Capacity: | 1 TB (1024 GB) |
---|---|
Variants: | 1 TB 2 TB |
Overprovisioning: | 70.3 GB / 7.4 % |
Production: | Active |
Released: | Sep 2nd, 2024 |
Part Number: | Unknown |
Market: | Consumer |
Form Factor: | M.2 2280 (Double-Sided) |
---|---|
Interface: | PCIe 5.0 x4 |
Protocol: | NVMe 2.0 |
Power Draw: |
1.5 W (Idle) 5.0 W (Avg) 9.1 W (Max) |
Manufacturer: | Silicon Motion |
---|---|
Name: | SM2508 |
Architecture: | ARM 32-bit Cortex-R8 + ARM 32-bit Cortex-M0 |
Core Count: | 5-Core |
Frequency: | 1,250 MHz |
Foundry: | TSMC FinFET |
Process: | 6 nm |
Flash Channels: | 8 @ 3,600 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Kioxia |
---|---|
Name: | BiCS6 |
Part Number: | CSS52R-THORBRINGUP-8DR |
Rebranded: | SanDisk 024996 512G 3501YGAYS |
Type: | TLC |
Technology: | 162-layer |
Speed: | 2400 MT/s |
Capacity: | 2 chips @ 4 Tbit |
Topology: | Charge Trap |
Die Size: | 49 mm² (10.4 Gbit/mm²) |
Dies per Chip: | 8 dies @ 512 Gbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Word Lines: |
170 per NAND String
95.3% Vertical Efficiency |
Read Time (tR): | 65 µs |
Endurance: (up to) |
3000 P/E Cycles |
Page Size: | 16 KB |
Block Size: | 2430 Pages |
Plane Size: | 432 Blocks |
Type: | LPDDR4-2666 CL19 |
---|---|
Name: | SAMSUNG C-die K4A8G165WC-BCTD |
Capacity: |
1024 MB
(1x 1024 MB) |
Organization: | 8Gx16 |
Sequential Read: | 14,000 MB/s |
---|---|
Sequential Write: | 13,000 MB/s |
Random Read: | 2,000,000 IOPS |
Random Write: | 2,000,000 IOPS |
Endurance: | Unknown |
Warranty: | Unknown |
SLC Write Cache: |
approx. 160 GB
(dynamic only) |
Speed when Cache Exhausted: | approx. 2800 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
Controller:This controller features a Quad-core Cortex-R8 running at 1.25GHz as primary cores, while having a Cortex-M0 as a secondary core for peripheral. NAND Die:Lower Deck: 81 - Strings |