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Western Digital SN350 960 GB (TLC)

960 GB
Capacity
WD 20-82-01008
Controller
TLC
Flash
PCIe 3.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

SSD Controller
Controller
NAND Die
NAND Die
The Western Digital SN350 is a solid-state drive in the M.2 2280 form factor, launched on February 15th, 2021. It is available in capacities ranging from 240 GB to 960 GB. This page reports specifications for the 960 GB variant. With the rest of the system, the Western Digital SN350 interfaces using a PCI-Express 3.0 x4 connection. The SSD controller is the 20-82-01008-A2 Polaris MP16 from WD, a DRAM cache is not available. Western Digital has installed 96-layer TLC NAND flash on the SN350, the flash chips are made by Toshiba. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The SN350 is rated for sequential read speeds of up to 2,400 MB/s and 1,900 MB/s write; random IO reaches 340K IOPS for read and 380K for writes.
At its launch, the SSD was priced at 44 USD. The warranty length is set to three years, which is above average, but shorter than the five years offered by many other vendors. Western Digital guarantees an endurance rating of 80 TBW, a very low value compared to other SSDs.

Solid-State-Drive

Capacity: 960 GB
Variants: 240 GB 480 GB 960 GB
Hardware Versions:
Overprovisioning: 129.9 GB / 14.5 %
Production: Active
Released: Feb 15th, 2021
Price at Launch: 44 USD
Part Number: WDS960G2G0C
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 3.0 x4
Protocol: NVMe 1.3
Power Draw: 0.11 W (Idle)
Unknown (Avg)
3.5 W (Max)

Controller

Manufacturer: WD
Name: 20-82-01008-A2 Polaris MP16
Architecture: ARM 32-bit Cortex-R
Core Count: Triple-Core
Foundry: TSMC FinFET
Process: 16 nm
Flash Channels: 4 @ 1,200 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 1 chip @ 8 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 2,400 MB/s
Sequential Write: 1,900 MB/s
Random Read: 340,000 IOPS
Random Write: 380,000 IOPS
Endurance: 80 TBW
Warranty: 3 Years
MTBF: 1.0 Million Hours
Drive Writes Per Day (DWPD): 0.1
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Nov 12th, 2024 15:14 EST change timezone

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