Capacity: | 1 TB (1024 GB) |
---|---|
Variants: | 1 TB 2 TB |
Overprovisioning: | 70.3 GB / 7.4 % |
Production: | Active |
Released: | Apr 26th, 2023 |
Price at Launch: | 76 USD |
Part Number: | TM5FF3001T0C101 |
Market: | Consumer |
Form Factor: | M.2 2230 (Single-Sided) |
---|---|
Interface: | PCIe 4.0 x4 |
Protocol: | NVMe 1.4 |
Power Draw: |
1.4 W (Idle) 2.4 W (Avg) 3.1 W (Max) |
Manufacturer: | Phison |
---|---|
Name: | PS5021-E21T |
Architecture: | ARM 32-bit Cortex-R5 |
Core Count: | Triple-Core |
Frequency: | 1,000 MHz |
Foundry: | TSMC |
Process: | 12 nm |
Flash Channels: | 4 @ 1,600 MT/s |
Chip Enables: | 4 |
Controller Features: |
HMB
(enabled)
|
Manufacturer: | Micron |
---|---|
Name: | N48R MediaFlash |
Part Number: | ICBIG96AZA |
Type: | QLC |
Technology: | 176-layer |
Speed: | 1600 MT/s |
Capacity: | 1 chip @ 8 Tbit |
ONFI: | 4.2 |
Topology: | Replacement Gate |
Die Size: | 69 mm² (14.8 Gbit/mm²) |
Dies per Chip: | 8 dies @ 1 Tbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Word Lines: |
195 per NAND String
90.3% Vertical Efficiency |
Read Time (tR): | 109 µs |
Program Time (tProg): | 2339 µs |
Block Erase Time (tBERS): | 7.5 ms |
Die Read Speed: | 587 MB/s |
Die Write Speed: | 27 MB/s |
Endurance: (up to) |
900 P/E Cycles
(60000 in SLC Mode) |
Page Size: | 16 KB |
Block Size: | 2816 Pages |
Plane Size: | 817 Blocks |
Type: | None |
---|---|
Host-Memory-Buffer (HMB): | 64 MB |
Sequential Read: | 5,000 MB/s |
---|---|
Sequential Write: | 3,500 MB/s |
Random Read: | 480,000 IOPS |
Random Write: | 500,000 IOPS |
Endurance: | 250 TBW |
Warranty: | 5 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.1 |
SLC Write Cache: |
approx. 231 GB
(dynamic only) |
Cache Folding Speed: | 122 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
Controller:1 main core using Cortex-R5 with CoXProcessor technology running at 980 ~ 1000 MHz (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficiency NAND Die:Read Time (tR): 109 µs ~ 121 µs |