Samsung Electronics is engaged in stiff competition with TSMC for chip manufacturing orders for 3 nm, its first semiconductor foundry node to implement GAA-FET technology, after nearly a decade of FinFET-based nodes. SF3, a 3 nm GAA-FET node, enters mass-production later this year. Samsung is claiming wafer yields in the range of 60-70% in the development phases of the node. This number is crucial to attract customers as they base their wafer orders squarely on yields first, and cost-per-wafer next.

Samsung is trying to rebuild confidence among chip designers after the 2022 controversy over its engineering "fabricating" yield numbers to customers to win their business. Samsung also stated that with 2023-2024 being dominated by 3 nm-class nodes, namely SF3 (3GAP), and its refinement the SF3P (3GAP+), the company will begin introducing its 2 nm class nodes in 2025-2026. Samsung's current customers for its 3 nm node include unnamed HPC processor designer, and a mobile AP (application processor) designer.