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Sabrent Rocket NVMe PCIe M.2 2230 256 GB

256 GB
Capacity
Phison E21T
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2230
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Sabrent Rocket NVMe PCIe M.2 2230 is a solid-state drive in the M.2 2230 form factor, launched on December 10th, 2022. It is available in capacities ranging from 256 GB to 1 TB. This page reports specifications for the 256 GB variant. With the rest of the system, the Sabrent Rocket NVMe PCIe M.2 2230 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5021-E21T from Phison, a DRAM cache is not available. Sabrent has installed 176-layer TLC NAND flash on the Rocket NVMe PCIe M.2 2230, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The Rocket NVMe PCIe M.2 2230 is rated for sequential read speeds of up to 4,650 MB/s and 1,900 MB/s write; random IO reaches 220K IOPS for read and 470K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Sabrent guarantees an endurance rating of 200 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 256 GB
Variants: 256 GB 512 GB 1 TB
Overprovisioning: 17.6 GB / 7.4 %
Production: Active
Released: Dec 10th, 2022
Part Number: SB-2130-256
Market: Consumer

Physical

Form Factor: M.2 2230 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown (Idle)
Unknown (Avg)
3.6 W (Max)

Controller

Manufacturer: Phison
Name: PS5021-E21T
Architecture: ARM 32-bit Cortex-R5
Core Count: Triple-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 4 @ 1,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Micron
Name: B47R FortisFlash
Type: TLC
Technology: 176-layer
Speed: 1200 MT/s .. 1600 MT/s
Capacity: 1 chip @ 2 Tbit
ONFI: 4.1
Topology: Replacement Gate
Die Size: 50 mm²
(10.2 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 195 per NAND String
90.3% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 502 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1143 MB/s
Die Write Speed: 127 MB/s
Endurance:
(up to)
3000 P/E Cycles
(40000 in SLC Mode)
Page Size: 16 KB
Block Size: 2112 Pages
Plane Size: 550 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 4,650 MB/s
Sequential Write: 1,900 MB/s
Random Read: 220,000 IOPS
Random Write: 470,000 IOPS
Endurance: 200 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Notes

Controller:

1 main core using Cortex-R5 with CoXProcessor technology running at 980 ~ 1000 MHz (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficiency

NAND Die:

Endurance in pSLC Mode: 40.000 ~ 60.000 P.E.C.
This Flash can run safely at 1600 MT/s (800 MHz)
tPROG with overhead: ~ 533 µs (Avg 120 MB/s per die)

Nov 15th, 2024 15:20 EST change timezone

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