Capacity: | 7.5 TB (7680 GB) |
---|---|
Variants: | 1.9 TB 3.8 TB 7.5 TB |
Overprovisioning: | 1039.4 GB / 14.5 % |
Production: | Active |
Released: | 2020 |
Part Number: | HFS7T6GDUFEH-A430A |
Market: | Enterprise |
Form Factor: | U.2 |
---|---|
Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.3 |
Power Draw: |
3.7 W (Idle) 10.0 W (Avg) 14.0 W (Max) |
Manufacturer: | SK Hynix |
---|---|
Name: | SH58800GG |
Architecture: | ARM ? |
Foundry: | TSMC |
Process: | 28 nm |
Flash Channels: | 8 @ 800 MT/s |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | SK Hynix |
---|---|
Name: | V4 |
Part Number: | H25QFTMG4A9R-BDH |
Type: | TLC |
Technology: | 72-layer |
Speed: | 800 MT/s |
Capacity: | 8 chips @ 8 Tbit |
Toggle: | 3.0 |
Topology: | Charge Trap |
Dies per Chip: | 16 dies @ 512 Gbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Word Lines: |
82 per NAND String
87.8% Vertical Efficiency |
Page Size: | 16 KB |
Type: | DDR4-2666 CL19 |
---|---|
Name: | SK Hynix H5ANAG8NCMR-VKC |
Capacity: |
8192 MB
(4x 2048 MB) |
Organization: | 16Gx16 |
Sequential Read: | 3,200 MB/s |
---|---|
Sequential Write: | 2,450 MB/s |
Random Read: | 610,000 IOPS |
Random Write: | 70,000 IOPS |
Endurance: | 14016 TBW |
Warranty: | 5 Years |
MTBF: | 2.0 Million Hours |
Drive Writes Per Day (DWPD): | 1.0 |
Write Cache: | N/A |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | Yes |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
NAND Die:This die is divided into 2 decks of 82 gate layers. |