SK hynix Inc. announced today that it will showcase the technology for ultra-high performance memory products, the core of future AI infrastructure, at CES 2024, the most influential tech event in the world taking place from January 9 through 12 in Las Vegas. SK hynix said that it will highlight its future vision represented by its Memory Centric at the show and promote the importance of memory products accelerating the technological innovation in the AI era and its competitiveness in the global memory markets.

The company will run a space titled SK Wonderland jointly with other major SK Group affiliates including SK Inc., SK Innovation and SK Telecom, and showcase its major AI memory products including HBM3E. SK hynix plans to provide HBM3E, the world's best-performing memory product that it successfully developed in August, to the world's largest AI technology companies by starting mass production from the first half of 2024.

Rambus Inc., a premier chip and silicon IP provider making data faster and safer, today announced the availability of its state-of-the-art Gen 4 DDR5 Registering Clock Driver (RCD) which began sampling to the major DDR5 memory module (RDIMM) manufacturers in the fourth quarter of 2023. The Rambus Gen 4 RCD boosts the data rate to 7200 MT/s, setting a new benchmark for performance and enabling a 50% increase in memory bandwidth over today's 4800 MT/s DDR5 module solutions. It supports the rapid pace of server main memory performance improvements to meet the demands of generative AI and other advanced data center workloads.

"With memory being an essential enabler of server performance, the need for greater memory bandwidth continues its meteoric rise driven by demanding workloads like generative AI," said Sean Fan, chief operating officer at Rambus. "The Rambus Gen 4 DDR5 RCD is the latest demonstration of our commitment to providing leadership products ahead of the market need to support our customers' current and planned server platforms."

Micron Technology, Inc. (Nasdaq: MU) today announced results for its first quarter of fiscal 2024, which ended November 30, 2023.

Fiscal Q1 2024 highlights

• Revenue of $4.73 billion versus $4.01 billion for the prior quarter and $4.09 billion for the same period last year
• GAAP net loss of $1.23 billion, or $1.12 per diluted share
• Non-GAAP net loss of $1.05 billion, or $0.95 per diluted share
• Operating cash flow of $1.40 billion versus $249 million for the prior quarter and $943 million for the same period last year

"Micron's strong execution and pricing drove better-than-anticipated first quarter financial results," said Micron Technology President and CEO Sanjay Mehrotra. "We expect our business fundamentals to improve throughout 2024, with record industry TAM projected for calendar 2025. Our industry-leading High Bandwidth Memory for data center AI applications illustrates the strength of our technology and product roadmaps, and we are well positioned to capitalize on the immense opportunities artificial intelligence is fueling across end markets."

Apple has been experimenting with Large Language Models (LLMs) that power most of today's AI applications. The company wants these LLMs to serve the users best and deliver them efficiently, which is a difficult task as they require a lot of resources, including compute and memory. Traditionally, LLMs have required AI accelerators in combination with large DRAM capacity to store model weights. However, Apple has published a paper that aims to bring LLMs to devices with limited memory capacity. By storing LLMs on NAND flash memory (regular storage), the method involves constructing an inference cost model that harmonizes with the flash memory behavior, guiding optimization in two critical areas: reducing the volume of data transferred from flash and reading data in larger, more contiguous chunks. Instead of storing the model weights on DRAM, Apple wants to utilize flash memory to store weights and only pull them on-demand to DRAM once it is needed.

Two principal techniques are introduced within this flash memory-informed framework: "windowing" and "row-column bundling." These methods collectively enable running models up to twice the size of the available DRAM, with a 4-5x and 20-25x increase in inference speed compared to native loading approaches on CPU and GPU, respectively. Integrating sparsity awareness, context-adaptive loading, and a hardware-oriented design pave the way for practical inference of LLMs on devices with limited memory, such as SoCs with 8/16/32 GB of available DRAM. Especially with DRAM prices outweighing NAND Flash, setups such as smartphone configurations could easily store and inference LLMs with multi-billion parameters, even if the DRAM available isn't sufficient. For a more technical deep dive, read the paper on arXiv here.

Chinese company Sipeed has introduced the Lichee Pocket 4A, one of the first handheld gaming devices based on the RISC-V open-source instruction set architecture (ISA). Sipeed positions the device as a retro gaming platform capable of running simple titles via software rendering or GPU acceleration. At its core is Alibaba's T-Head TH1520 processor featuring four 2.50 GHz Xuantie C910 RISC-V general-purpose CPU cores and an unnamed Imagination GPU. The chip was originally aimed at laptop designs. Memory options include 8 GB or 16 GB LPDDR4X RAM and 32 GB or 128 GB of storage. The Lichee Pocket 4A has a 7-inch 1280x800 LCD touchscreen, Wi-Fi/Bluetooth connectivity, and an array of wired ports like USB and Ethernet. It weighs under 500 grams. The device can run Android or Linux distributions like Debian, Ubuntu, and others.

As an early RISC-V gaming entrant, performance expectations should be modest—the focus is retro gaming and small indie titles, not modern AAA games. Specific gaming capabilities remain to be fully tested. However, the release helps showcase RISC-V's potential for consumer electronics and competitive positioning against proprietary ISAs like ARM. Pricing is still undefined, but another Sipeed handheld console retails for around $250 currently. Reception from enthusiasts and developers will demonstrate whether there's a viable market for RISC-V gaming devices. Success could encourage additional hardware experimentation efforts across emerging open architectures. With a 6000 mAh battery, battery life should be decent. Other specifications can be seen in the table below, and the pre-order link is here.

TrendForce predicts a significant rise in mobile DRAM and NAND Flash (eMMC/UFS) prices for the first quarter of 2024, with an expected seasonal increase of 18-23%. This surge could be further amplified in a market dominated by a few major players or if brand clients resort to panic buying under pressure.

Observations for 1Q24 indicate steady production planning by Chinese smartphone OEMs. A clear rise in memory prices is driving buyers to actively increase their purchasing efforts as they aim to establish secure and competitively priced inventory levels.

KLEVV, the premier consumer memory and storage brand introduced by Essencore, today is excited to unveil the all-new CRAS V RGB Brilliant White edition memory kit available in extreme high speed of DDR5-8200 & DDR5-8400 configurations. As a testament to the immense popularity and growing demand for the CRAS V RGB memory kits, KLEVV has responded by introducing the long-awaited Brilliant White edition to its flagship memory lineup as well as two high-speed options for consumers. This new addition boasts striking aesthetics by keeping the tone-on-tone design, and upholds the exceptional performance standards synonymous with the CRAS V RGB series, solidifying its position as the preferred choice among enthusiasts and professionals alike.

Meticulously engineered for high-speed operation, KLEVV's CRAS V RGB memory kits deliver outstanding performance with remarkable speed options of DDR5-8200 (featuring timings of 38-49-49-131) and DDR5-8400 (with timings of 40-52-52-134), all while operating efficiently at a voltage of 1.45 V. Below screenshot demonstrates the test result of DDR5-8400 kit using AIDA64 Cache & Memory Benchmark tool.

Patriot Memory, a leading manufacturer of high-performance enthusiast memory modules, SSDs, flash storage and gaming peripherals, has announced the upcoming release of Viper Gaming's first-ever collaboration with ASUS' gaming division, TUF Gaming: The Viper Elite 5 TUF Gaming Alliance RGB DDR5 series.

As a bold new take on the recently released Viper Elite 5 performance memory series, the Viper Elite 5 TUF Gaming Alliance RGB DDR5 series is certified by ASUS' TUF Gaming Alliance and features high-performance transfer speeds of up to 6,600MT/s, capacities of up to 48 GB and tuned overclock support for XMP 3.0 and AMD EXPO on select models. The Viper Elite 5 TUF Gaming Alliance RGB DDR5 series offers the latest in top-tier performance for gamers, tech enthusiasts and creatives alike. The Viper Elite 5 TUF Gaming Alliance RGB DDR5 series also features unique branding and design combining Viper Gaming and TUF Gaming alongside the Viper Elite 5's one-of-a-kind matte white heatshield with an RGB lightbar.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of JESD318: Compression Attached Memory Module (CAMM2) Common Standard. This groundbreaking standard defines the electrical and mechanical requirements for both Double Data Rate, Synchronous DRAM Compression-Attached Memory Modules (DDR5 SDRAM CAMM2s) and Low Power Double Data Rate, Synchronous DRAM Compression-Attached Memory Modules (LPDDR5/5X SDRAM CAMM2s) in a single, comprehensive document. JESD318 CAMM2 is available for download from the JEDEC website.

DDR5 and LPDDR5/5X CAMM2s cater to distinct use cases. DDR5 CAMM2s are intended for performance notebooks and mainstream desktops, while LPDDR5/5X CAMM2s target a broader range of notebooks and certain server market segments.

SK hynix presented its leading AI and high-performance computing (HPC) solutions at Supercomputing 2023 (SC23) held in Denver, Colorado between November 12-17. Organized by the Association for Computing Machinery and IEEE Computer Society since 1988, the annual SC conference showcases the latest advancements in HPC, networking, storage, and data analysis. SK hynix marked its first appearance at the conference by introducing its groundbreaking memory solutions to the HPC community. During the six-day event, several SK hynix employees also made presentations revealing the impact of the company's memory solutions on AI and HPC.

Displaying Advanced HPC & AI Products
At SC23, SK hynix showcased its products tailored for AI and HPC to underline its leadership in the AI memory field. Among these next-generation products, HBM3E attracted attention as the HBM solution meets the industry's highest standards of speed, capacity, heat dissipation, and power efficiency. These capabilities make it particularly suitable for data-intensive AI server systems. HBM3E was presented alongside NVIDIA's H100, a high-performance GPU for AI that uses HBM3 for its memory.

V-COLOR Technology Inc. is proud to announce the launch of a new TUF Gaming Alliance Memory, available in both DDR5 XPrism and DDR4 Prism Pro series, showcasing a striking design and exceptional performance. This collaboration with the ASUS TUF Gaming Alliance ensures that components bearing this badge undergo testing that surpasses the industry's standard norms. This rigorous testing is implemented to ensure superior compatibility, stability, and durability, catering to the specific needs of gamers and PC enthusiasts globally.

The new memory kits are offered in configurations of 32 GB (2x 16 GB) with speeds ranging from 5600 MHz to 6400 MHz for DDR5, and 16 GB (2x 8 GB) to 32 GB (2x 16 GB) with speeds ranging from 3200 MHz to 3600 MHz for DDR4 memory. The memory modules are equipped with powerful SK Hynix chips. DDR5 memory is compatible with Intel XMP, and DDR4 is compatible with both INTEL and AMD platforms.

In support of World Environment Day, Team Group released the C175 ECO Net-Zero Flash Drive previously, which received positive reception from consumers worldwide. To encourage action against environmental pollution, Team Group has continued to devote itself to the development and design of environmentally friendly products. Now Team Group is launching the industry's first memory module with a recycled aluminium heat sink: the T-FORCE VULCAN ECO DDR5 Desktop Overclocking Memory.

Team Group takes social responsibility seriously, promoting sustainability through green research and development. For every 10,000 recycled aluminium T-FORCE VULCAN ECO DDR5 heat sinks made, carbon emissions are reduced by 73% or about 1,665 kg of carbon emissions. That is equivalent to the carbon footprint of 550,000 hand towels, 310,000 plastic straws, 30,000 plastic bags, and 10,000 PET bottles. The T-FORCE VULCAN ECO DDR5 also uses FSC-certified eco-packaging for the entire product, further contributing to the reduction of material and electronic waste.

Thermaltake, the leading PC DIY premium brand for Case, Power, Cooling, Gaming Peripherals, and Enthusiast Memory solutions, is excited to launch the TOUGHRAM XG RGB D5 Memory DDR5 7600/8000 MT/s 32 GB (16 GB x2) available in black and white. The TOUGHRAM XG RGB D5 is a high-performance DDR5 RAM module that features a unique X-shaped light bar with 16 LEDs. To satisfy different speed demands, the TOUGHRAM XG RGB D5 series provides frequency options starting from 5600MT/s, and now has new higher frequency additions of up to 8000MT/s and can support the latest Intel 14th Gen.

The TOUGHRAM XG RGB D5 7600/8000 MT/s are made with superior components to achieve uncompromised speed. Built with tightly-screened ICs and a 10-layer PCB with 2oz copper inner layer, The TOUGHRAM XG RGB D5 can deliver outstanding response time performance and overclocking performance. The high-quality 10μ gold fingers on the ram provide high wear resistance to reinforce durability. Additionally, the TOUGHRAM XG RGB D5 Memory DDR5 is equipped with a doubled bank group architecture, increasing capacity without lag. To reach long-term stability, the DDR5 memory features a native Power Management IC (PMIC) to optimize power efficiency with merely 1.1 V low operating voltage. The TOUGHRAM XG RGB D5 7600/8000 MT/s include the on-die error correction code (ECC) can strengthen stability and reliability through its auto error correction.

SK hynix Inc. announced today that it has started supplying its customers with 16 gigabyte (GB) packages of Low Power Double Data Rate 5 Turbo (LPDDR5T), the fastest mobile DRAM available today that can transfer 9.6 gigabits per second (Gbps). Since the successful development of its LPDDR5T in January, SK hynix has been preparing to commercialize the product by conducting performance verification with global mobile application processor (AP) manufacturers.

SK hynix explained that LPDDR5T is the optimal memory to maximize the performance of smartphones, with the highest speed ever achieved. The company also emphasized that it would continue to expand the application range of this product and lead the generation shift in the mobile DRAM sector. The LPDDR5T 16 GB package operates in the ultra-low voltage range of 1.01 to 1.12 V set by the Joint Electron Device Engineering Council (JEDEC), and can process 77 GB of data per second, which is equivalent to transferring 15 full high-definition (FHD) movies in one second.

Yangtze Memory Technologies Corp (YMTC), China's biggest NAND flash memory manufacturer, has successfully raised billions of US Dollars in new capital to adapt to challenging US restrictions. According to the report from Financial Times, YMTC, which was added to a trade blacklist in December and barred from procuring US equipment to manufacture chips, exceeded its funding target. However, the exact amount remains undisclosed. The capital increase became necessary due to YMTC's substantial spending on finding alternative equipment and developing new components and core chipmaking tools. This financing round was oversubscribed by domestic investors, reflecting support for YMTC amid tightening US restrictions.

Last year, YMTC managed to raise 50 billion Chinese Yuan or about 7 billion US Dollars for equipment. Spending it all on the supply chain, the company is now looking to bolster its offerings with additional equipment for its memory facilities. One of the investors in the funding rally for YMTC has made a statement for Finanical Times: "If Chinese companies have equipment that can be used, [YMTC] will use it. If not, it will see if countries other than the US can sell to it. If that doesn't work, YMTC will develop it together with the supplier." This statement indicates that the company is looking into several options, where one is simply developing its custom machinery with the suppliers.

KLEVV, an emerging memory brand introduced by Essencore, is excited to unveil brand new additions to its high-capacity non-binary DDR5 overclocking memory range, meticulously designed to meet the demanding needs of gamers, content creators, and PC enthusiasts across the globe. KLEVV's DDR5 memory lineup now boasts novel non-binary and high-capacity combinations aimed at bringing users a diverse, cutting-edge product range.

Globally popular CRAS V RGB, CRAS XR5 RGB, and BOLT V DDR5 gaming/overclocking memory are now available in non-binary 48 GB (24 GB x2) and high-capacity 64 GB (32 GB x2) kits, ensuring enhanced performance and multitasking capabilities. Ideal for modern-day computing needs, these new units are suitable for PC workstations and gaming rigs that settle for nothing but the very best. KLEVV's CRAS V RGB and CRAS XR5 RGB DDR5 gaming/overclocking memory offer up to 8000MT/s clock speed, perfect for content creators seeking to harness the unparalleled performance of the latest DDR5 technology.

Samsung Electronics today reported financial results for the third quarter ended September 30, 2023. Total consolidated revenue was KRW 67.40 trillion, a 12% increase from the previous quarter, mainly due to new smartphone releases and higher sales of premium display products. Operating profit rose sequentially to KRW 2.43 trillion based on strong sales of flagship models in mobile and strong demand for displays, as losses at the Device Solutions (DS) Division narrowed.

The Memory Business reduced losses sequentially as sales of high valued-added products and average selling prices somewhat increased. Earnings in system semiconductors were impacted by a delay in demand recovery for major applications, but the Foundry Business posted a new quarterly high for new backlog from design wins. The mobile panel business reported a significant increase in earnings on the back of new flagship model releases by major customers, while the large panel business narrowed losses in the quarter. The Device eXperience (DX) Division achieved solid results due to robust sales of premium smartphones and TVs. Revenue at the Networks Business declined in major overseas markets as mobile operators scaled back investments.

Rambus Inc., a premier chip and silicon IP provider making data faster and safer, today announced that the Rambus HBM3 Memory Controller IP now delivers up to 9.6 Gigabits per second (Gbps) performance supporting the continued evolution of the HBM3 standard. With a 50% increase over the HBM3 Gen 1 data rate of 6.4 Gbps, the Rambus HBM3 Memory Controller can enable a total memory throughput of over 1.2 Terabytes per second (TB/s) for training of recommender systems, generative AI and other demanding data center workloads.

"HBM3 is the memory of choice for AI/ML training, with large language models requiring the constant advancement of high-performance memory technologies," said Neeraj Paliwal, general manager of Silicon IP at Rambus. "Thanks to Rambus innovation and engineering excellence, we're delivering the industry's leading-edge performance of 9.6 Gbps in our HBM3 Memory Controller IP."

BIOSTAR, a leading manufacturer of motherboards, graphics cards, and storage devices today, is excited to introduce the brand-new RGB DDR5 GAMING X memory. BIOSTAR's newest RGB DDR5 GAMING X 16 GB 6400 MHz memory module is a masterclass in precision engineering, tailor-made for every gamer's passion. From the casual enthusiast to the dedicated mid-range player and the elite pro gamer seeking peak performance, this memory is the ultimate upgrade, ready to elevate any gaming rig to battle-ready perfection.

The RGB DDR5 GAMING X memory offers users a captivating visual experience, enhancing the aesthetics of any gaming or workstation setup with its stunning RGB lights. Seamlessly compatible with BIOSTAR's RGB-sync-ready motherboards, it allows for a harmonious synchronization of colors and effects, elevating the ambiance of the user's rig while ensuring peak performance.

Lexar, a leading global brand of flash memory solutions, is excited to announce THOR OC DDR5 Desktop Memory. Featuring a complete redesign that pays homage to Thor's hammer, this memory also boasts a durable, solid aluminium heatsink that more than stands up to the challenges of overclocking by providing superior heat dissipation. Lexar THOR OC DDR5 Desktop Memory delivers up to 6000MT/s with timing as low as CL32 for a truly next-gen experience. It features a low-profile form factor that is perfect for compact PC builds. It also supports Intel XMP 3.0 and AMD EXPO overclocking and is compatible with most DDR5 motherboards.

Lexar THOR OC DDR5 Desktop Memory's on-die Error Correction Code (ECC) offers improved stability and reliability while its on-board Power Management IC (PMIC) enhances power efficiency. Another option for PC users is THOR OC DDR4 Desktop Memory. It offers 3200MT/s performance with timing of CL16 and is designed for PC enthusiasts and extreme gamers. It has an aluminium heat spreader with a winged design to keep systems running cool and is compatible with INTEL XMP 2.0 and AMD Ryzen.

Micron Technology, Inc., announced today that it is now shipping production samples of its low-power double data rate 5X (LPDDR5X) memory - the industry's only 1β (1-beta) mobile-optimized memory - for use with Qualcomm Technologies, Inc.'s latest flagship mobile platform, Snapdragon 8 Gen 3. Running at the world's fastest speed grade of 9.6 gigabits per second (Gbps), Micron LPDDR5X provides the mobile ecosystem with the fast performance needed to unlock generative artificial intelligence (AI) at the edge. Enabled by its innovative, industry-leading 1β process node technology, Micron LPDDR5X also delivers advanced power-saving capabilities for mobile users.

"Generative AI is poised to unleash unprecedented productivity, ease of use, and personalization for smartphone users by delivering the power of large language models to flagship mobile phones," said Mark Montierth, corporate vice president and general manager of Micron's Mobile Business Unit. "Micron's 1β LPDDR5X combined with Qualcomm Technologies' AI-optimized Snapdragon 8 Gen 3 Mobile Platform empowers smartphone manufacturers with the next-generation performance and power efficiency essential to enabling revolutionary AI technology at the edge."

TrendForce reports that consumer appetite for electronic products took a hit from high inflation, with global DRAM module sales in 2022 reaching US$17.3 billion—a 4.6% YoY decline. Revenue performance varied significantly among module makers due to the different domains they supply.

TrendForce's data indicated that the top five memory suppliers in 2022 accounted for 90% of total sales, with the top ten collectively capturing 96% of global market revenue. Kingston maintained its dominant market share of 78%. Even with a slight revenue dip, it held steadfast to its position as the global leader. Despite poor end-market demand, Kingston's robust brand scale, along with its comprehensive product supply chain, limited its revenue decline to a modest 5.3%, keeping it firmly at the top of market share rankings.

Thanks to the information from Windows Report, we have received numerous details regarding Qualcomm's upcoming Snapdragon Elite X chip for laptops. The Snapdragon Elite X SoC is built on top of Nuvia-derived Oryon cores, which Qualcomm put 12 off in the SoC. While we don't know their base frequencies, the all-core boost reaches 3.8 GHz. The SoC can reach up to 4.3 GHz on single and dual-core boosting. However, the slide notes that this is all pure "big" core configuration of the SoC, so no big.LITTLE design is done. The GPU part of Snapdragon Elite X is still based on Qualcomm's Adreno IP; however, the performance figures are up significantly to reach 4.6 TeraFLOPS of supposedly FP32 single-precision power. Accompanying the CPU and GPU, there are dedicated AI and image processing accelerators, like Hexagon Neural Processing Unit (NPU), which can process 45 trillion operations per second (TOPS). For the camera, the Spectra Image Sensor Processor (ISP) is there to support up to 4K HDR video capture on a dual 36 MP or a single 64 MP camera setup.

The SoC supports LPDDR5X memory running at 8533 MT/s and a maximum capacity of 64 GB. Apparently, the memory controller is an 8-channel one with a 16-bit width and a maximum bandwidth of 136 GB/s. Snapdragon Elite X has PCIe 4.0 and supports UFS 4.0 for outside connection. All of this is packed on a die manufactured by TSMC on a 4 nm node. In addition to marketing excellent performance compared to x86 solutions, Qualcomm also advertises the SoC as power efficient. The slide notes that it uses 1/3 of the power at the same peak PC performance of x86 offerings. It is also interesting to note that the package will support WiFi7 and Bluetooth 5.4. Officially coming in 2024, the Snapdragon Elite X will have to compete with Intel's Meteor Lake and/or Arrow Lake, in addition to AMD Strix Point.

Samsung Electronics Co., Ltd., a world leader in advanced memory technology, today held its annual Memory Tech Day, showcasing industry-first innovations and new memory products to accelerate technological advancements across future applications—including the cloud, edge devices and automotive vehicles.

Attended by about 600 customers, partners and industry experts, the event served as a platform for Samsung executives to expand on the company's vision for "Memory Reimagined," covering long-term plans to continue its memory technology leadership, outlook on market trends and sustainability goals. The company also presented new product innovations such as the HBM3E Shinebolt, LPDDR5X CAMM2 and Detachable AutoSSD.

Jung-Bae Lee, President and Head of Memory Business of Samsung Electronics, the world's largest NAND memory supplier, has noted in the blog post that Samsung plans to develop its 9th Generation V-NAND memory with over 300 layers, aiming for mass production in 2024. Samsung's V-NAND uses a double-stack structure and is expected to have more active layers than its competitors' 3D NAND memory, such as SK Hynix's forthcoming 321-layer memory. The increase in layers allows Samsung to enhance storage density and performance in its future 3D NAND devices, focusing on input/output (I/O) speed. While the specific performance details of Samsung's 9th Generation V-NAND remain undisclosed, the memory is expected to be used in next-generation PCIe SSDs with the PCIe 5.0 standard.

Jung-Bae Lee has noted: "New structural and material innovations will be critical in the upcoming era of sub-10-nanometer (nm) DRAM and 1,000-layer vertical V-NAND. As such, we are developing 3D stacked structures and new materials for DRAM while increasing layer count, decreasing height, and minimizing cell interference for V-NAND." The 9th installment of V-NAND, scheduled for 2024, is utilizing 11 nm-class DRAM. Additionally, the blog post reassures the commitment to CXL Memory Modules (CMM), which will enable the composable infrastructure of next-generation systems, especially with high-capacity SSDs powered by V-NAND.