GLOBALFOUNDRIES today launched a new semiconductor technology developed specifically to meet the ultra-low-power requirements of the next generation of connected devices. The "22FDX" platform delivers FinFET-like performance and energy-efficiency at a cost comparable to 28 nm planar technologies, providing an optimal solution for the rapidly evolving mainstream mobile, Internet-of-Things (IoT), RF connectivity and networking markets.
While some applications require the ultimate performance of three-dimensional FinFET transistors, most wireless devices need a better balance of performance, power consumption and cost. 22FDX provides the best path for cost-sensitive applications by leveraging the industry's first 22nm two-dimensional, fully-depleted silicon-on-insulator (FD-SOI) technology. It offers industry's lowest operating voltage at 0.4 volt, enabling ultra-low dynamic power consumption, less thermal impact, and smaller end-product form-factors. The 22FDX platform delivers a 20 percent smaller die size and 10 percent fewer masks than 28nm, as well as nearly 50 percent fewer immersion lithography layers than foundry FinFET.
"The 22FDX platform enables our customers to deliver differentiated products with the best balance of power, performance and cost," said Sanjay Jha, chief executive officer of GLOBALFOUNDRIES. "In an industry first, 22FDX provides real-time system software control of transistor characteristics: the system designer can dynamically balance power, performance, and leakage. Additionally, for RF and analog integration, the platform delivers best scaling combined with highest energy efficiency."