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More than mere modes of transportation, today's software-defined vehicles are a result of the ongoing transformation of the automobile from a product that is mainly hardware-based to a software-centric device on wheels. Premium vehicles today can have up to 150 million lines of software code, distributed among hundreds of electronic control units (ECUs), sensors, cameras, Lidar and more.

It is critical for automotive OEMs to ensure the quality and reliability of these software-intensive systems. Automotive SPICE (Software Process Improvement and Capability dEtermination) is an industry-standard guideline for evaluating the automotive embedded software development process. This ISO/IEC 15504 standard proves the software and development capabilities of automotive suppliers and manufacturers meet OEM requirements and incorporate best practices throughout the automotive software development cycle.

Solid State Disks Ltd. (SSDL), a leading manufacturer of solid-state-drives (SSDs) and a value-added reseller (VAR) of latest-technology Flash and DRAM solutions, has launched SCSIFlash-Fast, a swap-in upgrade/replacement for electromechanical hard disk drives (HDDs) that use the SCSI interface. Initially available with 68- and 80-pin connectors and write speeds of up to 80 MB/s, SCSIFlash-Fast uses proven SCSI drive architecture and industrial CFast or M.2 SSD memory (with storage capacities ranging from 2 GB to 1 TB). The drive features configurable hardware, allowing the OEMs of (or those responsible for maintaining) legacy systems to replace or upgrade obsolete HDDs that were made in the 1980s, 1990s and early 2000s, and improve system reliability and security.

James Hilken, SSDL's Sales & Marketing Director, says: "There are several computer-based systems in use within aerospace, defense, manufacturing, medical, telecommunications and other sectors that were designed decades ago and were fitted with then state-of-the-art SCSI hard disk drives. With their moving parts, these long-obsolete drives are increasingly failing. Our SCSIFlash-Fast drive is a highly reliable swap-in replacement for virtually any SCSI hard disk drive that's more than 20 years old." SCSIFlash-Fast is configured to order and can replicate the exact behavior of the SCSI HDD it replaces, meaning no modifications need to be made to the host system; which in many cases must not be modified (i.e. its functionality has been certified) or it is simply not cost-effective to do so. With SSDL's SCSIFlash-Fast, the SCSI version is set to that of the host system (SASI, SCSI-1, SCSI-2 or Ultra3) and the disk sector size is set to 256, 512, 768, 1024, 2048 or 4096. Other configurations can also be applied, including the preloading of data.

Western Digital Corp. today reported fiscal second quarter 2024 financial results. "Western Digital's second quarter results demonstrate that the structural changes we have put in place over the last few years and the strategy we have been executing are producing significant outperformance across our flash and HDD businesses," said David Goeckeler, Western Digital CEO. "We are seeing our efforts come to fruition as our financial performance met, or exceeded, the non-GAAP guidance ranges we provided in October, and I am confident that our strategy of managing inventory proactively, offering a broad range of products, closely controlling our product cost through focused R&D and manufacturing, and bolstering the agility of our business will allow us to improve through-cycle profitability and dampen business cycles into the future."

• Second quarter revenue was $3.03 billion, up 10% sequentially (QoQ). Cloud revenue increased 23% (QoQ), Client revenue decreased 2% (QoQ) and Consumer revenue increased 15% (QoQ).
• Second quarter GAAP earnings per share (EPS) was $(0.87) and Non-GAAP EPS was $(0.69), which includes $156 million of underutilization-related charges in Flash and HDD.
• Expect fiscal third quarter 2024 revenue to be in the range of $3.20 billion to $3.40 billion.
• Expect Non-GAAP EPS in the range of $(0.10) to $0.20, which includes $30 to $40 million of underutilization-related charges in HDD.

The PC master race has yielded many interesting activities for enthusiasts alike, with perhaps the pinnacle of activities being overclocking. Usually, subjects for overclocking include CPUs, GPUs, and RAM, with other components not actually being capable of overclocking. However, the enthusiast force never seems to settle, and today, we have proof of overclocking an off-the-shelf 2.5-inch SATA III NAND Flash SSD thanks to Gabriel Ferraz, a Computer Engineering graduate, and TechPowerUp's SSD database maintainer. He uses the RZX Pro 256 GB SSD in the video, a generic NAND Flash drive. The RZX Pro uses the Silicon Motion SM2259XT2 single-core, 32-bit ARC CPU running up to 550 MHz. It has two channels at 400 MHz, each with eight chip enable interconnects, allowing up to 16 NAND Flash dies to operate. The SSD doesn't feature a DRAM cache or support a host memory buffer. It has only one NAND Flash memory chip from Kioxia, uses BiCS FLASH 4 architecture, has 96 layers, and has 256 GB capacity.

While this NAND Flash die is rated for up to 400 MHz or 800 MT/s, it only ran at less than half the speed at 193.75 MHz or 387.5 MT/s at default settings. Gabriel acquired a SATA III to USB 3.0 adapter with a JMS578 bridge chip to perform the overclock. This adapter allows hot swapping of SSDs without the need to turn off the PC. He shorted two terminals in the drive's PCB to get the SSD to operate without its default safe mode. Mass Production Tools (MPTools), which OEMs use to flash SSDs, were used to change the firmware settings. Each NAND Flash architecture has its own special version of MPTools. The software directly shows control of the Flash clock, CPU clock, and output driving. However, additional tweaks like Flash IO driving with subdivisions need modifications. Control and Flash On-Die Termination (ODT) and Schmitt window trigger (referring to the Schmitt trigger comparator circuit) also needed a few modifications to make it work.

TrendForce's latest analysis reveals that the downswing of DRAM contract prices, which had lasted for eight consecutive quarters since 4Q21, was finally reversed in 4Q23. Likewise, NAND Flash rebounded in 3Q23 after four quarters of decline. The persistence of this rally in memory prices during 2024 will largely hinge on suppliers' ongoing and effective control over their capacity utilization rates.

According to TrendForce Senior Research Vice President, Avril Wu, the first quarter of this year is already shaping up to be a season of growth, with TrendForce confirming its initial projections: a hike of around 13-18% QoQ for DRAM contract prices and a hike of 18-23% for NAND Flash contract prices. Despite a generally conservative outlook for overall market demand in 2Q24, suppliers in both DRAM and NAND Flash markets have begun raising their capacity utilization rates since the end of 4Q23. Furthermore, NAND Flash buyers are anticipated to complete their inventory restocking in advance in 1Q24. Due to the rise in capacity utilization rates and earlier restocking efforts, leading to a more moderated QoQ price increase of 3-8% for both DRAM and NAND Flash contract prices for 2Q24.

Apple has been experimenting with Large Language Models (LLMs) that power most of today's AI applications. The company wants these LLMs to serve the users best and deliver them efficiently, which is a difficult task as they require a lot of resources, including compute and memory. Traditionally, LLMs have required AI accelerators in combination with large DRAM capacity to store model weights. However, Apple has published a paper that aims to bring LLMs to devices with limited memory capacity. By storing LLMs on NAND flash memory (regular storage), the method involves constructing an inference cost model that harmonizes with the flash memory behavior, guiding optimization in two critical areas: reducing the volume of data transferred from flash and reading data in larger, more contiguous chunks. Instead of storing the model weights on DRAM, Apple wants to utilize flash memory to store weights and only pull them on-demand to DRAM once it is needed.

Two principal techniques are introduced within this flash memory-informed framework: "windowing" and "row-column bundling." These methods collectively enable running models up to twice the size of the available DRAM, with a 4-5x and 20-25x increase in inference speed compared to native loading approaches on CPU and GPU, respectively. Integrating sparsity awareness, context-adaptive loading, and a hardware-oriented design pave the way for practical inference of LLMs on devices with limited memory, such as SoCs with 8/16/32 GB of available DRAM. Especially with DRAM prices outweighing NAND Flash, setups such as smartphone configurations could easily store and inference LLMs with multi-billion parameters, even if the DRAM available isn't sufficient. For a more technical deep dive, read the paper on arXiv here.

Phison Electronics Corp., a global leader in NAND flash controller and storage solutions, today announced the company's predictions for 2024 trends in NAND flash infrastructure deployment. The company predicts that rapid proliferation of artificial intelligence (AI) technologies will continue apace, with PCIe 5.0-based infrastructure providing high-performance, sustainable support for AI workload consistency as adoption rapidly expands. PCIe 5.0 NAND flash solutions will be at the core of a well-balanced hardware ecosystem, with private AI deployments such as on-premise large language models (LLMs) driving significant growth in both everyday AI and the infrastructure required to support it.

"We are moving past initial excitement over AI toward wider everyday deployment of the technology. In these configurations, high-quality AI output must be achieved by infrastructure designed to be secure, while also being affordable. The organizations that leverage AI to boost productivity will be incredibly successful," said Sebastien Jean, CTO, Phison US. "Building on the widespread proliferation of AI applications, infrastructure providers will be responsible for making certain that AI models do not run up against the limitations of memory - and NAND flash will become central to how we configure data center architectures to support today's developing AI market while laying the foundation for success in our fast-evolving digital future."

TrendForce predicts a significant rise in mobile DRAM and NAND Flash (eMMC/UFS) prices for the first quarter of 2024, with an expected seasonal increase of 18-23%. This surge could be further amplified in a market dominated by a few major players or if brand clients resort to panic buying under pressure.

Observations for 1Q24 indicate steady production planning by Chinese smartphone OEMs. A clear rise in memory prices is driving buyers to actively increase their purchasing efforts as they aim to establish secure and competitively priced inventory levels.

TrendForce reports a pivotal shift in the NAND Flash market for 3Q23, primarily driven by Samsung's strategic decision to reduce production. Initially, the market was clouded by uncertainty regarding end-user demand and fears of a subdued peak season, prompting buyers to adopt a conservative approach with low inventory and slow procurement. However, as market leaders like Samsung implemented substantial production cuts, buyers' attitudes shifted toward a more aggressive procurement strategy in anticipation of a market supply decrease. This led to a stabilization and even an uptick in NAND Flash contract prices by quarter-end, driving a 3% QoQ increase in bit shipments and culminating in a total revenue of US$9.229 billion, marking an approximate 2.9% increase.

The story unfolds with Kioxia and Micron—the only two to witness a dip in revenue rankings this quarter—while Samsung maintained its robust performance. Despite sluggish demand in the server sector, Samsung's fortunes rebounded thanks to a boost in consumer electronics, especially with high-capacity products in PCs and smartphones. Samsung emerged from a trough in Q3, with strategic inventory replenishments fueling further strategic stocking, and a shift in operational focus toward maximizing profit. This led to a minor 1-3% decrease in shipped bits, but a 1-3% increase in ASP, stabilizing Q3 NAND Flash revenue at US$2.9 billion.

TrendForce has issued its latest findings, indicating that the global SSD market has rectified its supply and demand dynamics in 2022, following a resolution in the shortage of master control ICs that had hampered the market in 2021. Despite the normalization of supply, global SSD shipments witnessed a decline, with only 114 million units shipped in 2022—a 10.7% decrease from the prior year.

The top three SSD shipment leaders of 2022 were Kingston, ADATA, and Lexar, with Kingston and ADATA maintaining solid advantages and experiencing growth in market share over 2021. Lexar's growth was attributed to an aggressive push for revenue in anticipation of going public. Kimtigo, in 2022, made significant strides in expanding into industrial control and OEM markets, which in turn boosted its shipment volume and market share. Netac maintained its competitive edge in the SSD market alongside securing several government orders in the enterprise SSD sector, keeping its market share and ranking consistent with the previous year.

PNY announced today the newest addition to its Flash Drive assortment, the Elite-X Type-C USB 3.2 Gen 1 Flash Drives. Elite-X Type-C is small in size but big in performance and portability. Boasting up to 256 GB of storage, up to 200 MB/s read speeds and up to 100 MB/s write speeds, The Elite-X Type-C USB 3.2 Gen 1 Flash Drives allow users to quickly and easily transfer files, photos, videos, music and more. Whether you're a student or a CEO, the Elite-X Type-C ensures you'll always have access to important files and you'll never again miss capturing important content due to limited memory!

Meticulously Crafted Design
The slender design of Elite-X Type-C is tailored to fit Type-C ports without the need for an adapter. The carefully crafted, narrow housing was designed to allow the drive to be used alongside other ports, taking up minimal space and leaving ports accessible for other needs. The included sliding cover protects the Type-C connector when not in use to prevent your valuable data from damage or loss!

Western Digital Corp. (NASDAQ: WDC) ("Western Digital" or "the Company") today announced its Board of Directors has unanimously approved a plan to separate its HDD and Flash businesses. Creating two independent, public companies with market-specific, strategic focus, the company's separation will better position each franchise to execute innovative technology and product development, capitalize on unique growth opportunities, extend respective leadership positions, and operate more efficiently with distinct capital structures. The transaction also provides strategic optionality for both businesses. The separation is intended to be structured in a tax-free manner and is targeted for the second half of calendar year 2024.

"Our HDD and Flash businesses are both well positioned to capitalize on the data storage industry's significant market dynamics, and as separate companies, each will have the strategic focus and resources to pursue opportunities in their respective markets. Importantly, separating these franchises will unlock significant value for Western Digital shareholders, allowing them to participate in the upside of two industry leaders with distinct growth and investment profiles," said David Goeckeler, CEO, Western Digital. "We have already laid important groundwork by building market-leading portfolios and enhancing the operational efficiency of each business, including the creation of separate Flash and HDD product business units and separating operational capabilites over the past several years. Additionally, we now have strong product, operational, and financial leadership in place to execute this plan successfully. Each business is in a solid position to succeed on its own, and the actions we are announcing today will further enable each company to drive long-term success in the years to come."

During the China Chip Storage Future 2023 Storage Industry Trend Summit, Yingren Technology, widely recognized as InnoGrit outside of China, announced the initiation of mass production of its enterprise-level YR S900 PCIe 5.0 SSD controller. Marking a significant breakthrough, the YR S900 stands as China's first domestic PCIe 5.0 SSD controller. Operating on an open-source RISC-V architecture, the YR S900 is engineered to align with U.S. export restrictions, ensuring a seamless design and manufacturing process of the SSD controller. While Yingren Technology remains discreet about the specific process node to produce the YR S900, it's known that the controller embodies a versatile design, with compatibility extending to mainstream NAND from eminent manufacturers, and exhibits an impressive synergy with NAND from Yangtze Memory Technologies Corp (YMTC).

The YR S900 is a quad-channel controller, offering sequential read and write speeds peaking at 14 GB/s and 12 GB/s, respectively, and is equipped with InnoGrit's third-generation ECC engine to optimize 4K LDPC encoding and decoding. This collaboration with Kioxia's XL-Flash results in a low 4K random read latency of 10us, highlighting its potential to deliver higher data throughput, increased stability, and extended service life. The YR S900 encompasses a comprehensive feature set, including FDP, SR-IOV hardware virtualization, CMB, and a range of data encryption algorithms. While the mass production of the YR S900 underscores a monumental stride in SSD solutions within China, it remains to be seen whether adopting this new Chinese technology will enter markets beyond China.

KIOXIA America, Inc. today announced that it has donated a command set specification to the Linux Foundation vendor-neutral Software-Enabled FlashTM Project. Built to deliver on the promise of software-defined flash, Software-Enabled Flash technology gives storage developers control over their data placement, latency outcomes, and workload isolation requirements. Through its open API and SDKs, hyperscale environments may optimize their own flash protocols, such as flexible direct placement (FDP) or zoned namespace (ZNS), while accelerating adoption of new flash technologies. This unique combination of open source software and purpose-built hardware can help data centers maximize the value of flash memory. KIOXIA has developed working samples of hardware modules for hyperscalers, storage developers and application developers.

"We are delighted to provide command set specifications to the Software-Enabled Flash Project," said Eric Ries, senior vice president and general manager of the Memory and Storage Strategy Division for KIOXIA America, Inc. "This is an important step that allows the ecosystem to bring products to market, and enables customers to extract the maximum value from flash memory."

TrendForce's latest research paints a vivid picture: Q2 saw the NAND Flash market still grappling with lackluster demand and being significantly outpaced by supply. The ASP of NAND Flash also took a hit, tumbling 10-15%. Nevertheless, there was a silver lining as bit shipments grew by 19.9% QoQ from a low baseline in 1Q23. To sum up, the Q2 landscape of the NAND Flash sector witnessed a 7.4% QoQ growth in revenue, reaching US$9.338 billion.

From Q2, Samsung began reining in production with a further squeeze expected for the third quarter. With inventories set to thin out, price hikes loom on the horizon, possibly offering a remedy to the chronic supply-demand imbalance. Yet, a crowded supplier landscape in the NAND Flash sector means that many players, faced with hefty inventories, will likely continue aggressive sales into Q3. Forecasts suggests a deceleration in ASP decline for NAND Flash products in Q3 to 5-10%. Riding the stockpiling momentum for the high season, bit shipments are set to rise, propelling Q3 revenue growth past the 3% threshold.

ProGrade Digital, Inc., founded with a mission to provide the highest quality professional grade digital memory cards and workflow solutions, announces the 3rd generation of its CFexpress Type B Cobalt-class memory card in a new 1.3 TB capacity. This new generation features the same industry-leading quality of ProGrade current 2nd generation 325 GB and 650 GB capacity cards, but now leverages PCIe Gen 4 interconnect with NVMe 1.4c host controller interface. ProGrade Digital's 3rd generation CFexpress Cobalt cards are fully compliant with the just released CFexpress 4.0 specification, and provide read speeds of up to 3,400 MB/s, burst write speeds of up to 3,000 MB/s, and sustained write speeds of up to 2,800 MB/s - ideally suited for the highest-resolution cinema-grade video capture applications. As in past Cobalt-class memory card generations, the highest endurance and reliability memory technology is utilized - ensuring years of trouble-free, high-performance capture.

"The introduction of our 3rd generation CFexpress Cobalt card at the 1.3 TB capacity point provides the extra space and unparalleled performance needed for the very highest resolution video capture needs," said Wes Brewer, Founder and CEO of ProGrade Digital. "Our inclusion of PCIe Gen 4 controller technology, coupled with upcoming USB4 high-speed readers will allow offloading speeds 3x greater than previously possible, providing a dramatic reduction in workflow processing time."

Kingston Digital, Inc., the Flash memory affiliate of Kingston Technology Company, Inc., a world leader in memory products and technology solutions, launched today the Best-in-Class Kingston IronKey D500S, hardware-encrypted USB flash drive providing military-grade security for classified data in transit. The D500S is FIPS 140-3 Level 3 (Pending) certified with new enhancements from NIST requiring secure microprocessor upgrades for stronger security and attack protections for government and military use. The drive self-tests upon bootup and includes thermal and voltage protection to automatically shut down when certain threshold is reached. Waterproof{{Footnote.N47812}, dustproof, shock and vibration resistant to Military Standards, crush-resistant and epoxy-filled, D500S' rugged zinc casing protects internal components from penetration attacks.

The Multi-Password option with Complex or Passphrase mode allows users to take ownership over their data, making it easier to remember the password to unlock the stringent security. Admin can reset a User password and enable a One-Time Recovery password to restore access should User password be forgotten. Both Admin and User can set a session-based Read-Only mode to protect the drive from malware on untrusted systems, while Admin can also set a Global Read-Only mode until reset. To keep data from getting into the wrong hands, Admin can enter a Crypto-Erase password that will destroy the data and reset the drive to prevent unauthorized access in compromising situations.

Recently, the spot market for NAND Flash chips has seen a rise in active price inquiries for certain products, a movement driven by successful increases in wafer contract prices. TrendForce reports this uptick primarily stems from negotiations in late August between NAND Flash suppliers and key Chinese module makers. These discussions led to a new wafer contract that successfully boosted the price of 512 Gb wafers by approximately 10%.

Other suppliers have also raised prices for their comparable products, signaling a shift in supplier sentiment: they are now less inclined to finalize deals at lower prices. This change has contributed to a short-term surge in the wafer spot market. Nevertheless, whether this surge in procurement is supported by actual end-user demand remains uncertain, as these orders have arisen in reaction to adjustments in supply-side pricing.

TrendForce expects that memory suppliers will continue their strategy of scaling back production of both DRAM and NAND Flash in 2024, with the cutback being particularly pronounced in the financially struggling NAND Flash sector. Market demand visibility for consumer electronic is projected to remain uncertain in 1H24. Additionally, capital expenditure for general-purpose servers is expected to be weakened due to competition from AI servers. Considering the low baseline set in 2023 and the current low pricing for some memory products, TrendForce anticipates YoY bit demand growth rates for DRAM and NAND Flash to be 13% and 16%, respectively. Nonetheless, achieving effective inventory reduction and restoring supply-demand balance next year will largely hinge on suppliers' ability to exercise restraint in their production capacities. If managed effectively, this could open up an opportunity for a rebound in average memory prices.

PC: The annual growth rate for average DRAM capacity is projected at approximately 12.4%, driven mainly by Intel's new Meteor Lake CPUs coming into mass production in 2024. This platform's DDR5 and LPDDR5 exclusivity will likely make DDR5 the new mainstream, surpassing DDR4 in the latter half of 2024. The growth rate in PC client SSDs will not be as robust as that of PC DRAM, with just an estimated growth of 8-10%. As consumer behavior increasingly shifts toward cloud-based solutions, the demand for laptops with large storage capacities is decreasing. Even though 1 TB models are becoming more available, 512 GB remains the predominant storage option. Furthermore, memory suppliers are maintaining price stability by significantly reducing production. Should prices hit rock bottom and subsequently rebound, PC OEMs are expected to face elevated SSD costs. This, when combined with Windows increasing its licensing fees for storage capacities at and above 1 TB, is likely to put a damper on further growth in average storage capacities.

SK hynix Inc. showcased today the sample of the 321-layer 4D NAND, making public the progress on its development of the industry's first NAND with more than 300 layers. The company gave a presentation on the progress on the development of its 321-layer 1 Tb TLC 4D NAND Flash and displayed the samples at the Flash Memory Summit (FMS) 2023 taking place Aug. 8-10 in Santa Clara.

SK hynix is the first in the industry to unveil the progress on the development of a NAND with more than 300 layers in detail. The company plans to raise the level of completion of the 321-layer product and start mass production from the first half of 2025. The company said its technological competitiveness accumulated from the success of the world's highest 238-layer NAND, already in mass production, paved the way for a smooth progress for the development of the 321-layer product. "With another breakthrough to address stacking limitations, SK hynix will open the era of NAND with more than 300 layers and lead the market."

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced its participation at Flash Memory Summit 2023, taking place in person in Santa Clara, California, on August 8-10. CEO, Andy Hsu, will deliver a keynote address titled "New Architectures which will Drive Future 3D NAND and 3D DRAM Solutions" on August 9th at 11:40 a.m. Pacific Time.

Earlier this year, Neo Semiconductor announced the launch of its ground-breaking technology, 3D X-DRAM. This development is the world's first 3D NAND-like DRAM cell array that is targeted to solve DRAM's capacity bottleneck and replace the entire 2D DRAM market. 3D X-DRAM can be manufactured using the existing 3D NAND flash memory process with minor changes, significantly reducing the time and cost spent developing a new 3D process. During the keynote, Mr. Hsu will reveal the 3D X-DRAM process flow and technical details.

Samsung Electronics, a world leader in advanced semiconductor technology, today announced that it has initiated mass production of its new automotive Universal Flash Storage (UFS) 3.1 memory solution optimized for in-vehicle infotainment (IVI) systems. The new solution offers the industry's lowest energy consumption, enabling car manufacturers to provide the best mobility experience for consumers.

The UFS 3.1 lineup will come in 128, 256 and 512-gigabyte (GB) variants to meet different needs of customers. The enhanced lineup allows more efficient battery life management to future automotive applications such as electric or autonomous vehicles. The 256 GB model, for instance, has reduced its energy consumption by about 33% compared to the previous generation product. The 256 GB model also provides a sequential write speed of 700-megabytes-per-second (MB/s) and a sequential read speed of 2,000 MB/s.

TrendForce reports that OEMs have continued making concerted efforts to scale back production. However, given that the trajectory of market demand is still unclear, it's expected that the NAND Flash market will continue to be in a state of oversupply in 3Q23. Cautious inventory management by buyers is preventing a stabilization in NAND Flash prices even with an anticipated seasonal surge in demand for 2H23. TrendForce predicts that NAND Flash wafers will be the first to see a price hike in 3Q23 as prices for module products such as SSDs, eMMCs, and UFS will likely continue to fall due to tepid downstream demand. Consequently, the overall ASP of NAND Flash is forecast to continue dropping by about 3~8% in 3Q23, though a possibility exists prices may recover in 4Q23.

Client SSD: Although notebook shipments are expected to gradually recover in 3Q23, reversing an oversupply of SSD will continue to be challenging. Furthermore, a portion of suppliers have implemented aggressive promotions to secure customer orders and hit shipping targets in light of weakened demand and less-than-satisfactory order volumes from major clients, putting pressure on other suppliers. TrendForce estimates that the ASP of client SSDs will fall by 8~13% in the third quarter.

SK hynix Inc. announced today that it has started mass production of its 238-layer 4D NAND Flash memory, following the development in August 2022, and that product compatibility test with a global smartphone manufacturer is underway. "SK hynix has developed solution products for smartphones and client SSDs which are used as PC storage devices, adopting the 238-layer NAND technology, and has moved into mass production in May," the company said. "Given that the company secured world-class competitiveness in price, performance and quality for both 238-layer NAND and the previous generation 176-layer NAND, we expect these products to drive earnings improvement in the second half of the year."

The 238-layer product - the smallest NAND in size - has a 34% higher manufacturing efficiency compared to the previous generation of 176-layer, resulting in a significant improvement in cost competitiveness. Besides, with a data-transfer speed of 2.4 Gb per second, a 50% increase from the previous generation, and approximately 20% increase in read and write speed, the company is confident that it will be able to deliver an improved performance to the smartphone and PC customers using this technology.