Intel Ready with 144-layer 3D NAND On its Own, Talks 4-layer 3DXP, "Alder Stream" and "Keystone Harbor"
Intel's memory and storage products division now has a completely independent NAND flash technology development team post its split with Micron Technology, with which it was part of the IMFlash Technologies joint-venture. Intel is close to gaining a technological lead over Micron with a new 144-layer 3D NAND flash chip which will ship roughly around the time Micron begins pushing out its 128-layer 3D NAND chips. SK Hynix will begin shipping its 128-layer 3D NAND flash chips later this year. KIOXIA will put out 112-layer chips before the turn of the year. YMTC is developing its portfolio at a breakneck pace.
The 144-layer 3D NAND flash chip by Intel can handle up to four bits per cell (QLC), and can be configured to function as TLC or SLC, at lower densities. Intel will launch its first SSD based on this 144-layer QLC NAND flash chip, codenamed "Keystone Harbor," later this year. Development is underway at Intel for PLC (5 bits per cell) technology, which should drive up densities by 25 percent. Intel is also close to launching its second generation 3D X-point memory technology.
The 144-layer 3D NAND flash chip by Intel can handle up to four bits per cell (QLC), and can be configured to function as TLC or SLC, at lower densities. Intel will launch its first SSD based on this 144-layer QLC NAND flash chip, codenamed "Keystone Harbor," later this year. Development is underway at Intel for PLC (5 bits per cell) technology, which should drive up densities by 25 percent. Intel is also close to launching its second generation 3D X-point memory technology.
