Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has developed a prototype sample of 96-layer BiCS FLASH, its proprietary 3D flash memory, with 4-bit-per-cell (quad level cell, QLC) technology that boosts single-chip memory capacity to the highest level yet achieved.Toshiba Memory will start to deliver samples to SSD and SSD controller manufacturers for evaluation from the beginning of September, and expects to start mass production in 2019.

The advantage of QLC technology is pushing the bit count for data per memory cell from three to four and significantly expanding capacity. The new product achieves the industry's maximum capacity of 1.33 terabits for a single chip which was jointly developed with Western Digital Corporation. This also realizes an unparalleled capacity of 2.66 terabytes with a 16-chip stacked architecture in one package. The huge volumes of data generated by mobile terminals and the like continue to increase with the spread of SNS and progress in IoT, and the need to analyze and utilize that data in real time is expected to increase dramatically. That will require even faster than HDD, larger capacity storage and QLC products using the 96-layer process will contribute a solution.

ADATA today launched the UV240 USB Flash drive, adding to its extensive range of portable storage devices. The UV240 works in USB 2.0 and is offered in capacities up to 64 GB. It features a convenient flip-cap capless design alongside a quick-slide mechanism for maximum usability.

ADATA remains committed to its USB Flash drive global leadership role and will continue releasing new models as market needs evolve. ADATA designers have long preferred USB Flash drives with no cap, as with such a design there is less clutter and fewer parts to potentially misplace. The UV240 utilizes a convenient flip-cap design, which does not only prevent you from misplacing the cap, it also allows it to be easily opened with the flick of a thumb. This intuitive design helps make the UV240 extremely satisfying to use on the go.

PATRIOT, a global leader in performance memory, SSDs, gaming peripherals, and flash storage solutions, today announced the brand new 3-in-1 USB Flash Drive, the TRINITY, a ground-breaking design of an adaptive USB Flash Drive. Users with multiple personal electronics devices such as a Smartphone, tablet, and laptop encounter a fundamental problem: "How do you move data between these devices?" Consumers have demand for multi-platform data storage and it is only effective if it can be used inexpensively and with great efficiency. Patriot Memory understands this inconvenience and has proposed an ultimate solution to consumers.

"Patriot Memory always pushes the limit when it comes to how our products can benefit the end users, that's why the TRINITY drive has been created, and its creative and unique 3-in-1 design should be second to none in the market," said Roger Shinmoto, Vice President of Product Development. The TRINITY USB Flash Drive features a USB Type-A, Type-C, and micro-B connectors all on a single USB drive housing. You don't need to use any adapter cables as this drive comes with three of the most common USB formats on a single tiny flash drive. This allows TRINITY users to store and transfer data easily between different devices without any hassle.

Kingston Digital, Inc., the Flash memory affiliate of Kingston Technology Company, Inc., a world leader in memory products and technology solutions, announced today its new series of 'Canvas' Flash memory cards. Canvas will offer three different variations in both SD and microSD cards: Select, Go, and React to suit consumers' needs.

With the Canvas line of memory cards, users and creators can choose the best storage medium available. The cards are designed to provide the reliability, flexibility and performance needed for any project. Along with tested durability, users will have the confidence to bring Canvas cards wherever their imagination takes them.

In a bid to ensure sufficient supply of NAND flash memory to meet the growing demands of not just PC, but also smartphone markets, China's Tsinghua Unigroup and Intel are in talks to license-manufacture 64-layer 3D NAND flash, based on existing IMFlash Technologies designs. IMFlash is a joint-venture between Intel and Micron Technology. Tsinghua Unigroup is one of the biggest beneficiaries of the Chinese Government's ambitious plan to invest RMB 1 trillion (USD $158 billion) over the next five years, to increase China's semiconductor self-sufficiency to 70 percent, by 2025.

The move will significantly increase supply of NAND flash memory, and is seen as a market threat to Korean NAND flash giants Samsung and SK Hynix, and Japanese Toshiba. IMFlash Technology released its first 64-layer 3D NAND flash to the market in 2017, and is currently developing a 96-layer 3D NAND flash chip, which, along with newer 10 nm-class silicon fabrication process, could double densities over the current 64-layer chips.

Today, Intel announced the Intel SSD DC P4510 Series for data center applications. The P4510 Series uses 64-layer TLC Intel 3D NAND to enable end users to do more per server, support broader workloads and deliver space-efficient capacity. The P4510 Series enables up to four times more terabytes per server and delivers up to 10 times better random read latency at 99.99 percent quality of service than previous generations. The drive can also deliver up to double the input-output operations per second (IOPS) per terabyte. The 1 and 2TB capacities have been shipping to cloud service providers (CSPs) in high volume since August 2017, and the 4 and 8TB capacities are now available to CSPs and channel customers. All capacities are in the 2.5-inch 15 mm U.2 form factor and utilize a PCIe NVMe 3.0 x4 connection.

To accelerate performance and simplify management of the P4510 Series PCIe SSDs and other PCIe SSDs, Intel is also delivering two new technologies that work together to replace legacy storage hardware. Intel Xeon Scalable processors include Intel Volume Management Device (VMD), enabling robust management such as surprise insertion/removal and LED management of PCIe SSDs directly connected to the CPU. Building on this functionality, Intel Virtual RAID on CPU (VROC) uses Intel VMD to provide RAID to PCIe SSDs. By replacing RAID cards with Intel VROC, customers are able to enjoy up to twice the IOPs performance and up to a 70 percent cost savings with PCIe SSDs directly attached to the CPU, improving customer's return on their investments in SSD-based storage.

Micron and Intel today announced an update to their successful NAND memory joint development partnership that has helped the companies develop and deliver industry-leading NAND technologies to market. The announcement involves the companies' mutual agreement to work independently on future generations of 3D NAND. The companies have agreed to complete development of their third-generation of 3D NAND technology, which will be delivered toward the end of this year and extending into early 2019. Beyond that technology node, both companies will develop 3D NAND independently in order to better optimize the technology and products for their individual business needs.

Micron and Intel expect no change in the cadence of their respective 3D NAND technology development of future nodes. The two companies are currently ramping products based on their second-generation of 3D NAND (64 layer) technology. Both companies will also continue to jointly develop and manufacture 3D XPoint at the Intel-Micron Flash Technologies (IMFT) joint venture fab in Lehi, Utah, which is now entirely focused on 3D XPoint memory production.

Toshiba Memory Corporation, the world leader in memory solutions, today announced that it has begun shipping samples of embedded NAND flash memory products for automotive applications that are compliant with JEDEC UFS version 2.1. The new products meet AEC-Q100 Grade2 requirements and support a wide temperature range of -40°C to +105°C, offering the enhanced reliability capabilities that are required by increasingly complex automotive applications. The line-up meets a broad range of applications requirements with five different capacities: 16 GB, 32 GB, 64 GB, 128 GB and 256 GB.

The new products are embedded NAND flash memory products that integrate NAND chips fabricated with 15 nm process technology and a controller in a single package. Storage requirements for automotive applications continue to increase as systems including automotive information & entertainment systems and ADAS become more sophisticated, and UFS supports their high performance and density needs. The addition of automotive UFS expands Toshiba Memory Corporation's line-up of embedded NAND flash memory products for automotive applications, which currently includes automotive e-MMC products. Utilizing the UFS interface allows the new products to achieve sequential read of 850 MB/s and random read of 50,000 IOPS, which are approximately 2.7 times and 7.1 times faster than their current e-MMC counterparts, respectively.

Western Digital today introduced a new portfolio of advanced iNAND embedded flash drives (EFDs) to empower smartphone users to unlock the full potential of today's data-driven applications and experiences. Leveraging Western Digital's 64-layer 3D NAND technology and advanced UFS and e.MMC interface technologies, the intelligent, new iNAND 8521 and iNAND 7550 EFDs deliver outstanding data performance and high storage capacity.

When designed into smartphones and thin, lightweight computing devices, they accelerate the possibilities of a wide range of demanding data-centric applications, including augmented reality (AR), high resolution video capture and rich social media experiences, as well as emerging artificial intelligence (AI) and Internet of Things (IoT) experiences at the "edge." The volume, velocity, variety and value of data continues to exponentially grow and evolve across Big Data, Fast Data and personal data. Many consumers around the world will experience this confluence of data on their smartphone.

Toshiba Memory Corporation, the world leader in memory solutions, has today started sampling Universal Flash Storage (UFS) devices utilizing Toshiba Memory Corporation's cutting-edge 64-layer, BiCS FLASH 3D flash memory. The new UFS devices meet performance demands for applications that require high-speed read/write performance and low power consumption, including mobile devices such as smartphones and tablets, and augmented and virtual reality systems.

The new line-up will be available in four capacities: 32 GB, 64 GB, 128 GB and 256 GB. All of the devices integrate flash memory and a controller in a single, JEDEC-standard 11.5 x 13 mm package. The controller performs error correction, wear leveling, logical-to-physical address translation and bad-block management, allowing users to simplify system development.

ADATA Technology, a leading manufacturer of highperformance DRAM modules, NAND Flash products, and mobile accessories today launchedthe UV220 and UV330 USB Flash drives, adding to its extensive range of portable storage devices. The UV220 works in USB 2.0 and is offered in up to 64GB, while the UV320 operates in much faster USB 3.1 and ships in up to 128GB. The two share a capless design where the connector extends and retracts using a quick-slide mechanism. ADATA remains committed to its USB Flash drive global leadership role and will continue releasing new models as market needs evolve.

From USB 2.0 to USB 3.1 5Gbps, ADATA recognizes demand for diverse USB Flash drives remains strong. Consumers want functionality, style, and ease of use as well as affordability. Hence ADATA delivers: from the entry-level UV220 to the vastly speedier UV320, and their many contemporaries in the ADATA catalog. From 16GB UV220s to 128GB UV320, just these two classic models cover much ground and offer a wealth of options for users that need to quickly save and move data.

Silicon Power adds the ultra-small Jewel J35 and Touch T35 to its USB flash drive portfolio. Thanks to their tiny size and low weight (2cm/2.2g), they are versatile drives that can stay plugged wherever they are needed, for example in laptops, car audio systems, or portable music systems. For easy data sharing or safe data storage, users can choose between capacities from 8GB to 64GB (T35) and 8 GB to 128GB (J35). Despite their compact size, they are still easy to handle - the ergonomic shape of the grip ensures fumble-free plugging and removal.

A ChipHell forum user has done what probably others have already done in relative obscurity: trying (and succeeding) to flash a Vega 64 BIOS onto a Vega 56 graphics card. The result? Well, apparently the shaders won't unlock (at least not according to our very own GPU-Z), but interestingly, performance improves all the same. The lesser amount of shaders on the Vega 56 silicon (3585 Shaders / 224 TMUs / 64 ROPs compared to Vega 64's 4096 / 256 / 64 apparently doesn't hinder performance that much. It appears that the improved clockspeeds of Vega 56 after the BIOS flash do more than enough to offset performance loss from the lesser amount of compute resources available, bumping RX Vega's clock speeds of 1471 MHz core boost clock and 800 MHz HBM2 memory up to Vega 64's 1545 MHz core boost clock and 945 MHz HBM2 clock.

This means that Vega 56 can effectively become a Vega 64 in performance (at least where 3D Mark Fire Strike is concerned), which isn't unheard of in the relationship between AMD's top tier and second-best graphics cards. Now naturally, some Vega 56 samples may even be further overclocked than Vega 64's stock clocks, which means that there is the potential for Vega 56 to have even better performance than Vega 64. The BIOS swap should allow Vega 56 to access higher power states than its stock BIOS allows, which is one of the reasons it can unlock higher core and memory clocks than an overclocked, original BIOS Vega 56 would. However, the fact that a Vega 56 at Vega 64 clocks and a Vega 64 deliver around the same score in benchmarks definitely does raise questions on how well the extra computing resources of Vega 64 are being put to use.

ADATA Technology, a leading manufacturer of high-performance DRAM modules and NAND Flash products,today launched the industrial-grade ICFS314 CFast storage card. Designed for demanding applications and harsh or high traffic environments, the ICFS314 uses 3D MLC NAND to increase durability and longevity. As a CFast 2.0 product, it delivers data in the SATA III (6Gbps) protocol, capable of 550MB/s read and 520MB/s write (more than twice CFast 1.0 speeds). The ICFS314 consumes just over 2W, making it exceedingly power efficient, and is available in a wide range of capacities from 32GB to 512GB.

The shift to more efficient, higher density, and longer lasting 3D NAND is well under way in SSDs. Enterprise and industrial users now also have the option of benefitting from 3D NAND advantages on CompactFlash/CFast products, such as the ICFS314. Stacked or layered NAND improves on its planar predecessor in every way, from speed to lifespan. The ICFS314 arrives in up to 512GB of meticulously-sorted 3D MLC NAND.

GIGABYTE today announced its latest generation of servers based on Intel's Skylake Purley architecture. This new generation brings a wealth of new options in scalability - across compute, network and storage - to deliver solutions for any application, from the enterprise to the data center to HPC. (Jump ahead to system introductions).

This server series adopts Intel's new product family - officially named the 'Intel Xeon Scalable family' and utilizes its ability to meet the increasingly diverse requirements of the industry, from entry-level HPC to large scale clusters.. The major development in this platform is around the improved features and functionality at both the host and fabric levels. These enable performance improvements - both natively on chip and for future extensibility through compute, network and storage peripherals. In practical terms, these new CPUs will offer up to 28 cores, and 48 PCIe lanes per socket.

ADATA Technology, a leading manufacturer of high performance DRAM modules and NAND Flash products, today announced that its upcoming XPG SPECTRIX D40 RGB DDR4 has been certified compatible with ASUS AURA Sync software. This allows users of ASUS motherboards to personalize the RGB lighting elements built into D40 modules with choice of color range, lighting sequence, and more. SPECTRIX D40 modules have been optimized for the Intel X299 platform with a starting speed of 2666MHz. They are also compatible with AMD AM4 motherboards. Designed for gamers, overclockers, and case modders, SPECTRIX D40 DDR4 modules provide more options and customization features and support the trend towards builds that incorporate sophisticated RGB and LED.

Toshiba Memory Corporation, the world leader in memory solutions, today announced development of the world's first BiCS FLASH three-dimensional (3D) flash memory utilizing Through Silicon Via (TSV) technology with 3-bit-per-cell (triple-level cell, TLC) technology. Shipments of prototypes for development purposes started in June, and product samples are scheduled for release in the second half of 2017. The prototype of this groundbreaking device will be showcased at the 2017 Flash Memory Summit in Santa Clara, California, United States, from August 7-10.

Devices fabricated with TSV technology have vertical electrodes and vias that pass through silicon dies to provide connections, an architecture that realizes high speed data input and output while reducing power consumption. Real-world performance has been proven previously, with the introduction of Toshiba's 2D NAND Flash memory.

After announcing their intention to begin mass production of their latest 72-Layer 3D NAND Flash back in April, SK Hynix has now confirmed that it has entered mass production of the high density NAND modules. Apparently, SK Hynix has already achieved the much sought-after "golden yield" ratios, where the semiconductor yield is now at such a level that it is advantageous to finally enter mass production. Apparently, SK Hynix's leadership was fearful of not being able to achieve the golden yield in a timely manner after their announcement of the technology only three months ago; however, after its "management team and engineers repeatedly spent nights doing research, yield went up vertically and has become comparable to Samsung Electronics'" own yield - and as you know, Samsung is kind of the golden standard when it comes to NAND technology.

According to industry sources, SK Hynix is already mass-producing SSDs (Solid State Drives) with the company's own controllers and firmware which leverage this new 72-layer 256Gb NAND flash memory. This is a welcome change for the company which should allow it to increase revenue, since this is the first time controllers are developed in-house. The company is also said to be already producing eMMC (embedded Multimedia Card) for mobile devices based on this technology, with supply already arriving to its customers.

Samsung Electronics, the world leader in advanced memory technology, today announced that it has begun volume production of 64-layer, 256Gb V-NAND flash memory for use with an expanding line-up of storage solutions for server, PC and mobile applications. Since Samsung began producing the industry's first SSD based on 64-layer 256Gb V-NAND chips in January for key IT customers, it has been working on a wide range of new V-NAND-based mobile and consumer storage solutions. These include embedded UFS memory, branded SSDs and external memory cards, which the company plans to introduce later this year.

To solidify its competitive edge in the memory market, Samsung intends for its volume production of the 64-layer V-NAND chip, which is widely referred to as 4th generation V-NAND, to cover more than 50 percent of its monthly NAND flash production by year end. "Following a long commitment to innovative technology, we will continuously push the limits of generations of industry-first V-NAND production, in moving the industry closer to the advent of the terabit V-NAND era," said Kye Hyun Kyung, Executive Vice President of the Flash Product and Technology team, Memory Business at Samsung Electronics. "We will keep developing next-generation V-NAND products in sync with the global IT industry so that we can contribute to the timeliest launches of new systems and services, in bringing a higher level of satisfaction to consumers."

User TonybonJoby in our own forums has successfully flashed his XFX RX 480 graphics card with the BIOS from a Sapphire RX 580 Limited Edition (the one that runs at 1411 MHz Boost clocks, yes.) Having obtained the Sapphire's BIOS right here on TPU, he then flashed it onto his graphics card (which possesses a dual-BIOS setup; this is an important point which you should consider, as it gives you an extra safety net should anything go wrong) through ATIFlash. The newly-christened RX 580 thus smiles for the screenshot, with a stock clock of 1411 MHz, higher than most overclocks possible with the RX 480 cards, probably due to increased voltages on the BIOS level. The user then tested the card on The Witcher 3 and Furmark, with no problems having been reported. Just remember to back-up your BIOS with GPU-Z and make sure to peruse our forums for some details on this flashing process before you get the proverbial grease on your elbows.

Essentially, this may allow you to bypass some artificial overclocking limitation with your graphics card, probably by increased voltages on different power states of the card. You should do this at your own risk, and remember, the only guaranteed way of getting an RX 580 is... you guessed it, buying an RX 580. However, this might also give you an extra performance boost, and free performance is always good, right?

ADATA Technology, a leading manufacturer of high performance DRAM modules, NAND Flash products, and mobile accessories today launched the SD600 external SSD, which uses high quality 3D TLC NAND to offer 256GB and 512GB variants. The drive reaches speeds of 440MB/s read and 430MB/s write, easily outpacing external HDDs. It weighs a mere 90g for convenient portability, and works driver-free with Windows PC, Xbox One, PS4, and Android. The SD600 is available in all-black and red-black color schemes, and employs impact-resistant materials in its sporty design to support active lifestyles.

ADATA Technology, a leading manufacturer of high performance DRAM modules, NAND Flash products, and mobile accessories today launched the XPG SX950 SSD and its accompanying gaming-styled EX500 drive enclosure. Loaded with up to 960GB of 3D MLC NAND and driven by a SMI controller, the SX950 utilizes a custom ADATA PCB and is backed by an extra-strict chip sorting process to ensure an SSD that can handle prolonged high demand. Performance reaches 560MB/s read and 530MB/s write. Bearing the signature XPG look, the EX500 is aimed at gamers and case modders, boasting a textured enclosure and a vibrant yet aggressive feel. It arrives with a spacer and bracket for easy install on desktops and notebooks. For users that would like to use the SX950 as external storage, the EX500 offers a stylish, durable, and easy-install enclosure that pairs instantly with desktops, notebooks, and game consoles via high speed USB 3.1.

ADATA is completing its transition to stacked memory, or 3D NAND. This allows for SSDs with bigger capacities without a correlating increase in prices paid by end users. The SX950 uses durable 3D MLC (multi-level cell) NAND Flash and SMI controller. Consumers can choose from 240GB, 480B, and 960GB versions of the SX950. Not only denser (higher capacity), 3D NAND is also roughly 10% faster than 2D NAND and so the SX950 outpaces its predecessor, the SX930 - reaching 560MB/s read and 530MB/s write.

Peak season demand and surging prices for DRAM products across different applications resulted in an 18.2% sequential growth in the global DRAM revenue for the final quarter of 2016, reports DRAMeXchange, a division of TrendForce.

Smartphone shipments peaked in the fourth quarter on account of the traditional busy season. Chinese smartphone brands continued to post strong sales while Apple benefitted from the release of iPhone 7. "Rising demand for mobile DRAM kept squeezing the industry's production capacity for PC DRAM," said Avril Wu, research director of DRAMeXchange. "Contract prices of PC DRAM modules increased by more than 30% sequentially on average in the fourth quarter due to insufficient market supply. Server DRAM lagged behind PC and mobile DRAM in terms of price hike during the same period, but it is expected to catch up in the first quarter of this year."

Intel is readying a fleet of new SSDs based on its new 3D XPoint non-volatile memory, a technology that Intel hopes will replace NAND flash in the years to come. The company developed this technology in collaboration with Micron Technology, under its IMFlash Technologies banner. The first Intel SSDs with this memory will be sold under the Optane brand. There are several sub-brands targeting the various market segments (client, enterprise, data-center, etc.), and technical slides of the data-center targeted Optane DC P4800X SSD were leaked to the web.

One of the first Optane DC P4800X SSDs comes in a rather measly capacity of 375 GB. The drive is built in the half-height PCI-Express add-on card (AIC) form-factor, with PCI-Express 3.0 x4 host interface. The drive belts out sequential transfer rates of up to 2400 MB/s reads, with up to 2000 MB/s writes, which may not sound like much given that even TLC NAND flash based PCIe 3.0 x4 drives offer higher transfer rates; until you look at three key metrics - latency, random-access performance, and endurance.

Toshiba Corporation today announced that it has started construction of a new state-of-the-art semiconductor fabrication facility, Fab 6, and a new R&D center, the Memory R&D Center, at Yokkaichi Operations in Mie prefecture, Japan, the company's main memory production base.

Fab 6 will be dedicated to production of BiCS FLASH, Toshiba's innovative 3D Flash memory. Like Fab 5, construction will take place in two phases, allowing the pace of investment to be optimized against market trends, with completion of Phase 1 scheduled for summer 2018. Toshiba will determine installed capacity and output targets and schedules by closely monitoring the market.