
Micron Delivers Industry's Fastest, Highest-Capacity HBM to Advance Generative AI Innovation
Micron Technology, Inc. today announced it has begun sampling the industry's first 8-high 24 GB HBM3 Gen2 memory with bandwidth greater than 1.2 TB/s and pin speed over 9.2 Gb/s, which is up to a 50% improvement over currently shipping HBM3 solutions. With a 2.5 times performance per watt improvement over previous generations, Micron's HBM3 Gen2 offering sets new records for the critical artificial intelligence (AI) data center metrics of performance, capacity and power efficiency. These Micron improvements reduce training times of large language models like GPT-4 and beyond, deliver efficient infrastructure use for AI inference and provide superior total cost of ownership (TCO).
The foundation of Micron's high-bandwidth memory (HBM) solution is Micron's industry-leading 1β (1-beta) DRAM process node, which allows a 24Gb DRAM die to be assembled into an 8-high cube within an industry-standard package dimension. Moreover, Micron's 12-high stack with 36 GB capacity will begin sampling in the first quarter of calendar 2024. Micron provides 50% more capacity for a given stack height compared to existing competitive solutions. Micron's HBM3 Gen2 performance-to-power ratio and pin speed improvements are critical for managing the extreme power demands of today's AI data centers. The improved power efficiency is possible because of Micron advancements such as doubling of the through-silicon vias (TSVs) over competitive HBM3 offerings, thermal impedance reduction through a five-time increase in metal density, and an energy-efficient data path design.
The foundation of Micron's high-bandwidth memory (HBM) solution is Micron's industry-leading 1β (1-beta) DRAM process node, which allows a 24Gb DRAM die to be assembled into an 8-high cube within an industry-standard package dimension. Moreover, Micron's 12-high stack with 36 GB capacity will begin sampling in the first quarter of calendar 2024. Micron provides 50% more capacity for a given stack height compared to existing competitive solutions. Micron's HBM3 Gen2 performance-to-power ratio and pin speed improvements are critical for managing the extreme power demands of today's AI data centers. The improved power efficiency is possible because of Micron advancements such as doubling of the through-silicon vias (TSVs) over competitive HBM3 offerings, thermal impedance reduction through a five-time increase in metal density, and an energy-efficient data path design.