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XPG Gammix S60 512 GB

512 GB
Capacity
Phison E21T
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
PCB Front
PCB Front
Flash
Flash
SSD Controller
Controller
NAND Die
NAND Die
The XPG Gammix S60 is a solid-state drive in the M.2 2280 form factor, launched in 2024. It is available in capacities ranging from 512 GB to 2 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the XPG Gammix S60 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5021-E21T from Phison, a DRAM cache is not available. XPG has installed 176-layer TLC NAND flash on the Gammix S60, the flash chips are made by SK Hynix. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 50 GB, once it is full, writes complete at 750 MB/s. Copying data out of the SLC cache (folding) completes at 450 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The Gammix S60 is rated for sequential read speeds of up to 4,700 MB/s and 1,700 MB/s write.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. XPG guarantees an endurance rating of 110 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 512 GB
Variants: 512 GB 1 TB 2 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: 2024
Part Number: AGAMMIXS60-512G-CS
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: Phison
Name: PS5021-E21T
Architecture: ARM 32-bit Cortex-R5
Core Count: Triple-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 4 @ 1,600 MT/s
Chip Enables: 4
Controller Features: HMB (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V7
Part Number: H7BG95AXA
Type: TLC
Technology: 176-layer
Speed: 1600 MT/s
Capacity: 2 chips @ 2 Tbit
Toggle: 5.0
Topology: Charge Trap
Die Size: 47 mm²
(10.9 Gbit/mm²)
Dies per Chip: 4 dies @ 512 Gbit
Planes per Die: 4
Word Lines: 196 per NAND String
89.8% Vertical Efficiency
Read Time (tR): 50 µs
Program Time (tProg): 380 µs
Die Read Speed: 1280 MB/s
Die Write Speed: 168 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4224 Pages
Plane Size: 1084 Blocks

DRAM Cache

Type: None
Host-Memory-Buffer (HMB): 64 MB

Performance

Sequential Read: 4,700 MB/s
Sequential Write: 1,700 MB/s
Random Read: Unknown
Random Write: Unknown
Endurance: 110 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.1
SLC Write Cache: approx. 50 GB
(dynamic only)
Speed when Cache Exhausted: approx. 750 MB/s
Cache Folding Speed: 450 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

Controller:

1 main core using Cortex-R5 with CoXProcessor technology running at 980 ~ 1000 MHz (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficiency

NAND Die:

Endurance: 1.500 to 3.000 P.E.C.
tPROG withouth Overhead: ~ 380 µs (accounting for ~ 168 MB/s of throughput per die)
tPROG w/ +/- 25% Overhead: ~ 507 µs (accounting for ~ 126 MB/s of throughput per die)
NAND string : H25G9TC18488 NAND MaxPE cycles: 1500 NAND Freq : 1200 Channel number: 4 CE number : 4 Total Bank: 16 Flash Type: TLC Blocks/CE: 1084 Pages/Block: 4224 Page Size

Oct 4th, 2024 01:31 EDT change timezone

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