Kioxia Corporation and Sandisk Corporation have pioneered a state-of-the-art 3D flash memory technology, setting the industry benchmark with a 4.8 Gb/s NAND interface speed, superior power efficiency, and heightened density

Unveiled at ISSCC 2025, the new 3D flash memory innovation, together with the companies' revolutionary CBA (CMOS directly Bonded to Array) technology, incorporates one of the latest interface standards, Toggle DDR6.0 for NAND flash memory, and leverages the SCA (Separate Command Address) protocol, a novel command address input method of its interface, and PI-LTT (Power Isolated Low-Tapped Termination) technology, which is instrumental in further reducing power consumption.

TrendForce's latest findings reveal that the NAND Flash market continues to be plagued by oversupply in the first quarter of 2025, leading to sustained price declines and financial strain for suppliers. However, TrendForce anticipates a significant improvement in the market's supply-demand balance in the second half of the year.

Key factors contributing to this shift include proactive production cuts by manufacturers, inventory reductions in the smartphone sector, and growing demand driven by AI and DeepSeek applications. These elements are expected to alleviate oversupply and support a price rebound for NAND Flash.

PNY Technologies today announced the latest additions to their USB Type-C flash drive lineup, headlined by the extreme-performance PRO Elite V3 that delivers read speeds up to 1,000 MB/s and write speeds up to 800 MB/s, and offers storage options ranging from 256 GB - 2 TB. The expanded Type-C portfolio also includes the ultra-compact Elite-X Fit and Elite models, providing a storage solution for all Type-C and high-performance portable needs without requiring a Type-C adapter.

Extreme Storage Solution—PRO Elite V3 Type-C
The PRO Elite V3 leads PNY's latest generation of Type-C USB storage solutions, crafted for professional content creators, designers, and gamers demanding high performance while working with large files and resource-demanding applications. With extreme read speeds up to 1,000 MB/s and write speeds up to 800 MB/s, users can safely transfer their valuable content at blazing fast speeds up to 265 times faster than standard USB 2.0 flash drives. A huge storage size increase of up to 2 TB provides professional users ample space to store large project files, 4K video collections, and extensive gaming libraries on a single storage device.

Yangtze Memory Technologies Co. has begun shipping its fifth-generation 3D NAND memory chips, featuring 294 total layers and 232 active layers, according to an analysis from TechInsights. The new chips achieve bit density near 20 Gb per square millimeter (19.8 Gb/mm²), comparable to current offerings from SK Hynix and approaching Kioxia/Western Digital's latest products. YMTC's design uses hybrid bonding to connect the memory array with logic components, suggesting that Chinese memory makers are up to speed on the packaging standards that their non-sanctioned competitors use. The company has opted for a quiet release without formal announcements, a departure from typical industry practice. This low-key approach may be related to ongoing US trade restrictions on Chinese semiconductor companies.

While not setting records for active layers, SK Hynix's upcoming 321-layer chip leads in that metric, and YMTC's achievement in total layer count demonstrates continued technical progress. The chip uses string stacking technology, though the specific configuration of the layer arrays remains unclear. Other specifications show the new chip employs YMTC's Xtacking 4.0 architecture and triple-level cell (TLC) design. This matches major competitors' architecture type, though detailed performance metrics such as interface speeds have not been disclosed. The 5th generation NAND focuses on getting density on the right track. However, we expect YMTC to continue development at the same speed, match SK Hynix with 321-layer chips, and surpass it with Xtacking 5.0 in the near future.

Western Digital Corp. today reported fiscal second quarter 2025 financial results.

"As we finalize the separation of our businesses, we are confident that both Western Digital and Sandisk will continue driving innovation and providing compelling storage solutions to customers while delivering long-term shareholder value," said David Goeckeler, Western Digital CEO. "We expect that our strong performance in HDD and our strategic approach to managing our Flash business within the New Era of NAND will allow each company to capture the growing demand for storage driven by the AI Data Cycle."

TrendForce's latest research report highlights that the NAND Flash industry will continue to face dual pressure from weak demand and oversupply in 2025. In response, manufacturers including Micron, Kioxia/SanDisk, Samsung, and SK hynix/Solidigm have similar plans to cut production—a move that could accelerate industry consolidation in the long term.

TrendForce reports that NAND Flash manufacturers are primarily implementing production cuts by lowering utilization rates and delaying process upgrades. These actions are driven by three major factors:

Silicon Motion will expand its MonTitan lineup of SSD controllers—for datacenters and enterprise platforms—with the upcoming addition of a truly next-generation model. Wallace C. Kou (the company's founder and CEO) contributes to ChinaFlashMarket.com with a regular written column—his latest feature (posted on January 17) includes a short sentence dedicated to announcing his firm's new SM8466 design. This appears to be their first foray into PCIe 6.0-based interface territories—details are minimal (at this point in time), but the CEO divulged the very basics. Silicon Motion's engineering team is currently in the "development stage" with the SM8466 project—a: "4 nm PCIe Gen 6 SSD master chip."

It is not clear whether this next-gen PCIe 6.0 SSD controller will be heading to market anytime soon, but Kou's column mostly focused on current plans—likely signalling where priorities lie. Silicon Motion's "built-in PCIe Gen 5 SSD enterprise-level master chip" (SM8366) is in mass production—industry experts believe that the company's MonTitan PCIe 5.0 family has had a tough time keeping up with equivalent Phison products—in particular, the market leading PS5026-E26 (PCIe 5.0 x4) controller. The SM8366 could be potent enough to take the crown in higher-end enterprise segments, but the existence of a PCIe 6.0-based successor is bound to attract extra attention.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD220G: Universal Flash Storage 4.1. In addition, an update to the complementary JESD223F UFS Host Controller Interface (UFSHCI) version 4.1 standard has also been published. Developed for mobile applications and computing systems requiring high performance with low power consumption, UFS 4.1 offers faster data access and improved performance over the earlier version of the standard while maintaining hardware compatibility to UFS 4.0. Both standards are available for download from the JEDEC website.

"JEDEC members are continually innovating to shape the standards that will drive the next generation of mobile devices and advanced applications, and the committee's dedication to ongoing improvements to the UFS series is paving the way for future innovation," said Mian Quddus, Chairman of the JEDEC Board of Directors and the JC-64 Committee for Embedded Memory Storage and Removable Memory Cards.

An SSD from Chinese manufacturer Zhitai has demonstrated impressive performance metrics, reaching sequential read speeds of up to 14.5 GB/s. Under the hood, the TiPro9000 2 TB SSD combines domestic YMTC 5th Generation 3D TLC NAND technology with Silicon Motion's SM2508 controller. The drive's architecture features a 2 GB LPDDR4X DRAM chip and two 3D TLC NAND dies utilizing 232-layer YMTC's Xtacking 4.0 architecture. While initial testing revealed peak sequential read and write speeds of 14,527 MB/s and 13,869 MB/s respectively, these rates are sustained through the SLC cache for approximately 24 seconds. Performance testing showed distinct operational phases. After the initial burst speed period, transfer rates stabilize at around 4,000 MB/s for 325 seconds before dropping to 1,700-1,800 MB/s. The drive then demonstrates recovery capabilities, returning to 4,000 MB/s after 259 seconds.

Random performance specifications are equally impressive, with the manufacturer claiming up to 2 million IOPS for reads and 1.6 million IOPS for writes. The TiPro9000's performance metrics position it competitively among top-tier PCIe 5.0 x4 drives. This shows the capabilities of Chinese-manufactured YMTC NAND memory technology paired with Silicon Motion's controller expertise, putting a lot of faith in China-made NAND Flash. With growing needs for AI and big data applications, performant storage systems are becoming key to many systems. However, Chinese companies still need a solid (pun intended) controller to compete with Western technology to complete storage manufacturing. Alibaba is working on a RISC-V-based controller, while InnoGrit has also been sampling controllers. We have yet to see commercial applications based on these two.

Sandisk Corporation today previewed its new corporate branding and creative direction, signaling a bold debut of the company's comeback launch as a standalone Flash and memory technology innovator, planned for early 2025.

Defined by a 'Mindset of Motion', Sandisk's new creative direction represents a future forward philosophy where by creating paths and possibilities for people to go without limits, the company unites the current moment and their aspirations. This mindset brings people closer to their ambitions and creates a circle of collaboration for progress and future growth.

Western Digital announced it has released several new Flash storage solutions to help pros and consumers get ready for the holidays. Whether looking for the perfect gift, or planning a new venture in the New Year, the innovative products from its award-winning SanDisk and WD_BLACK brands reach new levels of speed, reliability, and capacity, serving a diverse set of digital storage needs.

High Performance, Super Capacity Portable SSDs
The expanded SanDisk portfolio of portable SSDs includes two offerings that feature next-generation SSD speeds and help defy the limits of durability. The new drives are perfect for pros or creators and anyone else who needs to store large amounts of data on the go in the toughest of climates.

PNY announced today the newest additions to its Flash Drive assortment, the PRO Elite V3 USB 3.2 Gen 2 and Attaché X USB 3.2 Flash Drives. PRO Elite V3 USB 3.2 Gen 2 Flash Drives advance file management to the next level, boasting extreme speeds of up to 1,000 MB/s read and up to 800 MB/s write, with storage capacities ranging from 256 GB - 1 TB, while the Attaché X brings a sleek and modern design with boosted performance for mainstream users

Exceptional Performance Storage Solution
PNY's new PRO Elite V3 brings a new level of speed and reliability to its high-performance USB product assortment. Exceptional performance improvements boost maximum speeds up to 1,000 MB/s read and up to 800 MB/s write, achieving speeds 265x faster than standard USB 2.0 flash drives. Experience the elevated performance of the PRO Elite V3's USB 3.2 Gen 2 flash drive technology to enhance workflows with demanding applications. PRO Elite V3 was designed to be an invaluable asset for content creators, professionals, designers, and gamers who need to store, access, and transfer critical, high-density files such as movies, professional high-resolution photos, video gaming data, and full HD & 4K videos at incredible speeds.

KIOXIA America, Inc. today announced that it has begun mass production of the industry's first Universal Flash Storage (UFS) Ver. 4.0 embedded flash memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology.

QLC UFS offers a higher bit density than traditional TLC UFS, making it suitable for mobile applications that require higher storage capacities. Advancements in controller technology and error correction have enabled QLC technology to achieve this while maintaining competitive performance. KIOXIA's new 512 gigabyte (GB) QLC UFS achieves sequential read speeds of up to 4,200 megabytes per second (MB/s) and sequential write speeds of up to 3,200 MB/s, taking full advantage of the UFS 4.0 interface speed.

TrendForce's latest investigations reveal that the combined market share of the top five SSD module makers in the retail sector has surged from 59% in 2022 to 72% in 2023, reinforcing a trend of larger companies expanding their dominance. These major players are leveraging their scale to negotiate more favorable prices for NAND Flash, boosting their competitive edge and ensuring they have sufficient resources to stock up in preparation for market shifts.

TrendForce reports that shipments of branded SSDs in the retail market reached 180 million units in 2023, marking a YoY growth of 3.7%. Reflecting on the SSD market for that year, it appeared that many PCs purchased during the pandemic had entered their typical replacement cycle.

Western Digital Corp. today announced that its PCIe Gen 5 DC SN861 E.1S enterprise-class NVMe SSDs have been certified to support the NVIDIA GB200 NVL72 rack-scale system.

The rapid rise of AI, ML, and large language models (LLMs) is creating a challenge for companies with two opposing forces. Data generation and consumption are accelerating, while organizations face pressure to quickly derive value from this data. Performance, scalability, and efficiency are essential for AI technology stacks as storage demands rise. Certified to be compatible with the GB200 NVL72 system, Western Digital's enterprise SSD addresses the growing needs of the AI market for high-speed accelerated computing combined with low latency to serve compute-intensive AI environments.

Samsung Electronics, the world leader in advanced memory technology, today announced it has begun mass production of its one-terabit (Tb) quad-level cell (QLC) 9th-generation vertical NAND (V-NAND).

With the industry's first mass production of QLC 9th-generation V-NAND, following the industry's first triple-level cell (TLC) 9th-generation V-NAND production in April this year, Samsung is solidifying its leadership in the high-capacity, high-performance NAND flash market.

TrendForce reports that NAND Flash prices continued to rise in 2Q24 as server inventory adjustments neared completion and AI spurred demand for high-capacity storage products. However, high inventory levels among PC and smartphone buyers led to a 1% QoQ decline in NAND Flash bit shipments. Despite this, ASP increased by 15% and drove total revenue to US$16.796 billion, a 14.2% growth compared to the previous quarter.

All NAND Flash suppliers returned to profitability starting in the second quarter and are expanding capacity in the third quarter to meet strong demand from AI and server markets. However, weaker-than-expected PC and smartphone sales in the first half of the year are likely to constrain NAND Flash shipment growth.

Polish computer memory brand Goodram is launching a new external SSD called the HX200. Thanks to its parameters, the drive will interest a wide range of users, from mobile professionals to gadget lovers and those who store gigabytes of data in the form of photos, videos and documents.

With its unique colour, the drive will appeal to female users who appreciate style and elegance in their daily use of technology. The launch of the HX200 is manufacturer's next step towards providing innovative solutions combining functionality and aesthetics.

TrendForce reports that memory module makers have been aggressively increasing their DRAM inventories since 3Q23, with inventory levels rising to 11-17 weeks by 2Q24. However, demand for consumer electronics has not rebounded as expected. For instance, smartphone inventories in China have reached excessive levels, and notebook purchases have been delayed as consumers await new AI-powered PCs, leading to continued market contraction.

This has led to a weakening in spot prices for memory products primarily used in consumer electronics, with Q2 prices dropping over 30% compared to Q1. Although spot prices remained disconnected from contract prices through August, this divergence may signal potential future trends for contract pricing.

TrendForce's latest report on enterprise SSDs reveals that a surge in demand for AI has led AI server customers to significantly increase their orders for enterprise SSDs over the past two quarters. Upstream suppliers have been accelerating process upgrades and planning for 2YY products—slated to enter mass production in 2025—in order to meet the growing demand for SSDs in AI applications.

TrendForce observes that increased orders for enterprise SSDs from AI server customers have resulted in contract prices for this category rising by over 80% from 4Q23 to 3Q24. SSDs play a crucial role in AI development. In AI model training, SSDs primarily store model parameters, including evolving weights and deviations.

Kioxia Corporation, a world leader in memory solutions, today announced that the building construction of Fab2 (K2) of its industry-leading Kitakami Plant was completed in July. K2 is the second flash memory manufacturing facility at the Kitakami Plant in the Iwate Prefecture of Japan. As demand is recovering, the company will gradually make capital investments while closely monitoring flash memory market trends. Kioxia plans to start operation at K2 in the fall of Calendar Year 2025.

In addition, some administration and engineering departments will move into a new administration building located adjacent to K2 beginning in November 2024 to oversee the operation of K2. A portion of investment for K2 will be subsidized by the Japanese government according to the plan approved in February 2024.

Kioxia Corporation, a world leader in memory solutions, today announced that it started sample shipments of 2 Tb (Tera bit) Quad-Level-Cell (QLC) memory devices with its eighth-generation BiCS FLASH 3D flash memory technology. This 2 Tb QLC device has the highest capacity in the industry, elevating storage devices to a new capacity point that will drive growth in multiple application segments including AI.

With its latest BiCS FLASH technology, Kioxia has achieved both vertical and lateral scaling of memory die through proprietary processes and innovative architectures. In addition, the company has implemented the groundbreaking CBA (CMOS directly Bonded to Array) technology, which enables the creation of higher density devices and an industry-leading interface speed of 3.6 Gbps. Together, these advanced technologies are applied in the creation of 2 Tb QLC, resulting in the industry's highest capacity memory device.

TrendForce reports that while the enterprise sector continues to invest in server infrastructure—especially with the rising adoption of AI driving demand for enterprise SSDs—the consumer electronics market remains lackluster. This, combined with NAND suppliers aggressively ramping up production in the second half of the year, is expected to push the NAND Flash sufficiency ratio up to 2.3% in the third quarter, curbing the blended price hike to a modest 5-10%.

This year, NAND Flash prices saw a robust rebound as manufacturers kept production in check during the first half, helping them regain profitability. However, with a noticeable ramp-up in production and sluggish retail demand, wafer spot prices have dropped significantly. Some wafer prices are now over 20% below contract prices, casting doubts on the sustainability of future price hikes.

The Samsung Electronics Union is reportedly planning to strike on June 7, TrendForce reports that this strike will not impact DRAM and NAND Flash production, nor will it cause any shipment shortages. Additionally, the spot prices for DRAM and NAND Flash had been declining prior to the strike announcement, and there has been no change in this downtrend since the announcement.

Samsung's global share of DRAM and NAND Flash output in 2023 was 46.8% and 32.4%, respectively. Even though the South Korean plants account for all 46.8% of global DRAM production and about 17.8% of global NAND Flash production, TrendForce identifies four reasons why this strike will not impact production. Firstly, the strike involves employees at Samsung's headquarters in Seocho, Seoul, where union participation in higher, but these employees do not directly engage in production. Secondly, this strike is planned for only one day, which falls within the flexible scheduling range for production.

TrendForce reports that adoption of enterprise SSDs by AI servers began in February, which subsequently led to large orders. Additionally, PC and smartphone customers have been increasing their inventory levels to manage rising prices. This trend drove up NAND Flash prices and shipment levels in 1Q24 and boosted quarterly revenue by 28.1% to US$14.71 billion.

There were significant changes in market rankings this quarter, with Micron overtaking Western Digital to claim the fourth spot. Micron benefited from slightly lower prices and shipments than its competitors in 4Q23, resulting in a 51.2% QoQ revenue growth to $1.72 billion in 1Q24—the highest among its peers.