sneak peek at SilverStone's Raven RVX01 mid-tower case!

Toshiba today launched a new line-up of NAND flash memory products for embedded applications that are compatible with the widely used Serial Peripheral Interface (SPI). Wide ranging applications for the new "Serial Interface NAND" include such consumer applications as flat-screen TVs, printers and wearable devices, and industrial applications, including robots. Users can choose from a wide line-up of 12 products that offers three densities, 1Gbit, 2Gbit and 4Gbit; two packages, WSON[1] and SOP[2] and two power supply voltages. Samples shipment starts today and mass production is scheduled to begin with the 1Gbit products from December. Mass production of the remaining line-up will follow.

Compatibility with the widely used SPI, which can be controlled with just six pins, allows the new "Serial Interface NAND" to be used as SLC NAND flash memory, with a low pin count, small package and large capacity.

Toshiba Corporation and SanDisk Corporation today announced the start of equipment installation in the New Fab 2 facility at Yokkaichi Operations. New Fab 2 is primarily intended to provide the clean room space necessary to transition a significant portion of the current Yokkaichi 2D NAND capacity to 3D flash memory. The companies also signed definitive agreements for joint manufacturing of 3D flash memory and investment in New Fab 2.

Seiichi Mori, Corporate Senior Vice President of Toshiba Corporation and President and CEO of Semiconductor & Storage Products Company, said, "The partnership of SanDisk and Toshiba has consistently pioneered advances in the memory industry through our technology leadership and commitment to innovation and excellence. We look forward to fabricating 3D flash memory, BiCS FLASH, in New Fab 2."

ZOTAC International, a global innovator and leading manufacturer of graphics cards, ZBOX Mini PCs, and Solid State Drives (SSDs), ramps up a new line of storage aimed at offering enduring speed in desktops, notebooks, and external storage as it becomes an essential to every PC.

Available in 240GB and 480GB capacities, the Premium Edition SSDs bring with it a suite of features. At the heart sits a quad-core Phison SSD controller and outstanding MLC NAND for marathon reliability with up to 480 TBW and up to 3,000 PE cycles. With robust performance delivering sequential read/write speeds of up to 520MBps and 500MBps, the Premium Edition SSDs are within a hair's width of the SATA III bandwidth saturation point.

Samsung Electronics today announced the introduction of the Samsung 950 PRO solid state drive (SSD), designed to meet the demands of high-performance consumer and business laptops and PCs. The drive's M.2 form factor means that users with ultra-slim notebook PCs and workstations can benefit from industry-leading storage endurance, reliability and energy efficiency.

The Samsung 950 PRO SSD is Samsung's first consumer-ready Non-Volatile Memory Express (NVMe) M.2 form factor SSD with vertical NAND (V-NAND) technology; supporting the Peripheral Component Interconnect Express (PCIe) 3.0 interface. With the introduction of NVMe, the first protocol optimized for SSDs, users of the Samsung 950 PRO will benefit from improved performance and power saving which can help increase battery life and potentially reduce operating costs. The drive is ideal for professionals who want cutting-edge performance, higher bandwidth and lower latency from their high-end PCs and workstations, for projects such as computer-aided design, data analysis and engineering simulation. The compact M.2 2280 form factor ensures compatibility with next-generation desktop and mobile platforms that support the M.2 PCIe slot and interface.

Toshiba's Digital Products Division (DPD), a division of Toshiba America Information Systems, Inc., announced today two new internal solid-state drive (SSD) storage devices with up to 960 GB of capacity. The new SSDs include the Toshiba Q300 Pro Series Internal SSD Hard Drive, built for gaming and creative applications with high-end demand for performance and reliability and the Toshiba Q300 Series Internal SSD, offering a balance of high performance and value, ideal for PC upgrades from traditional hard drives. With Adaptive Size SLC Write cache technology to enable SLC-like performance, both models offer high processing speed and low power consumption and are compatible with Windows, Mac and Linux.

"Toshiba's announcement of the new Q300 Pro and Q300 internal SSDs demonstrates that Toshiba is continuously striving to bring the best storage solutions to the market," said Maciek Brzeski, Vice President of Branded Storage Products, Toshiba America Information Systems, Inc., Digital Products Division. "Today's announcement addresses increasing consumer demand for speed, performance, quality and reliability to improve their computing experience. As the inventor of flash memory, our new Q300 and Q300 Pro Internal SSD Series delivers leading-class performance and reliability to meet a wide variety of computing needs."

Intel plans to launch the first consumer SSD based on its new 3D Xpoint memory technology, a successor to NAND flash which promises exponential gains in performance and capacity, some time in 2016. The Intel-branded drive will be called Intel Optane, will come in modern form-factors such as M.2/NGFF, SATA-Express, PCI-Express (add-on card), and will take advantage of the new NVMe protocol.

Early prototypes of Optane demoed at IDF already offer up to 5.5 times the throughput of NAND flash-based DC P3700 series SSDs, and we're only talking about single-queue performance. Compared to the queue depth of just 32 commands for AHCI, NVMe offers command queue depth of a staggering 65,535 commands. Since Micron Technology is the co-developer of 3D Xpoint, it's likely that we'll also see Micron/Crucial branded drives based on this tech.

At the 2015 Flash Memory Summit, Samsung announced the fruition of its swanky new 48-layer 3D V-NAND chips, the PM1633a. Built in the 2.5-inch form-factor, and featuring a SAS 12 Gb/s interface, this drive offers an unformatted capacity nearing 16 TB (15,360 GB to be precise). The drive relies on ten 48-layer stacks of 256 Gb 3-bit NAND flash dies, making up 15,360 GB of unformatted capacity. Samsung showed off a system with 48 of these drives, making up 720 TB of total storage.

Besides the largest SSD, Samsung also showed off the fastest. The PM1725 SSD, designed for servers with high-traffic databases, where throughput is the king, is built in the 2.5-inch form factor (up to 3.2 TB) and HHHL form-factor (up to 6.4 TB). It features a PCI-Express 3.0 host bus, and talks to the OS over the modern NVMe protocol. The two offer random access throughput of up to 1,000,000 IOPS.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced that it has begun mass producing the industry's first 256-gigabit (Gb), three-dimensional (3D) Vertical NAND (V-NAND) flash memory based on 48 layers of 3-bit multi-level-cell (MLC) arrays for use in solid state drives (SSDs).

"With the introduction of our 3rd generation V-NAND flash memory to the global market, we can now provide the best advanced memory solutions, with even higher efficiency based on improved performance, power utilization and manufacturing productivity, thereby accelerating growth of the high-performance and the high-density SSD markets," said Young-Hyun Jun, President of the Memory Business at Samsung Electronics. "By making full use of Samsung V-NAND's excellent features, we will expand our premium-level business in the enterprise and data center market segments, as well as in the consumer market, while continuing to strengthen our strategic SSD focus."

Toshiba Corporation today announced the development of the world's first 16-die (max.) stacked NAND flash memory utilizing Through Silicon Via (TSV) technology. The prototype will be shown at Flash Memory Summit 2015, to be held from August 11 to 13 in Santa Clara, USA.

The prior art of stacked NAND flash memories are connected together with wire bonding in a package. TSV technology instead utilizes the vertical electrodes and vias to pass through the silicon dies for the connection. This enables high speed data input and output, and reduces power consumption.

Toshiba Corporation today unveiled the new generation of BiCS FLASH, a three-dimensional (3D) stacked cell structure flash memory. The new device is the world's first 256-gigabit (32gigabytes) 48-layer BiCS device and also deploys industry-leading 3-bit-per-cell (triple-level cell, TLC) technology. Sample shipments will start in September.

BiCS FLASH is based on a leading-edge 48-layer stacking process that surpasses the capacity of mainstream two dimensional NAND Flash memory while enhancing write/erase reliability endurance and boosting write speeds. The new 256 Gb device is suited for diverse applications, including consumer SSD, smartphones, tablets and memory cards, and enterprise SSD for data centers.

Intel Corporation and Micron Technology, Inc. today unveiled 3D XPoint technology, a non-volatile memory that has the potential to revolutionize any device, application or service that benefits from fast access to large sets of data. Now in production, 3D XPoint technology is a major breakthrough in memory process technology and the first new memory category since the introduction of NAND flash in 1989.

The explosion of connected devices and digital services is generating massive amounts of new data. To make this data useful, it must be stored and analyzed very quickly, creating challenges for service providers and system builders who must balance cost, power and performance trade-offs when they design memory and storage solutions. 3D XPoint technology combines the performance, density, power, non-volatility and cost advantages of all available memory technologies on the market today. The technology is up to 1,000 times faster and has up to 1,000 times greater endurance3 than NAND, and is 10 times denser than conventional memory.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today introduced its latest lineup of high performance SATA solid state drives (SSDs) for small and medium sized businesses (SMBs) -- the Samsung PM863 and SM863. These next-generation drives deliver faster speeds and improved reliability in much higher capacities, as well as greater power efficiency, in order to support the heavy demands placed on the data center.

"Companies around the world are racing to digitize their business processes, which is putting increased strain on the data center and extreme pressure on IT managers to find a solution quickly," said Un-soo Kim, Senior Vice President of Branded Product Marketing, Memory Business, at Samsung Electronics. "The PM863 and SM863 solid state drives are the ideal solution, offering much higher density in the 2.5" form factor, which saves IT managers at small and medium sized businesses precious real estate in the data center without sacrificing power or performance thanks to our breakthrough V-NAND technology."

Plextor is expected to launch its value SATA SSD line, the M6V, on 17th July, 2015. The drive combines a Silicon Motion SMI-2246 controller, with Toshiba A19 TLC NAND flash chips. The drive comes in capacities of 128 GB, 256 GB, and 512 GB, with DRAM cache sizes of 128 MB, 256 MB, and 512 MB, respectively. All three variants offer sequential read speeds of up to 535 MB/s, while their sequential write speeds are rated up to 170 MB/s, 335 MB/s, and 455 MB/s, respectively. Common features include NCQ, TRIM, and native 256-bit AES encryption. There's a likelihood of Plextor introducing a few new features, such as PlexVault, a software that encrypts and stores your data in hidden partitions, and PlexCompressor, which compresses the least accessed data on your drive.

SanDisk Corporation, a global leader in flash storage solutions, today introduced the iNAND 7232 storage solution, a new, advanced embedded flash drive (EFD) optimized to deliver best-in-class imaging performance and superior storage capacity in flagship mobile devices. Available in capacities up to 128 GB, the iNAND 7232 storage solution enables original equipment manufacturers (OEMs) to introduce smartphones, tablets and other connected devices that feature ample storage to meet the needs of increasing consumer content while providing data-rich application experiences and next-generation digital photography capabilities.

"From North America to China, consumers are demanding higher and higher capacity storage," said Christopher Bergey, SanDisk's vice president and general manager of Mobile and Tablet Solutions. "Our iNAND 7232 storage solution not only enables mobile OEMs to cost-effectively deliver the robust storage mobile users want, it is also our most advanced embedded storage solution to date. It leverages new, innovative application-level storage architecture and SanDisk's latest 15 nanometer flash storage technology to enable outstanding application experiences, terrific 4K Ultra HD video capture and digital photography experiences never before possible in flagship smartphones."

OCZ announced the Trion 100, a new lineup of cost-effective SSD for first-time users graduating from HDDs, and for those who want fast read-intensive drives to replace storage HDDs in their systems. Some extremely low price-per-gigabyte figures build their case. The drive features 19 nm TLC NAND flash chips made by Toshiba, driven by a controller also made by Toshiba. This controller features an SLC-caching tech that deals with a small portion of the TLC NAND flash as SLC (by storing just one bit per cell), which has the maximum sequential transfer performance. The controller juggles hot-data in and out of this portion from the rest of the TLC area. Other controller features include DEVSLEEP mode support. In this mode, the drive draws just 6 mW of power. Other essentials such as TRIM and NCQ are also featured.

OCZ Trion 100 comes in four capacities - 120 GB, 240 GB, 480 GB, and 960 GB, priced at US $56.99, $87.99, $184.99, and $369.99, respectively. All four variants offer sequential read speeds of up to 550 MB/s, while the maximum sequential-write speeds are rated at 450 MB/s, 520 MB/s, 530 MB/s, and 530 MB/s, respectively. The maximum 4K random-read performance for the 120 GB variant is rated at 79,000 IOPS; while the other three offer up to 90,000 IOPS. Random-write performance figures for the four variants are 25,000 IOPS, 43,000 IOPS, 54,000 IOPS, and 64,000 IOPS, respectively. The drives are built in the 7 mm-thick 2.5-inch form-factor, with SATA 6 Gb/s interface. The drives ship with OCZ's SSDGuru software that lets you monitor the drive's health, update its firmware, and wipe it. OCZ is offering a 3-year warranty with these drives.Read our review of the OCZ Trion 100 480GB.

SK Hynix Inc. announced it has developed UFS (Universal Flash Storage) 2.0 64 GB (Gigabytes) solution based on its own 16 nm NAND Flash and in-house firmware and controller. This UFS 2.0 represents a groundbreaking leap in performance by enabling High-Speed Gear 3 interface with dual data lanes.

UFS 2.0 is the next generation of embedded flash memory to eMMC for mobile IT gadgets which drives a remarkable boost in reading/writing speed at low power and supports high density. The Company's UFS 2.0 operates at 780 MB/s(Megabytes per second) and 160 MB/s of sequential read/write speed and runs random read/write speed at 32,000 IOPS and 17,000 IOPS. As a result, it works three times faster in read speed than eMMC 5.1.

In addition, this UFS 2.0 utilizes 'Command Queue' technology used in SSD solutions to handle read and write commands simultaneously to achieve data operation efficiency by preventing buffering load in multi-tasking and ordering priorities of data works. To maximize prioritized command processing feature of UFS standard, the device employs 'Multi-Thread' read processing internally to ensure that high priority command is serviced first irrespective of other outstanding tasks, delivering fast response to time-critical host requests for best user experience. In consequence, it realizes even better performance in speed and power consumption over eMMC.

Samsung Electronics Co., Ltd., a market leader in advanced memory technology and an innovator in consumer electronics, today introduced the 2-terabyte (TB) 850 PRO and 850 EVO solid state drives (SSDs). Samsung's 3D Vertical NAND (V-NAND) based retail SSD lineup now features 20 different products with a wide range of capacity options from 120 gigabyte (GB) to 2TB. Available in 50 countries, the launch of the 2TB drives addresses the ever-increasing consumer demand for high-performance and high-capacity memory solutions.

"Samsung experienced a surge in demand for 500 gigabyte (GB) and higher capacity SSDs with the introduction of our V-NAND SSDs. The release of the 2TB SSD is a strong driver into the era of multi-terabyte SSD solutions," said Un-Soo Kim, Senior Vice President of Branded Product Marketing, Memory Business at Samsung Electronics. "We will continue to expand our ultra-high performance and large density SSD product portfolio and provide a new computing experience to users around the globe."

SMART High Reliability Solutions ("SMART HRS"), a provider of current and next-generation solid-state storage solutions specializing in ruggedized, high-performance and high-capacity solid-state drives ("SSDs") for defense, aerospace and industrial markets, today announced its HRS-S3 2.5" SATA 6Gb/s SSD, which has been successfully sampling with key customers, is now available in volume quantities to qualified customers. As the latest in a robust line of products from SMART HRS that emphasizes the company's exclusive focus on solid-state storage solutions, the HRS-S3 is ideal for industrial temperature applications.

Building on the accomplishments of SMART HRS's long line of SSD products for the defense industry, the HRS-S3 SSD delivers performance metrics of 500MB/s sequential read and 400MB/s sequential write speeds while delivering 35K IOPS and 20K IOPS respectively during random operation. Using highly reliable single-level-cell (SLC) NAND Flash, the HRS-S3 is available in capacities ranging from 120 to 960GB.

Team Group unveiled its cost-effective L3 EVO line of SATA SSDs. Making use of TLC NAND flash chips, these drives come in capacities of 240 GB, 480 GB, and 960 GB (pictured below). The 240 GB and 480 GB variants offer sequential speeds of up to 560 MB/s, with up to 540 MB/s writes; with up to 85,000 IOPS reads and up to 90,000 IOPS writes, in 4K random access performance. The company didn't put out performance figures of the 960 GB variant. The drives feature SATA 6 Gb/s interface, are 7 mm-thick, and support all modern SATA SSD features, including TRIM, NCQ, native AES acceleration, and SMART.

SanDisk Corporation, a global leader in flash storage solutions, at Computex Taipei 2015 today announced its new CloudSpeed Eco Gen. II SATA SSD, a purpose-built storage device for cloud service providers with up to 2TB capacity. This new SSD is now sampling with select hyperscale customers. Based on 15 nm NAND flash, the new CloudSpeed Eco Gen. II SSD delivers greater storage density with 3x the streaming bandwidth vs. hard disk drives (HDDs). Designed as a drop-in replacement for HDDs, CloudSpeed Eco Gen. II provides datacenters with a lower cost-per-square-foot for hyperscale applications such as analytics, media streaming and content repositories.

Cloud Data Services, such as Big Data Analytics, SaaS, IaaS and PaaS environments, are driving radical data center transformation. The number of connected 'things' is set to explode, with Gartner forecasting this number will reach 25 billion by 2020, generating a deluge of data that will need to be analyzed in real-time. Micropayments, online commerce and similar applications are read-intensive and require high data throughput and scalable storage capacity.

ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash products, will unveil its extreme performance XPG line: new SSDs (Solid State Drives) and DDR4 memory module solutions, the new Apple series of products, Type-C mobile accessories and ruggedized products. Come witness history at ADATA's "Aspire, Empower, Transform" theme on show June 2-6 at COMPUTEX TAIPEI 2015, Taipei World Trade Center, in Nangang Exhibition Hall 1F Booth #J0806.

ADATA will flaunt its extreme performance XPG line of products, including the winner of the Taiwan Excellence Gold Award, the XPG Z1 DDR4 Gaming DRAM. Never satisfied with staying in one place, ADATA's newest XPG Z2 is now set to break another world record at 4034 MHz in the DDR4 gaming memory class. ADATA will also show the latest SX930 gaming SSDs featuring SLC cache technology and premier MLC flash that boost overall speed and stability. To give visitors an extremely fast and playful gaming experience, ADATA will hold a Special Force 2 Challenge game in its XPG display zone and will give away SSD and DRAM prizes every day.

Intel quietly announced availability of its DC S3510 SSDs for data centers. Built in the 2.5-inch form-factor, with SATA 6 Gb/s interface, these drives feature SET (standard-endurance technology) MLC NAND flash built by IMFlash Technology, on a 16 nanometer node, which can take in up to 880 TBW. Its controller offers native 256-bit AES encryption. The drive is available in capacities of 80 GB, 120 GB, 240 GB, 480 GB, 800 GB, 1.2 TB, and 1.6 TB. The table below shows sequential and 4K random access performance figures by the company for each model. The drives are backed by 5-year warranties, and are available in the OEM channel. Its target consumers are low-cost dedicated hosting providers.