PNY announced today the newest addition to its Flash Memory Card and Flash Memory Card Reader assortment, the ultra-fast PRO Elite Prime and Performance Prime product lines. PNY PRO Elite Prime microSD Flash Cards and PNY Performance Prime microSD Card Reader work together to achieve ultra-fast performance and to satisfy the needs of extreme users with highly demanding tasks. Utilizing the latest technology, experience extreme performance with transfer speeds of up to 200 MB/s read and up to 150 MB/s write. The PRO Elite Prime microSD Cards expand PNY's capacity offerings to new levels, with 64 GB to 1.5 TB available, achieving next-level performance in high-capacity options.

PRO Elite Prime microSD Flash Cards
PNY 64 GB-1.5 TB PRO Elite Prime Class 10 U3 V30 A2 microSD Cards offer extreme performance for professionals and advanced users that demand higher storage capacities and faster read and write speeds. Featuring U3 technology and V30 Video Speed Class, the PRO Elite Prime microSD is ideal for capturing high-quality HD photography and 4K Ultra HD videography at 4096 x 3072 resolution. Boasting an A2 App Performance rating, PRO Elite Prime microSDs are fully optimized for running apps directly from the card, delivering faster app launches and better performance. PRO Elite Prime offers a broad range of densities perfect for easy file management and all expanded storage needs. Whether you need storage for small or large files, PRO Elite Prime offers up to 1.5 TB of capacity, ensuring professionals never have to compromise on storage.

KIOXIA America, Inc. today announced that it has begun mass production of the industry's first Universal Flash Storage (UFS) Ver. 4.0 embedded flash memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology.

QLC UFS offers a higher bit density than traditional TLC UFS, making it suitable for mobile applications that require higher storage capacities. Advancements in controller technology and error correction have enabled QLC technology to achieve this while maintaining competitive performance. KIOXIA's new 512 gigabyte (GB) QLC UFS achieves sequential read speeds of up to 4,200 megabytes per second (MB/s) and sequential write speeds of up to 3,200 MB/s, taking full advantage of the UFS 4.0 interface speed.

Kioxia Corporation, a world leader in memory solutions, today announced that the company's research papers have been accepted for presentation at IEEE International Electron Devices Meeting (IEDM) 2024, a prestigious international conference to be held in San Francisco, USA, from December 7th to 11th.

Kioxia is committed to the research and development of semiconductor memory, which is indispensable for the advancement of AI and the digital transformation of society. Beyond its state-of-the-art three-dimensional (3D) flash memory technology BiCS FLASH, Kioxia excels at research in emerging memory solutions. The company is constantly striving to meet the needs for future computing and storage systems with innovative memory products.

SMART Modular Technologies, Inc. ("SMART"), a division of SGH and a global leader in memory solutions, solid-state drives, and advanced memory, announces a proprietary technology to mitigate the adverse impact of single event upsets (SEUs) in high-reliability flash-memory based systems. SMART Modular's MP3000 NVMe SSD products with SEU mitigation reduce annual failure rates from as high as 17.5k/Mu (million units) to less than 10/Mu and can save hundreds of thousands of dollars in potential service costs by helping to ensure hundreds of hours of uninterrupted uptime, especially important for tough-to-repair remote deployments.

"Our industry standard SATA and PCIe NVMe boot drives can slash annual failure rates by as much 99.7% by recovering from soft errors due to single event upsets," states Satya Iyer, SMART's vice president of specialty memory. "In networking and telecom applications in remote and hard-to-service locations, SEU mitigation and the ability to recover from soft errors can make the difference for systems that require 24/7 uptime."

Kioxia Corporation, a world leader in memory solutions, today announced that the building construction of Fab2 (K2) of its industry-leading Kitakami Plant was completed in July. K2 is the second flash memory manufacturing facility at the Kitakami Plant in the Iwate Prefecture of Japan. As demand is recovering, the company will gradually make capital investments while closely monitoring flash memory market trends. Kioxia plans to start operation at K2 in the fall of Calendar Year 2025.

In addition, some administration and engineering departments will move into a new administration building located adjacent to K2 beginning in November 2024 to oversee the operation of K2. A portion of investment for K2 will be subsidized by the Japanese government according to the plan approved in February 2024.

Kioxia Corporation, a world leader in memory solutions, today announced that it started sample shipments of 2 Tb (Tera bit) Quad-Level-Cell (QLC) memory devices with its eighth-generation BiCS FLASH 3D flash memory technology. This 2 Tb QLC device has the highest capacity in the industry, elevating storage devices to a new capacity point that will drive growth in multiple application segments including AI.

With its latest BiCS FLASH technology, Kioxia has achieved both vertical and lateral scaling of memory die through proprietary processes and innovative architectures. In addition, the company has implemented the groundbreaking CBA (CMOS directly Bonded to Array) technology, which enables the creation of higher density devices and an industry-leading interface speed of 3.6 Gbps. Together, these advanced technologies are applied in the creation of 2 Tb QLC, resulting in the industry's highest capacity memory device.

Silicon Motion's SM2508 was first revealed in August last year at the Flash Memory Summit 2023, but after that things went pretty quiet. However, the company was demoing the SM2508 up and running at Computex this past week and it's set to edge out Phison's E26 Max14um in the battle of fastest NVMe SSD controller. We're not talking about any massive gains here, but the reference drive from Silicon Motion was shown running CrystalDiskMark 8.0.4 at the show and if we do a rough comparison to a Phison E26 Max14um, the SM2508 beats Phison by about 800 MB/s in sequential read performance and 500 MB/s in sequential write performance.

This might not seem like a whole lot, but the SM2508 is built on TSMC's N6 node which results in a 3.5 Watt peak power consumption, or 7 Watts for the entire SSD at load. A typical Phison E26 based SSD draws in excess of 11 Watts of power at full load, which is a big difference in a mobile device. This should obviously also lead to lower thermals and we should finally see PCIe 5.0 drives that don't need massive heatsinks or active cooling. In fact, 7 Watts power draw is very similar to Phison's E18 PCIe 4.0 based SSDs. Silicon Motion is still working on fine tuning the firmware for the SM2508, so performance might yet improve to reach the promised 14 GB/s write performance. Currently the random performance is also looking a bit on the weak side compared to Phison. According to Tom's hardware, we should see the first drives with the Silicon Motion SM2508 appear in the market sometime in Q4 this year.

Kioxia Corporation, a world leader in memory solutions, today announced sampling of the industry's first Universal Flash Storage (UFS) Ver. 4.0 embedded flash memory devices designed for automotive applications. These new, higher performing devices deliver fast embedded storage transfer speeds in a small package size and are targeted to a variety of next-generation automotive applications, including telematics, infotainment systems and ADAS. The improved performance] of UFS products from Kioxia - including approximately +100% for sequential read speed and approximately +40% for sequential write speed - enables these applications to take advantage of 5G's connectivity benefits, leading to faster system startup times and a better user experience.

The first to introduce UFS technology, Kioxia continues to move the technology forward. Its new UFS Ver. 4.0 devices integrate the company's innovative BiCS FLASH 3D flash memory and a controller in a JEDEC-standard package. UFS 4.0 incorporates MIPI M-PHY 5.0 and UniPro 2.0 and supports theoretical interface speeds of up to 23.2 Gbps per lane or 46.4 Gbps per device. UFS 4.0 is backward compatible with UFS 3.1.

Apple has been experimenting with Large Language Models (LLMs) that power most of today's AI applications. The company wants these LLMs to serve the users best and deliver them efficiently, which is a difficult task as they require a lot of resources, including compute and memory. Traditionally, LLMs have required AI accelerators in combination with large DRAM capacity to store model weights. However, Apple has published a paper that aims to bring LLMs to devices with limited memory capacity. By storing LLMs on NAND flash memory (regular storage), the method involves constructing an inference cost model that harmonizes with the flash memory behavior, guiding optimization in two critical areas: reducing the volume of data transferred from flash and reading data in larger, more contiguous chunks. Instead of storing the model weights on DRAM, Apple wants to utilize flash memory to store weights and only pull them on-demand to DRAM once it is needed.

Two principal techniques are introduced within this flash memory-informed framework: "windowing" and "row-column bundling." These methods collectively enable running models up to twice the size of the available DRAM, with a 4-5x and 20-25x increase in inference speed compared to native loading approaches on CPU and GPU, respectively. Integrating sparsity awareness, context-adaptive loading, and a hardware-oriented design pave the way for practical inference of LLMs on devices with limited memory, such as SoCs with 8/16/32 GB of available DRAM. Especially with DRAM prices outweighing NAND Flash, setups such as smartphone configurations could easily store and inference LLMs with multi-billion parameters, even if the DRAM available isn't sufficient. For a more technical deep dive, read the paper on arXiv here.

Kioxia Corporation, a world leader in memory solutions, today announced sampling of new, higher performing JEDEC e-MMC Ver. 5.1-compliant embedded flash memory products for consumer applications. The new products integrate a newer version of the company's BiCS FLASH 3D flash memory and a controller in a single package, reducing processor workload and improving ease of use. Both 64 and 128 gigabytes (GB) products will be available.

As the market continues to shift to UFS, there are cases where e-MMC may still be used. This includes consumer products with mid-range storage requirements such as tablets, personal computers, point of sale devices and other portable handheld devices, as well as smart TVs and smart NICs. Kioxia continues to reinforce its market-leading position by delivering a broad, high-performance product lineup and expanding the available options for these applications.

Frore Systems, the maker of AirJet Mini, the World's first solid-state active cooling chip, demonstrated record breaking large capacity SSD performance, in an industry first 64 TB SSD storage device with AirJet. The collaboration with OWC, a leader in reliable solutions for computer hardware, accessories, and software, showcases the 64 TB OWC Mercury Pro U.2 Dual storage device with silent active cooling using 8 AirJet Minis, unleashing performance and enabling the fastest, compact, 64 TB capacity SSD storage device in its class.

Heat is the single biggest problem facing the electronics industry, and SSDs are no exception. The excessive heat generated by the fully loaded operation of 64 TB SSD renders the device inoperable when using traditional cooling methods like noisy mechanical fans or bulky ineffective heat sinks. With AirJet, the 64 TB OWC Mercury Pro U.2 Dual storage device operates between 2200 MB/s to 2600 MB/s sustained sequential writes, enabling large scale data storage in a compact form factor for the first time. This is great news for industries like film and television, that need silent, fast, secure and large-scale storage in small portable packages. The live demonstration of the 64 TB OWC Mercury Pro U.2 Dual storage device is on display at the Flash Memory Summit 2023 in Santa Clara, California.

Courtesy of an SK Hynix keynote speech at the Flash Memory Summit, we now have a few more details about its upcoming 321-layer NAND Flash. PC Watch Japan who attended the industry event shared some pictures from the keynote which adds some crucial details that were missing from last week's press release. SK Hynix's officially shared performance figures tell us that we should expect up to 12 percent faster program performance, which should be the write performance and up to 13 percent improved read latency. Both of these performance metrics will obviously depend on the SSD controller the NAND is paired with, the related firmware on said controller and so forth.

PC Watch Japan also quotes a program throughput of 194 MB/s, which is 26 MB/s improvement over SK Hynix 176-layer NAND and currently the highest known program throughput of any announced NAND Flash. That said, Kioxia is expecting to hit 205 MB/s with its next generation of 300 layer NAND. SK Hynix also claims 10 percent better read power efficiency, which is really neither here nor there when it comes to modern SSDs, unless we're talking server level SSDs with a dozen of these NAND chips or more. Rather than going with two stacks of 150 plus layers each, SK Hynix went with three times 107 layer stacks, which should be compared to their current 238 layer product which has two stacks of 119 layers. This made the new NAND package easier to produce and should in the long term result in higher yields. Each NAND package is expected to deliver a memory density of 20 Gbit per square millimetre or more, which is almost twice that of its 176-layer NAND.

KIOXIA America, Inc. today announced that its CD8P Series data center SSD has received a Flash Memory Summit "Best of Show" award in the "Most Innovative Memory Technology" category. These awards recognize the most significant products and companies worldwide within the flash memory and solid-state storage industries.

"We are proud to recognize KIOXIA for their unwavering commitment to advancing flash memory," said Jay Kramer, Chairman of the Awards Program and President of Network Storage Advisors Inc. "KIOXIA was the first vendor to offer drives designed with PCIe 5.0 NVMe 2.0 interface technology. The new KIOXIA CD8P drives continue the company's momentum by delivering the high performance and low latency required by next-generation digital enterprise and data center infrastructures."

It appears that Silicon Motion is ready to start competing with Phison in the PCIe 5.0 NVMe SSD controller market, as the company has shown a new controller at the Flash Memory Summit 2023 which should give Phison a run for its money. The SM2508 as the controller is called is set to be the most power efficient PCIe 5.0 NVMe controller to date, with a power consumption of 3.5 W, which is in line with most PCIe 4.0 SSD controllers. This still means that a decent heatsink will be needed, but not active cooling or massive heatsinks that we've seen on the current crop of PCIe 5.0 drives based on Phison's E26 controller.

Silicon Motion also appears to have the Phison E26 beat, in terms of performance, as the SM2508 promises to deliver sequential read and write speeds of up to 14 GB/s. Random performance is rated at 2.5 million IOPS read and 2.4 million IOPS write. To get the most out of the SM2508 2400 MT/s or faster NAND flash is going to be needed to deliver the claimed performance figures though, but according to Anandtech, the SM2508 is future proofed by supporting NAND flash speeds of up to 3600 MT/s, so we might see faster drives based on the controller once faster NAND appears, such as SK Hynix new 321-layer NAND, which is scheduled for a 2025 introduction. The SM2508 on the other hand is said to be launching at the end of this year or early 2024.

Lightelligence, the global leader in photonic computing and connectivity systems, today announced Photowave, the first optical communications hardware designed for PCIe and Compute Express Link (CXL) connectivity, unleashing next-generation workload efficiency.

Photowave, an Optical Networking (oNET) transceiver leveraging the significant latency and energy efficiency of photonics technology, empowers data center managers to scale resources within or across server racks. The first public demonstration of Photowave will be at Flash Memory Summit today through Thursday, August 10, in Santa Clara, Calif.

SK hynix Inc. showcased today the sample of the 321-layer 4D NAND, making public the progress on its development of the industry's first NAND with more than 300 layers. The company gave a presentation on the progress on the development of its 321-layer 1 Tb TLC 4D NAND Flash and displayed the samples at the Flash Memory Summit (FMS) 2023 taking place Aug. 8-10 in Santa Clara.

SK hynix is the first in the industry to unveil the progress on the development of a NAND with more than 300 layers in detail. The company plans to raise the level of completion of the 321-layer product and start mass production from the first half of 2025. The company said its technological competitiveness accumulated from the success of the world's highest 238-layer NAND, already in mass production, paved the way for a smooth progress for the development of the 321-layer product. "With another breakthrough to address stacking limitations, SK hynix will open the era of NAND with more than 300 layers and lead the market."

Today, the UCIe Consortium announced the public release of UCIe (Universal Chiplet Interconnect Express ) 1.1 Specification to deliver valuable improvements in the chiplet ecosystem, extending reliability mechanisms to more protocols and supporting broader usage models. Additional enhancements are included for automotive usages - such as predictive failure analysis and health monitoring - and enabling lower-cost packaging implementations. The specification also details architectural specification attributes to define system setups and registers that will be used in test plans and compliance testing to ensure device interoperability. The UCIe 1.1 Specification is fully backward compatible with the UCIe 1.0 Specification.

"UCIe Consortium is living up to its mission and establishing a vibrant chiplet ecosystem as the industry musters around UCIe technology," said Dr. Debendra Das Sharma, chairman, UCIe Consortium. "The UCIe 1.1 Specification was developed by leaders in the industry to advance the chiplet ecosystem and address significant demand for full stack streaming protocol enhancements. We're proud of the progress this release represents toward realizing our vision and our underlying efforts to establish a chiplet ecosystem by developing a robust compliance program."

KIOXIA America, Inc. today announced the availability of the first hardware samples that support the Linux Foundation's vendor-neutral Software-Enabled Flash Community Project, which is making flash software-defined. The company is expecting to deliver customer samples in August 2023. Built for the demanding needs of hyperscale environments, Software-Enabled Flash technology helps hyperscale cloud providers and storage developers maximize the value of flash memory. The hardware from KIOXIA is the first step to putting this working technology in the hands of developers.

The first running units will be showcased in live demonstrations in the KIOXIA booth (#307) next week at Flash Memory Summit 2023 (FMS 2023). This new class of drive consists of purpose-built, media-centric flash hardware focused on hyperscale requirements that work with an open source API and libraries to provide the needed functionality. By unlocking the power of flash, this technology breaks free from legacy hard disk drive (HDD) protocols and creates a platform specific to flash media in a hyperscale environment.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced its participation at Flash Memory Summit 2023, taking place in person in Santa Clara, California, on August 8-10. CEO, Andy Hsu, will deliver a keynote address titled "New Architectures which will Drive Future 3D NAND and 3D DRAM Solutions" on August 9th at 11:40 a.m. Pacific Time.

Earlier this year, Neo Semiconductor announced the launch of its ground-breaking technology, 3D X-DRAM. This development is the world's first 3D NAND-like DRAM cell array that is targeted to solve DRAM's capacity bottleneck and replace the entire 2D DRAM market. 3D X-DRAM can be manufactured using the existing 3D NAND flash memory process with minor changes, significantly reducing the time and cost spent developing a new 3D process. During the keynote, Mr. Hsu will reveal the 3D X-DRAM process flow and technical details.

SK hynix Inc. announced today that it has received the automotive ASPICE Level 2 certification, marking the first case that a Korean semiconductor company wins the recognition. The certification, essential for automotive NAND solution products, is expected to lead to an increased supply and stronger profitability of the company's NAND solution products such as Universal Flash Memory and Solid State Drive, of which combined market is expected to grow by more than an average 20% every year, the company said.

With introduction and adoption of electric vehicles and autonomous driving system, the importance of technology in the areas of electric and electronic parts of vehicles is also growing. Particularly, with systems for Advanced Driver Assistance System and Infotainment getting more sophisticated, the importance of software quality management as well as compatibility and stability is growing, requiring auto part suppliers to obtain the ASPICE Level 2 or the equivalent.

Demonstrating continued innovation, Kioxia Corporation and Western Digital Corp. today announced details of their newest 3D flash memory technology. Applying advanced scaling and wafer bonding technologies, the 3D flash memory delivers exceptional capacity, performance and reliability at a compelling cost, which makes it ideal for meeting the needs of exponential data growth across a broad range of market segments.

"The new 3D flash memory demonstrates the benefits of our strong partnership with Kioxia and our combined innovation leadership," said Alper Ilkbahar, Senior Vice President of Technology & Strategy at Western Digital. "By working with one common R&D roadmap and continued investment in R&D, we have been able to productize this fundamental technology ahead of schedule and deliver high-performance, capital-efficient solutions."

YMTC today at the Flash Memory Summit (FMS) 2022 unveiled its X3-9070 TLC 3D NAND flash powered by Xtacking 3.0 architecture. Since its debut show at FMS 2018, YMTC's Xtacking technology has become a hallmark of the company's vision for innovation, and the approach to hybrid bonding has been widely recognized as one of the key enablers of the industry's future growth. Built out to be a common growth platform that drives value and innovation in the semiconductor ecosystem, YMTC's Xtacking 3.0 architecture opens up a world of opportunities for diversified applications in 5G, AloT, and beyond.

From 1.0 to 3.0, YMTC's Xtacking technology, a heterogeneous 3D integration architecture, has established a proven track record of success, as evidenced by a diverse portfolio of Xtacking NAND-based system solutions, including SATA III, PCIe Gen3 & Gen4 SSDs, as well as eMMC & UFS for mobile and embedded applications, garnering recognition from leading OEMs.

Phison Electronics Corp., a global leader in NAND flash controller and storage solutions, today announced significant milestones in 2022 that were highlighted by key partnerships, product innovations and advancements, and overall technology leadership.

"Despite market challenges, Phison is proud to have successfully navigated 2022 with strong innovation and technology leadership, two hallmarks of our company," said K.S. Pua, Phison CEO. "As a forward-thinking company, we cannot wait to bring more SSD customizations, innovations, and solutions to our partners, and customers next year."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, as promised at Flash Memory Summit 2022 and Samsung Memory Tech Day 2022, announced today that it has begun mass producing a 1-terabit (Tb) triple-level cell (TLC) eighth-generation Vertical NAND (V-NAND) with the industry's highest bit density. At 1 Tb, the new V-NAND also features the highest storage capacity to date, enabling larger storage space in next-generation enterprise server systems worldwide.

"As market demand for denser, greater-capacity storage pushes for higher V-NAND layer counts, Samsung has adopted its advanced 3D scaling technology to reduce surface area and height, while avoiding the cell-to-cell interference that normally occurs with scaling down," said SungHoi Hur, Executive Vice President of Flash Product & Technology at Samsung Electronics. "Our eighth-generation V-NAND will help meet rapidly growing market demand and better position us to deliver more differentiated products and solutions, which will be at the very foundation of future storage innovations."

KIOXIA America, Inc. is at Intel Innovation this week to demonstrate its CM7 Series NVMe SSDs that deliver next-generation levels of performance to enterprise and data center workloads. The KIOXIA CM7 family is designed with PCIe 5.0 technology in Enterprise and Datacenter Standard Form Factor (EDSFF) E3.S and 2.51-inch form factors. These drives double performance from the prior generation and offer an expanded set of form factor options, larger capacities, and advanced features.

Intel Innovation is a technology showcase event that spotlights the tools, training and community created to empower developers to create what's next. CM7 demos will be conducted in the KIOXIA kiosk located in Intel Innovation's PCIe 5.0 and CXL Ecosystems Zone on the show floor of San Jose's McEnery Convention Center. KIOXIA will present a video showing its PCIe 5.0 drives demonstrating high performance, low latency and high bandwidth, in a 12th Gen Intel Core processor-based workstation. CM7 performance of up to 14 gigabytes per second sequential read throughput, utilizing the full bandwidth of PCIe 5.0 x4 speed, will be shown.