Micron Technology, Inc., today announced the availability of the Crucial P310 2230 Gen 4 NVMe solid-state drive (SSD), which empowers enthusiasts of handheld gaming and users of mini PCs and ultrathin laptops to store more games and data-intensive content at their fingertips without sacrificing speed or performance. With read and write speeds of 7,100 and 6,000 megabytes per second (MB/s), respectively, and capacities up to 2 terabytes (TB), the P310 2230 SSD packs a unique punch, offering high performance and capacity in a compact, power-efficient form factor.

"Today's contemporary games are storage- and performance-hungry, and this is especially true for handheld gamers who want to be able to quickly access all their favorite games at their fingertips," said Jonathan Weech, senior director of product marketing for Micron's Commercial Products Group. "We've built our Crucial P310 2230 Gen 4 SSD to satisfy this need for speed and more capacity, providing a dynamic, power-efficient SSD that allows gamers to build their dream gaming libraries, load multiworld games faster and extend battery life for a richer gaming experience on the go."

TrendForce's latest industry report on AI servers reveals that high demand for advanced AI servers from major CSPs and brand clients is expected to continue in 2024. Meanwhile, TSMC, SK hynix, Samsung, and Micron's gradual production expansion has significantly eased shortages in 2Q24. Consequently, the lead time for NVIDIA's flagship H100 solution has decreased from the previous 40-50 weeks to less than 16 weeks.

TrendForce estimates that AI server shipments in the second quarter will increase by nearly 20% QoQ, and has revised the annual shipment forecast up to 1.67 million units—marking a 41.5% YoY growth.

Micron Technology, Inc., today announced it is now sampling its multiplexed rank dual inline memory module (MRDIMMs). The MRDIMMs will enable Micron customers to run increasingly demanding workloads and obtain maximum value out of their compute infrastructure. For applications requiring more than 128 GB of memory per DIMM slot, Micron MRDIMMs outperform current TSV RDIMMs by enabling the highest bandwidth, largest capacity with the lowest latency and improved performance per watt to accelerate memory-intensive virtualized multi-tenant, HPC and AI data center workloads.1 The new memory offering is the first generation in the Micron MRDIMM family and will be compatible with Intel Xeon 6 processors.

"Micron's latest innovative main memory solution, MRDIMM, delivers the much-needed bandwidth and capacity at lower latency to scale AI inference and HPC applications on next-generation server platforms," said Praveen Vaidyanathan, vice president and general manager of Micron's Compute Products Group. "MRDIMMs significantly lower the amount of energy used per task while offering the same reliability, availability and serviceability capabilities and interface as RDIMMs, thus providing customers a flexible solution that scales performance. Micron's close industry collaborations ensure seamless integration into existing server infrastructures and smooth transitions to future compute platforms."

Micron has announced more precise timeframes for the commencement of operations at its two new memory facilities in the United States during its Q3 FY2024 results presentation. The company expects these fabs, located in Idaho and New York, to begin production between late 2026 and 2029. The Idaho fab, currently under construction near Boise, is slated to start operations between September 2026 and September 2027. Meanwhile, the New York facility is projected to come online in the calendar year 2028 or later, pending the completion of regulatory and permitting processes. These timelines align with Micron's original plans announced in 2022 despite recent spending optimizations. The company emphasizes that these investments are crucial to support supply growth in the latter half of this decade.

Micron's capital expenditure for FY2024 is set at approximately $8 billion, with a planned increase to around $12 billion in FY2025. This substantial rise in spending, targeting a mid-30s percentage of revenue, will support various technological advancements and facility expansions. A substantial portion of this increased investment - over $2 billion - will be dedicated to constructing the new fabs in Idaho and New York. Additional funds will support high-bandwidth memory assembly and testing, as well as the development of other fabrication and back-end facilities. Sanjay Mehrotra, Micron's CEO, underscored the importance of these investments, stating that the new capacity is essential to meet long-term demand and maintain the company's market position. He added that these expansions, combined with ongoing technology transitions in Asian facilities, will enable Micron to grow its memory bit supply in line with industry demand.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its third quarter of fiscal 2024, which ended May 30, 2024.

Fiscal Q3 2024 highlights

• Revenue of $6.81 billion versus $5.82 billion for the prior quarter and $3.75 billion for the same period last year
• GAAP net income of $332 million, or $0.30 per diluted share
• Non-GAAP net income of $702 million, or $0.62 per diluted share
• Operating cash flow of $2.48 billion versus $1.22 billion for the prior quarter and $24 million for the same period last year

"Robust AI demand and strong execution enabled Micron to drive 17% sequential revenue growth, exceeding our guidance range in fiscal Q3," said Sanjay Mehrotra, President and CEO of Micron Technology. "We are gaining share in high-margin products like High Bandwidth Memory (HBM), and our data center SSD revenue hit a record high, demonstrating the strength of our AI product portfolio across DRAM and NAND. We are excited about the expanding AI-driven opportunities ahead, and are well positioned to deliver a substantial revenue record in fiscal 2025."

Competition among Samsung, SK Hynix, and Micron is intensifying, with a focus on enhancing processing speed and efficiency in graphics DRAM (GDDR) for AI accelerators and cryptocurrency mining. Compared with High Bandwidth Memory (HBM), the GDDR7 has a faster data processing speed and a relatively low price. Since Nvidia is expected to use next-generation GDDR7 with its GeForce RTX50 Blackwell GPUs, competition will likely be as strong as the demand. We can see that by looking, for example, at the pace of new GDDR7 releases from the past two years.

In July 2022, Samsung Electronics developed the industry's first 32 Gbps GDDR7 DRAM, capable of processing up to 1.5 TB of data per second, a 1.4 times speed increase and 20% better energy efficiency compared to GDDR6. In February 2023, Samsung demonstrated its first GDDR7 DRAM with a pin rate of 37 Gbps. On June 4, Micron launched its new GDDR7 at Computex 2024, with speeds up to 32 Gbps, a 60% increase in bandwidth, and a 50% improvement in energy efficiency over the previous generation. Shortly after, SK Hynix introduced a 40 Gbps GDDR7, showcased again at Computex 2024, doubling the previous generation's bandwidth to 128 GB per second and improving energy efficiency by 40%.

Mimir IP, a South Korean patent management company, bought around 1,500 chip-related patents from SK hynix in May. They have now filed a lawsuit against the U.S. memory company Micron, accusing it of using these patents without permission, TrendForce reported. If Mimir wins, they could get up to USD 480 million in damages. The lawsuit, filed on June 3, also targets Tesla, Dell, HP, and Lenovo for using Micron's products. The patents in question are related to circuits, voltage measurement devices, and non-volatile memory devices.

The case is being heard in the US District Court for the Eastern District of Texas and the US International Trade Commission. This is the first time a South Korean company that acquired patents from domestic chipmakers has filed a lawsuit against a US semiconductor company. Officials from the involved companies have not commented. Micron, Samsung, and SK hynix have been changing how they deal with their patents recently, so this is not really a surprise move. In March 2023, Micron transferred over 400 chip-related patents to Lodestar Licensing Group. In June 2023, Samsung transferred 96 US chip patents, including the right to file patent infringement complaints, to IKT, an affiliate of Samsung Display.

GIGABYTE today launched its flagship M.2 NVMe SSD, the AORUS Gen5 14000 series. The drive packs the winning combination of Phison PS5026-E26 Max14um controller, with Micron B58R 232-layer 3D TLC NAND flash memory, along with a fast LPDDR4 DRAM cache. The drive comes in 1 TB, 2 TB, and 4 TB capacity variants. The maximum speeds vary for the three.

The 2 TB model is the fastest of the three, with a sequential read speed of up to 14,500 MB/s, and sequential write speed of up to 12,700 MB/s. The 4 TB model is the second fastest, with up to 14,100 MB/s sequential reads, and up to 12,600 MB/s sequential writes. The 1 TB model is third, with up to 13,600 MB/s sequential reads, and up to 10,200 MB/s sequential writes. All three models come without a heatsink, with just a metal film label on top. GIGABYTE recommends pairing the drive with M.2 SSD cooling solutions included with your motherboard to minimize performance throttling. The company didn't announce pricing.

TrendForce reveals that the DRAM industry experienced a 5.1% revenue increase in 1Q24 compared to the previous quarter. This growth—reaching US$18.35 billion—was driven by rising contract prices for mainstream products, with the price increase being more significant than in 4Q23. As a result, most companies in the industry continued to see revenue growth.

The top three suppliers experienced a decline in shipments in the first quarter, demonstrating the industry's off-season effect. Additionally, downstream companies had higher inventory levels, which led to a significant reduction in procurement volume. As for ASP, the top three suppliers continued to benefit from contract price increases seen in 4Q23. With inventory levels still healthy, there was a strong intention to raise prices.

The race is on for memory manufacturers to bring the next generation GDDR7 graphics memory into mass production. While rivals Samsung and Micron are aiming to have GDDR7 chips available in Q4 of 2024, South Korean semiconductor giant SK Hynix revealed at Computex 2024 that it won't kick off mass production until the first quarter of 2025. GDDR7 is the upcoming JEDEC standard for high-performance graphics memory, succeeding the current GDDR6 and GDDR6X specifications. The new tech promises significantly increased bandwidth and capacities to feed the appetites of next-wave GPUs and AI accelerators. At its Computex booth, SK Hynix showed off engineering samples of its forthcoming GDDR7 chips, with plans for both 16 Gb and 24 Gb densities.

The company is targeting blazing-fast 40 Gbps data transfer rates with its GDDR7 offerings, outpacing the 32 Gbps rates its competitors are starting with on 16 Gb parts. If realized, higher speeds could give SK Hynix an edge, at least initially. While trailing a quarter or two behind Micron and Samsung isn't ideal, SK Hynix claims having working samples now validates its design and allows partners to begin testing and qualification. Mass production timing for standardized memories also doesn't necessarily indicate a company is "late" - it simply means another vendor secured an earlier production window with a specific customer. The GDDR7 transition is critical for SK Hynix and others, given the insatiable demand for high-bandwidth memory to power AI, graphics, and other data-intensive workloads. Hitting its stated Q1 2025 mass production target could ensure SK Hynix doesn't fall too far behind in the high-stakes GDDR7 race, with faster and higher-density chips to potentially follow shortly after volume ramp.

Micron is getting ready to set sail with the new GDDR7 memory, and being NVIDIA's long-term partner, both are gaining big with the GeForce RTX 4000 Series. A few days ago, Micron announced its imminent launch of GDDR7 memory, remember that in March JEDEC published the GDDR7 memory standard. The interesting part is that an even more important piece of information was provided in one of Micron's slide-deck, the one that shows GDDR7 gaming performance. Officially Micron says that GDDR7 can be 3.1x faster than GDDR6 and 1.5x faster than GDDR6X. However, the slide in question provides some normalized FPS performance for ray tracing, and rasterization under game testing conditions. Until now, everything is clear, what comes next is our speculation and assumptions, based on previous knowledge so please, take it with a grain of salt. Will it be a hard guess, looking over those graphs, to tell that NVIDIA's RTX 5090 offers up to a 42% improvement over the RTX 4090 in rasterization, and up to 48% in ray tracing?

NVIDIA is getting closer to releasing its next-gen GPU with the RTX 5090 graphics card. Micron is in a strong partnership with NVIDIA and it's expected that its next gen graphics cards will use Micron GDDR7 memory. Now, we know that, at least for Ray Tracing, one real-world benchmark is Cyberpunk 2077, and it could be also the case here, from the graphs it looks very much like Ray Tracing was tested with Path Tracing. For Rasterization performance another hard guess is that perhaps it's either Starfield or Assassin's Creed Mirage. Presumably, tests were made using also AMD RX 7900XTX, and NVIDIA RTX 4090 to get GDDR6 reference. Time will tell if we made the right prediction.

Micron Technology, Inc., today announced the sampling of its next-generation GDDR7 graphics memory with the industry's highest bit density. Leveraging Micron's 1β (1-beta) DRAM technology and innovative architecture, Micron GDDR7 delivers 32 Gb/s high-performance memory in a power-optimized design. With over 1.5 TB/s of system bandwidth, which is up to 60% higher bandwidth than GDDR6, and four independent channels to optimize workloads, Micron GDDR7 memory enables faster response times, smoother gameplay and reduced processing times.

GDDR7 also provides a greater than 50% power-efficiency improvement compared to GDDR6 to better thermals and lengthen battery life, while the new sleep mode reduces standby power by up to 70%. Advanced reliability, availability and serviceability (RAS) features on Micron GDDR7 enhance device dependability and data integrity without compromising performance, broadening the spectrum of applications for Micron GDDR7 to AI, gaming and high-performance computing workloads.

TrendForce reports that a reduction in supplier production has led to unmet demand for high-capacity orders since 4Q23. Combined with procurement strategies aimed at building low-cost inventory, this has driven orders and significantly boosted enterprise SSD revenue, which reached US$3.758 billion in 1Q24—a staggering 62.9% QoQ increase.

TrendForce further highlights that demand for high-capacity, driven by AI servers, has surged. North American clients increasingly adopt high-capacity QLC SSDs to replace HDDs, leading to over 20% growth in Q2 enterprise SSD bit procurement. This has also driven up Q2 enterprise SSD contract prices by more than 20%, with revenue expected to grow by another 20%.

Micron Technology, a leader in innovative data center solutions, today announced it has achieved its qualification sample milestone for the Micron CZ120 memory expansion modules using Compute Express Link (CXL). Micron is the first in the industry to achieve this milestone, which accelerates the adoption of CXL solutions within the data center to tackle the growing memory challenges stemming from existing data-intensive workloads and emerging artificial intelligence (AI) and machine learning (ML) workloads.

Using a new and emerging CXL standard, the CZ120 required substantial hardware testing for reliability, quality and performance across CPU providers and OEMs, along with comprehensive software testing for compatibility and compliance with OS and hypervisor vendors. This achievement reflects the collaboration and commitment across the data center ecosystem to validate the advantages of CXL memory. By testing the combined products for interoperability and compatibility across hardware and software, the Micron CZ120 memory expansion modules satisfy the rigorous standards for reliability, quality and performance required by customers' data centers.

Last year, Micron unveiled plans to construct a cutting-edge DRAM factory in Hiroshima, Japan. However, the project has faced a significant two-year delay, pushing back the initial timeline for mass production of the company's most advanced memory products. Originally slated to begin mass production by the end of 2025, Micron now aims to have the new facility operational by 2027. The complexity of integrating extreme ultraviolet lithography (EUV) equipment, which enables the production of highly advanced chips, has contributed to the delay. The Hiroshima plant will produce next-generation 1-gamma DRAM and high-bandwidth memory (HBM) designed for generative AI applications. Micron expects the HBM market, currently dominated by rivals SK Hynix and Samsung, to experience rapid growth, with the company targeting a 25% market share by 2025.

The project is expected to cost between 600 and 800 billion Japanese yen ($3.8 to $5.1 billion), with Japan's government covering one-third of the cost. Micron has received a subsidy of up to 192 billion yen ($1.2 billion) for construction and equipment, as well as a subsidy to cover half of the necessary funding to produce HBM at the plant, amounting to 25 billion yen ($159 million). Despite the delay, the increased investment in the factory reflects Micron's commitment to advancing its memory technology and capitalizing on the growing demand for HBM. An indication of that is the fact that customers have pre-ordered 100% of the HBM capacity for 2024, not leaving a single HBM die unused.

Malaysia is firmly positioning itself as a hub for semiconductor investment, with Prime Minister Anwar Ibrahim stating the country aims to attract over $100 billion in investment into the industry. This aligns with recent trends in the region, such as China's announcement of a massive $47.5 billion investment fund or Micron's plans to build a new chip factory in Hiroshima, Japan by the end of 2027.

As a major player accounting for 13% of global chip testing and packaging, Malaysia has benefited from strong investments by Intel ($7 billion for an advanced packaging plant) and Infineon ($5.4 billion to expand its power chip plant). The country now hopes around 10 local companies will make substantial investments in new facilities focused on chip design and advanced packaging. To support this goal, the Malaysian government plans to allocate $5.3 billion in fiscal backing, along with tax breaks and subsidies. It is targeting these investments to generate revenues between $210 million and $1 billion for the semiconductor industry in Malaysia.

TrendForce reports that adoption of enterprise SSDs by AI servers began in February, which subsequently led to large orders. Additionally, PC and smartphone customers have been increasing their inventory levels to manage rising prices. This trend drove up NAND Flash prices and shipment levels in 1Q24 and boosted quarterly revenue by 28.1% to US$14.71 billion.

There were significant changes in market rankings this quarter, with Micron overtaking Western Digital to claim the fourth spot. Micron benefited from slightly lower prices and shipments than its competitors in 4Q23, resulting in a 51.2% QoQ revenue growth to $1.72 billion in 1Q24—the highest among its peers.

According to Reuters, NVIDIA is having some major issues with Samsung's HBM3 chips, as NVIDIA hasn't managed to finalise its validations of the chips. Reuters are citing multiple sources that are familiar with the matter and it seems like Samsung is having some serious issues with its HMB3 chips if the sources are correct. Not only do the chips run hot, which itself is a big issue due to NVIDIA already having issues cooling some of its higher-end products, but the power consumption is apparently not where it should be either. Samsung is said to have tried to get its HBM3 and HBM3E parts validated by NVIDIA since sometime in 2023 according to Reuter's sources, which suggests that there have been issues for at least six months, if not longer.

The sources claim there are issues with both the 8- and 12-layer stacks of HMB3E parts from Samsung, suggesting that NVIDIA might only be able to supply parts from Micron and SK Hynix for now, the latter whom has been supplying HBM3 chips to NVIDIA since the middle of 2022 and HBM3E chips since March of this year. It's unclear if this is a production issue at Samsung's DRAM Fabs, a packaging related issue or something else entirely. The Reuter's piece goes on to speculating about Samsung not having had enough time to develop its HBM parts compared its competitors and that it's a rushed product, but Samsung issued a statement to the publication that it's a matter of customising the product for its customer's needs. Samsung also said that it's "the process of optimising its products through close collaboration with customers" without going into which customer(s). Samsung issued a further statement saying that "claims of failing due to heat and power consumption are not true" and that testing was going as expected.

JMicron Technology Corporation, in collaboration with Vinpower, Inc., have developed the first of its kind Enhanced 10Gbps Portable SSD (PSSD), using the collaboratively developed iVP817 IC Chip, that's compatible with Apple iOS devices supporting the iPhone iAP2. The PSSD offers super-fast Read/Write (R/W) data transfer speeds and is the first of its kind to provide Secure, High Powered, High-Speed backup and storage across all computing platforms, which includes the Apple iOS platform, as well as Android, PC, MacBook, Chromebook and more. While the R/W transfer speeds for USB flash storage devices compatible with smartphones and tablets typically range from 20 MB/sec to 80 MB/sec, the enhanced PSSD achieved verifiable R/W transfer speeds at more than 800 MB/sec with an iPhone 15Pro and 15Pro Max. That means, when using the enhanced PSSD with Vinpower's iAP2 based App, one could backup a 10 GB video, from an iPhone 15Pro or 15Pro Max, in around 12 seconds. On top of that, the PSSD will accommodate a range of NVMe SSD with varying form factor lengths and capacities up to and exceeding 8 TB of secure storage.

JMicron is a leading IC design company specialized in high-speed data and signal interfaces bridge controllers including NVMe to USB bridges, while Vinpower is a leader in designing IC chip firmware, circuit design, and manufacturing Apple iOS backup and storage devices and related Apps. The two companies recognized the enormous untapped market potential for a new solution that can perform smooth, fast, and secure data transfer and backup for portable mobile devices, especially for the Apple iOS platform, such as iPhones and iPads.

TrendForce reports that the three largest DRAM suppliers are increasing wafer input for advanced processes. Following a rise in memory contract prices, companies have boosted their capital investments, with capacity expansion focusing on the second half of this year. It is expected that wafer input for 1alpha nm and above processes will account for approximately 40% of total DRAM wafer input by the end of the year.

HBM production will be prioritized due to its profitability and increasing demand. However, limited yields of around 50-60% and a wafer area 60% larger than DRAM products mean a higher proportion of wafer input is required. Based on the TSV capacity of each company, HBM is expected to account for 35% of advanced process wafer input by the end of this year, with the remaining wafer capacity used for LPDDR5(X) and DDR5 products.

During the European Technology Symposium 2024, TSMC has announced its readiness to manufacture next-generation HBM4 base dies using both 12 nm and 5 nm nodes. This significant development is expected to substantially improve the performance, power consumption, and logic density of HBM4 memory, catering to the demands of high-performance computing (HPC) and artificial intelligence (AI) applications. The shift from a traditional 1024-bit interface to an ultra-wide 2048-bit interface is a key aspect of the new HBM4 standard. This change will enable the integration of more logic and higher performance while reducing power consumption. TSMC's N12FFC+ and N5 processes will be used to produce these base dies, with the N12FFC+ process offering a cost-effective solution for achieving HBM4 performance and the N5 process providing even more logic and lower power consumption at HBM4 speeds.

The company is collaborating with major HBM memory partners, including Micron, Samsung, and SK Hynix, to integrate advanced nodes for HBM4 full-stack integration. TSMC's base die, fabricated using the N12FFC+ process, will be used to install HBM4 memory stacks on a silicon interposer alongside system-on-chips (SoCs). This setup will enable the creation of 12-Hi (48 GB) and 16-Hi (64 GB) stacks with per-stack bandwidth exceeding 2 TB/s. TSMC's collaboration with EDA partners like Cadence, Synopsys, and Ansys ensures the integrity of HBM4 channel signals, thermal accuracy, and electromagnetic interference (EMI) in the new HBM4 base dies. TSMC is also optimizing CoWoS-L and CoWoS-R for HBM4 integration, meaning that massive high-performance chips are already utilizing this technology and getting ready for volume manufacturing.

Micron Technology, Inc., today announced the availability of Crucial LPCAMM2, the disruptive next-generation laptop memory form factor that features LPDDR5X mobile memory to level up laptop performance for professionals and creators. Consuming up to 58% less active power and with a 64% space savings compared to DDR5 SODIMMs, LPCAMM2 delivers higher bandwidth and dual-channel support with a single module. LPCAMM2 is an ideal high-performance memory solution for handling AI PC and complex workloads and is compatible with the powerful and versatile Lenovo ThinkPad P1 Gen 7 mobile workstations.

"LPCAMM2 is a game-changer for mobile workstation users who want to enjoy the benefits of the latest mobile high performance memory technology without sacrificing superior performance, upgradeability, power efficiency or space," said Jonathan Weech, senior director of product marketing for Micron's Commercial Products Group. "With LPCAMM2, we are delivering a future-proof memory solution, enabling faster speeds and longer battery life to support demanding creative and AI workloads."

Micron Technology, Inc. (Nasdaq: MU), today announced it is leading the industry by validating and shipping its high-capacity monolithic 32Gb DRAM die-based 128 GB DDR5 RDIMM memory in speeds up to 5,600 MT/s on all leading server platforms. Powered by Micron's industry-leading 1β (1-beta) technology, the 128 GB DDR5 RDIMM memory delivers more than 45% improved bit density, up to 22% improved energy efficiency and up to 16% lower latency over competitive 3DS through-silicon via (TSV) products.

Micron's collaboration with industry leaders and customers has yielded broad adoption of these new high-performance, large-capacity modules across high-volume server CPUs. These high-speed memory modules were engineered to meet the performance needs of a wide range of mission-critical applications in data centers, including artificial intelligence (AI) and machine learning (ML), high-performance computing (HPC), in-memory databases (IMDBs) and efficient processing for multithreaded, multicore count general compute workloads. Micron's 128 GB DDR5 RDIMM memory will be supported by a robust ecosystem including AMD, Hewlett Packard Enterprise (HPE), Intel, Supermicro, along with many others.

A few months ago, we covered proof of overclocking an off-the-shelf 2.5-inch SATA III NAND Flash SSD thanks to Gabriel Ferraz, Computer Engineer and TechPowerUp's SSD database maintainer. Now, he is back with another equally interesting project of modifying a Quad-Level Cell (QLC) SATA III SSD into a Single-Level Cell (SLC) SATA III SSD. Using the Crucial BX500 512 GB SSD, he aimed at transforming the QLC drive into a more endurant and higher-performance SLC. Silicon Motion SM2259XT2 powers the drive of choice with a single-core ARC 32-bit CPU clocked at 550 MHz and two channels running at 800 MT/s (400 MHz) without a DRAM cache. This particular SSD uses four NAND Flash dies from Micron with NY240 part numbers. Two dies are controlled per channel. These NAND Flash dies were designed to operate at 1,600 MT/s (800 MHz) but are limited to only 525 MT/s in this drive in the real world.

The average endurance of these dies is 1,500 P/E cycles in NANDs FortisFlash and about 900 P/E cycles in Mediagrade. Transforming the same drive in the pSLC is bumping those numbers to 100,000 and 60,000, respectively. However, getting that to work is the tricky part. To achieve this, you have to download MPtools for the Silicon Motion SM2259XT2 controller from the USBdev.ru website and find the correct die used in the SSD. Then, the software is modified carefully, and a case-sensitive configuration file is modified to allow for SLC mode, which forces the die to run as a SLC NAND Flash die. Finally, firmware folder must be reached and files need to be moved arround in a way seen in the video.

Micron Technology, Inc., one of the world's largest semiconductor companies and the only U.S.-based manufacturer of memory, and the Biden-Harris Administration today announced that they have signed a non-binding Preliminary Memorandum of Terms (PMT) for $6.1 billion in funding under the CHIPS and Science Act to support planned leading-edge memory manufacturing in Idaho and New York.

The CHIPS and Science Act grants of $6.1 billion will support Micron's plans to invest approximately $50 billion in gross capex for U.S. domestic leading-edge memory manufacturing through 2030. These grants and additional state and local incentives will support the construction of one leading-edge memory manufacturing fab to be co-located with the company's existing leading-edge R&D facility in Boise, Idaho and the construction of two leading-edge memory fabs in Clay, New York.