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Kioxia Introduces 2 Tb QLC Flash Memory with the Latest BiCS FLASH Technology
Kioxia Corporation, a world leader in memory solutions, today announced that it started sample shipments of 2 Tb (Tera bit) Quad-Level-Cell (QLC) memory devices with its eighth-generation BiCS FLASH 3D flash memory technology. This 2 Tb QLC device has the highest capacity in the industry, elevating storage devices to a new capacity point that will drive growth in multiple application segments including AI.
With its latest BiCS FLASH technology, Kioxia has achieved both vertical and lateral scaling of memory die through proprietary processes and innovative architectures. In addition, the company has implemented the groundbreaking CBA (CMOS directly Bonded to Array) technology, which enables the creation of higher density devices and an industry-leading interface speed of 3.6 Gbps. Together, these advanced technologies are applied in the creation of 2 Tb QLC, resulting in the industry's highest capacity memory device.
With its latest BiCS FLASH technology, Kioxia has achieved both vertical and lateral scaling of memory die through proprietary processes and innovative architectures. In addition, the company has implemented the groundbreaking CBA (CMOS directly Bonded to Array) technology, which enables the creation of higher density devices and an industry-leading interface speed of 3.6 Gbps. Together, these advanced technologies are applied in the creation of 2 Tb QLC, resulting in the industry's highest capacity memory device.