TrendForce's latest findings reveal that the NAND Flash market continues to be plagued by oversupply in the first quarter of 2025, leading to sustained price declines and financial strain for suppliers. However, TrendForce anticipates a significant improvement in the market's supply-demand balance in the second half of the year.

Key factors contributing to this shift include proactive production cuts by manufacturers, inventory reductions in the smartphone sector, and growing demand driven by AI and DeepSeek applications. These elements are expected to alleviate oversupply and support a price rebound for NAND Flash.

Samsung Electronics today reported financial results for the fourth quarter and the fiscal year 2024. The Company posted KRW 75.8 trillion in consolidated revenue and KRW 6.5 trillion in operating profit in the quarter ended December 31, 2024. For the full year, it reported KRW 300.9 trillion in annual revenue and KRW 32.7 trillion in operating profit.

Although fourth quarter revenue and operating profit decreased on a quarter-on-quarter (QoQ) basis, annual revenue reached the second-highest on record, surpassed only in 2022. Meanwhile, operating profit was down KRW 2.7 trillion QoQ, due to soft market conditions especially for IT products, and an increase in expenditures including R&D. In the first quarter of 2025, while overall earnings improvement may be limited due to weakness in the semiconductors business, the Company aims to pursue growth through increased sales of smartphones with differentiated AI experiences, as well as premium products in the Device eXperience (DX) Division.

In the design of wearable devices, every millimeter matters. As AI technology becomes deeply integrated, wearable devices demand not only enhanced performance but also the ability to deliver more functionalities within highly limited spaces. Recently, Longsys introduced a 7.2 mm × 7.2 mm subsize eMMC, providing a groundbreaking memory solution for optimizing the physical space of AI wearables.

Ultra-Compact: Unlocking New Possibilities for Wearable Design
7.2 mm × 7.2 mm is one of the smallest subsize eMMCs currently available on the market, achieving maximum space efficiency. Its 153 solder balls nearly cover the entire panel, pushing the design to the very edge of physical limits. Compared to the standard 11.5 mm × 13 mm eMMC, its surface area is reduced by approximately 65%, with a thickness of just 0.8 mm. Featuring a lightweight design, it weighs only 0.1 g (approx.), nearly 67% lighter than the standard 0.3 g eMMC. This ultra-compact design frees up additional space for other internal components, enabling wearable devices to maintain a sleek and lightweight form while integrating more functional modules to meet diverse user demands.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD220G: Universal Flash Storage 4.1. In addition, an update to the complementary JESD223F UFS Host Controller Interface (UFSHCI) version 4.1 standard has also been published. Developed for mobile applications and computing systems requiring high performance with low power consumption, UFS 4.1 offers faster data access and improved performance over the earlier version of the standard while maintaining hardware compatibility to UFS 4.0. Both standards are available for download from the JEDEC website.

"JEDEC members are continually innovating to shape the standards that will drive the next generation of mobile devices and advanced applications, and the committee's dedication to ongoing improvements to the UFS series is paving the way for future innovation," said Mian Quddus, Chairman of the JEDEC Board of Directors and the JC-64 Committee for Embedded Memory Storage and Removable Memory Cards.

SK hynix Inc. announced today that it will showcase its innovative AI memory technologies at CES 2025, to be held in Las Vegas from January 7 to 10 (local time). A large number of C-level executives, including CEO Kwak No-jung, CMO (Chief Marketing Officer) Justin Kim and Chief Development Officer (CDO) Ahn Hyun, will attend the event. "We will broadly introduce solutions optimized for on-device AI and next-generation AI memories, as well as representative AI memory products such as HBM and eSSD at this CES," said Justin Kim. "Through this, we will publicize our technological competitiveness to prepare for the future as a Full Stack AI Memory Provider."

SK hynix will also run a joint exhibition booth with SK Telecom, SKC and SK Enmove, under the theme "Innovative AI, Sustainable Tomorrow." The booth will showcase how SK Group's AI infrastructure and services are transforming the world, represented in waves of light. SK hynix, which is the world's first to produce 12-layer HBM products for 5th generation and supply them to customers, will showcase samples of HBM3E 16-layer products, which were officially developed in November last year. This product uses the advanced MR-MUF process to achieve the industry's highest 16-layer configuration while controlling chip warpage and maximizing heat dissipation performance.

A South Korean online retailer has listed Huawei's eKitStore Extreme 200E M.2 NVMe SSD for sale at 47,500 Won ($32) for the 1 TB model. This marks Huawei's entry into consumer storage products after previously only manufacturing server SSDs. The PCIe 4.0 drive's specifications show read speeds of 7,400 MB/s and write speeds of 6,700 MB/s. Beyond confirming the use of QLC memory without a DRAM cache, Huawei has not disclosed the drive's internal components. Due to trade restrictions, both the controller and memory chips likely come from Chinese manufacturers, though specific suppliers remain unknown. Chinese makers have been recorded to use Silicon Motion's SSD controllers, but domestic controllers are also an option here.

Manufacturing costs for similar drives typically exceed $32, raising questions about the pricing strategy. The drive's components could match those used in other brands' SSDs, as multiple storage companies often use identical parts in their products. For NAND Flash, Huawei likely sourced its chips from YMTC, whose Xtacking 4.0 proves to be quite a success. The drive has appeared only at one retailer so far, and Huawei has not announced plans for sales in other regions. This price is notably lower than comparable PCIe 4.0 drives. Common retail prices for 1 TB PCIe 4.0 SSDs are typically more than double this amount. Whether this represents a temporary price or a long-term strategy remains unclear. Perhaps Huawei is operating at a net loss to gain some customers, with possible plans for more SSDs in the future, along with the PCIe 5.0 version.

SK hynix Inc. announced today that it has completed development of its high-capacity SSD product, PS1012 U.2, designed for AI data centers. As the era of AI accelerates, the demand for high-performance enterprise SSDs (eSSD) is rapidly increasing, and QLC technology, which enables high capacity, has become the industry standard. In line with this trend, SK hynix has developed a 61 TB product using this technology and introduced it to the market.

SK hynix has been leading the SSD market for AI data centers with Solidigm, a subsidiary which commercialized QLC-based eSSD for the first time in the world. With the development of PS1012, the company expects to build a balanced SSD portfolio, thereby maximizing synergy between the two companies. With the latest 5th generation (Gen 5) PCIe, PS1012 doubles its bandwidth compared to 4th generation based products. As a result, the data transfer speed reaches 32 GT/s (Gig-transfers per second), with the sequential read performance of 13 GB/s (Gigabyte per second), which is twice that of previous generation products.

Crucial has reportedly discontinued the MX500 line of SATA SSDs after nearly 7 years of market presence. The MX500 is arguably the most popular line of SATA 6 Gbps SSDs, and comes in both the 2.5-inch and M.2-SATA form-factors. The drive continued its run into 2020s given its extremely low price-per-GB, and reasonable levels of performance to serve as a warm storage solution in client PCs. The market is changing, with the advent of cheap QLC NAND NVMe SSDs, an increase in the number of NVMe slots on today's motherboards, and a reduction in SATA ports, which mean that it is time for Crucial to retire the MX500. The MX500 is still in stock with retailers, and comes in capacities of up to a respectable 4 TB, although at prices similar to NVMe Gen 3 or Gen 4 drives based on QLC NAND, such as Crucial's own P3 Plus. The 4 TB variant of the P3 Plus Gen 4 NVMe SSD in fact costs less than the 4 TB MX500, but with significantly higher performance.

TrendForce's latest investigations found that the enterprise SSD market experienced significant growth in 3Q24, driven by robust demand from AI-related applications. Prices surged as suppliers struggled to keep pace with market needs, pushing overall industry revenue up by an impressive 28.6% QoQ. Demand for high-capacity models was especially strong, fueled by the arrival of NVIDIA's H-series products and sustained orders for AI training servers. As a result, the total procurement volume for enterprise SSDs rose 15% compared to the previous quarter.

Looking ahead to 4Q24, TrendForce forecasts a slowdown in enterprise SSD revenue as procurement demand begins to cool. Total procurement volume is expected to dip, with the peak buying period behind and server OEM orders being slightly revised downward. As shipment volume declines, overall industry revenue is also projected to decrease in the fourth quarter.

DDN, a leading force in AI data intelligence, today set a new standard in AI and HPC data management with the launch of trailblazing upgrades to its data intelligence platform at Supercomputing 2024 in Atlanta. Built in close collaboration with NVIDIA, these advancements give organizations unmatched power to scale and optimize AI data operations—delivering efficiency, seamless scalability, and the kind of ROI that fuels business growth and innovation.

At the core of this innovation is DDN's deep integration with NVIDIA, bringing unparalleled performance enhancements to AI and HPC workloads. With the debut of DDN's next-generation A³I data platform, the AI400X3 organizations can now achieve a staggering 60 percent performance boost over previous generations. This boost translates to faster AI training, real-time insights, and smoother data processing, giving enterprises the agility to make rapid decisions and gain a competitive edge in today's data-driven landscape.

Phison Electronics, a leading innovator in NAND Flash technologies, today announced the newest addition and highest available capacity of the Pascari D-Series data center-optimized SSDs to be showcased at SC24. The Pascari D205V drive is the first PCIe Gen 5 128 TB data center class SSD available for preorder to address shifting storage demands across use cases including AI, media and entertainment (M&E), research and beyond. In a single drive the Pascari D205V offers 122.88 TB of storage, creating a four-to-one capacity advantage over traditional cold storage hard drives while shrinking both physical footprint and OPEX costs.

While the exponential data-deluge continues to strain data center infrastructure, organizations face a tipping point to maximize investment while remaining conscious of footprint, cost efficiency and power consumption. The Pascari D205V read-intensive SSD combines Phison's industry-leading X2 controller and the latest 2 Tb 3D QLC technology engineered to enable unequaled 14,600 MB/s sequential read and 3,000K IOPS random read performance. By doubling both the read speeds against Gen 4 as well as the capacity against the 61.44 TB enterprise SSDs currently available on the market today, the Pascari D205V allows customers to upgrade to larger datasets per server, top-tier capacity-per-watt utilization and unparalleled read performance.

Solidigm, a leading provider of innovative NAND flash memory solutions, announced today the introduction of the world's highest capacity PCIe solid-state drive (SSD): the 122 TB (terabyte) Solidigm D5-P5336 data center SSD. The D5-P5336 doubles the storage space of Solidigm's earlier 61.44 TB version of the drive and is the world's first SSD with unlimited Random Write endurance for five years—offering an ideal solution for AI and data-intensive workloads. Just how much storage is 122.88 TB? Roughly enough for 4K-quality copies of every movie theatrically released in the 1990s, 2.6 times over.

Data storage power, thermal and space constraints are accelerating as AI adoption increases. Power and space-efficient, the new 122 TB D5-P5336 delivers industry-leading storage efficiency from the core data center to the edge. Data center operators can deploy with confidence the 122 TB D5-P5336 from Solidigm, the proven QLC (quad-level cell) density leader with more than 100EB (exabytes) of QLC-based product shipped since 2018.

As AI accelerates data expansion, enterprises face increasing challenges in managing large volumes of data effectively. Tiered storage solutions have emerged as the preferred approach for balancing performance and costs. Solid State Drives (SSDs), with their fast read and write speeds, low latency and high power efficiency, are becoming the dominant storage selection for data centers and AI servers. Among SSD techniques, QLC SSDs offer unique advantages in costs and storage density, making them particularly suited for read-intensive AI applications. Therefore, high-capacity SSDs, such as 32 TB and 64 TB models, are gaining traction as a new storage solution in the market.

Read-Intensive Applications: Mainstream Enterprise SSD Use Cases
According to the latest research from FI (Forward Insight), up to 91% of current PCIe SSDs deployments are used in applications with DWPD of less than 1, and the share is expected to reach 99% by 2028. this shift underscores the increasing prevalence of read-intensive applications and data centers, a space where QLC SSDs excel.

KIOXIA America, Inc. today announced that it has begun mass production of the industry's first Universal Flash Storage (UFS) Ver. 4.0 embedded flash memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology.

QLC UFS offers a higher bit density than traditional TLC UFS, making it suitable for mobile applications that require higher storage capacities. Advancements in controller technology and error correction have enabled QLC technology to achieve this while maintaining competitive performance. KIOXIA's new 512 gigabyte (GB) QLC UFS achieves sequential read speeds of up to 4,200 megabytes per second (MB/s) and sequential write speeds of up to 3,200 MB/s, taking full advantage of the UFS 4.0 interface speed.

TrendForce's latest reports reveal that the second quarter of 2024 saw a significant increase in demand for enterprise SSDs due to the increased deployment of NVIDIA GPU platforms and rising storage needs driven by AI applications, along with a surge in demand from server brands. The surge in demand for high-capacity SSDs for AI applications—coupled with suppliers' inability to adjust capacity in the first half of the year—resulted in a supply shortage that drove average enterprise SSD prices up by more than 25% QoQ. This price increase led to a revenue growth of over 50% for suppliers.

Looking ahead to the third quarter, demand from North American CSP customers continues to rise, and server brands show no signs of slowing down their orders, further boosting procurement volumes of enterprise SSD. With supply shortages persisting into the third quarter, TrendForce forecasts a 15% increase in contract prices compared to the previous quarter, with supplier revenues expected to grow by nearly 20%.

Samsung Electronics, the world leader in advanced memory technology, today announced it has begun mass production of its one-terabit (Tb) quad-level cell (QLC) 9th-generation vertical NAND (V-NAND).

With the industry's first mass production of QLC 9th-generation V-NAND, following the industry's first triple-level cell (TLC) 9th-generation V-NAND production in April this year, Samsung is solidifying its leadership in the high-capacity, high-performance NAND flash market.

Western Digital, a leader in Flash and HDD data storage, is unveiling groundbreaking solutions and technology demonstrations at FMS 2024 that raise the bar for performance, capacity and efficiency for transformative AI Data Cycle workloads. These innovations cater to diverse market segments from hyperscale cloud to automotive and consumer storage. Attendees will also gain insights from a keynote address by Rob Soderbery, executive vice president and general manager of Western Digital's Flash Business Unit, on Tuesday at 3 PM. During the keynote, Soderbery will delve into the strategic advancements propelling the future of NAND, AI and data storage from the data center to the edge.

"As AI technologies advance and become increasingly embedded in the world around us, the demand for storage will only continue to grow," said Soderbery. "Western Digital's product and technology roadmaps are strategically aligned to ensure our customers have the most advanced, reliable solutions to stay ahead in the rapidly changing AI landscape. This holistic approach ensures that our customers receive the most power-efficient, high-performing and high-capacity solutions tailored to their specific needs. We are excited to showcase our full range of products and new technologies and demonstrate how they can transform AI now and into the future."

Samsung Electronics today reported financial results for the second quarter ended June 30, 2024. The Company posted KRW 74.07 trillion in consolidated revenue and operating profit of KRW 10.44 trillion as favorable memory market conditions drove higher average sales price (ASP), while robust sales of OLED panels also contributed to the results.

Memory Market Continues To Recover; Solid Second Half Outlook Centered on Server Demand
The DS Division posted KRW 28.56 trillion in consolidated revenue and KRW 6.45 trillion in operating profit for the second quarter. Driven by strong demand for HBM as well as conventional DRAM and server SSDs, the memory market as a whole continued its recovery. This increased demand is a result of the continued AI investments by cloud service providers and growing demand for AI from businesses for their on-premise servers.

DapuStor Corporation, a pioneer in high-performance data storage solutions, announced today that it is expanding its collaboration with Marvell to deliver breakthrough Flexible Data Placement (FDP) technology optimized for Quad-Level Cell (QLC) and Triple-Level Cell (TLC) Solid-State Drives (SSDs). This collaboration aims to revolutionize the storage industry by addressing the inherent challenges of QLC SSDs, enhancing their performance, endurance, and capacity, thereby providing a robust and cost-effective solution for data centers, cloud computing, and high-performance computing environments.

Unlocking the Potential of QLC SSDs with FDP Technology
QLC SSDs are renowned for their ability to store four bits of data per memory cell, offering significant capacity advantages and a lower Total Cost of Ownership (TCO) compared to other SSD types. Despite these benefits, QLC SSDs face challenges such as lower endurance and slower write speeds. The innovative FDP technology supported in the Marvell Bravera SC5 SSD controller with firmware level solution developed by DapuStor directly addresses these issues.

TrendForce's latest report on the memory industry reveals that DRAM and NAND Flash revenues are expected to see significant increases of 75% and 77%, respectively, in 2024, driven by increased bit demand, an improved supply-demand structure, and the rise of high-value products like HBM.

Furthermore, industry revenues are projected to continue growing in 2025, with DRAM expected to increase by 51% and NAND Flash by 29%, reaching record highs. This growth is anticipated to revive capital expenditures and boost demand for upstream raw materials, although it will also increase cost pressure for memory buyers.

Samsung has introduced its latest BM1743 SSD, boasting an impressive 61.44 TB of storage capacity. The BM1743 utilizes Samsung's seventh-generation 3D NAND (V-NAND) technology, featuring 176 layers of memory cells. This represents a significant leap from its predecessor, the BM1733, which debuted in 2020 with 96-layer technology and a maximum capacity of 32 TB. Performance-wise, the BM1743 doesn't disappoint. It delivers up to 1.6 million random read IOPS and 110,000 random write IOPS, with sequential read and write speeds of 7.2 GB/s and 2.0 GB/s, respectively. These figures position the drive as a highly capable solution for read-intensive workloads. Samsung claims that the new SSD offers double the sequential read and write speeds of its fifth-generation technology, with random reads quadrupling in performance. This advancement suggests that quad-level cell (QLC) SSDs are now approaching the performance levels of their triple-level cell (TLC) counterparts while offering superior storage density.

The BM1743 is available in the traditional U.2 form factor, with an E3.S variant supporting PCIe Gen 5 also in the lineup, thanks to the custom Samsung controller. Samsung has enhanced the durability and data retention capabilities of the BM1743. The new drive boasts an improved endurance rating of 0.26 drive writes per day (DWPD) throughout its warranty period, a notable increase from the BM1733's 0.18 DWPD. Additionally, the BM1743 extends its power-off data retention to three months, tripling the one-month period of its predecessor. In a hint of things to come, Samsung has suggested that a 122.88 TB model may be on the horizon, potentially doubling the capacity of the BM1743. This new offering puts Samsung in direct competition with Solidigm's D5-P5336, which has dominated the high-capacity SSD market for the past year. High-density storage solutions are becoming more important as AI and HPC tasks require and produce massive amounts of data.

Kioxia Corporation, a world leader in memory solutions, today announced that it started sample shipments of 2 Tb (Tera bit) Quad-Level-Cell (QLC) memory devices with its eighth-generation BiCS FLASH 3D flash memory technology. This 2 Tb QLC device has the highest capacity in the industry, elevating storage devices to a new capacity point that will drive growth in multiple application segments including AI.

With its latest BiCS FLASH technology, Kioxia has achieved both vertical and lateral scaling of memory die through proprietary processes and innovative architectures. In addition, the company has implemented the groundbreaking CBA (CMOS directly Bonded to Array) technology, which enables the creation of higher density devices and an industry-leading interface speed of 3.6 Gbps. Together, these advanced technologies are applied in the creation of 2 Tb QLC, resulting in the industry's highest capacity memory device.

TrendForce reports that while the enterprise sector continues to invest in server infrastructure—especially with the rising adoption of AI driving demand for enterprise SSDs—the consumer electronics market remains lackluster. This, combined with NAND suppliers aggressively ramping up production in the second half of the year, is expected to push the NAND Flash sufficiency ratio up to 2.3% in the third quarter, curbing the blended price hike to a modest 5-10%.

This year, NAND Flash prices saw a robust rebound as manufacturers kept production in check during the first half, helping them regain profitability. However, with a noticeable ramp-up in production and sluggish retail demand, wafer spot prices have dropped significantly. Some wafer prices are now over 20% below contract prices, casting doubts on the sustainability of future price hikes.

Kioxia presented a technology roadmap at the IWM 2024 conference in Seoul, projecting the development of 1,000-layer 3D NAND by 2027. This ambitious goal is based on extrapolating past trends, which saw NAND layers increase from 24 in 2014 to 238 in 2022. Kioxia's plan involves not only increasing layer count but also shrinking cell size and increasing bit levels from TLC (3 bits per cell) to QLC (4 bits per cell), and possibly even to PLC (5 bits per cell).

However, these advancements come with significant technical challenges. Etching the vertical connecting holes (through-silicon vias or TSVs) are harder to achieve and can lead to higher channel resistance. Kioxia proposes solutions such as using single-crystalline silicon instead of polysilicon and switching from tungsten to molybdenum to reduce resistance. They also suggest moving to multi-lane wordlines to reduce the die area needed for electrical connectivity.

Western Digital has released a new budget friendly SSD that got a serious jump in model number, since the company decided to call it the SN5000. Its predecessor is the SN580 launched just under a year ago and price wise, it's the better option of the two. The new SN5000 uses the same BiCS 5 TLC NAND as the SN580 on the 500 GB to the 2 TB SKU, but according to Anandtech, the 4 TB uses BiCS 6 QLC NAND. The SN5000 is still a PCIe 4.0 x4 NVMe drive, but the overall performance has been significantly improved. If we use the 1 TB SKU for comparison, then the sequential read speeds have gone up by 1 GB/s from 4150 MB/s to 5150 MB/s. The sequential write speed is up 750 MB/s from 4150 MB/s to 4900 MB/s.

As for random performance, the read IOPS are up from 600K IOPS to 730K IOPS and the write IOPS are up slightly from 750K to 770K. The 4 TB QLC SKU is said to deliver even better performance with the exception of the random read IOPS. The 1 TB SKU is said to have a write endurance of 600 TBW, but the 4 TB SKU only offers 1200 TBW. That's 0.33 drive writes per day (DWPD) for the 1 TB SKU vs. 0.16 DWPD for the 4 TB SKU, showing the weakness of the QLC NAND. A new feature for the SN5000 series compared to previous WD Blue NVMe drives is support for TGC Pyrite 2.01 encryption. The WD SN5000-series starts at US$70 for the 500 GB model, going up to US$80 for 1 TB, US$140 for 2 TB and topping out at US$280 for the 4 TB model. WD only seems to have the 500 GB model in stock, with all the others being available in 3-4 weeks time. All SKUs come with a five year warranty.