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Micron 9400 Max 26 TB

26 TB
Capacity
NVMe 3016
Controller
TLC
Flash
PCIe 4.0 x4
Interface
U.3
Form Factor
Flash
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Micron 9400 Max is a solid-state drive in the U.3 form factor, launched on January 9th, 2023. It is available in capacities ranging from 13 TB to 26 TB. This page reports specifications for the 26 TB variant. With the rest of the system, the Micron 9400 Max interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PM8628C1-F3EI MorrisTown from Microchip Flashtech Microsemi, a DRAM cache chip is available. Micron has installed 176-layer TLC NAND flash on the 9400 Max, the flash chips are made by Micron. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The 9400 Max is rated for sequential read speeds of up to 7,000 MB/s and 7,000 MB/s write; random IOPS reach up to 1500K for reads and 550K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Micron guarantees an endurance rating of 282600 TBW, a very high value, making this drive a good choice for write-intensive enterprise applications.

Solid-State-Drive

Capacity: 26 TB (25600 GB)
Variants: 13 TB 26 TB
Overprovisioning: 8926.1 GB / 37.4 %
Production: Active
Released: Jan 9th, 2023
Part Number: Unknown
Market: Enterprise

Physical

Form Factor: U.3
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 5.0 W (Idle)
17.0 W (Avg)
23.0 W (Max)

Controller

Manufacturer: Microchip Flashtech Microsemi
Name: PM8628C1-F3EI MorrisTown
Architecture: ARM 64-bit Cortex-A53 + CoreLink CCN-502 + CoreLink GIC-500
Foundry: TSMC FinFET
Process: 16 nm
Flash Channels: 16 @ 1,200 MT/s
Chip Enables: 16
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B47R FortisFlash
Part Number: NC012
Rebranded: Micron MT29FB8T08EALAAM5-QK:E
Type: TLC
Technology: 176-layer
Speed: 1200 MT/s .. 1600 MT/s
Capacity: 32 chips @ 8 Tbit
ONFI: 4.1
Topology: Replacement Gate
Die Size: 50 mm²
(10.2 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 502 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1143 MB/s
Die Write Speed: 127 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2112 Pages
Plane Size: 550 Blocks

DRAM Cache

Type: DDR4
Name: Micron MT40A2G8SA-062E:F (D8CJV)
Capacity: Unknown
Organization: x8

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 7,000 MB/s
Random Read: 1,500,000 IOPS
Random Write: 550,000 IOPS
Endurance: 282600 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 6.0
Write Cache: N/A
Random 4K Endurance:140160 TB (TBW)

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Endurance in pSLC Mode: 40.000 ~ 60.000 P.E.C.
This Flash can run safely at 1600 MT/s (800 MHz)
tPROG with overhead: ~ 533 µs (Avg 120 MB/s per die)

Nov 15th, 2024 22:26 EST change timezone

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