An Innovate UK project worth £1.1M has been awarded to the Lancaster University spinout firm Quinas, the global semiconductor company IQE and Lancaster and Cardiff Universities. Quinas will coordinate the ambitious project which is the first step towards volume production of the universal computer memory ULTRARAM invented by Lancaster Physics Professor Manus Hayne.

ULTRARAM has extraordinary properties, combining the non-volatility of a data storage memory, like flash, with the speed, energy-efficiency, and endurance of a working memory, like DRAM. Most of the funding for the one-year project will be spent at IQE which will scale up the manufacture of compound semiconductor layers from Lancaster University to an industrial process at the Cardiff based firm. This will involve IQE developing advanced capability for growth of the compound semiconductors gallium antimonide and aluminium antimonide for the first time. The project follows significant investment to boost the UK semiconductor industry and the establishment of the world's first compound semiconductor cluster in South Wales.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced it is nearing completion of the next version of its highly anticipated High Bandwidth Memory (HBM) DRAM standard: HBM4. Designed as an evolutionary step beyond the currently published HBM3 standard, HBM4 aims to further enhance data processing rates while maintaining essential features such as higher bandwidth, lower power consumption, and increased capacity per die and/or stack. These advancements are vital for applications that require efficient handling of large datasets and complex calculations, including generative artificial intelligence (AI), high-performance computing, high-end graphics cards, and servers.

HBM4 is set to introduce a doubled channel count per stack compared to HBM3, with a larger physical footprint. To support device compatibility, the standard ensures that a single controller can work with both HBM3 and HBM4 if needed. Different configurations will require various interposers to accommodate the differing footprints. HBM4 will specify 24 Gb and 32 Gb layers, with options for supporting 4-high, 8-high, 12-high and 16-high TSV stacks. The committee has initial agreement on speeds bins up to 6.4 Gbps with discussion ongoing for higher frequencies.

As memory prices and volumes increase, manufacturers Nanya and Winbond have ceased the production cuts they implemented last year, with production now back to normal levels. Market research agencies and supply chain analysts indicate that memory shipments are expected to continue recovering in Q3 2024. Currently, memory factories are operating at a capacity utilization rate of 90% to full capacity, which is significantly higher than the 60% to 70% capacity utilization rate of wafer foundries with mature processes. Last year, Nanya adjusted its production volume reducing it by up to 20%. This year, production has gradually increased, reaching 70% to over 80% in the second quarter, and has now resumed normal levels.

Nanya anticipates that DRAM market conditions and prices will improve quarter by quarter, with the overall industry trending positively, potentially turning losses into profits in the third quarter. Nanya announced yesterday that its consolidated revenue for June was 3.363 billion yuan, marking a monthly increase of 0.35% and an annual increase of 36.83%, setting a high for the year. The cumulative consolidated revenue for the first half of the year was 19.424 billion yuan, a 44.4% increase compared to the same period last year. Nanya will hold a press conference on July 10 to announce its second-quarter financial results and operating outlook.

South Korean startup Panmnesia has unveiled an interesting solution to address the memory limitations of modern GPUs. The company has developed a low-latency Compute Express Link (CXL) IP that could help expand GPU memory with external add-in card. Current GPU-accelerated applications in AI and HPC are constrained by the set amount of memory built into GPUs. With data sizes growing by 3x yearly, GPU networks must keep getting larger just to fit the application in the local memory, benefiting latency and token generation. Panmnesia's proposed approach to fix this leverages the CXL protocol to expand GPU memory capacity using PCIe-connected DRAM or even SSDs. The company has overcome significant technical hurdles, including the absence of CXL logic fabric in GPUs and the limitations of existing unified virtual memory (UVM) systems.

At the heart of Panmnesia's solution is a CXL 3.1-compliant root complex with multiple root ports and a host bridge featuring a host-managed device memory (HDM) decoder. This sophisticated system effectively tricks the GPU's memory subsystem into treating PCIe-connected memory as native system memory. Extensive testing has demonstrated impressive results. Panmnesia's CXL solution, CXL-Opt, achieved two-digit nanosecond round-trip latency, significantly outperforming both UVM and earlier CXL prototypes. In GPU kernel execution tests, CXL-Opt showed execution times up to 3.22 times faster than UVM. Older CXL memory extenders recorded around 250 nanoseconds round trip latency, with CXL-Opt potentially achieving less than 80 nanoseconds. As with CXL, the problem is usually that the memory pools add up latency and performance degrades, while these CXL extenders tend to add to the cost model as well. However, the Panmnesia CXL-Opt could find a use case, and we are waiting to see if anyone adopts this in their infrastructure.Below are some benchmarks by Panmnesia, as well as the architecture of the CXL-Opt.

South Korean giant SK Group has unveiled plans for substantial investments in AI and semiconductor technologies worth almost $75 billion. SK Group subsidiary, SK Hynix, will lead this initiative with a staggering 103 trillion won ($74.6 billion) investment over the next three years, with plans to realize the investment by 2028. This commitment is in addition to the ongoing construction of a $90 billion mega fab complex in Gyeonggi Province for cutting-edge memory production. SK Group has further pledged an additional $58 billion, bringing the total investment to a whopping $133 billion. This capital infusion aims to enhance the group's competitiveness in the AI value chain while funding operations across its 175 subsidiaries, including SK Hynix.

While specific details remain undisclosed, SK Group is reportedly exploring various options, including potential mergers and divestments. SK Group has signaled that business practices need change amid shifting geopolitical situations and the massive boost that AI is bringing to the overall economy. We may see more interesting products from SK Group in the coming years as it potentially enters new markets centered around AI. This strategic pivot comes after SK Hynix reported its first loss in a decade in 2022. However, the company has since shown signs of recovery, fueled by the surging demand for memory solutions for AI chips. The company currently has a 35% share of the global DRAM market and plans to have an even stronger presence in the coming years. The massive investment aligns with the South Korean government's recently announced $19 billion support package for the domestic semiconductor industry, which will be distributed across companies like SK Hynix and Samsung.

AMD's upcoming Ryzen 9000 series "Granite Ridge" desktop processors based on the "Zen 5" microarchitecture will see a slight improvement in memory overclocking capabilities. A chiplet-based processor, just like the Ryzen 7000 "Raphael," "Granite Ridge" combines one or two "Zen 5" CCDs, each built on the TSMC 4 nm process, with a client I/O die (cIOD) built on the 6 nm node. The cIOD of "Granite Ridge" appears to be almost identical to that of "Raphael." This is the chiplet that contains the processor's DDR5 memory controllers.

As part of the update, Ryzen 9000 "Granite Ridge" should be able to run DDR5-6400 with a 1:1 ratio between the MCLK and FCLK domains. This is a slight increase from the DDR5-6000 sweetspot speed of Ryzen 7000 "Raphael" processors. AMD is reportedly making it possible for motherboard manufacturers and prebuilt OEMs to enable a 1:2 ratio, making it possible to run high memory speeds such as DDR5-8000, although performance returns with memory speeds would begin to diminish beyond the DDR5-6400 @ 1:1 setting. Memory manufacturers should launch a new wave of DDR5 memory kits with AMD EXPO profiles for DDR5-6400.

Micron has announced more precise timeframes for the commencement of operations at its two new memory facilities in the United States during its Q3 FY2024 results presentation. The company expects these fabs, located in Idaho and New York, to begin production between late 2026 and 2029. The Idaho fab, currently under construction near Boise, is slated to start operations between September 2026 and September 2027. Meanwhile, the New York facility is projected to come online in the calendar year 2028 or later, pending the completion of regulatory and permitting processes. These timelines align with Micron's original plans announced in 2022 despite recent spending optimizations. The company emphasizes that these investments are crucial to support supply growth in the latter half of this decade.

Micron's capital expenditure for FY2024 is set at approximately $8 billion, with a planned increase to around $12 billion in FY2025. This substantial rise in spending, targeting a mid-30s percentage of revenue, will support various technological advancements and facility expansions. A substantial portion of this increased investment - over $2 billion - will be dedicated to constructing the new fabs in Idaho and New York. Additional funds will support high-bandwidth memory assembly and testing, as well as the development of other fabrication and back-end facilities. Sanjay Mehrotra, Micron's CEO, underscored the importance of these investments, stating that the new capacity is essential to meet long-term demand and maintain the company's market position. He added that these expansions, combined with ongoing technology transitions in Asian facilities, will enable Micron to grow its memory bit supply in line with industry demand.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its third quarter of fiscal 2024, which ended May 30, 2024.

Fiscal Q3 2024 highlights

• Revenue of $6.81 billion versus $5.82 billion for the prior quarter and $3.75 billion for the same period last year
• GAAP net income of $332 million, or $0.30 per diluted share
• Non-GAAP net income of $702 million, or $0.62 per diluted share
• Operating cash flow of $2.48 billion versus $1.22 billion for the prior quarter and $24 million for the same period last year

"Robust AI demand and strong execution enabled Micron to drive 17% sequential revenue growth, exceeding our guidance range in fiscal Q3," said Sanjay Mehrotra, President and CEO of Micron Technology. "We are gaining share in high-margin products like High Bandwidth Memory (HBM), and our data center SSD revenue hit a record high, demonstrating the strength of our AI product portfolio across DRAM and NAND. We are excited about the expanding AI-driven opportunities ahead, and are well positioned to deliver a substantial revenue record in fiscal 2025."

KLEVV, the premier consumer memory and storage brand introduced by Essencore, is excited to unveil the brand-new FIT V DDR5 gaming memory with a sleek, ultra-low-profile design. KLEVV's FIT V DDR5 gaming memory modules are available in 16 GB (16 GB x1) and 32 GB (16 GB x2) kits, with diverse clock speeds of 5600MT/s, 6000 MT/s, and 6400 MT/s. Meticulously crafted for gamers, content creators, and casual users on a budget, these modules offer cutting-edge features and top-tier performance at an attractive price. They boast a streamlined, ultra-low-profile 33 mm form factor, made possible by an innovative aluminium heat spreader with a contemporary minimalist aesthetic, finished in an eye-catching white hue. This design significantly boosts performance and enhances the visual appeal of any build.

The FIT V DDR5 gaming memory modules offer cutting-edge features at an attractive price. Superior KLEVV memory technology, including a built-in PMIC, ensures consistent performance with efficient power delivery and dependability. KLEVV's signature multilayer PCB design improves signal strength and robustness. The FIT V DDR5 modules also incorporate a precision thermal sensor for optimal performance calibration and on-die ECC for effective error correction, ensuring peak functionality and reliability. The FIT V DDR5 gaming memory readily supports Intel XMP 3.0 and AMD EXPO technology to extract maximum performance.

Kingston today formally launched the FURY Renegade RGB Limited Edition DDR5 memory kits. These were shown at the company's Computex 2024 booth earlier this month. The module's design involves a two-tone die-cast metal shroud over the aluminium heat-spreaders, which are crowned by silicone diffusers for the RGB LEDs. The modules have a 19-preset lighting controller. You control the lighting using the first-party FURY CTRL software. Kingston says that the design of these modules are inspired by race cars.

The Kingston FURY Renegade RGB Limited Edition is available in only one density—48 GB (2x 24 GB kit), and in only one speed variant, DDR5-8000, with timings of CL36-48-48, and DRAM voltage of 1.45 V. The module also includes profiles for DDR5-7200 and DDR5-6400, with tighter timings. The modules pack an Intel XMP 3.0 SPD profile that enables the advertised speeds on Intel platforms. Kingston has extensively tested the modules on the latest Intel platforms, such as the 14th Gen Core "Raptor Lake Refresh" for compatibility with the advertised XMP speeds. The company didn't reveal pricing.

According to the leaked listing posted on X by user @Orlak29_, reports suggest that Pro versions of the AMD Ryzen 7 AI and Ryzen 9 AI are in the pipeline, with a potential game-changer in the form of the high-end "Strix Halo" model. The standout feature of the Strix Halo is its rumored support for up to 128 GB of RAM, a significant leap from AMD's current offerings. This massive memory capacity could prove valuable for AI workloads and data-intensive applications, potentially positioning AMD better against offerings from Intel and Qualcomm. Leaked diagrams hint at a unique design for the Strix Halo, featuring a chiplet layout reminiscent of a graphics card. The processor is reportedly surrounded by memory on three sides, enabling the massive 128 GB capacity.

While this top-tier model is expected to carry a premium price, it could find a ready market among professionals and enthusiasts demanding both raw processing power and extensive memory resources. On the performance front, rumors suggest the Strix Halo will boast up to 16 Zen 5 cores and a GPU with 40 Compute Units based on RDNA 3.5 architecture. This combination might rival the performance of high-end mobile GPUs like the RTX 4060 or even the RTX 4070 for laptops.
As with previous generations, AMD is expected to release Pro versions of these processors with additional features like ECC memory support.

The race is on for memory manufacturers to bring the next generation GDDR7 graphics memory into mass production. While rivals Samsung and Micron are aiming to have GDDR7 chips available in Q4 of 2024, South Korean semiconductor giant SK Hynix revealed at Computex 2024 that it won't kick off mass production until the first quarter of 2025. GDDR7 is the upcoming JEDEC standard for high-performance graphics memory, succeeding the current GDDR6 and GDDR6X specifications. The new tech promises significantly increased bandwidth and capacities to feed the appetites of next-wave GPUs and AI accelerators. At its Computex booth, SK Hynix showed off engineering samples of its forthcoming GDDR7 chips, with plans for both 16 Gb and 24 Gb densities.

The company is targeting blazing-fast 40 Gbps data transfer rates with its GDDR7 offerings, outpacing the 32 Gbps rates its competitors are starting with on 16 Gb parts. If realized, higher speeds could give SK Hynix an edge, at least initially. While trailing a quarter or two behind Micron and Samsung isn't ideal, SK Hynix claims having working samples now validates its design and allows partners to begin testing and qualification. Mass production timing for standardized memories also doesn't necessarily indicate a company is "late" - it simply means another vendor secured an earlier production window with a specific customer. The GDDR7 transition is critical for SK Hynix and others, given the insatiable demand for high-bandwidth memory to power AI, graphics, and other data-intensive workloads. Hitting its stated Q1 2025 mass production target could ensure SK Hynix doesn't fall too far behind in the high-stakes GDDR7 race, with faster and higher-density chips to potentially follow shortly after volume ramp.

According to sources familiar with the matter and reported by Bloomberg, the Biden administration is considering imposing further export controls to limit China's ability to acquire advanced semiconductor technologies crucial for developing AI systems. Gate-all-around (GAA) transistor technology and high-bandwidth memory (HBM) chips are at the center of the proposed restrictions. These cutting-edge components play a pivotal role in creating powerful AI accelerators. GAA transistors, a key feature in next-generation chips, promise substantial improvements in power efficiency and processing speeds. Meanwhile, HBM chips enable high-speed data transfer between a processor and memory. While existing sanctions prevent American firms from supplying Chinese companies with equipment for manufacturing leading-edge chips, concerns persist that China could still attain advanced capabilities through other means.

For instance, China's leading chipmaker, SMIC, could potentially integrate GAA transistors into its existing 7 nm process node, markedly enhancing performance. Access to HBM would further augment China's ability to develop AI accelerators on par with cutting-edge offerings from US firms. The reflections within the Biden administration show a strategic effort to preserve America's technological edge by denying China access to key semiconductor innovations. However, implementing such stringent export controls is a delicate balancing act, as it risks heightening tensions and prompting Chinese retaliation. No final decision has been made, and officials continue weighing the proposed restrictions' pros and cons. Nonetheless, the discussions highlight the pivotal role that semiconductor technology plays in the great power rivalry between the US and China, especially in the AI era.

SK hynix presented its leading AI memory solutions at COMPUTEX Taipei 2024 from June 4-7. As one of Asia's premier IT shows, COMPUTEX Taipei 2024 welcomed around 1,500 global participants including tech companies, venture capitalists, and accelerators under the theme "Connecting AI". Making its debut at the event, SK hynix underlined its position as a first mover and leading AI memory provider through its lineup of next-generation products.

"Connecting AI" With the Industry's Finest AI Memory Solutions
Themed "Memory, The Power of AI," SK hynix's booth featured its advanced AI server solutions, groundbreaking technologies for on-device AI PCs, and outstanding consumer SSD products. HBM3E, the fifth generation of HBM1, was among the AI server solutions on display. Offering industry-leading data processing speeds of 1.18 terabytes (TB) per second, vast capacity, and advanced heat dissipation capability, HBM3E is optimized to meet the requirements of AI servers and other applications. Another technology which has become crucial for AI servers is CXL as it can increase system bandwidth and processing capacity. SK hynix highlighted the strength of its CXL portfolio by presenting its CXL Memory Module-DDR5 (CMM-DDR5), which significantly expands system bandwidth and capacity compared to systems only equipped with DDR5. Other AI server solutions on display included the server DRAM products DDR5 RDIMM and MCR DIMM. In particular, SK hynix showcased its tall 128-gigabyte (GB) MCR DIMM for the first time at an exhibition.

On June 4th, COMPUTEX 2024 was successfully held at the Taipei Nangang Exhibition Center. Mnemonic Electronic Co., Ltd., the Taiwanese subsidiary of Longsys, showcased industry-leading high-capacity SSDs under the theme "Embracing the Era of High-Capacity SSDs." The products on display included the Mnemonic MS90 8TB SATA SSD, FORESEE ORCA 4836 series enterprise NVMe SSDs, FORESEE XP2300 PCIe Gen 4 SSDs, and rich product lines comprising embedded storage, memory modules, memory cards, and more. The company offers reliable industrial-grade, automotive-grade, and enterprise-grade storage products, providing high-capacity solutions for global users.

High-Capacity SSDs
For SSDs, Mnemonic Electronic presented products in various form factors and interfaces, including PCIe M.2, PCIe BGA, SATA M.2, and SATA 2.5-inch. The Mnemonic MS90 8 TB SATA SSD supports the SATA interface with a speed of up to 6 Gb/s (Gen 3) and is backward compatible with Gen 1 and Gen 2. It also supports various SATA low-power states (Partial/Sleep/Device Sleep) and can be used for nearline HDD replacement, surveillance, and high-speed rail systems.

Team Group at the 2024 Computex showcased its flagship gaming and overclocking memory kit, the T-Force Xtreem DDR5 series. The cooling solution features a heavy aluminium heat-spreader, with a diamond-cut T-Force logo. Besides the usual black and white colors, at Computex Team Group unveiled a pink version of its T-Force Xtreme. This DDR5 memory kit comes in capacities of 1x 16 GB, 2x 16 GB, 2x 24 GB, 2x 32 GB, and 2x 48 GB; and speeds ranging between DDR5-6400 to DDR5-7600.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is showcasing multiple high-speed overclocked DDR5 memory kits on live-demo systems featuring the latest Intel and AMD platforms at Computex 2024. Aiming to demonstrate the maximum overclocking potential of the latest G.SKILL DDR5 memory on the latest platforms, these live-demo builds feature DDR5 memory speeds of up to DDR5-10600 and a variety of high-performance motherboards from ASRock, ASUS, Gigabyte, and MSI.

DDR5-10600 32 GB (16 GB x2) - Extreme Memory Speed on Air
Aiming for the highest DDR5 memory speed possible, G.SKILL shows off a 32 GB (16 GB x2) capacity memory kit running at a whopping speed of DDR5-10600 with an AMD Ryzen 5 8500G processor and ASUS ROG Crosshair X670E GENE motherboard.

Kingston at the 2024 Computex showed us their latest gaming and overclocking PC memory products, under its FURY brand. The star attraction here, is the FURY Impact DDR5 CAMM2 module. Kingston is partnering with MSI to bring this standard to the gaming PC space, as part of its new Project Zero ecosystem. A DDR5 CAMM2 is basically a dual-channel (4 sub-channel) DDR5 memory-on-a-stick. The module has wiring for both the channels and all four sub-channels, and a total of two ranks (1R/DPC). The module sits on a land-grid, just like the processor, and is held in place by a series of screws. When installed, a CAMM2 looks a lot more discreet than a bunch of DIMMs that stick out perpendicularly to the plane of the motherboard.

Kingston DDR5 CAMM2 will come in typical dual-channel capacities, such as 32 GB; with typical speeds. The CAMM2 standard was originally designed for mainstream notebooks and mini-PC desktops, but MSI adapted it to an ATX desktop motherboard with its Project Zero backside connectivity. Next up, we have the FURY Renegade RGB DDR5 series, with its high DDR5 speeds, and plenty of RGB bling. Densities range between 16 GB (1x 16 GB) to 96 GB (2x 48 GB), with popular densities along the way, such as 2x 16 GB, and 2x 24 GB. Speeds range between DDR5-6000, all the way till DDR5-8000 (with XMP 3.0).

GeIL will feature at Computex 2024 the EVO V series and TUF GAMING ALLIANCE MEMORY with an Active Dual Fan Cooling System, ensuring optimal stability and performance. GeIL enhances memory stability and reliability with CKD (Client Clock Driver) chips in CUDIMM and CSODIMM products. The CAMM2 and LPCAMM2 modules offer faster speeds and larger capacities for next-gen compact devices, ideal for AI PCs and server applications requiring high capacity and quick access.

GeIL TUF GAMING ALLIANCE MEMORY
In addition to the well-known EVO V series, GeIL TUF GAMING ALLIANCE MEMORY includes the Active Dual Fan Cooling System design, which greatly helps heat dissipation. The enhanced cooling efficiency ensures optimal stability and performance under the most demanding conditions. To provide users with a variety of product options, GeIL TUF GAMING ALLIANCE MEMORY also offers an RGB SKU without fans. Both models will be demonstrated at GeIL's booth at Computex 2024.

GeIL - Golden Emperor International Ltd. - one of the world's leading PC components & peripheral manufacturers, today announces a new specification: DDR5-9000 CL40-54-54-112 32 GB (2 x 16 GB) optimized for AMD Ryzen 8000G series processors, providing the ultimate system performance for AMD enthusiasts.

Blazing Speed at DDR5-9000 CL40 1.45 V
With the blazing speed of DDR5 9000 MT/s, users can expect more responsive performance in the most demanding applications and games. The impressive specification of DDR5-9000 16 GB x 2 CL40-54-54-112 at 1.45 V is validated with AMD Ryzen 8000G series processors and the ASUS ROG CROSSHAIR X670E GENE motherboard, as shown in the screenshots below.

The Samsung Electronics Union is reportedly planning to strike on June 7, TrendForce reports that this strike will not impact DRAM and NAND Flash production, nor will it cause any shipment shortages. Additionally, the spot prices for DRAM and NAND Flash had been declining prior to the strike announcement, and there has been no change in this downtrend since the announcement.

Samsung's global share of DRAM and NAND Flash output in 2023 was 46.8% and 32.4%, respectively. Even though the South Korean plants account for all 46.8% of global DRAM production and about 17.8% of global NAND Flash production, TrendForce identifies four reasons why this strike will not impact production. Firstly, the strike involves employees at Samsung's headquarters in Seocho, Seoul, where union participation in higher, but these employees do not directly engage in production. Secondly, this strike is planned for only one day, which falls within the flexible scheduling range for production.

SK Hynix, leader in HBM3E memory, has now shared more details about HBM4E. Based on fresh reports by Wccftech and ET News, SK Hynix plans to make an HBM memory type that features multiple things like computing, caching, and network memory, all within the same package. This will make SK Hynix stand out from others. This idea is still in the early stages, but SK Hynix has started getting the design information it needs to support its goals. The reports say that SK Hynix wants to lay the groundwork for a versatile HBM with its upcoming HBM4 design. The company reportedly plans to include a memory controller on board, which will allow new computing abilities with its 7th generation HBM4E memory.

By using SK Hynix's method, everything will be unified as a single unit. This will not only make data transfer faster because there is less space between parts, but it will also make it more energy-efficient. Previously in April, SK Hynix announced that it has been working with TSMC to produce the next generation of HBM and improve how logic chips and HBM work together through advanced packaging. In late May, SK Hynix has disclosed yield details regarding HBM3E for the first time, the memory giant reporting successfully reducing the time needed for mass production of HBM3E chips by 50%, while getting closer to the target yield of 80%. The company plans to keep developing HBM4, which is expected to start mass production in 2026.

Micron Technology, a leader in innovative data center solutions, today announced it has achieved its qualification sample milestone for the Micron CZ120 memory expansion modules using Compute Express Link (CXL). Micron is the first in the industry to achieve this milestone, which accelerates the adoption of CXL solutions within the data center to tackle the growing memory challenges stemming from existing data-intensive workloads and emerging artificial intelligence (AI) and machine learning (ML) workloads.

Using a new and emerging CXL standard, the CZ120 required substantial hardware testing for reliability, quality and performance across CPU providers and OEMs, along with comprehensive software testing for compatibility and compliance with OS and hypervisor vendors. This achievement reflects the collaboration and commitment across the data center ecosystem to validate the advantages of CXL memory. By testing the combined products for interoperability and compatibility across hardware and software, the Micron CZ120 memory expansion modules satisfy the rigorous standards for reliability, quality and performance required by customers' data centers.

Beijing has doubled down on its push for semiconductor self-sufficiency with the establishment of a new $47.5 billion investment fund to accelerate growth in the domestic chip sector. The fund, officially registered on May 24th under the name "China Integrated Circuit Industry Investment Fund Phase III", represents the largest of three state-backed vehicles aimed at cultivating China's semiconductor capabilities. The announcement comes as tensions over advanced chip technology continue to escalate between the U.S. and China. Over the past couple years, Washington has steadily ratcheted up export controls on semiconductors to Beijing over national security concerns about potential military applications. These measures have lent new urgency to China's quest for self-sufficiency in chip design and manufacturing.

With a war chest of 344 billion yuan ($47.5 billion), the "Big Fund" dwarfs the combined capital of the first two semiconductor investment vehicles launched in 2014 and 2019. Officials have outlined a multipronged strategy targeting key bottlenecks, focusing on equipment for chip fabrication plants. The fund has bankrolled major projects such as flash memory maker Yangtze Memory Technologies and leading foundries like SMIC and Huahong. China's homegrown chip industry still needs to catch up to global leaders like Intel, Samsung, and TSMC. However, the immense scale of state-directed capital illustrates Beijing's unwavering commitment to developing a self-reliant supply chain for semiconductors—a technology viewed as indispensable for economic and military competitiveness. News of the "Big Fund" sent Chinese chip stocks surging over 3% on hopes of fresh financing tailwinds.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is excited to announce the highly anticipated Trident Z5 Royal series of high-performance overclock DDR5 memory. Featuring a mirrored-finish heat spreader in gold or silver color and a full-length crystalline light bar, the Trident Z5 Royal is the embodiment of high-class luxury of the flagship Trident Z5 product family.

Trident Z5 Royal marks the return of the popular luxury-class design to the new generation of DDR5 memory under the Trident Z5 design, inheriting from its DDR4 predecessor the lustrous mirrored-finish heat spreader in gold or silver color and a crystalline light bar design for a magnificent display of RGB lighting. Each heat spreader is CNC-cut from aluminium and electroplated for a stunning design befitting its Royal name.