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Silicon Motion SM2508 Engineering Sample 1 TB

1 TB
Capacity
SM2508
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor
PCB Front
Tom's Hardware
PCB Front
SSD Controller
Controller
The Silicon Motion SM2508 Engineering Sample is a solid-state drive in the M.2 2280 form factor, launched on September 2nd, 2024. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Silicon Motion SM2508 Engineering Sample interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the SM2508 from Silicon Motion, a DRAM cache chip is available. Silicon Motion has installed 162-layer TLC NAND flash on the SM2508 Engineering Sample, the flash chips are made by Kioxia. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. The cache is sized at 160 GB, once it is full, writes complete at 2800 MB/s. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The SM2508 Engineering Sample is rated for sequential read speeds of up to 14,000 MB/s and 13,000 MB/s write; random IO reaches 2000K IOPS for read and 2000K for writes.
The SSD's price at launch is unknown. The TBW rating for the Silicon Motion SM2508 Engineering Sample 1 TB is unknown, too.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 1 TB 2 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: Sep 2nd, 2024
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 5.0 x4
Protocol: NVMe 2.0
Power Draw: 1.5 W (Idle)
5.0 W (Avg)
9.1 W (Max)

Controller

Manufacturer: Silicon Motion
Name: SM2508
Architecture: ARM 32-bit Cortex-R8 + ARM 32-bit Cortex-M0
Core Count: 5-Core
Frequency: 1,250 MHz
Foundry: TSMC FinFET
Process: 6 nm
Flash Channels: 8 @ 3,600 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Kioxia
Name: BiCS6
Part Number: CSS52R-THORBRINGUP-8DR
Rebranded: SanDisk 024996 512G 3501YGAYS
Type: TLC
Technology: 162-layer
Speed: 2400 MT/s
Capacity: 2 chips @ 4 Tbit
Topology: Charge Trap
Die Size: 49 mm²
(10.4 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 170 per NAND String
95.3% Vertical Efficiency
Read Time (tR): 65 µs
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 2430 Pages
Plane Size: 432 Blocks

DRAM Cache

Type: LPDDR4-2666 CL19
Name: SAMSUNG C-die K4A8G165WC-BCTD
Capacity: 1024 MB
(1x 1024 MB)
Organization: 8Gx16

Performance

Sequential Read: 14,000 MB/s
Sequential Write: 13,000 MB/s
Random Read: 2,000,000 IOPS
Random Write: 2,000,000 IOPS
Endurance: Unknown
Warranty: Unknown
SLC Write Cache: approx. 160 GB
(dynamic only)
Speed when Cache Exhausted: approx. 2800 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

Controller:

This controller features a Quad-core Cortex-R8 running at 1.25GHz as primary cores, while having a Cortex-M0 as a secondary core for peripheral.

NAND Die:

Lower Deck: 81 - Strings
Upper Deck: 81 - Strings

Nov 26th, 2024 14:54 EST change timezone

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