JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of its next-generation storage system standard, Universal Flash Storage (UFS). UFS is designed to be the most advanced specification for both embedded and removable flash memory-based storage in mobile devices such as smart phones and tablet computers.

The UFS standard represents an evolutionary progression of JEDEC standards in this field, and has been specifically tailored for mobile applications and computing systems requiring high performance and low power consumption. The initial data throughput for UFS will be 300 megabytes per second (MB/s), and the standard also supports command queuing features to raise random read/write speeds. JESD220 Universal Flash Storage may be downloaded free of charge from the JEDEC website here.

SanDisk today announced the world's fastest high-capacity CompactFlash card. The latest milestone in SanDisk's long history of industry-leading products, the SanDisk Extreme Pro CompactFlash card features 128 gigabytes (GB) of storage and up to 100 megabyte per second (MB/sec) write speeds. With its Power Core controller and UDMA-7 interface, the card delivers the performance demanded by high-end DSLR cameras.

SanDisk today announced the world's fastest high-capacity CompactFlash card. The latest milestone in SanDisk's long history of industry-leading products, the SanDisk Extreme Pro CompactFlash card features 128 gigabytes (GB) of storage and up to 100 megabyte per second (MB/sec) write speeds. With its Power Core controller and UDMA-7 interface, the card delivers the performance demanded by high-end DSLR cameras.

Micron Technology, Inc. today introduced a portfolio of high-capacity flash memory products that will lengthen the life of NAND for years to come. By integrating the error management techniques in the same NAND package, the new Micron ClearNAND devices alleviate the challenges traditionally found in NAND process shrinks. Micron's ClearNAND portfolio extends the opportunities for more advanced NAND process generations to be used in enterprise servers, tablet PCs, portable media players, and dozens of other consumer applications.

"The pace of NAND scaling is largely responsible for the incredible growth and success the industry has seen to date, and for helping to create new flash-based storage solutions," said Glen Hawk, vice president of Micron's NAND Solutions Group. "While the advantages in NAND scaling are evident, so are the challenges with the technology becoming increasingly more difficult to manage. Micron's ClearNAND products remove this management burden for our customers and extend the life of this all-important technology."

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today the industry's first production of a 3-bit-cell (3bit), 64 gigabit (Gb) NAND flash using 20 nanometer (nm)-class process technology. The highly advanced new chip can be used in high-density flash solutions such as USB flash drives (UFDs) and Secure Digital (SD) memory cards.

"Samsung has repeatedly provided the market with leading-edge NAND flash solutions, including the introduction of 30nm-class, 32Gb 3-bit NAND flash last November," said Seijin Kim, vice president, Flash Memory Planning/Enabling, Samsung Electronics. "By now entering into full production of 20nm-class 64Gb 3-bit devices, we expect to accelerate adoption of our high-performance NAND solutions that use Toggle DDR technology, for applications that also require high-density NAND."

Elpida Memory, Inc. and Spansion Inc., today announced they have created the industry's first charge-trapping 1.8 V, 4-gigabit SLC (Single Level Cell) NAND Flash memory. This NAND memory, based on Spansion's MirrorBit charge-trapping technology, is being produced at Elpida's Hiroshima factory. The advanced technical expertise and strong cooperation of the two companies has made it possible to develop and manufacture the world's first charge-trapping NAND Flash memory.

Compared to floating-gate NAND Flash memory, charge-trapping NAND Flash memory is more scalable and has a simpler cell structure. It offers superior performance, faster read and faster programming speeds.

Toshiba Corporation, reinforcing its leadership in the development and fabrication of cutting-edge, high density NAND flash memories, has announced that it today started mass production of NAND flash memories fabricated with 24nm*1 process technology. This latest technology advance has already been applied to 2bit-per-cell 64-gigabit (Gb) chips that are the world's smallest and offer the highest density on a single chip (8 gigabytes (GB))*2, and which are available from today. Toshiba will also add 32Gb and 3bit per cell products fabricated with the 24nm process technology to its product line-up.

Toshiba leads the industry in fabricating high density, small die size NAND flash memory chips. Application of the 24nm generation process technology will further shrink chip size, allowing Toshiba to boost productivity and bring further enhancements to high density, small sized products. The 24nm process products are also equipped with Toggle DDR, which enhances data transfer speed.

Intel Corporation and Micron Technology Inc. today announced the delivery of 3-bit-per-cell (3bpc) NAND flash memory on 25-nanometer (nm) process technology, producing the industry's highest capacity, smallest NAND device. The companies have sent initial product samples to select customers. Intel and Micron expect to be in full production by the end of the year.

The new 64-gigabit (Gb) 3bpc on 25nm memory device offers improved cost efficiencies and higher storage capacity for the competitive USB, SD (Secure Digital) flash card and consumer electronics markets. Flash memory is primarily used to store data, photos and other multimedia for use in capturing and transferring data between computing and digital devices such as digital cameras, portable media players, digital camcorders and all types of personal computers. These markets are under constant pressure to provide higher capacities at low prices.

OCZ Technology Group, Inc., a leading provider of high-performance solid-state drives (SSDs) and memory modules for computing devices and systems, will showcase the Company's leading-edge SSD solutions at the 2010 Flash Memory Summit in booth #415 at the Santa Clara Convention Center in Santa Clara, CA August 17-19. OCZ's commitment to advancing flash technology for enterprise and commercial applications makes the Flash Summit is the ideal space to demonstrate cutting edge technology and solutions.

OCZ will demonstrate the breakthrough HSDL (High Speed Data Link) interface and accompanying IBIS 3.5" HSDL SSD, which was developed to revolutionize data transfer rates and bandwidth and take SSD storage technology to the next level. HSDL eliminates the SATA bottleneck and is ideal for a wide range of enterprise applications including high performance computing, servers and cloud computing solutions. Likewise, the RevoDrive PCI-Express SSD will be entered in the "Best of Show" awards as the highest performing bootable PCI-E drive at its price point on the market.

Toshiba America Electronic Components, Inc.(TAEC) and its parent company Toshiba Corporation today announced the launch of a 128-gigabyte (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry. The module is fully compliant with the latest e-MMC standard, and is designed for application in a wide range of digital consumer products, including smartphones, tablet PCs and digital video cameras. Samples will be available in September, and mass production will start in the fourth quarter (October to December) of 2010.

The new 128GB embedded device integrates sixteen 64Gbit (equal to 8GB) NAND chips fabricated with Toshiba's cutting-edge 32nm process technology and a dedicated controller into a small package 17 x 22 x 1.4mm. Toshiba is the first company to succeed in combining sixteen 64Gbit NAND chips, and applied advanced chip thinning and layering technologies to realize individual chips that are only 30 micrometers thick.

Fujitsu Microelectronics Limited today announced the development of new flash memory macro that enables NOR flash memory circuits to achieve high-speed read operations while operating at low power currents. The new flash memory macro is guaranteed to retain program data storage for 20 years, or 100,000 write/erase cycles for data storage, while improving access speeds by 2.5 times to 10 nanoseconds (10 ns), and reducing the required operating current per cell by two-thirds to 9 microamperes (9 µA), compared to Fujitsu's past technologies. This technology will be implemented in microcontrollers featuring embedded flash memory in automotive, industrial, and consumer electronics applications for which high speed, low current, and high reliability are all priorities, thus contributing to a reduction in the burden on the environment.

Intel Corporation and Micron Technology, Inc. today announced the world's first 25-nanometer (nm) NAND technology, which provides a more cost-effective path for increasing storage capacity in such popular consumer gadgets as smartphones, personal music and media players (PMPs), as well as the new high-performance class of solid-state drives (SSDs).

NAND flash memory stores data and other media contained in consumer electronics products, retaining information even when the power is turned off. The drive toward smaller NAND processes enables the continued development and introduction of new uses for the technology. Not only is the 25nm process the smallest NAND technology, it is also the smallest semiconductor technology in the world - a technological accomplishment that continues the advancement of more music, video, and other data in today's consumer electronics and computing applications.

Toshiba Corp. (Toshiba) and Toshiba America Electronic Components, Inc. (TAEC), its subsidiary in the Americas, today announced the launch of a 64 gigabyte (GB) embedded NAND flash memory module, the highest capacity yet achieved in the industry. The chip is the flagship device in a line-up of six new embedded NAND flash memory modules that offer full compliance with the latest e-MMC standard, and that are designed for application in a wide range of digital consumer products, including Smartphones, mobile phones, netbooks and digital video cameras. Samples of the 64GB module are available from today, and mass production will start in the first quarter of 2010.

The new 64GB embedded device combines sixteen pieces of 32Gbit (equal to 4GB) NAND chips fabricated with Toshiba's cutting-edge 32nm process technology, and also integrates a dedicated controller. Toshiba is the first company to succeed in combining 16 pieces of 32Gbit NAND chips, and applied advanced chip thinning and layering technologies to realize individual chips that are only 30 micrometers thick. Full compliance with the JEDEC/MMCA Version 4.4(V4.4) standard for embedded MultiMediaCards supports standard interfacing and simplifies embedding in products, reducing development burdens on product manufacturers. Toshiba offers a comprehensive line-up of single-package embedded NAND Flash memories in densities ranging from 2GB to 64GB. All integrate a controller to manage basic control functions for NAND applications, and are compatible with the latest e-MMC standard and its new features, including defining multiple storage areas and enhanced security features.

Transcend Information, Inc., a worldwide leader in storage and multimedia products, today announced the expansion of its flash card product line with the introduction of high-capacity 400X CompactFlash cards with capacities ranging up to 64 GB. The new 400X CF cards also feature high-speed transfer rates up to 90 MB/s read and 60 MB/s write, ensuring maximum performance when used with today's high resolution imaging equipment.

With storage capacities ranging from 16GB to an enormous 64GB, Transcend's 400X CF cards allow digital camera users to take thousands of photos at a time without the inconvenience of switching cards. The 64GB 400X CF card, for instance, can capture more than 13,000 still images (with a 10 megapixel camera) and record over three hours of Full HD video (1920x1080 at 38.6Mbps), allowing users of digital single lens reflex cameras (DSLR) and HD video camcorders to take full advantage of their high-resolution equipment.

Lexar Media, a leading global provider of memory products for digital media, today announced it will offer the Lexar Professional 600x CompactFlash (CF) card, a new memory card that provides enhanced speed and performance for professional photographers and advanced photo enthusiasts capturing high-definition images and videos on digital SLRs. The Lexar Professional 600x CF memory card will offer increased speed and performance, with a guaranteed minimum sustained write speed capability of 600x (90MB/s) when paired with a UDMA 6 enabled device. In addition, the Lexar Professional 600x CF memory card increases workflow with minimum sustained read speeds of 533x (80MB/s), or faster when paired with a UDMA 6-enabled reader such as the new Lexar Professional ExpressCard CompactFlash Reader.

Available in 8GB, 16GB, and 32GB capacities, the Lexar Professional 600x CF card will significantly improve in-camera performance by rapidly clearing a camera's buffer and making fast cameras even faster so photographers can keep shooting. In addition, increased image transfer speeds from card-to-computer will help reduce post-production time and enable shooters to focus on the business of photography. For additional information about the Lexar Professional 600x CF card or Lexar Professional ExpressCard CompactFlash reader, visit Lexar.

The rapid advances in computer processing technology has seen CPU and memory speeds outstrip that of conventional mechanical hard disks. This is why it is increasingly being replaced by newer Solid State Disk (SSD) technology. To meet the overclocking needs of high-level enthusiasts, Team Group Inc. has once again leveraged its extensive technical expertise to launch the all-new Xtreem SSD series. First in the series are the Xtreem G1 and Xtreem R-type. In addition to being quiet, light, energy-saving and shock resistant, the Xtreem G1 and R-type pushes SSD read speeds to a breath-taking 260MB/sec and write speeds to a respectable 180Mb/sec. Compared to thick, heavy conventional 7200RPM HDDs with a read speed of just 80MB/sec and write speed of just 60MB/sec, Team's Xtreem SSD is a Ferrari that easily pushes the edges of the speed envelope.

Micron Technology, today announced its high-density portfolio of block abstracted (BA) NAND flash memory for use in personal media players and other applications. Utilizing Micron's industry-leading 34nm process technology, BA NAND is a single-package solution-combining MLC NAND with a memory controller that eliminates the need for controllers/systems to undergo arduous re-designs in order to adopt successive generations of NAND.
Currently, most NAND flash memory host controllers are tasked with managing critical NAND functions such as block management and wear-leveling algorithms, and providing adequate error correction code (ECC) coverage to assure system reliability. However, because these features are becoming more advanced with every generation of NAND, designers are required to keep up with the latest innovations in order for their chipsets to properly manage NAND and assure reliable system operation.

Building on its leadership in multi-level cell (MLC) technology, SanDisk Corporation today announced that it will begin mass-production of the world's first high performance 4-bits-per-cell (X4) flash memory. Using 43-nanometer (nm) process technology, this breakthrough enables 64-gigabit (Gb) memory in a single die - the highest capacity in the industry and suitable for the most demanding storage applications. SanDisk has also produced an advanced X4 controller, which is necessary to effectively manage the complexities and performance requirements of X4 memory. The X4 memory chip combines with the X4 controller chip in a multi-chip package (MCP) to provide a complete, integrated and low-cost storage solution.

Spansion Inc., announced that its Japanese subsidiary, Spansion Japan Ltd., has entered into a proceeding under the Corporate Reorganization Law (Kaisha Kosei Ho) of Japan. Spansion Japan Ltd. voluntarily chose to enter the proceeding to obtain protection from its creditors while it continues its restructuring efforts. This action does not include any of Spansion's other subsidiaries or their operations outside of Japan.

Spansion Inc. does not expect the filing in Japan to materially affect its global operations. Spansion Japan Ltd. will continue its operations and intends to pay, in a timely manner, for all goods and services that it obtains after the date of filing.

Kingston Digital, Inc., the Flash memory affiliate of Kingston Technology Company, Inc., announced today it is shipping the first two products in its SSDNow line of solid-state drives (SSD) with the SSDNow E Series and SSDNow M Series. Kingston is targeting its SSDs to Fortune 1000 companies and select vertical markets. The SSDNow E Series is specifically designed for the enterprise server environment while the SSDNow M Series is built for the road warrior who demands ultimate performance from a notebook PC. The Kingston SSDNow E and M Series use Intel's solid-state drives, which are the best-performing drives on the market.

"We are thrilled to enter the solid-state drive market with our SSDNow E and M Series SSDs. The combination of the fastest SSDs in the world along with Kingston's tremendous distribution capabilities and legendary customer service will position us to succeed in this arena," said Mark Leathem, director of Flash business development, Kingston Digital. "The performance capabilities of these first two offerings are off the charts and our enterprise customers will be very pleased to use them in servers and corporate laptop computers."

Samsung was hit on Monday by two separate patent infringement complaints issued from Spansion Inc., the world's No. 3 maker of flash memory chips by revenue. The complaints were filed with both the International Trade Commission (ITC) and the U.S. District Court in Delaware. Sunnyvale-based Spansion claims that more than "one hundred million mp3 players, cell phones, digital cameras and other consumer electronic devices" are made with Samsung flash memory chips that violate Spansion patents. As a result, over $30 billion worth of Samsung products that contain patented Spansion technologies were sold over the past five years.
"Spansion has patents that are fundamental to flash memory. Samsung itself has cited these patents many times in its own patent filings, underscoring industry acceptance of the fundamental nature of Spansion's (intellectual property)," Robert Melendres, Spansion's executive vice president and general counsel, said in a statement.
Samsung defended itself, saying that it "forbids infringement and unauthorized use" of the intellectual property and "plans to respond actively to this litigation," according to Lee Eun-hee, a company spokeswoman. Spansion is now seeking for damages and for the court to ban sales in the U.S. of products with the affected Samsung chips.

Toshiba Corporation today announced that Toshiba and SanDisk have signed a non-binding memorandum of understanding on the reallocation of wafer output and equipment ownership and funding at their two joint ventures producing NAND flash memory on 300 millimeter (mm) wafers at Toshiba's Yokkaichi Operations in Japan, in response to a proposal from SanDisk. The move is designed to enhance the production flexibility of NAND flash memory in line with the rapidly changing marketplace and to optimize each company's business strategies. The details will be set forth in definitive agreements.

Toshiba Corporation today announced the launch of 32GB embedded NAND flash memory modules that offer the largest density yet announced plus full compliance with the e-MMC(1) and eSD(2) standards. The embedded devices are designed for application in mobile digital consumer products, including mobile phones and video cameras. Samples will be available in September 2008, and mass production will start in the fourth quarter.

OCZ Technology Group, a worldwide leader in innovative, ultra-high performance and high reliability memory, today announced the all-new Diesel USB 2.0 Flash drive that made waves at Computex earlier this month. OCZ's latest offering harnesses a sleek and compact design coupled with high capacities you wouldn't expect in such a small form factor. With reliability, affordability, and maximum storage capabilities, the OCZ Diesel is the affordable choice for students, professionals, and other on-the-go computer users.

Toshiba Corporation today announced that it has developed a new double tunneling layer technology applicable to future 10nm generation flash memories. This elemental technology opens the way for memory devices with densities of over 100 gigabits in the 10nm generation, which lies four generations ahead.

SanDisk, a company well known for developing and manufacturing flash-based storage solutions, is suing 25 companies including LG Electronics for allegedly infringing patents used in removable flash storage products such as MP3 players and USB flash drives. The company has filed two lawsuits, one for five patent infringements and the other for two patent infringements, as well as filing a complaint with the US International Trade Commission asking to have the companies being accused barred from exporting their products to the USA. Other companies involved include Buffalo, Apacer Technology and Kingston, and if the case is successful it could see a rise in the price of flash-based storage such as CompactFlash cards.