Micron Technology, Inc., today announced the upcoming availability of two new consumer storage products, the Crucial P3 Plus Gen4 NVMe and Crucial P3 NVMe solid state drives (SSDs), as an expansion of its award-winning Crucial NVMe SSD product portfolio. The all new Crucial P3 Plus SSD product line will deliver attractive price-performance metrics with sequential read/write speeds up to 5000/4200 MB/s, while next-generation Crucial P3 SSDs will provide read/write speeds up to 3500/3000 MB/s. Both drives will be available in capacities up to 4 TB, making them the ideal scalable storage solutions that professionals, creatives, gamers and other high-performance users need.

"For users that have been waiting to upgrade their PCs to Gen4 SSDs, the wait is over. With the forthcoming availability of the new Crucial P3 Plus SSD, anyone seeking high-performance SSDs can upgrade to NVMe Gen4 storage and affordably futureproof their PC," said Teresa Kelley, vice president and general manager of Micron's Commercial Products Group. "Both the Crucial P3 Plus and P3 SSD products will strengthen our overall SSD portfolio and NVMe product category by offering competitive choices for high-performance storage that enables users to get more done in less time."

AMD has historically thrown brute memory bus width at solving memory-management problems in its graphics architectures, but the Infinity Cache technology launched with RDNA2 proved to be a game changer, as GPUs with narrow 256-bit memory interfaces could compete with NVIDIA's offerings that have 384-bit wide memory interfaces and faster GDDR6X memory types. It looks like the competition between NVIDIA "Ada" and AMD RDNA3 graphics architectures is about to heat up, as rumors are emerging of AMD giving its biggest next-gen ASIC, the "Navi 31," a 384-bit wide memory interface.

This 50 percent increase in memory bus width, runs in concert with two associated rumors—one, that the company will use faster 20 Gbps GDDR6 memory chips; and two, that AMD may increase the size of the on-die Infinity Cache memory. Samsung is already mass-producing 20 Gbps and 24 Gbps GDDR6 memory chips. These are regular GDDR6 memory chips with JEDEC-standard signaling, and not GDDR6X, an exclusive memory type innovated by NVIDIA and Micron Technology, which leverages PAM4 signaling to increase data-rates. A theoretical "Navi 31" with 20 Gbps GDDR6 memory speeds would enjoy 960 GB/s of memory bandwidth, a massive 87.5 percent bandwidth increase over the RX 6900 XT. The on-die Infinity Cache operates at speeds measured in several TB/s. The increased bus width could also signal an increase in memory sizes, with the RX 6950 XT successor featuring at least 24 GB of memory.

During its investors day yesterday, Micron revealed its 232-layer NAND Flash, which for now is the most advanced of its kind. Micron is using what the company calls CMOS Under Array or CuA as the platform to build a pair of TLC stacks on top of, for a total of 232-layers. Each stacked NAND Flash chip is said to have a capacity of 1 Terabit, or 128 GB, so we're not seeing any new capacity increases at this point, compared to the competition, but Micron is promising increased bandwidth node-over-node, so we might end up seeing better performance compared to its competitors. The new NAND Flash is supposed to be optimised for SSDs and other "managed" NAND, such as eMMC and UFS.

Micron also revealed an updated NAND Flash roadmap, with the company planning even more 200 plus layer products before moving to 300 and 400-layer stacks of NAND in the future. The 300-layer stacks are already under structural development, whereas the 400-layer products are still in the very early stages of research. The new 232-layer products are said to go into mass production towards the end of this year, so we shouldn't expect to see products based on Micron's 232-layer NAND until sometime in 2023.

Micron Technology, Inc., today announced new client solid-state drives (SSDs) that bring NVMe performance to client computing applications, freeing laptops, workstations and other portables from legacy architectures that can rob devices of battery power, performance and productivity. The Micron 2300 SSD combines the power and density needed to drive compute-heavy applications in a compact form factor with the reduced power consumption modern mobile users demand. For the first time, Micron brings together NVMe performance and low-cost quad-level-cell (QLC) NAND in the Micron 2210 QLC SSD. It combines fast NVMe throughput and Micron's leadership in QLC technology to offer flash capabilities at hard disk drive-like price points while reducing power consumption by 15 times when compared to hard drives.

"Ninety percent of client platforms will ship NVMe SSDs within the next year, and the market is fast bifurcating into mainstream and value market segments," said Roger Peene, vice president of marketing, Storage Business Unit, Micron. "Our two new client SSDs, the 2300 and 2210, are optimized for each segment. The 2300 offers outstanding power performance, while the 2210 delivers compelling price performance by using Micron's industry-leading QLC NAND." Both SSDs introduced today are built on Micron's innovative 96-layer 3D NAND technology to deliver power savings, right-sized capacity and compact form factors that enable flexible designs. They also deliver enhanced client security features and capabilities for protecting data, with TCG Opal 2.0 and TCG Pyrite 2.0 support.

Micron Technology, Inc., today announced the volume production of its new 16Gb GDDR6X memory, which is now shipping in the NVIDIA GeForce RTX 3090 Ti graphics card. The latest GDDR6X memory, available only from Micron, features twice the capacity and up to 15% higher performance over the previous 8Gb version. These additional capabilities mean end users can experience razor-sharp visuals, higher frame rates and outstanding performance in memory-intensive applications like gaming and content creation. Today Micron extends its performance leadership by providing a new graphics memory with 16Gb capacity and running at an industry-best 21 Gb/s in the GeForce RTX 3090 Ti. With a performance roadmap up to 24 Gb/s, GDDR6X is ready for data-hungry applications of the future. Additionally, Micron's innovative use of PAM4 signal techniques in GDDR6X make it more power efficient than any of the GDDR6 products publicly available.

"The industry-leading capabilities of Micron's GDDR6X memory help bring new levels of realism and performance to the most demanding applications," said Mark Montierth, vice president and general manager of High-Performance Memory and Networking at Micron. "Micron is once again at the forefront of the memory innovation powering today's highest bandwidth solutions and built with the advanced process and interface technology to enable continued graphics performance leadership."

Intel, Micron, Analog Devices, and MITRE Engenuity announced they have an agreement of principles to accelerate semiconductor research, development, and prototyping to build a more robust U.S. semiconductor industry, foster advanced manufacturing in the United States, and protect intellectual property amid increased global competition. This engagement signifies a commitment to collaborate on ensuring the resiliency of the industry. It establishes the Semiconductor Alliance to propose the foundation for a whole-of-nation approach for a more innovation-focused U.S. semiconductor industry and supply chain, one that ensures American innovation truly leads to American growth.

The Semiconductor Alliance, led by MITRE Engenuity, was developed from working groups in 2021, and its principles were published in a white paper on American Innovation for American Growth summarizing the Alliance's whole-of-nation call to action for a fair and objective National Semiconductor Technology Center (NSTC). The leading U.S. semiconductor manufacturers—Intel, Micron, and Analog Devices—and MITRE Engenuity seek engagement from industry and experts from all facets of the U.S. semiconductor ecosystem, including integrated device manufacturers; fabless chip companies; providers of infrastructure, design, and manufacturing tools; and technology innovators from industry and academia. MITRE Engenuity is built on MITRE's 60+ year history of serving as an independent, objective bridge and convener of government, industry, and academia, bringing together the whole of nation to tackle some of the biggest challenges to our national security.

According to TrendForce forecasts, average overall DRAM pricing in 2Q22 will drop by approximately 0~5%, due to marginally higher buyer and seller inventories coupled with the demand for products such as PCs, laptops, and smart phones being influenced in the short-term by the Russian-Ukrainian war and high inflation weakening consumer purchasing power. At present, the only remaining source of demand is on the server side, so overall DRAM stocks will remain oversupplied in 2Q22.

In terms of PC DRAM, PC OEMs are adopting a conservative stocking strategy for orders in 2Q22 due to the Russian-Ukrainian war, which may continue affecting orders during peak season in 2H22, and revising 2022 shipment targets downwards. Additionally, the overall supply of bits is still growing, so the PC DRAM price slump in 2Q22 will further expand to 3~8% and may continue to deteriorate.

Intel and AMD will be releasing new CPUs that support DDR5 DRAM solutions for PCs and servers this year. In response, the DRAM industry led by South Korean suppliers is developing solutions to complement the arrival of the new CPUs. In the midst of the gradual shift to DDR5, DRAM suppliers will also scale back the supply of DDR3 solutions, according to TrendForce's latest investigations. With Korean suppliers accelerating their withdrawal from DDR3 production, Taiwanese suppliers yet to kick off mass production using newly installed capacities, and Chinese suppliers falling short of their expected yield rate, the global supply of DDR3 solutions will undergo an impending decline. With respect to the demand side, however, not only has the supply of networking chips been ramping up, but material shortage issues are also gradually easing. As such, buyers are now procuring DDR3 solutions ahead of time, resulting in a tight supply and demand situation in the DDR3 market. TrendForce therefore expects DDR3 DRAM prices to recover from a bearish first quarter and undergo a 0-5% QoQ increase in 2Q22.

The next-generation "Ada Lovelace" graphics architecture powering NVIDIA's GeForce RTX 40-series graphics cards, could see a significant increase in on-die cache memory, according to leaked source-code related to drivers or firmware, seen by XinoAssassin on Twitter. The source-code leak emanates from the recent large-scale cyber-attack on NVIDIA. When comparing source files related to Ampere and Ada architectures, XinoAssassin noticed lines that reference large cache slices.

From this, it was analyzed that the top-of-the-line AD102 silicon will have 96 MB of last-level cache on the silicon; the AD103 and AD104 chips have 64 MB; the AD106 has 48 MB, and the smallest AD107 has 32 MB. Compare this to the 6 MB on the GA102, puny 4 MB on the GA103 and GA104; 3 MB on the GA106, and 2 MB on the GA107. NVIDIA is known to make innovations in generational memory bandwidth increase and memory management, with each new architecture. The company could tap into even faster versions of GDDR6X memory it co-developed with Micron (GDDR6 with PAM4 signaling).

Micron, today announced it is sampling the world's first vertically-integrated 176-layer NAND solid-state drive (SSD) for the data center. The Micron 7450 SSD with NVMe delivers quality-of-service (QoS) latency at or below 2 milliseconds (ms), a wide capacity range and the broadest set of form factors available to meet the needs of the most demanding data center workloads.

This new data center SSD includes Micron's industry-leading NAND, which contains 176 layers of storage cells and proven CMOS-under-the-array technology, to deliver an ultraefficient design. Integrated with Micron's own DRAM, internally developed SoC and associated firmware, this vertically integrated SSD enables the company to rapidly respond to customer needs in the market and support strengthened device security.

Much of the globalized world's logistics is still in disarray from the COVID-19 pandemic, and now, Russia has thrown its weight on the matter through its invasion of Ukraine. As the initial offensive played out in the early hours of February 24th, semiconductor industry analysts turned to the situation with a prying eye - how exactly could this deadlock, and the following political and economical sanctions towards Russia, impact the semiconductor industry? The consensus seems to be a favorable one: not that much.

"The semiconductor industry has a diverse set of suppliers of key materials and gases, so we do not believe there are immediate supply disruption risks related to Russia and Ukraine," said John Neuffer, chief executive and president of the Semiconductor Industry Association. That sentiment was echoed by Intel; a company representative told Bloomberg that the company does not anticipate "(...) any impact on our supply chain. Our strategy of having a diverse, global supply chain minimizes our risk of potential local interruptions."

In 4Q21, NAND Flash bit shipments grew by only 3.3% QoQ, a significant decrease from the nearly 10% in 3Q21, according to TrendForce's investigations. ASP fell by nearly 5% and the overall industry posted revenue of US$18.5 billion, a QoQ decrease of 2.1%. This was primarily due to a decline in the purchase demand of various products and a market shift to oversupply causing a drop in contract prices. In 4Q21, with the exception of enterprise SSD, the supply of which was limited by insufficient upstream components, the prices of other NAND Flash products such as eMMC, UFS, and client SSD, all fell.

TrendForce's summary of NAND Flash market sales performance in 2021 is as follows: although there have been signs of weakening since 2H21, thanks to remote services and cloud demand driven by the pandemic, revenue performance still grew significantly compared to 2020. Revenue reached US$68.6 billion, up 21.1% YoY, the second-biggest increase since 2018.

Out of nowhere, Micron has announced that it will end production of its Ballistix RAM products that are the high-performance and gamer focused RAM products from its Crucial brand. The details available so far doesn't state a reason for the discontinuation of these products. That said, Crucial has launched a wide range of DDR5 products, but so far none under the Ballistix brand and that is obviously a permanent move now. The company said it would focus on "the development of Micron's DDR5 client and server product roadmap, along with the expansion of the Crucial memory and storage product portfolio."

Furthermore the press release mentioned that "the company will continue to support the performance compute and gaming communities with its award-winning SSD products, such as the Crucial P5 Plus Gen 4 PCIe NVMe SSD, Crucial P2 Gen 3 NVMe SSD, and the popular Crucial X6 and Crucial X8 portable SSDs." It seems like Micron has decided to change the focus of it's consumer focused Crucial brand yet again, as the company has done several times in the past, but it's going to remove a major player in the consumer DRAM market, which isn't a good thing, especially as Micron was one of few DRAM manufacturers to offer high-end RAM modules, since neither Samsung or SK-Hynix is in this market. That said, it looks like Crucial will at least continue to offer its standard RAM modules, but they tend to follow JEDEC spec and aren't particularly exciting.

Despite its technical advantages over NAND flash, Intel's Optane memory technology never really took off in the consumer space, largely due to its much higher costs. Based on details from Intel's SEC filings, it would appear that its corporate customers haven't been overly impressed either, as Intel filed a US$576 million loss in 2020 with regards to its Optane business.

As to if this trend continued in 2021, we're going to have to wait and see, but it looks like the losses are set to continue based on its revenue figures, according to Blocks and Files. With this in mind, it seems like Micron's exit from 3D XPoint memory isn't so hard to understand, as the technology is clearly too costly to make up for the benefits on offer, for most of its potential customer base. Transitions to higher-density 3D XPoint memory has also been slow, which might be yet another reason customers have shied away from using it, even as a caching solution in storage servers. It wouldn't surprise us if Intel moves on from Optane/3D XPoint memory in the near future, as the company seems to have shifted its focus firmly away from storage solutions.

JEDEC Solid State Technology Association, the global leader in the development of standards for the microelectronics industry, today announced the publication of the next version of its High Bandwidth Memory (HBM) DRAM standard: JESD238 HBM3, available for download from the JEDEC website. HBM3 is an innovative approach to raising the data processing rate used in applications where higher bandwidth, lower power consumption and capacity per area are essential to a solution's market success, including graphics processing and high-performance computing and servers.

NAND Flash prices for 1Q22 are expected to decline by 8-13% QoQ, compared to TrendForce's previous forecast of 10-15% QoQ, primarily due to PC OEMs' increased orders for PCIe 3.0 products and the impact of the lockdown in Xi'an on PC OEMs' price negotiation approaches. To mitigate potential risks in logistics, NAND Flash buyers are now more willing to accept a narrower decline in contract prices in order to obtain their products sooner. However, as the Xi'an lockdown has not noticeably affected the local fabs' manufacturing operations, the movement of NAND Flash contract prices going forward will likely remain relatively unaffected by the lockdown.

In addition, TrendForce finds that the daily number of new COVID-19 cases in Xi'an has recently undergone a noticeable drop, and the local government has also announced that that the emergency level has been downgraded. As such, Samsung's and Micron's local production facilities are returning to normal with respect to workforce and operational capacity. Samsung's local production base manufactures NAND Flash products, whereas Micron's local production base is responsible for the testing and packaging of DRAM chips as well as the assembly of DRAM modules. The impacts of the lockdown mainly relate to delays in the deliveries of memory products to customers. On the other hand, the event has not caused a tangible loss in memory production.

Despite having sold its fab in Lehi, Utah to TI back in October last year, it looks like Micron is ready to build a new, most likely more advanced fab and rumours are now circulating that it might end up in Austin, Texas. Micron currently has two fabs in Virginia and one in Idaho, plus four in Singapore, four in Taiwan, one in the PRC and one in Japan. It should be noted that Micron used to have a fab outside of Dallas, so Texas isn't entirely unfamiliar ground for Micron. Initially Micron is said to have been eyeing North Carolina for its new fab, but that apparently fell through recently.

Micron announced last year that it's looking to invest some US$150 million in expanding and improving upon its current fabs, plus potentially building additional ones. In addition to Texas, California and Arizona are apparently still in the running, although it's unclear when Micron will make a final decision. The fab will obviously be producing either DRAM or flash memory, but it's not clear what markets Micron is looking to expand its production in, but DRAM seems more likely based on current market conditions. The company is said to be looking for a location that has not only the suitable staff required, but is also looking for the right cost and reliability when it comes to utilities, as well as regulatory friendliness.

A disturbing trend among entry-level M.2 NVMe SSDs is a complete disregard from manufacturers for consistency in the brands and types of the various key components of the drives. The companies simply advertise a certain set of performance and endurance numbers, which serve as ends to reach by whatever means (of controller or NAND flash combos). This was recently illustrated with the Kingston NV1, which presents an extreme case of "hardware lottery." You can get either a SMI or Phison controller, and either a TLC or QLC NAND flash (combinations thereof).

Cutting through all this, ADATA is making a reassuring guarantee with regards to its recently announced entry-level NVMe product, the XPG Atom 50. In an exclusive comment to TechPowerUp, the company said that all XPG Atom 50 drives in the market will come with a consistent combination of controller and NAND flash. The drive combines an Innogrit IG5220 RainierQX controller with Micron "B47R" 176-layer 3D TLC NAND flash chips, a combo ADATA guarantees it will never break. We recently reviewed the 1 TB variant of this drive, and found it to offer excellent performance leveraging PCIe Gen4, at a price you'd typically find PCIe Gen3 drives at.

Micron Technology, Inc., today announced it has begun volume shipments of the world's first 176-layer QLC NAND SSD. Built with the most advanced NAND architecture, Micron's 176-layer QLC NAND delivers the industry's leading storage density and optimized performance for a broad range of data-rich applications. Designed for use cases spanning client and data center environments, Micron's transformative new NAND technology is now available with the introduction of the Micron 2400 SSD, the world's first 176-layer PCIe Gen4 QLC SSD for client applications. The new 176-layer QLC NAND will also be incorporated into select Micron Crucial consumer SSDs, and available as a component for system designers.

Micron's groundbreaking 176-layer QLC NAND provides a layer count and density unprecedented in QLC NAND flash and follows Micron's delivery of the industry's first 176-layer TLC NAND. Additionally, Micron's 176-layer QLC NAND enables 33% higher I/O speed and 24% lower read latency than Micron's prior generation solution. Its replacement-gate architecture is the only mass production QLC flash storage that combines charge trap with a CMOS-under-array design. These improvements are driving adoption of QLC SSDs in the client PC market, which is expected to triple QLC adoption by 2023, exceeding 35%, and reaching nearly 80% bit share in 2025.

During its quarterly earnings call, Micron confirmed that the lack of DDR5 memory in retail is not due to a shortage of DDR5 memory ICs, but rather due to a shortage of PMIC and VRM components. Micron said that "demand for DDR5 products is significantly exceeding supply due to non-memory component shortages impacting memory suppliers' ability to build DDR5 modules."

It would appear that demand ended up being higher than expected, due to the popularity of Intel's Alder Lake CPUs, with the DRAM module makers not having prepared enough stock of the new components that are required to make DDR5 DIMMs, which has resulted in the current lack of DDR5 modules in retail. Micron is working on its end to resolve this issue and has entered what it calls "strategic agreements to secure supply of certain components" and is expecting supply of said components to improve slowly in 2022. It seems like some of these components are also related to other products made by Micron, such as SSDs.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its first quarter of fiscal 2022, which ended Dec. 2, 2021. "Micron delivered solid fiscal first quarter results led by strong product portfolio momentum," said Micron Technology President and CEO Sanjay Mehrotra. "We are now shipping our industry-leading DRAM and NAND technologies across major end markets, and we delivered new solutions to data center, client, mobile, graphics and automotive customers. As powerful secular trends including 5G, AI, and EV adoption fuel demand growth, our technology leadership and world-class execution position us to create significant shareholder value in fiscal 2022 and beyond."

Demand for NAND Flash products will undergo a noticeable and cyclical downward correction in 1Q22 as major smartphone brands wind down their procurement activities for the peak season and ODMs prepare for the New Year holidays, according to TrendForce's latest investigations. As such, the NAND Flash market will remain in an oversupply situation, with prices continuing to undergo downward corrections accordingly. However, PC OEMs have been reinstating certain orders for client SSDs since early November in response to improvements in the supply of upstream semiconductor materials. By fulfilling these orders, suppliers are able to keep their inventory level relatively low, meaning they are not under as much pressure as previously expected to reduce inventory by lowering prices. Taking these factors into account, TrendForce expects NAND Flash ASP to undergo a 10-15% QoQ decline in 1Q22, during which NAND Flash prices will experience the most noticeable declines compared to the other quarters in 2022.

Regarding the price trend of NAND Flash products across the whole 2021, TrendForce further indicates that suppliers have actively transitioned their output to higher-layer technologies, resulting in a bit supply growth that noticeably outpaces demand, though the tight supply of components such as controller ICs and PMICs has constrained the production of NAND Flash end-products. Hence, the decline in contract prices of NAND Flash products has not been as severe as previously expected. Moving ahead to 2022, however, the supply of relevant components is expected to gradually improve, so the market for various NAND Flash products will also likely shift towards a noticeable oversupply. As a result, prices of NAND Flash products will steadily decline before the arrival of the peak season in 3Q22.

Micron Technology, one of the world's largest semiconductor manufacturers and the only U.S.-based manufacturer of memory, today announced plans for its new memory design center in Midtown Atlanta, expanding the company's reach into the Southeast. The new site, which will open its doors for business in January 2022, enables Micron to increase its access to Atlanta's rich pool of technical talent to further advance its memory design and engineering leadership, while also driving a positive impact in the community. Micron aims to build strong partnerships with many institutions in the region including Emory University, Georgia Tech, Morehouse College, Spelman College and University of Georgia.

Headquartered in Boise, Idaho, Micron maintains U.S. offices in California, Colorado, Minnesota, Texas and Virginia and has a global manufacturing and research and development (R&D) network that spans 17 countries. Memory is at the leading edge of semiconductor manufacturing, requiring production of advanced technologies that are pushing the laws of physics. R&D investments in the field are critical for advancing DRAM innovation. Micron's Atlanta Design Center expansion will create up to 500 jobs across various STEM disciplines including computer hardware and electrical and electronic engineering.

NVIDIA's upcoming flagship graphics card, the GeForce RTX 3090 Ti (also known as RTX 3090 SUPER in some rumor circles); could feature the company's fastest memory solution for GeForce, according to a Uniko's Hardware report. The card maxes out not just the 384-bit bus width of the "GA102" silicon, but also uses Micron-sourced "MT61K512M32KPA-21U" GDDR6X memory chips, which are rated for 21 Gbps date-rates. This results in a roughly 7.7% increase in memory bandwidth over the RTX 3090, with a whopping 1008 GB/s on tap. The title of the highest memory bandwidth on a client-segment graphics card would still go to the Radeon VII, which uses 4096-bit HBM2 to achieve 1024 GB/s. The RTX 3090 Ti also maxes out the "GA102" silicon, by enabling all 84 streaming multiprocessors (SM).

The growth of the NAND Flash market in 3Q21 was primarily driven by strong demand from the data center and smartphone industries, according to TrendForce's latest investigations. More specifically, NAND Flash suppliers' hyperscaler and enterprise clients kept up their procurement activities that began in 2Q21 in order to deploy products based on new processor platforms. Major smartphone brands, on the other hand, likewise expanded their NAND Flash procurement activities during the quarter as they prepared to release their new flagship models. As such, clients in both server and smartphone industries made significant contributions to the revenue growth of the NAND Flash industry for 3Q21. At the same time, however, suppliers also warned that orders from PC OEMs began showing signs of decline. On the whole, the industry's quarterly total NAND Flash bit shipment increased by nearly 11% QoQ for 3Q21, and the overall NAND Flash ASP rose by nearly 4% QoQ for the same quarter. Thanks to rising prices and expanding shipments, the quarterly total NAND Flash revenue increased by 15% QoQ to a new record high of US$18.8 billion in 3Q21.