A research team from the South Korean Institute for Basic Science (IBS) has developed a new method for growing 1D metallic materials less than 1 nm wide. They applied this technique to create a new structure for 2D semiconductor logic circuits, using the 1D metals as gate electrodes in very small transistors. However, creating very small transistors that can control electron movement within a few nanometers has been challenging. The size of semiconductor devices depends on the width and efficiency of the gate electrode. Current manufacturing processes can't make gate lengths below a few nanometers due to limitations in lithography. To address this, the team used the mirror twin boundary (MTB) of molybdenum disulfide, which is a 1D metal only 0.4 nm wide, as a gate electrode. The IBS team achieved the 1D MTB metallic phase by altering the crystal structure of a 2D semiconductor at the atomic level.

The International Roadmap for Devices and Systems (IRDS) predicts semiconductor technology to reach about 0.5 nm by 2037, with transistor gate lengths of 12 nm. The research team's transistor demonstrated a channel width as small as 3.9 nm, surpassing this prediction. The 1D MTB-based transistor also offers advantages in circuit performance. Unlike some current technologies (FinFETs or GAA) that face issues with parasitic capacitance in highly integrated circuits, this new transistor can minimize such problems due to its simple structure and narrow gate width.

Last week at the Intel Foundry Services Connect event, Intel unveiled its Intel 14A foundry node (1.4 nm-class), to succeed its Intel 18A and Intel 20A nodes, with mass production on this node expected to commence in 2026. It turns out that there is an even more advanced node Intel is working on, which it didn't announce last week, but which was part of an NDA presentation that the company forgot to lift. We're talking about the new Intel 10A node, a 1 nm-class silicon fabrication node that's a generation ahead of Intel 20A. The company says that it expects mass production on the node to begin toward the end of 2027. It is on the backs of these sub-2 nm class nodes, and the impending organizational changes that sees Intel Foundry Services become a more independent commercial entity, that Intel CEO Pat Gelsinger thinks that Intel will become the "TSMC of the West."

Currently, fabs that utilize EUV (extreme ultraviolet) lithography, namely the Intel 4, Intel 3, and Intel 20A; together make barely 15% of Intel's wafer volumes, with the bulk of the foundry's production focusing on the DUV based Intel 7. EUV-based nodes are expected to linearly grow till 2025, but what's interesting is that Intel doesn't see the kind of multi-year stagnation on Intel 4 and Intel 3 that it's currently experiencing with Intel 7; with wafer volumes of Intel 20A and 18A expected to exceed those of the Intel 4 and Intel 3 within 2025. By 2026, Intel expects that there will be twice as many Intel 20A/18A wafers pushed as Intel 4 and Intel 3. Although they use EUV, Intel 4 and Intel 3 are Intel's final nodes to implement FinFET transistors, as the company transitions to nanosheets with Intel 20A (which are called RibbonFETs in Intel jargon). Intel did not get into the technology behind Intel 10A. The company, along with Samsung and TSMC, demonstrated its stacked CFET transistor in 2023, which will power foundry nodes as nanosheets mature. Intel in its presentation also talked about the next wave of factory automation implemented by IFS, which sees AI-driven "cobots" (collaborative robots) replace humans for more roles in the clean room.