NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced its participation at Flash Memory Summit 2023, taking place in person in Santa Clara, California, on August 8-10. CEO, Andy Hsu, will deliver a keynote address titled "New Architectures which will Drive Future 3D NAND and 3D DRAM Solutions" on August 9th at 11:40 a.m. Pacific Time.

Earlier this year, Neo Semiconductor announced the launch of its ground-breaking technology, 3D X-DRAM. This development is the world's first 3D NAND-like DRAM cell array that is targeted to solve DRAM's capacity bottleneck and replace the entire 2D DRAM market. 3D X-DRAM can be manufactured using the existing 3D NAND flash memory process with minor changes, significantly reducing the time and cost spent developing a new 3D process. During the keynote, Mr. Hsu will reveal the 3D X-DRAM process flow and technical details.

Researchers at IBM Zurich and Germany University of RTWH Aachen have developed a new non-volatile phase change memory with monoatomic glassy antimony, which unlike conventional phase-change-materials uses just a single element: antimony (Sb). Traditional phase-change memories use a mix of different materials, which makes things complicated when you try to shrink them down for higher storage densities, as impurities and composition differences negatively affect yields.

The novel approach is based on pure antimony films that are between 3 and 10 nanometers thick, confined between Silicon layers of 40-200 nm thickness. For their prototypes the engineers achieved a switching rate of 50 nanoseconds (20 MHz). While this doesn't sound very fast, the researchers are optimistic that this can be optimized further, their next goal is 10 nanoseconds, which is getting in the region of DRAM speeds.

Enterprise storage leader HGST, a Western Digital company, today is previewing a new architecture for solid-state drives (SSDs) that enables applications to provide faster insights to the data-intensive questions of tomorrow. The demonstration shows unprecedented SSD performance levels that are achieved by utilizing a combination of HGST's new, latency-optimized interface protocols with next-generation non-volatile memory components.

The SSD demonstration utilizes a PCIe interface and delivers three million random read IOs per second of 512 bytes each when operating in a queued environment and a random read access latency of 1.5 microseconds (us) in non-queued settings, delivering results that cannot be achieved with existing SSD architectures and NAND Flash memories. This performance is orders of magnitude faster than existing Flash based SSDs, resulting in a new class of block storage devices.

Micron Technology, Inc., one of the world's leading providers of advanced semiconductor solutions, today announced the addition of a new product to its Phase Change Memory (PCM) portfolio. With high-volume shipments of its 45-nanometer (nm), 1-gigabit (Gb) PCM-based multichip package (MCP) solution for mobile devices well underway, the company is now sampling a 512-megabit (Mb) PCM plus 512Mb LPDDR2 MCP that offers greater flexibility in terms of application requirements. The company also announced that it has been shipping 1Gb PCM to one of the world's leading mobile device manufacturers, Nokia, for use in their recently announced phones.

As the first company in the world to ship PCM solutions in volume, Micron is building on its close cooperation with chipset vendors, enablers and handset manufacturers to meet growing market demand for PCM. Nokia is using Micron's PCM solution to enrich the functionality of select devices in its portfolio.

Micron Technology, Inc. (Nasdaq:MU), one of the world's leading providers of advanced semiconductor solutions, today announced an industry first with high-volume availability of its 45-nanometer (nm) Phase Change Memory (PCM) for mobile devices, featuring 1-gigabit (Gb) PCM plus 512-megabit (Mb) LPDDR2 in a multichip package. As the first company in the world currently offering PCM solutions in volume production, Micron is providing chipset vendors, enablers, and handset manufacturers with a proven product that meets the expanding needs of today's wireless market and paves the way for enhanced features and capabilities.

PCM provides enhanced boot time, simplifies software development and boosts performance with overwrite capability. It also provides very low power consumption and extremely high reliability. In addition, the design-optimizing shared interface between LPDDR2 and PCM is fully compliant with JEDEC industry standards.

For the first time, scientists at IBM Research have demonstrated that a relatively new memory technology, known as phase-change memory (PCM), can reliably store multiple data bits per cell over extended periods of time. This significant improvement advances the development of low-cost, faster and more durable memory applications for consumer devices, including mobile phones and cloud storage, as well as high-performance applications, such as enterprise data storage.

With a combination of speed, endurance, non-volatility and density, PCM can enable a paradigm shift for enterprise IT and storage systems within the next five years. Scientists have long been searching for a universal, non-volatile memory technology with far superior performance than flash - today's most ubiquitous non-volatile memory technology. The benefits of such a memory technology would allow computers and servers to boot instantaneously and significantly enhance the overall performance of IT systems. A promising contender is PCM that can write and retrieve data 100 times faster than flash, enable high storage capacities and not lose data when the power is turned off. Unlike flash, PCM is also very durable and can endure at least 10 million write cycles, compared to current enterprise-class flash at 30,000 cycles or consumer-class flash at 3,000 cycles. While 3,000 cycles will out live many consumer devices, 30,000 cycles are orders of magnitude too low to be suitable for enterprise applications (see chart for comparisons).

Numonyx B.V. introduced a set of innovative products today based on the new class of memory technology called phase change memory (PCM). The new devices deliver higher performance, endurance and simplicity for wired and wireless communications, consumer electronics, PCs, and other embedded applications.

The new embedded memory products blend many attributes associated with flash memory, as well as RAM and EEPROM, while delivering new capabilities in a single device. Introduced as the newly branded Numonyx Omneo PCM, today's new products promise up to 300 times faster write speeds and ten times more write endurance than today's flash memory.

Intel Corporation and Numonyx B.V. announced a key breakthrough in the research of phase change memory (PCM), a new non-volatile memory technology that combines many of the benefits of today's various memory types. For the first time, researchers have demonstrated a 64Mb test chip that enables the ability to stack, or place, multiple layers of PCM arrays within a single die. These findings pave the way for building memory devices with greater capacity, lower power consumption and optimal space savings for random access non-volatile memory and storage applications.

The achievements are a result of an ongoing joint research program between Numonyx and Intel that has been focusing on the exploration of multi-layered or stacked PCM cell arrays. Intel and Numonyx researchers are now able to demonstrate a vertically integrated memory cell - called PCMS (phase change memory and switch). PCMS is comprised of one PCM element layered with a newly used Ovonic Threshold Switch (OTS) in a true cross point array. The ability to layer or stack arrays of PCMS provides the scalability to higher memory densities while maintaining the performance characteristics of PCM, a challenge that is becoming increasingly more difficult to maintain with traditional memory technologies.

Samsung Electronics Co., Ltd. and Numonyx B.V. today announced they are jointly developing market specifications for Phase Change Memory (PCM) products, a next generation memory technology that will help enable makers of feature-rich handsets and mobile applications, embedded systems* and high-end computing devices to meet the increasing performance and power demands for platforms loaded with content and data. Creating common hardware and software compatibility for PCM products should help simplify designs and shorten development time, enabling manufacturers to quickly transition to high-performance, low-power PCM products from both companies.

Phase change memory produces very fast read and write speeds at lower power than conventional NOR and NAND flash memory, and allows for bit alterability normally seen in RAM.

"Our joint efforts with Numonyx will enable a more secure path for introducing PCM into the mobile environment," said SeiJin Kim, vice president, mobile memory technology planning and enabling, Samsung Electronics. "We anticipate that PCM will eventually be a major addition to our family of memory products, one that will nicely compliment our other mobile memory solutions and ultimately increase our leadership in the industry," he added.

Intel Corporation and STMicroelectronics reached a key industry milestone today as they began shipping prototype samples of a future product using a new, innovative memory technology called Phase Change Memory (PCM). The prototypes are the first functional silicon to be delivered to customers for evaluation, bringing the technology one step closer to adoption.