KLEVV, the leading consumer memory and storage brand introduced by Essencore, today announces exciting updates to its DDR5 Gaming/OC memory lineup. The new releases include stylish color options for the FIT V and BOLT V series, enhanced performance with lower latency SKUs, and "Optimized for AMD" variants across its DDR5 OC models. This update boosts overall system efficiency and expands platform compatibility, offering gamers, creators, and professionals even more choices to elevate their systems.

KLEVV introduces two fresh color variations to its FIT V and BOLT V memory series, complementing a broader range of system designs. The FIT V series now features an elegant Jet Black edition, delivering a minimalist and understated aesthetic tailored for creators and professionals. Meanwhile, the BOLT V series now features an all new pure White edition, combining a bold, modern aesthetic alongside high-speed performance tailored for gamers.

Welinq, a leader in quantum networking technology, has launched the first commercial quantum memory designed specifically for quantum data centers with world-record performance. Quantum computing is reaching a turning point: with more than 100 individual quantum computers deployed in dedicated infrastructures, the next challenge is networking them into scalable, high-performance architectures.

Just as classical data centers rely on distributed computing and high-speed interconnects, the future of quantum computing depends on optical networking and resource sharing between quantum processors. Welinq's quantum memory acts as the backbone of this infrastructure, making it possible to link quantum processors into powerful, scalable networks.

G.Skill International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is announcing a new high-capacity, low-latency DDR5 specification of DDR5-6000 CL26 with a total of 96 GB (48 GB x2) kit capacity, intended for the AMD AM5 platform. Designed for PC enthusiasts, gamers, professionals, and AI applications who are looking for high performance, this new memory kit enables low-latency performance at high kit capacities on the latest AMD computing platforms.

High-Capacity & Low-Latency Performance DDR5 Memory for AMD AM5
G.Skill continues to push the limits of DDR5 memory with the new DDR5-6000 CL26 at a high kit capacity of 96 GB (48 GB x2). Featuring a very low latency timing of CL26-36-36-96, this memory kit is engineered to provide efficiency and responsiveness for high-performance computing tasks, such as content creation, 3D modeling, or AI applications, on the latest AMD AM5 platforms. See below for a Memtest validation screenshots on the ASUS ROG CROSSHAIR X870E HERO motherboard with the AMD Ryzen 9 9950X3D desktop processor, as well as on the MSI MPG X870E CARBON WIFI motherboard with the AMD Ryzen 9 9900X desktop processor.

SK hynix Inc. announced today that it will participate in the GTC 2025, a global AI conference taking place March 17-21 in San Jose, California, with a booth titled "Memory, Powering AI and Tomorrow". The company will present HBM and other memory products for AI data centers and on-device and memory solutions for automotive business essential for AI era.

Among the industry-leading AI memory technology to be displayed at the show are 12-high HBM3E and SOCAMM (Small Outline Compression Attached Memory Module), a new memory standard for AI servers.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is excited to announce the release of three new DDR5 memory specifications with AMD EXPO OC profiles for AMD platforms, including an extreme speed with low-latency at DDR5-8000 CL36-48-48 48 GB (24 GB x2), large-capacity & low-latency DDR5-6000 CL28-36-36 192 GB (48 GB x4), and a new DDR5-6000 CL26-39-39 with 48 GB (24 GB x2) kit capacity. Designed for PC enthusiasts, gamers, content creators, and AI applications, these cutting-edge DDR5 memory kits push the boundaries of speed, latency, and capacity on AMD AM5 platforms.

Pushing the Limits with Extreme DDR5-8000 CL36 24 GB x2
For users seeking top-tier performance, the new DDR5-8000 CL36-48-48 24 GB x2 memory kit with AMD EXPO OC profile is engineered for ultra-high memory speed at low CL36 latency timings. This extreme-speed and low-latency combination is ideal for exceptional system responsiveness and multitasking performance. See below for the Memtest validation screenshot showcasing its stability on the ASUS ROG Crosshair X870E Hero motherboard and AMD Ryzen 9 9900X desktop processor.

On March 3, Longsys, a branded semiconductor memory enterprise, made its first-ever appearance at MWC 2025 in Barcelona. Under the theme "New Mode of Storage Empowering Global Mobility", it showcased a series of innovative storage products, attracting widespread attention.

PTM Business Model: Full-Stack Customization Service
The Product Technology Manufacturing (PTM) model was a major highlight, showcasing Longsys' full-stack customization capabilities—from in-house controller development and product design to rigorous testing and intelligent manufacturing.

Biwin, a world-renowned innovator in cutting-edge memory and storage solutions, proudly introduces the Biwin Black Opal OC Lab Gold Edition DW100 RGB DDR5 192 GB Memory Kit (48 GB x 4), available in DDR5-6400 CL30-39-39-108 1.4 V and DDR5-6000 CL28-36-36-102 1.4 V specifications. Breaking the capacity limits of traditional consumer memory, this ultra-large 192 GB kit offers the performance boost needed for AI computing, large-scale data processing, and next-gen computing.

Push Memory Performance with Revolutionary 192 GB Memory Kit
Biwin Black Opal DW100, delivering an ultra-high-capacity 192 GB (48 GB x4) configuration, redefines what's possible with desktop memory and exceptional memory bandwidth, stability, and efficiency. This breakthrough enables users to take full advantage of DDR5's enhanced data throughput to power fast, out-of-the-box speeds for AI computing, large language models (LLMs), generative AI, and edge computing, and other data-rich workloads.

Team Group Inc. announced today that it will participate in Embedded World 2025, a premier global event for embedded technology. The company will unveil its latest industrial-grade solutions, spanning three key product lines designed to meet the evolving demands of AI, high-performance computing, and data security. These innovations demonstrate Team Group's commitment to advancing efficiency and stability in industrial applications while laying a solid foundation for future technological progress.

Highlighting its leadership in embedded applications and groundbreaking technology, Team Group's D500R WORM Memory Card has been recognized with the prestigious Embedded Award. Join Team Group from March 11-13, 2025, at NürnbergMesse Convention Center in Nuremberg, Germany (Hall 5 / 5-239) to explore the latest breakthroughs and optimal solutions in industrial solutions.

Numemory has introduced the NM101, a 64 Gb storage-class memory module that uses technology similar to Intel's now-discontinued Optane architecture. The device implements phase-change memory and crossbar technology in a 3D selector-only memory structure, matching Optane's 3200 MT/s transfer rate specification. The technical architecture diverges from Intel's implementation by using a single selector in its cross-point structure rather than the dual-selector approach of 3D XPoint memory. Operating at 1.2 V with an X8 bus width, the NM101 uses 3D stacking to achieve claimed performance metrics of 10x faster read/write speeds than NAND flash. Xincun Technology, which established the Numemory division in Wuhan in 2022, holds 273 patents related to the technology, including 60 international and 213 Chinese patents. The company's R&D team of 144 engineers has developed the architecture since 2019, three years before Intel ended its Optane program.

Production plans specify an initial manufacturing target of 10,000 units monthly by the end of 2025. Guao Technology has committed ¥10 billion to establish production facilities in Zhejiang province, with additional funding from the Anji county government. The NM101's operating temperature range spans 0-70°C, suitable for standard data center environments. While the device's specifications suggest the potential for data center deployment, specific IOPS and latency metrics remain unpublished. Initial production will serve domestic Chinese servers and storage manufacturers. The technology's viability in mass production remains to be demonstrated, particularly given the manufacturing challenges that contributed to Optane's market exit. The Chinese internal market is massive, so serving only domestic companies could be enough for Numemory at the beginning. If the company continues development, worldwide expansion could pick up where Optane stopped.

Kioxia Corporation and Sandisk Corporation have pioneered a state-of-the-art 3D flash memory technology, setting the industry benchmark with a 4.8 Gb/s NAND interface speed, superior power efficiency, and heightened density

Unveiled at ISSCC 2025, the new 3D flash memory innovation, together with the companies' revolutionary CBA (CMOS directly Bonded to Array) technology, incorporates one of the latest interface standards, Toggle DDR6.0 for NAND flash memory, and leverages the SCA (Separate Command Address) protocol, a novel command address input method of its interface, and PI-LTT (Power Isolated Low-Tapped Termination) technology, which is instrumental in further reducing power consumption.

The global semiconductor manufacturing industry closed 2024 with strong fourth quarter results and solid year-on-year (YoY) growth across most of the key industry segments, SEMI announced today in its Q4 2024 publication of the Semiconductor Manufacturing Monitor (SMM) Report, prepared in partnership with TechInsights. The industry outlook is cautiously optimistic at the start of 2025 as seasonality and macroeconomic uncertainty may impede near-term growth despite momentum from strong investments related to AI applications.

After declining in the first half of 2024, electronics sales bounced back later in the year resulting in a 2% annual increase. Electronics sales grew 4% YoY in Q4 2024 and are expected to see a 1% YoY increase in Q1 2025 impacted by seasonality. Integrated circuit (IC) sales rose by 29% YoY in Q4 2024 and continued growth is expected in Q1 2025 with a 23% increase YoY as AI-fueled demand continues boosting shipments of high-performance computing (HPC) and datacenter memory chips.

SK hynix Inc. announced today that it has acquired TISAX, the global automobile industry information security certification, for the first time in the memory industry. SK hynix has obtained TISAX for all domestic sites located in Icheon, Bundang and Cheongju, and has been internationally accepted for the security capabilities required by the global automobile industry. Through this, the company aims to accelerate the development of high-performance memory solutions essential for realizing AI-based future automobile technology.

With the expansion of the electric vehicle market, autonomous driving, and the development of connected car technology, the importance of electronic parts is growing rapidly. In line with these changes, automotive semiconductors, which are widely used in electric equipment, are positioned as major components of automobiles. In particular, automotive semiconductors are applied to key safety systems of automobiles such as ADAS, brake systems and engine control, requiring a higher level of reliability than general semiconductors. In addition, as hacking and malicious code attacks targeting automobiles have increased recently, systematic security management in the manufacturing process is being emphasized as well as strengthening the performance of semiconductors themselves.

Scientists have made a big step forward in data storage technology, they've managed to improve the manufacturing process for 3D NAND flash memory. This type of storage technology stacks memory cells on top of each other to obtain higher data density. A team of experts from Lam Research, the University of Colorado Boulder, and Princeton Plasma Physics Lab came up with a better way to etch (the process of carving holes into alternating layers of silicon oxide and silicon nitride) by using hydrogen fluoride plasma. This new method cuts vertical channels through silicon-based materials twice as fast as before achieving 640 nanometers in just one minute.

The team found out that mixing in certain chemicals like phosphorus trifluoride helps the etching process. They also learned that some byproducts can slow down etching, but adding water can help fix this problem. "The salt can decompose at a lower temperature when water is present, which can accelerate etching", said Yuri Barsukov, a former PPPL researcher now working at Lam Research. This breakthrough is important as the need for data storage received a huge boost with the rise of AI programs, that need tons of storage.

G.Skill International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is announcing the release of high-speed, low-latency DDR5-6800 CL32 memory specification with large kit capacity of up to 96 GB (2x 48 GB), as well as DDR5-6400 CL28 32 GB (2x 16 GB) high-performance memory specification. These new memory specifications will be available under the G.SKILL Trident Z5 Royal, Trident Z5 RGB, and Ripjaws M5 RGB series, with Intel XMP 3.0 memory overclock profile support.

As G.SKILL continues to push memory performance to higher limits, an ideal memory solution for overclocking enthusiasts who are looking for both large capacity and high performance is born at DDR5-6800 CL32-42-42 at up to 96 GB (2x 48 GB). This new specification has been validated on both Intel Z790 and Z890 platforms. Please refer to the screenshots below for Memtest validation on the ASUS ROG Maximus Z890 Hero motherboard with the Intel Core Ultra 7 265K desktop processor, and the ASUS ROG Maximus Z790 Dark Hero motherboard with the Intel Core i9-14900K desktop processor.

Samsung Electronics today reported financial results for the fourth quarter and the fiscal year 2024. The Company posted KRW 75.8 trillion in consolidated revenue and KRW 6.5 trillion in operating profit in the quarter ended December 31, 2024. For the full year, it reported KRW 300.9 trillion in annual revenue and KRW 32.7 trillion in operating profit.

Although fourth quarter revenue and operating profit decreased on a quarter-on-quarter (QoQ) basis, annual revenue reached the second-highest on record, surpassed only in 2022. Meanwhile, operating profit was down KRW 2.7 trillion QoQ, due to soft market conditions especially for IT products, and an increase in expenditures including R&D. In the first quarter of 2025, while overall earnings improvement may be limited due to weakness in the semiconductors business, the Company aims to pursue growth through increased sales of smartphones with differentiated AI experiences, as well as premium products in the Device eXperience (DX) Division.

New technology from Chalmers University of Technology and the University of Gothenburg, Sweden, is helping the EU establish its own competitive computer manufacturing industry. Researchers have developed components critical for optimising on-chip memory, a key factor in enhancing the performance of next-generation computers.

The research leader, Professor Per Stenström, along with colleagues, has discovered new ways to make cache memory work smarter. A cache is a local memory that temporarily stores frequently accessed data, improving a computer's speed and performance. "Our solution enables computers to retrieve data significantly faster than before, as the cache can manage far more processing elements (PEs) than most existing systems. This makes it possible to meet the demands of tomorrow's powerful computers," says Per Stenström, Professor at the Department of Computer Science and Engineering at Chalmers University of Technology and the University of Gothenburg.

ChangXin Memory Technology (CXMT) is playing catch up with competitors based in neighboring nations—as reported earlier today, this Chinese memory module manufacturer is making advancements in the field of commercial DDR5 products. Reports from the region suggest that a well-known motherboard manufacturer has embraced some of ChangXin new portfolio. According to a recent ITHome article, MSI has implemented a multitude of optimizations for new-ish Intel "Arrow Lake" Core Ultra Series 2 CPU-oriented motherboards—notably the MAG B860 TOMAHAWK WIFI, MAG B860M MORTAR WIFI, and PRO B860M-A WIFI models.

The publication provided evidence of MSI enabling transfer rates of 6800 MT/s across four engaged modules—a welcome step up from the usual twin-stick setup. ITHome also points out that the motherboard specialist has prepared a new BIOS version for B860 chipset mainboards: "specially optimized for the recently popular DDR5 domestic memory particles of ChangXin Storage, which undoubtedly gives the gaming community (in China) more choices." MSI appears to be the first major international vendor to enable support for CXMT's DDR5 modules—thus, representing a significant achievement for the Chinese memory industry.

Montage Technology today announced that it has successfully sampled its Gen 2 Multiplexed Rank Registering Clock Driver (MRCD) and Multiplexed Rank Data Buffer (MDB) chipset to leading global memory manufacturers. Designed for DDR5 Multiplexed Rank DIMM (MRDIMM), this new chipset supports data rates up to 12800 MT/s, delivering exceptional memory performance for next-generation computing platforms.

The release comes at a crucial time, as AI and big data analytics drive increasing demands for memory bandwidth in data centers. MRDIMM technology has emerged as a key solution to address this challenge, particularly as server processors continue to increase in core count.

Numem, an innovator focused on accelerating memory for AI workloads, will be at the upcoming Chiplet Summit to showcase its high-performance solutions. By accelerating the delivery of data via new memory subsystem designs, Numem solutions are re-architecting the hierarchy of AI memory tiers to eliminate the bottlenecks that negatively impact power and performance.

The rapid growth of AI workloads and AI Processor/GPUs are exacerbating the memory bottleneck caused by the slowing performance improvements and scalability of SRAM and DRAM - presenting a major obstacle to maximizing system performance. To overcome this, there is a pressing need for intelligent memory solutions that offer higher power efficiency and greater bandwidth, coupled with a reevaluation of traditional memory architectures.

SK hynix has sped up its HBM4 development plans, according to a report from ZDNet. The company wants to start shipping HBM4 samples to NVIDIA this June, which is earlier than the original timeline. SK hynix hopes to start supplying products by the end of Q3 2025, this push likely aims to get a head start in the next-gen HBM market. To meet this sped-up schedule, SK hynix has set up a special HBM4 development team to supply NVIDIA. Industry sources indicated on January 15th that SK Hynix plans to deliver its first customer samples of HBM4 in early June this year. The company hit a big milestone when it wrapped up the HBM4 tapeout in Q4 2024, the last design step.

HBM4 marks the sixth iteration of high-bandwidth memory tech using stacked DRAM architecture. It comes after HBM3E, the current fifth-gen version, with large-scale production likely to kick off in late 2025 at the earliest. HBM4 boasts a big leap forward doubling data transfer ability with 2,048 I/O channels up from its forerunner. NVIDIA planned to use 12-layer stacked HBM4 in its 2026 "Rubin" line of powerful GPUs. However, NVIDIA has moved up its timeline for "Rubin" aiming to launch in late 2025.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is announcing the release of low latency DDR5-6400 CL30-39-39-102 memory specification in high-capacity kit configurations, up to 96 GB (2x 48 GB) kit capacity. This high performance memory kit specification will be available under the Trident Z5 RGB and Trident Z5 Royal series, with Intel XMP 3.0 memory overclock profile support.

The G.SKILL DDR5-6400 CL30 memory kit at 96 GB (2x 48 GB) combines high-capacity and low-latency to enable higher performance for memory intensive platforms and uses. The screenshot below shows this 96 GB (2x 48 GB) memory kit operating at DDR5-6400 CL30-39-39-102 with the ASUS ROG Maximus Z890 Hero motherboard and Intel Core Ultra 7 265K desktop processor.

Thermaltake, a leading PC DIY brand for premium hardware solutions, proudly launches today at CES 2025 the TOUGHRAM XG RGB D5 7200 MT/s 32 GB (16 GB x2), now equipped with the latest CKD (Client Clock Driver) technology. This new addition to Thermaltake's high-performance DDR5 memory lineup integrates advanced technology with a sleek design, offering an exceptional solution for PC enthusiasts and professionals. With CKD technology, the TOUGHRAM XG RGB D5 Memory ensures superior signal integrity, improved power efficiency, and enhanced overclocking stability, delivering consistent performance under the most demanding workloads. Ideal for gaming, creative projects, and AI-driven applications, this memory module is engineered to exceed the expectations of modern high-performance computing.

"Thermaltake is committed to redefining the limits of DRAM memory technology to meet the evolving needs of gamers and professionals," said Kenny Lin, CEO of Thermaltake. "The TOUGHRAM XG RGB D5 with CKD technology exemplifies our dedication to delivering cutting-edge solutions that offer superior speed, stability, and customization; whether for serious gamers, creators, or even AI development, this memory sets a new benchmark in high-performance computing."

Corsair at the 2025 International CES brought a couple of new products from its memory and storage lines. This company used to be called "Corsair Memory" before it became Corsair Gaming, so they know a thing or two about enthusiast-segment memory and storage products, going back decades. We begin our tour with the new EX400U, a portable SSD with a 40 Gbps USB4 interface. The drive comes in 1 TB, 2 TB, and 4 TB capacities, and offers sequential transfer speeds of up to 4000 MB/s reads, with up to 3600 MB/s writes. The company hasn't made any claims on minimum write performance, so we don't know if the drive can be used for 4K or 8K RAW cinematography. More than PC, Corsair wants you to be enthused about its mobile chops. It can connect to an iPhone 15 or later as a mass-storage device, and supports MagSafe. Corsair plans to formally launch this on January 23.

Corsair has been agile in the PC overclocking memory space, responding to new trends with product launches, without having to wait for platforms such as trade shows, so there are no new products as such (You can feast your eyes on a DDR5-10000 Vengeance kit which uses CKD), but the company made two new accessory announcements for its Vengeance and Dominator product lines. For Vengeance, Corsair's mainstream and performance-segment memory line, the company announced Corsair Custom Lab, a service that allows you to customize die-cast designs onto the module's heat spreaders. We've seen a few examples at CES, but we're sure there will be more. The Custom Lab Vengeance RGB modules should be available in Q1 2025.

You've seen Splave on top of overclocking leaderboards, get ready to see him on PC hardware store shelves. The professional overclocker now has a line of high-end PC memory kits and power supplies in partnership with G.Skill and Enermax. The new Enermax Revolution DFX Pro 1350 W Splave Edition (the show demo was a different model as proof of concept) has a few features custom designed by him. The first one is a button that flushes all capacitors to make sure there's no residual power left in it when the AC input is switched off. Overclockers tend to need this between resets, and even waste a few seconds waiting on their PSUs to drain, or getting their motherboards to do that job (not recommended). The PSU has individually sleeved cables that are designed to not get in the way, and make them easier to manage; and the fan is configured to turn backwards for 20 seconds, blowing air out, each time the PSU is sent an ACPI shutdown command.

PNY today announced the specifications and availability of its high-performance DDR5 notebook memory, offered in 64 GB (2x32GB) and 32 GB (2x16GB) kits. Designed for tech enthusiasts, creators, and gamers who demand unrivaled performance, premium quality, and blazing-fast speeds, this new memory module harnesses the power of DDR5, runs at 5600 MHz, and features a CAS latency of 46.

Next Generation Technology
PNY Performance DDR5 is built to support the growing lineup of motherboards compatible with the new DDR5 memory standard. This cutting-edge technology introduces a host of new features previously unavailable or limited in earlier generations of notebook memory. DDR5 enables higher-density modules, with capacities up to four times greater per module than DDR4 and supports faster standard frequencies. PNY's Performance DDR5 memory offers speeds of 5600 MHz for outstanding performance and is available in 64 GB (2x32GB) and 32 GB (2x16GB) kits.