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Klevv Genuine G560 4 TB

4 TB
Capacity
Phison E26
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Klevv Genuine G560 is a solid-state drive in the M.2 2280 form factor, launched on September 23rd, 2024. It is available in capacities ranging from 1 TB to 4 TB. This page reports specifications for the 4 TB variant. With the rest of the system, the Klevv Genuine G560 interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the PS5026-E26 from Phison, a DRAM cache chip is available. Klevv has installed 232-layer TLC NAND flash on the Genuine G560, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The Genuine G560 is rated for sequential read speeds of up to 14,000 MB/s and 12,000 MB/s write; random IO reaches 1400K IOPS for read and 1400K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Klevv guarantees an endurance rating of 3000 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 4 TB (4000 GB)
Variants: 1 TB 2 TB 4 TB
Overprovisioning: 370.7 GB / 10.0 %
Production: Active
Released: Sep 23rd, 2024
Part Number: K04TBM2SP0-G56
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 5.0 x4
Protocol: NVMe 2.0
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5026-E26
Architecture: ARM 32-bit Cortex-R5 + AndesCore 32-bit N25F RISC-V
Core Count: 5-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 2,400 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B58R FortisFlash
Type: TLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: 4 chips @ 8 Tbit
ONFI: 5.0
Topology: Replacement Gate
Die Size: 70 mm²
(14.6 Gbit/mm²)
Dies per Chip: 8 dies @ 1 Tbit
Planes per Die: 6
Decks per Die: 2
Word Lines: 255 per NAND String
91.0% Vertical Efficiency
Read Time (tR): 61 µs
Program Time (tProg): 600 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1574 MB/s
Die Write Speed: 160 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 2784 Pages
Plane Size: 3402 Blocks

DRAM Cache

Type: LPDDR4-4266
Name: SK Hynix
Capacity: 8192 MB
(2x 4096 MB)
Organization: 32Gx16

Performance

Sequential Read: 14,000 MB/s
Sequential Write: 12,000 MB/s
Random Read: 1,400,000 IOPS
Random Write: 1,400,000 IOPS
Endurance: 3000 TBW
Warranty: 5 Years
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

This controller features a dual core Cortex-R5 as a primary cores, while a Tripple AndesCore 32-bit N25F RISC-V at 400-500 MHz act as a CoX Processor.

NAND Die:

2-Deck design with 116 word line per deck
Upper deck: 128-Gates
Lower Deck: 127-gates
Programming Throughput - not confirmed, calculated by estimated tPROG
tPROG - Estimated, not confirmed

Nov 23rd, 2024 19:17 EST change timezone

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