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Crucial P310 1 TB

1 TB
Capacity
Phison E27T
Controller
QLC
Flash
PCIe 4.0 x4
Interface
M.2 2230
Form Factor
SSD Controller
Controller
The Crucial P310 is a solid-state drive in the M.2 2230 form factor, launched on July 17th, 2024. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Crucial P310 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5027-E27T from Phison, a DRAM cache is not available. Crucial has installed 232-layer QLC NAND flash on the P310, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The P310 is rated for sequential read speeds of up to 7,100 MB/s and 6,000 MB/s write; random IOPS reach up to 1000K for reads and 1200K for writes.
At its launch, the SSD was priced at 115 USD. The warranty length is set to five years, which is an excellent warranty period. Crucial guarantees an endurance rating of 220 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Variants: 1 TB 2 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: Jul 17th, 2024
Price at Launch: 115 USD
Part Number: CT1000P310SSD2
Market: Consumer

Physical

Form Factor: M.2 2230 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 2.0
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5027-E27T
Architecture: ARM 32-bit Cortex-R5
Core Count: Triple-Core
Frequency: 1,200 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 4 @ 3,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Micron
Name: N58R FortisFlash
Type: QLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: 1 chip @ 8 Tbit
ONFI: 4.2
Topology: Replacement Gate
Die Size: 54 mm²
(19.0 Gbit/mm²)
Dies per Chip: 8 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 255 per NAND String
91.0% Vertical Efficiency
Program Time (tProg): 1220 µs
Die Write Speed: 52 MB/s
Page Size: 16 KB
Block Size: 3712 Pages
Plane Size: 566 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 7,100 MB/s
Sequential Write: 6,000 MB/s
Random Read: 1,000,000 IOPS
Random Write: 1,200,000 IOPS
Endurance: 220 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.1
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Notes

Controller:

Main cores running at 1.2GHz while the ECC engine runs at 600 MHz

NAND Die:

Read Time (tR): 98 µs ~ 128 µs
Program Time (tPROG): ~ 1220 µs (Approximation)

Nov 19th, 2024 02:11 EST change timezone

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