Tech innovator GELID Solutions, is thrilled to unveil its latest Phase Change Thermal Interface. Developed with cutting-edge technology and designed to meet the demands of today's high-performance devices. HeatPhase Ultra is built to last, offering great durability. Unlike regular materials, it stays effective without getting
hard or worn out over time, ensuring steady temperature control. Safety is a priority, and HeatPhase Ultra is designed to prevent electrical issues, reducing the risk of short circuits, especially in delicate applications.

Designed with user convenience in mind, HeatPhase Ultra prevents bleeding during application, staying in place without creating a mess. Its user-friendly nature simplifies both application and removal processes, making it the preferred choice for technicians and users alike. Responding to demand, HeatPhase Ultra comes in two sizes: one for Intel and one for AMD processors. This tailored approach guarantees a good fit for different systems, providing effective thermal control for various electronic devices.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced its participation at Flash Memory Summit 2023, taking place in person in Santa Clara, California, on August 8-10. CEO, Andy Hsu, will deliver a keynote address titled "New Architectures which will Drive Future 3D NAND and 3D DRAM Solutions" on August 9th at 11:40 a.m. Pacific Time.

Earlier this year, Neo Semiconductor announced the launch of its ground-breaking technology, 3D X-DRAM. This development is the world's first 3D NAND-like DRAM cell array that is targeted to solve DRAM's capacity bottleneck and replace the entire 2D DRAM market. 3D X-DRAM can be manufactured using the existing 3D NAND flash memory process with minor changes, significantly reducing the time and cost spent developing a new 3D process. During the keynote, Mr. Hsu will reveal the 3D X-DRAM process flow and technical details.

Researchers at IBM Zurich and Germany University of RTWH Aachen have developed a new non-volatile phase change memory with monoatomic glassy antimony, which unlike conventional phase-change-materials uses just a single element: antimony (Sb). Traditional phase-change memories use a mix of different materials, which makes things complicated when you try to shrink them down for higher storage densities, as impurities and composition differences negatively affect yields.

The novel approach is based on pure antimony films that are between 3 and 10 nanometers thick, confined between Silicon layers of 40-200 nm thickness. For their prototypes the engineers achieved a switching rate of 50 nanoseconds (20 MHz). While this doesn't sound very fast, the researchers are optimistic that this can be optimized further, their next goal is 10 nanoseconds, which is getting in the region of DRAM speeds.

Remember that Kickstarted case from Calyos, which promises to be the ending of spinning fans on your rig? Calyos is showcasing it at this year's Computex.

The production chassis is designed by France's modding duo WaterMod, which improved upon the original open-frame concept design both in terms of performance and aesthetics. The usage of Phase Change cooling through two cooling blocks - one for the GPU, another for the CPU) makes away with fans, pumps, water, and any other assorted cooling techniques that involve calling upon the decibel gods.