Capacity: | 4 TB (4096 GB) |
---|---|
Variants: | 1 TB 2 TB 4 TB |
Overprovisioning: | 281.3 GB / 7.4 % |
Production: | Active |
Released: | Oct 26th, 2022 |
Part Number: | TS4TMTE250S |
Market: | Consumer |
Form Factor: | M.2 2280 (Double-Sided) |
---|---|
Interface: | PCIe 4.0 x4 |
Protocol: | NVMe 1.4 |
Power Draw: | Unknown |
Manufacturer: | Silicon Motion |
---|---|
Name: | SM2264F |
Architecture: | ARM 32-bit Cortex-R8 |
Core Count: | Quad-Core |
Frequency: | 700 MHz |
Foundry: | TSMC |
Process: | 12 nm |
Flash Channels: | 8 @ 1,600 MT/s |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Kioxia |
---|---|
Name: | BiCS5 |
Type: | TLC |
Technology: | 112-layer |
Speed: | 1200 MT/s |
Capacity: | 4 chips @ 8 Tbit |
Toggle: | 4.0 |
Topology: | Charge Trap |
Dies per Chip: | 8 dies @ 1 Tbit |
Planes per Die: | 2 |
Word Lines: |
128 per NAND String
87.5% Vertical Efficiency |
Read Time (tR): | 56 µs |
Endurance: (up to) |
3000 P/E Cycles
(100000 in SLC Mode) |
Page Size: | 16 KB |
Block Size: | 1344 Pages |
Type: | DDR4-3200 CL22 |
---|---|
Name: | SAMSUNG K4A8G165WC-BCWE (C-die) |
Capacity: |
2048 MB
(2x 1024 MB) |
Organization: | 8Gx16 |
Sequential Read: | 7,500 MB/s |
---|---|
Sequential Write: | 6,700 MB/s |
Random Read: | 540,000 IOPS |
Random Write: | 440,000 IOPS |
Endurance: | 3120 TBW |
Warranty: | 5 Years |
MTBF: | 3.0 Million Hours |
Drive Writes Per Day (DWPD): | 0.4 |
SLC Write Cache: | Yes |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
Controller:Clock confirmed by SMI NAND Die:Typ. Endurance: 1700 ~ 3000 P.E.C. |