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Micron 9100 Max 2.3 TB

2.3 TB
Capacity
89HF16P04CG3
Controller
MLC
Flash
PCIe 3.0 x4
Interface
U.2
Form Factor
Front
SSD Controller
Controller
NAND Die
NAND Die
The Micron 9100 Max was a solid-state drive in the U.2 form factor, launched in July 2017, that is no longer in production. It was available in capacities ranging from 1.2 TB to 2.3 TB. This page reports specifications for the 2.3 TB variant. With the rest of the system, the Micron 9100 Max interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the NVMEC16 Princeton 89HF16P04CG3 from PMC-Sierra, a DRAM cache chip is available. Micron has installed MLC NAND flash on the 9100 Max, the flash chips are made by Micron. The 9100 Max is rated for sequential read speeds of up to 3,200 MB/s and 2,200 MB/s write; random IO reaches 750K IOPS for read and 300K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Micron guarantees an endurance rating of 9600 TBW, a very high value, making this drive a good choice for write-intensive enterprise applications.

Solid-State-Drive

Capacity: 2.3 TB (2400 GB)
Variants: 1.2 TB 2.3 TB
Overprovisioning: 1860.8 GB / 83.3 %
Production: End-of-life
Released: Jul 2017
Part Number: MTFDHAL2T4MCF
Market: Enterprise

Physical

Form Factor: U.2
Interface: PCIe 3.0 x4
Protocol: NVMe 1.1
Power Draw: 7.0 W (Idle)
25.0 W (Avg)
30.0 W (Max)

Controller

Manufacturer: PMC-Sierra
Name: NVMEC16 Princeton 89HF16P04CG3
Architecture: RISC Tensilica Xtensa 32-bit
Core Count: 16-Core
Frequency: 500 MHz
Flash Channels: 16 @ 400 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: L95B (16nm)
Part Number: NW680 (MT29F1T08CUCCBH8-6R)
Type: MLC
Technology: Planar
Speed: 50 MT/s .. 333 MT/s
Capacity: 32 chips @ 1 Tbit
ONFI: 3.2
Topology: Floating Gate
Process: 16 nm
Dies per Chip: 8 dies @ 128 Gbit
Planes per Die: 2
Read Time (tR): 115 µs
Program Time (tProg): 1600 µs
Block Erase Time (tBERS): 3.0 ms
Die Read Speed: 278 MB/s
Die Write Speed: 20 MB/s
Endurance:
(up to)		 3000 P/E Cycles
Page Size: 16 KB
Block Size: 512 Pages
Plane Size: 1048 Blocks

DRAM Cache

Type: DDR3L-1600 CL11
Name: Micron MT41K512M8RH-125:E (D9QBJ)
Capacity: 4608 MB
(9x 512 MB)
Organization: 4Gx8

Performance

Sequential Read: 3,200 MB/s
Sequential Write: 2,200 MB/s
Random Read: 750,000 IOPS
Random Write: 300,000 IOPS
Endurance: 9600 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 2.2
Write Cache: N/A
Endurance - Random Writes 4KB:6570 TBW

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

Microsemi (previously PMC) Flashtec NVMe1032 controller

NAND Die:

• Organization
– Page size x8: 18,526 bytes (16,384 + 1872 bytes)
– Block size: 512 pages (8192K + 608K bytes)
– Plane size: 2 planes x 1048 blocks per plane
– Device size: 128Gb: 2096 blocks;
256Gb: 4192 blocks;
512Gb: 8384 blocks;
1Tb: 16,768 blocks
2Tb: 33,536 blocks

• NV-DDR2 I/O performance
– Up to NV-DDR2 timing mode 6
– Clock rate: 6ns (NV-DDR2)
– Read/write throughput per pin: 333 MT/s
• NV-DDR I/O performance
– Up to NV-DDR timing mode 5
– Clock rate: 10ns (NV-DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
– tRC/tWC: 20ns (MIN)
– Read/write throughput per pin: 50 MT/s
• Array performance
– Read page: 115μs (MAX)
– Program page: 1600μs (TYP)
– Erase block: 3ms (TYP)
Nov 17th, 2024 03:22 EST change timezone

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