Everspin Technologies, Inc., the world's leading developer and manufacturer of Magnetoresistive RAM (MRAM), today announced an amendment of its Spin-transfer Torque (STT-MRAM) joint development agreement (JDA) with GLOBALFOUNDRIES (GF ), the world's leading specialty foundry. Everspin and GF have been partners on 40 nm, 28 nm, and 22 nm STT-MRAM development and manufacturing processes and have now updated their agreement to set the terms for a future project on an advanced 12 nm FinFET MRAM solution. Everspin is in production of discrete STT-MRAM solutions on 40 and 28 nm, including its award winning 1 Gb DDR4 device. GF recently announced it has achieved initial production of embedded MRAM (eMRAM) on its 22FDX platform.

SMART Modular Technologies, Inc., a subsidiary of SMART Global Holdings, Inc., (NASDAQ: SGH), and a leader in specialty memory, storage and hybrid solutions including memory modules, Flash memory cards and other solid state storage products, today announced that it has begun shipping its nvNITRO Accelerator Card featuring MRAM technology. SMART has partnered with Everspin Technologies, Inc. (NASDAQ: MRAM), the world's leading developer and manufacturer of discrete and embedded magnetoresistive random access memory (MRAM), to launch the new Spin-transfer Torque MRAM (STT-MRAM)-based nvNITRO Accelerator Card. The nvNITRO is ideally suited for the most demanding transaction logging applications and, along with enhanced performance features, is designed with plug-and-play capability requiring no changes to system hardware, memory reference, bios or file systems.

MRAM technology is byte-addressable and persistent with very low latency, enabling dramatically improved system performance for many applications. The nvNITRO Accelerator Card fully exploits these unique attributes to provide a disruptive solution for industries where transaction processing and data recording performance are critical. For example, nvNITRO can reduce financial application wait times by reducing latency up to 90% over enterprise SSDs. Based on this performance data, SMART and Everspin will jointly target customers in the financial sector including joint demonstrations of nvNITRO performance at The Trading Show in Chicago, May 9-10.

Everspin Technologies today announced that Buffalo Memory is introducing a new industrial SATA III SSD that incorporates Everspin's Spin-Torque MRAM (ST-MRAM) as cache memory. In addition to breaking new ground as a SATA III SSD, this product is also the first to specify STMRAM for its cache. Buffalo Memory will showcase the new product at its booth (B-05) at the Embedded Technology 2013 conference held in Yokohama, Japan on November 20-22.

Buffalo's SS6 series SATA III SSD with Everspin ST-MRAM cache improves tolerance for sudden power loss and reduces power consumption. SATA III runs up to 6.0 Gigabits per second, twice the rate of SATA II, which improves quality of service in high data rate applications.

Everspin Technologies leads the industry in commercializing the first Spin-Torque Magnetoresistive RAM (ST-MRAM), a new type of high performance and ultra-low latency memory that is expected to transform storage architecture and help drive the continuous evolution of Moore's Law.

ST-MRAM is a performance-optimized Storage Class Memory (SCM) that bridges the role of today's conventional memory with the demands of tomorrow's storage systems by providing non-volatility, high endurance and ultra-low latency. The 64 Mb device is the first product in Everspin's ST-MRAM roadmap that is planned to scale to gigabit density memories with faster speeds. Select customers are now evaluating samples of Everspin's EMD3D064M 64 Mb DDR3 ST-MRAM.