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Micron M600 1 TB

1 TB
Capacity
88SS9189
Controller
MLC
Flash
SATA 6 Gbps
Interface
2.5"
Form Factor
Front
PCB Front
Storage Review
PCB Front
PCB Back
Storage Review
PCB Back
Flash
Storage Review
Flash
DRAM
Storage Review
DRAM
SSD Controller
Controller
NAND Die
NAND Die
The Micron M600 was a solid-state drive in the 2.5" form factor, launched in March 2014, that is no longer in production. It was available in capacities ranging from 128 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Micron M600 interfaces using a SATA 6 Gbps connection. The SSD controller is the 88SS9189 Renoir from Marvell, a DRAM cache chip is available. Micron has installed MLC NAND flash on the M600, the flash chips are made by Micron. The M600 is rated for sequential read speeds of up to 560 MB/s and 510 MB/s write; random IOPS reach up to 100K for reads and 88K for writes.
The SSD's price at launch is unknown. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Micron guarantees an endurance rating of 400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 128 GB 256 GB 512 GB 1 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: End-of-life
Released: Mar 2014
Part Number: MTFDDAK1T0MBF
Market: Consumer

Physical

Form Factor: 2.5"
Interface: SATA 6 Gbps
Protocol: AHCI
Power Draw: 0.15 W (Idle)
Unknown (Avg)
5.2 W (Max)

Controller

Manufacturer: Marvell
Name: 88SS9189 Renoir
Architecture: ARM 32-bit ARM9/ARMv5
Core Count: Dual-Core
Frequency: 400 MHz
Foundry: TSMC
Process: 55 nm
Flash Channels: 8 @ 200 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: L95B (16nm)
Part Number: NW662 (MT29F512G08CKCCBH7-10:C)
Type: MLC
Technology: Planar
Speed: 50 MT/s .. 333 MT/s
Capacity: 16 chips @ 512 Gbit
ONFI: 3.2
Topology: Floating Gate
Process: 16 nm
Dies per Chip: 4 dies @ 128 Gbit
Planes per Die: 2
Read Time (tR): 115 µs
Program Time (tProg): 1600 µs
Block Erase Time (tBERS): 3.0 ms
Die Read Speed: 278 MB/s
Die Write Speed: 20 MB/s
Endurance:
(up to)		 3000 P/E Cycles
Page Size: 16 KB
Block Size: 512 Pages
Plane Size: 1048 Blocks

DRAM Cache

Type: LPDDR2-1066
Name: MT42L256M16D1GU-18 WT:A (D9RLT)
Capacity: 1024 MB
(2x 512 MB)
Organization: 4Gx16

Performance

Sequential Read: 560 MB/s
Sequential Write: 510 MB/s
Random Read: 100,000 IOPS
Random Write: 88,000 IOPS
Endurance: 400 TBW
Warranty: 3 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.4
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • AES-256
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Reviews

Notes

NAND Die:

• Organization
– Page size x8: 18,526 bytes (16,384 + 1872 bytes)
– Block size: 512 pages (8192K + 608K bytes)
– Plane size: 2 planes x 1048 blocks per plane
– Device size: 128Gb: 2096 blocks;
256Gb: 4192 blocks;
512Gb: 8384 blocks;
1Tb: 16,768 blocks
2Tb: 33,536 blocks

• NV-DDR2 I/O performance
– Up to NV-DDR2 timing mode 6
– Clock rate: 6ns (NV-DDR2)
– Read/write throughput per pin: 333 MT/s
• NV-DDR I/O performance
– Up to NV-DDR timing mode 5
– Clock rate: 10ns (NV-DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5
– tRC/tWC: 20ns (MIN)
– Read/write throughput per pin: 50 MT/s
• Array performance
– Read page: 115μs (MAX)
– Program page: 1600μs (TYP)
– Erase block: 3ms (TYP)
Nov 17th, 2024 06:23 EST change timezone

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