As a GPU supply chain gets regularly updated, NVIDIA quietly added a new memory partner to its GeForce RTX 50 series lineup, bringing SK Hynix on board alongside Samsung for GDDR7 modules. Early mentions suggested that SK Hynix memory would appear on standard RTX 5070 cards. Still, the first sightings were on RTX 5070 Ti models, especially in China, where these cards have arrived ahead of other regions. Users on Chiphell and Baidu, verifying their GPUs with GPU-Z, discovered that the SK Hynix chips, which officially run at 28 Gbps, can be safely overclocked to 34 Gbps. This shows that switching to a second supplier does not hurt performance or overclocking headroom, so enthusiasts can expect the same headroom they've enjoyed with Samsung-sourced modules.

That said, some owners have encountered an obstacle when cross-flashing BIOS files with SKUs that use Samsung memory. Flashing an RTX 5070 Ti BIOS from a Samsung-equipped card onto one built with SK Hynix memory sometimes prevents the GPU from booting. However, dual-BIOS designs let users switch back to factory firmware and restore normal operation without too much fuss. As VideoCardz pointed out, TechPowerUp's BIOS database indicates that current firmware versions from various board partners already include support for GDDR7 modules from Samsung, SK Hynix, and even Micron. This suggests that these flashing issues aren't simply a matter of unrecognized memory. It could be related to board-specific power settings or other configuration quirks, with every GPU maker designing their boards differently, yielding possible errors if the firmware is swapped. Since SK Hynix-based cards run fine out of the box, most users won't have any reason to flash different firmware.

SK hynix showcased groundbreaking memory solutions including HBM4 at the TSMC 2025 North America Technology Symposium held in Santa Clara, California on April 23. The TSMC North America Technology Symposium is an annual event in which TSMC shares its latest technologies and products with global partners. This year, SK hynix participated under the slogan "Memory, Powering AI and Tomorrow," highlighting its technological leadership in AI memory through exhibition zones including HBM Solutions and AI/Data Center Solutions.

In the HBM Solution section, SK hynix presented samples of its 12-layer HBM4 and 16-layer HBM3E products. The 12-layer HBM4 is a next-generation HBM capable of processing over 2 terabytes (TB) of data per second. In March, the company announced it has become the first in the world to supply HBM4 samples to major customers and plans to complete preparations for mass production within the second half of 2025. The B100, NVIDIA's latest Blackwell GPU equipped with the 8-layer HBM3E, was also exhibited in the section along with 3D models of key HBM technologies such as TSV and Advanced MR-MUF, drawing significant attention from visitors.

Marvell Technology, Inc., a leader in data infrastructure semiconductor solutions, today announced the successful interoperability of the Marvell Structera portfolio of Compute Express Link (CXL) with AMD EPYC CPUs and 5th Gen Intel Xeon platforms. This achievement underscores the commitment of Marvell to advancing an open and interoperable CXL ecosystem, addressing the growing demands for memory bandwidth and capacity in next-generation cloud data centers.

Marvell collaborated with AMD and Intel to extensively test Structera CXL products with AMD EPYC and 5th Gen Intel Xeon Scalable platforms across various configurations, workloads, and operating conditions. The results demonstrated seamless interoperability, delivering stability, scalability, and high-performance memory expansion that cloud data center providers need for mass deployment.

Cadence today announced the industry's first DDR5 12.8 Gbps MRDIMM Gen 2 memory IP system solution on the TSMC N3 process. The new solution addresses the need for greater memory bandwidth to accommodate unprecedented AI processing demands in enterprise and data center applications, including AI in the cloud. The Cadence DDR5 MRDIMM IP boasts a new high-performance, scalable and adaptable architecture based on Cadence's proven and highly successful DDR5 and GDDR6 product lines. With multiple engagements underway with leading AI, HPC and data center customers, this IP solution is already demonstrating its early leadership.

The new Cadence DDR5 IP offers a PHY and a high-performance controller as a complete memory subsystem. The design is validated in hardware using the most recently available MRDIMMs (Gen 2), achieving a best-in-class 12.8 Gbps data rate that doubles the bandwidth using current DDR5 6400 Mbps DRAM parts. The DDR5 IP memory subsystem is based on Cadence's silicon-proven, high-performance architecture, ultra-low latency encryption and industry-leading RAS features. The DDR5 MRDIMM Gen 2 IP is designed to enable advanced SoCs and chiplets with flexible floor plan design options, while the new architecture allows fine-tuning of power and performance based on individual application requirements.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is thrilled to unveil DDR5 memory with an ultra-high kit capacity of 256 GB (64 GB x4), overclocked to DDR5-6000 CL32. Built with high-performance SK hynix DDR5 ICs, this overclock memory speed and timing pushes the boundaries of memory overclocking by fully loading 4 modules of high-capacity DDR5 64 GB U-DIMM modules on a single system; marking a new milestone for high-performance computing, content creation, AI applications, and advanced workstation workloads.

Overclocked, Ultra-Capacity 256 GB (64 GB x4) at DDR5-6000 CL32 In content creation and recent advancements in AI, the need for higher DRAM capacity is essential. Whether calculating large language models or working with complex or high-resolution video content, high-speed memory of high-density 64 GB modules would help to provide a smoother and more efficient workflow. Loaded with AMD EXPO memory overclock profiles, see the DDR5-6000 CL32 256 GB (64 GB x4) kit being stress-tested in the screenshots below on the ASUS ROG CROSSHAIR X870E HERO motherboard with the AMD Ryzen 7 9800X3D desktop processor, as well as on the MSI MPG X870E CARBON WIFI motherboard with the AMD Ryzen 9 9900X desktop processor.

ASUS Republic of Gamers today announced the ROG Crosshair X870E Extreme and ROG Crosshair X870E Apex, which join the previously-released ROG Crosshair X870E Hero to triple the number of premium ASUS motherboard options for high-end AMD Ryzen systems. Equipped with premium components, heavy-duty power solutions, and offering next-level connectivity options, these motherboards cater to those who dare to build a PC that shatters boundaries. ASUS AI Advisor, available within the ASUS DriverHub app, can help users learn all about this new hardware and get performance tips.

ROG Crosshair X870E Extreme
The ROG Crosshair X870E Extreme carries forward the AMD Ryzen 9000 Series of ROG motherboards with a no-holds-barred feature set and an all-new design that exudes luxury. Its massive power solution unleashes the full potential of new CPUs. 20+2+2 power stages effortlessly slake the thirst of the top-end AMD Ryzen 9 9950X3D, even when firing on all cylinders. Thick-and-tall VRM heatsinks keep the power circuitry operating comfortably, while 8+8 ProCool II power connectors with solid pins give the CPU a direct line to the power supply.

Micron Technology, Inc. (Nasdaq: MU), a leader in innovative memory and storage solutions, today announced a market segment-based reorganization of its business units to capitalize on the transformative growth driven by AI, from data centers to edge devices.

Micron has maintained multiple generations of industry leadership in DRAM and NAND technology and has the strongest competitive positioning in its history. Micron's industry-leading product portfolio, combined with world-class manufacturing execution enables the development of differentiated solutions for its customers across end markets. As high-performance memory and storage become increasingly vital to drive the growth of AI, this Business Unit reorganization will allow Micron to stay at the forefront of innovation in each market segment through deeper customer engagement to address the dynamic needs of the industry.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of its highly anticipated High Bandwidth Memory (HBM) DRAM standard: HBM4. Designed as an evolutionary step beyond the previous HBM3 standard, JESD270-4 HBM4 will further enhance data processing rates while maintaining essential features such as higher bandwidth, power efficiency, and increased capacity per die and/or stack, because the higher bandwidth enables the higher data processing rate.

The advancements introduced by HBM4 are vital for applications that require efficient handling of large datasets and complex calculations, including generative artificial intelligence (AI), high-performance computing, high-end graphics cards, and servers. HBM4 introduces numerous improvements to the prior version of the standard, including:

Team Group Inc. today announced the launch of its latest gaming memory modules, the T-FORCE XTREEM CKD ARGB DDR5 and T-FORCE DELTA CKD RGB DDR5, featuring cutting-edge technology and innovative design. With an upgraded Client Clock Driver (CKD) technology, these modules break performance limits to reach an impressive 8400 MHz overclocking frequency to maximize performance and stability. CKD DDR5 memory modules are fully compatible with Intel Core Ultra and Intel 800 series platforms, ensuring system stability during high-load operations. The latest generation of memory technology provides a seamless user experience and offers gamers and enthusiasts a new level of overclocking performance.

The T-FORCE XTREEM CKD ARGB DDR5 features a 2 mm premium aluminium alloy heat sink, crafted through aluminium extrusion, CNC machining, and a sandblasted black finish. This aesthetic is characterized by a basalt-like strength and durability, complemented by a smooth texture reminiscent of fine black sand. Its innovative two-piece light pipe with translucent multilayered optical design produces an aurora-like ARGB lighting effect, perfectly creating an immersive and visually stunning ambiance for gamers. In contrast, the T-FORCE DELTA CKD RGB DDR5 draws inspiration from stealth fighter jets, featuring an ultra-wide 120° angle RGB lighting design paired with sleek geometric contours, delivering a bold, eye-catching look to elevate gaming setup with unparalleled performance. Both memory modules allow gamers to customize and enhance their PC builds with stunning aesthetics. They also support Intel XMP 3.0 one-click overclocking technology, enabling users to unlock peak performance without complex configurations.

So far, NVIDIA's GeForce RTX 50xx graphics card models have shipped with Samsung GDDR7 memory modules onboard. According to a fresh MEGAsizeGPU (aka @Zed__Wang) claim, a change in vendor has already occurred. The tenured tracker of Team Green inside track information believes that the company has: "started to use SK hynix GDDR7 for the GeForce RTX 50 series graphics cards. Started with GeForce RTX 5070 first." Officially, NVIDIA's latest board designs can support GDDR7 modules produced by the "big three:" Samsung, SK hynix and Micron (see BIOS info below). Team Green's comfortable market leading position probably grants plenty of negotiation power to pick and choose the best component deals. Day one evaluators performed teardowns on GeForce RTX 50 series review samples; TechPowerUp's W1zzard found Samsung "K4VAF325ZC-SC32" GDDR7 units—rated for 32 Gbps—onboard various GeForce RTX 5080 16 GB models. As outlined by VideoCardz, the rest of NVIDIA's "Blackwell" gaming product stack sticks with 28 Gbps-rated Samsung GDDR7 modules, extending to its Mobile portfolio.

XPG, a gaming brand of ADATA Technology, a global leader in memory modules and flash memory, is proud to announce its successful collaboration with GIGABYTE Technology. Leveraging the XPG LANCER RGB DDR5 memory and LN2 (Liquid Nitrogen) cooling technology, achieved an astonishing 12,762 MT/s overclocking speed, breaking the DDR5 memory overclocking world record. This remarkable achievement has been verified by the renowned international overclocking scoring platform, HWBOT, reinforcing XPG's leadership in extreme overclocking memory.

A Legendary Overclocking Record By Two Industry Titans
This record-breaking overclocking effort was spearheaded by GIGABYTE's renowned overclocker and engineer, HiCookie. The setup featured the Z890 AORUS TACHYON ICE motherboard, meticulously designed for overclocking, paired with the XPG LANCER RGB DDR5 memory and an Intel Core Ultra 9 285K processor. The XPG LANCER's optimized PCB design, IC tuning capabilities, and integrated circuit technology ensured stable operation even under the extreme LN2 environment, laying a crucial foundation for this world record. The Z890 AORUS TACHYON ICE motherboard, boasting an array of overclocking-centric features, including an OC button and an LN2_SW liquid nitrogen mode switch, further facilitated the CPU's ability to achieve its peak performance under extreme conditions.

Kioxia Corporation, a world leader in memory solutions, highlighted the critical role of Kioxia's next-generation high-performance storage solutions for AI applications at the China Flash Market Summit/MemoryS 2025 ("CFMS 2025") held on March 12 in Shenzhen, China.

At CFMS 2025, theme as "MEMORY LANDSCAPE, VALUE RE-SHAPE", Kioxia exhibited its eighth-generation BiCS FLASH 3D flash memory technology, for efficient and reliable storage solutions required by evolving cloud computing and large-scale AI models. Kioxia also presented its SSD product lineup which meets high performance, high efficiency, and high scalability required for AI applications. Kioxia's exhibition included its recently-announced KIOXIA LC9 Series, its first high-capacity 122.88 terabyte (TB) NVMe enterprise SSD which incorporates 2 terabit (Tb) QLC BiCS FLASH.

KLEVV, the leading consumer memory and storage brand introduced by Essencore, today announces exciting updates to its DDR5 Gaming/OC memory lineup. The new releases include stylish color options for the FIT V and BOLT V series, enhanced performance with lower latency SKUs, and "Optimized for AMD" variants across its DDR5 OC models. This update boosts overall system efficiency and expands platform compatibility, offering gamers, creators, and professionals even more choices to elevate their systems.

KLEVV introduces two fresh color variations to its FIT V and BOLT V memory series, complementing a broader range of system designs. The FIT V series now features an elegant Jet Black edition, delivering a minimalist and understated aesthetic tailored for creators and professionals. Meanwhile, the BOLT V series now features an all new pure White edition, combining a bold, modern aesthetic alongside high-speed performance tailored for gamers.

Welinq, a leader in quantum networking technology, has launched the first commercial quantum memory designed specifically for quantum data centers with world-record performance. Quantum computing is reaching a turning point: with more than 100 individual quantum computers deployed in dedicated infrastructures, the next challenge is networking them into scalable, high-performance architectures.

Just as classical data centers rely on distributed computing and high-speed interconnects, the future of quantum computing depends on optical networking and resource sharing between quantum processors. Welinq's quantum memory acts as the backbone of this infrastructure, making it possible to link quantum processors into powerful, scalable networks.

G.Skill International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is announcing a new high-capacity, low-latency DDR5 specification of DDR5-6000 CL26 with a total of 96 GB (48 GB x2) kit capacity, intended for the AMD AM5 platform. Designed for PC enthusiasts, gamers, professionals, and AI applications who are looking for high performance, this new memory kit enables low-latency performance at high kit capacities on the latest AMD computing platforms.

High-Capacity & Low-Latency Performance DDR5 Memory for AMD AM5
G.Skill continues to push the limits of DDR5 memory with the new DDR5-6000 CL26 at a high kit capacity of 96 GB (48 GB x2). Featuring a very low latency timing of CL26-36-36-96, this memory kit is engineered to provide efficiency and responsiveness for high-performance computing tasks, such as content creation, 3D modeling, or AI applications, on the latest AMD AM5 platforms. See below for a Memtest validation screenshots on the ASUS ROG CROSSHAIR X870E HERO motherboard with the AMD Ryzen 9 9950X3D desktop processor, as well as on the MSI MPG X870E CARBON WIFI motherboard with the AMD Ryzen 9 9900X desktop processor.

SK hynix Inc. announced today that it will participate in the GTC 2025, a global AI conference taking place March 17-21 in San Jose, California, with a booth titled "Memory, Powering AI and Tomorrow". The company will present HBM and other memory products for AI data centers and on-device and memory solutions for automotive business essential for AI era.

Among the industry-leading AI memory technology to be displayed at the show are 12-high HBM3E and SOCAMM (Small Outline Compression Attached Memory Module), a new memory standard for AI servers.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is excited to announce the release of three new DDR5 memory specifications with AMD EXPO OC profiles for AMD platforms, including an extreme speed with low-latency at DDR5-8000 CL36-48-48 48 GB (24 GB x2), large-capacity & low-latency DDR5-6000 CL28-36-36 192 GB (48 GB x4), and a new DDR5-6000 CL26-39-39 with 48 GB (24 GB x2) kit capacity. Designed for PC enthusiasts, gamers, content creators, and AI applications, these cutting-edge DDR5 memory kits push the boundaries of speed, latency, and capacity on AMD AM5 platforms.

Pushing the Limits with Extreme DDR5-8000 CL36 24 GB x2
For users seeking top-tier performance, the new DDR5-8000 CL36-48-48 24 GB x2 memory kit with AMD EXPO OC profile is engineered for ultra-high memory speed at low CL36 latency timings. This extreme-speed and low-latency combination is ideal for exceptional system responsiveness and multitasking performance. See below for the Memtest validation screenshot showcasing its stability on the ASUS ROG Crosshair X870E Hero motherboard and AMD Ryzen 9 9900X desktop processor.

On March 3, Longsys, a branded semiconductor memory enterprise, made its first-ever appearance at MWC 2025 in Barcelona. Under the theme "New Mode of Storage Empowering Global Mobility", it showcased a series of innovative storage products, attracting widespread attention.

PTM Business Model: Full-Stack Customization Service
The Product Technology Manufacturing (PTM) model was a major highlight, showcasing Longsys' full-stack customization capabilities—from in-house controller development and product design to rigorous testing and intelligent manufacturing.

Biwin, a world-renowned innovator in cutting-edge memory and storage solutions, proudly introduces the Biwin Black Opal OC Lab Gold Edition DW100 RGB DDR5 192 GB Memory Kit (48 GB x 4), available in DDR5-6400 CL30-39-39-108 1.4 V and DDR5-6000 CL28-36-36-102 1.4 V specifications. Breaking the capacity limits of traditional consumer memory, this ultra-large 192 GB kit offers the performance boost needed for AI computing, large-scale data processing, and next-gen computing.

Push Memory Performance with Revolutionary 192 GB Memory Kit
Biwin Black Opal DW100, delivering an ultra-high-capacity 192 GB (48 GB x4) configuration, redefines what's possible with desktop memory and exceptional memory bandwidth, stability, and efficiency. This breakthrough enables users to take full advantage of DDR5's enhanced data throughput to power fast, out-of-the-box speeds for AI computing, large language models (LLMs), generative AI, and edge computing, and other data-rich workloads.

Team Group Inc. announced today that it will participate in Embedded World 2025, a premier global event for embedded technology. The company will unveil its latest industrial-grade solutions, spanning three key product lines designed to meet the evolving demands of AI, high-performance computing, and data security. These innovations demonstrate Team Group's commitment to advancing efficiency and stability in industrial applications while laying a solid foundation for future technological progress.

Highlighting its leadership in embedded applications and groundbreaking technology, Team Group's D500R WORM Memory Card has been recognized with the prestigious Embedded Award. Join Team Group from March 11-13, 2025, at NürnbergMesse Convention Center in Nuremberg, Germany (Hall 5 / 5-239) to explore the latest breakthroughs and optimal solutions in industrial solutions.

Numemory has introduced the NM101, a 64 Gb storage-class memory module that uses technology similar to Intel's now-discontinued Optane architecture. The device implements phase-change memory and crossbar technology in a 3D selector-only memory structure, matching Optane's 3200 MT/s transfer rate specification. The technical architecture diverges from Intel's implementation by using a single selector in its cross-point structure rather than the dual-selector approach of 3D XPoint memory. Operating at 1.2 V with an X8 bus width, the NM101 uses 3D stacking to achieve claimed performance metrics of 10x faster read/write speeds than NAND flash. Xincun Technology, which established the Numemory division in Wuhan in 2022, holds 273 patents related to the technology, including 60 international and 213 Chinese patents. The company's R&D team of 144 engineers has developed the architecture since 2019, three years before Intel ended its Optane program.

Production plans specify an initial manufacturing target of 10,000 units monthly by the end of 2025. Guao Technology has committed ¥10 billion to establish production facilities in Zhejiang province, with additional funding from the Anji county government. The NM101's operating temperature range spans 0-70°C, suitable for standard data center environments. While the device's specifications suggest the potential for data center deployment, specific IOPS and latency metrics remain unpublished. Initial production will serve domestic Chinese servers and storage manufacturers. The technology's viability in mass production remains to be demonstrated, particularly given the manufacturing challenges that contributed to Optane's market exit. The Chinese internal market is massive, so serving only domestic companies could be enough for Numemory at the beginning. If the company continues development, worldwide expansion could pick up where Optane stopped.

Kioxia Corporation and Sandisk Corporation have pioneered a state-of-the-art 3D flash memory technology, setting the industry benchmark with a 4.8 Gb/s NAND interface speed, superior power efficiency, and heightened density

Unveiled at ISSCC 2025, the new 3D flash memory innovation, together with the companies' revolutionary CBA (CMOS directly Bonded to Array) technology, incorporates one of the latest interface standards, Toggle DDR6.0 for NAND flash memory, and leverages the SCA (Separate Command Address) protocol, a novel command address input method of its interface, and PI-LTT (Power Isolated Low-Tapped Termination) technology, which is instrumental in further reducing power consumption.

The global semiconductor manufacturing industry closed 2024 with strong fourth quarter results and solid year-on-year (YoY) growth across most of the key industry segments, SEMI announced today in its Q4 2024 publication of the Semiconductor Manufacturing Monitor (SMM) Report, prepared in partnership with TechInsights. The industry outlook is cautiously optimistic at the start of 2025 as seasonality and macroeconomic uncertainty may impede near-term growth despite momentum from strong investments related to AI applications.

After declining in the first half of 2024, electronics sales bounced back later in the year resulting in a 2% annual increase. Electronics sales grew 4% YoY in Q4 2024 and are expected to see a 1% YoY increase in Q1 2025 impacted by seasonality. Integrated circuit (IC) sales rose by 29% YoY in Q4 2024 and continued growth is expected in Q1 2025 with a 23% increase YoY as AI-fueled demand continues boosting shipments of high-performance computing (HPC) and datacenter memory chips.

SK hynix Inc. announced today that it has acquired TISAX, the global automobile industry information security certification, for the first time in the memory industry. SK hynix has obtained TISAX for all domestic sites located in Icheon, Bundang and Cheongju, and has been internationally accepted for the security capabilities required by the global automobile industry. Through this, the company aims to accelerate the development of high-performance memory solutions essential for realizing AI-based future automobile technology.

With the expansion of the electric vehicle market, autonomous driving, and the development of connected car technology, the importance of electronic parts is growing rapidly. In line with these changes, automotive semiconductors, which are widely used in electric equipment, are positioned as major components of automobiles. In particular, automotive semiconductors are applied to key safety systems of automobiles such as ADAS, brake systems and engine control, requiring a higher level of reliability than general semiconductors. In addition, as hacking and malicious code attacks targeting automobiles have increased recently, systematic security management in the manufacturing process is being emphasized as well as strengthening the performance of semiconductors themselves.

Scientists have made a big step forward in data storage technology, they've managed to improve the manufacturing process for 3D NAND flash memory. This type of storage technology stacks memory cells on top of each other to obtain higher data density. A team of experts from Lam Research, the University of Colorado Boulder, and Princeton Plasma Physics Lab came up with a better way to etch (the process of carving holes into alternating layers of silicon oxide and silicon nitride) by using hydrogen fluoride plasma. This new method cuts vertical channels through silicon-based materials twice as fast as before achieving 640 nanometers in just one minute.

The team found out that mixing in certain chemicals like phosphorus trifluoride helps the etching process. They also learned that some byproducts can slow down etching, but adding water can help fix this problem. "The salt can decompose at a lower temperature when water is present, which can accelerate etching", said Yuri Barsukov, a former PPPL researcher now working at Lam Research. This breakthrough is important as the need for data storage received a huge boost with the rise of AI programs, that need tons of storage.