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Fanxiang S770 1 TB (SK Hynix TLC V7 512Gb)

1 TB
Capacity
IG5236
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Fanxiang S770 is a solid-state drive in the M.2 2280 form factor, launched in 2022. It is only available in the 1 TB capacity listed on this page. With the rest of the system, the Fanxiang S770 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the IG5236 (Rainier) from InnoGrit, a DRAM cache chip is available. Fanxiang has installed 176-layer TLC NAND flash on the S770, the flash chips are made by SK Hynix. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are soaked up more quickly. The cache is sized at 326 GB, once it is full, writes complete at 2163 MB/s. Copying data out of the SLC cache (folding) completes at 1200 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The S770 is rated for sequential read speeds of up to 7,400 MB/s and 5,400 MB/s write.
At its launch, the SSD was priced at 85 USD. The warranty length is set to five years, which is an excellent warranty period. Fanxiang guarantees an endurance rating of 700 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1000 GB)
Hardware Versions:
  • SK Hynix TLC V7 512Gb
    1 TB
  • YMTC TLC CDT1B 512Gb 128-Layers
    500 GB 1 TB 2 TB
Overprovisioning: 92.7 GB / 10.0 %
Production: Active
Released: 2022
Price at Launch: 85 USD
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 0.77 W (Idle)
3.9 W (Avg)
5.7 W (Max)

Controller

Manufacturer: InnoGrit
Name: IG5236 (Rainier)
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 8 @ 1,200 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V7
Type: TLC
Technology: 176-layer
Speed: 1600 MT/s
Capacity: 4 chips @ 2 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 47 mm²
(10.9 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Word Lines: 196 per NAND String
89.8% Vertical Efficiency
Read Time (tR): 50 µs
Program Time (tProg): 380 µs
Die Read Speed: 1280 MB/s
Die Write Speed: 168 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4224 Pages
Plane Size: 1084 Blocks

DRAM Cache

Type: DDR4-2666 CL17
Name: SK Hynix H5AN4G6NBJR-VKC
Capacity: 1024 MB
(2x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 7,400 MB/s
Sequential Write: 5,400 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 700 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: approx. 326 GB
(dynamic only)
Speed when Cache Exhausted: approx. 2163 MB/s
Cache Folding Speed: 1200 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

NAND Die:

Endurance: 1.500 to 3.000 P.E.C.
tPROG withouth Overhead: ~ 380 µs (accounting for ~ 168 MB/s of throughput per die)
tPROG w/ +/- 25% Overhead: ~ 507 µs (accounting for ~ 126 MB/s of throughput per die)
NAND string : H25G9TC18488 NAND MaxPE cycles: 1500 NAND Freq : 1200 Channel number: 4 CE number : 4 Total Bank: 16 Flash Type: TLC Blocks/CE: 1084 Pages/Block: 4224 Page Size

Jan 22nd, 2025 12:02 EST change timezone

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