During a recent demonstration, Intel showcased its cutting-edge packaging technologies, EMIB (embedded multi-die interconnect bridge) and Foveros, unveiling the highly-anticipated Meteor Lake processor with integrated LPDDR5X memory. This move appears to align with Apple's successful integration of LPDDR memory into its M1 and M2 chip packages. At the heart of Intel's presentation was the quad-tile Meteor Lake CPU, leveraging Foveros packaging for its chiplets and boasting 16 GB of Samsung's LPDDR5X-7500 memory. Although the specific CPU configuration remains undisclosed, the 16 GB of integrated memory delivers a remarkable peak bandwidth of 120 GB/s, outperforming traditional memory subsystems using DDR5-5200 or LPDDR5-6400.

Nevertheless, this approach comes with trade-offs, such as the potential for system-wide failure if a memory chip malfunctions, limited upgradeability in soldered-down configurations, and the need for more advanced cooling solutions to manage CPU and memory heat. While Apple pioneered on-package LPDDR memory integration in client CPUs, Intel has a history of using package-on-package DRAM with its Atom-branded CPUs for tablets and ultrathin laptops. While this approach simplifies manufacturing, enabling slimmer notebook designs, it curtails configuration flexibility. We are yet to see if big laptop makers such as Dell, HP, and Asus, take on this design in the coming months.

collaboration with diverse industries and support various applications
Samsung Electronics, a world leader in advanced memory technology, today announced that it has developed the industry's first and highest-capacity 32-gigabit (Gb) DDR5 DRAM using 12 nanometer (nm)-class process technology. This achievement comes after Samsung began mass production of its 12 nm-class 16Gb DDR5 DRAM in May 2023. It solidifies Samsung's leadership in next-generation DRAM technology and signals the next chapter of high-capacity memory.

"With our 12 nm-class 32Gb DRAM, we have secured a solution that will enable DRAM modules of up to 1-terabyte (TB), allowing us to be ideally positioned to serve the growing need for high-capacity DRAM in the era of AI (Artificial Intelligence) and big data," said SangJoon Hwang, Executive Vice President of DRAM Product & Technology at Samsung Electronics. "We will continue to develop DRAM solutions through differentiated process and design technologies to break the boundaries of memory technology."

TrendForce expects that memory suppliers will continue their strategy of scaling back production of both DRAM and NAND Flash in 2024, with the cutback being particularly pronounced in the financially struggling NAND Flash sector. Market demand visibility for consumer electronic is projected to remain uncertain in 1H24. Additionally, capital expenditure for general-purpose servers is expected to be weakened due to competition from AI servers. Considering the low baseline set in 2023 and the current low pricing for some memory products, TrendForce anticipates YoY bit demand growth rates for DRAM and NAND Flash to be 13% and 16%, respectively. Nonetheless, achieving effective inventory reduction and restoring supply-demand balance next year will largely hinge on suppliers' ability to exercise restraint in their production capacities. If managed effectively, this could open up an opportunity for a rebound in average memory prices.

PC: The annual growth rate for average DRAM capacity is projected at approximately 12.4%, driven mainly by Intel's new Meteor Lake CPUs coming into mass production in 2024. This platform's DDR5 and LPDDR5 exclusivity will likely make DDR5 the new mainstream, surpassing DDR4 in the latter half of 2024. The growth rate in PC client SSDs will not be as robust as that of PC DRAM, with just an estimated growth of 8-10%. As consumer behavior increasingly shifts toward cloud-based solutions, the demand for laptops with large storage capacities is decreasing. Even though 1 TB models are becoming more available, 512 GB remains the predominant storage option. Furthermore, memory suppliers are maintaining price stability by significantly reducing production. Should prices hit rock bottom and subsequently rebound, PC OEMs are expected to face elevated SSD costs. This, when combined with Windows increasing its licensing fees for storage capacities at and above 1 TB, is likely to put a damper on further growth in average storage capacities.

TrendForce reports that rising demand for AI servers has driven growth in HBM shipments. Combined with the wave of inventory buildup for DDR5 on the client side, the second quarter saw all three major DRAM suppliers experience shipment growth. Q2 revenue for the DRAM industry reached approximately US$11.43 billion, marking a 20.4% QoQ increase and halting a decline that persisted for three consecutive quarters. Among suppliers, SK hynix saw a significant quarterly growth of over 35% in shipments. The company's shipments of DDR5 and HBM, both of which have higher ASP, increased significantly. As a result, SK hynix's ASP grew counter-cyclically by 7-9%, driving its Q2 revenue to increase by nearly 50%. With revenue reaching US$3.44 billion, SK hynix claimed the second spot in the industry, leading growth in the sector.

Samsung, with its DDR5 process still at 1Ynm and limited shipments in the second quarter, experienced a drop in its ASP by around 7-9%. However, benefitting from inventory buildup by module houses and increased demand for AI server setups, Samsung saw a slight increase in shipments. This led to an 8.6% QoQ increase in Q2 revenue, reaching US$4.53 billion, securing them the top position. Micron, ranking third, was a bit late in HBM development. However, DDR5 shipments held a significant proportion, keeping their ASP relatively stable. Boosted by shipments, its revenue was around US$2.95 billion, a quarterly increase of 15.7%. Both companies saw a reduction in their market share.

SK hynix Inc. (or "the company", www.skhynix.com) announced today that it has begun supplying the industry's first 24-gigabyte (GB) Low Power Double Data Rate 5X (LPDDR5X) mobile DRAM package to its customers, following the mass production of LPDDR5X in November 2022. SK hynix, in January, developed LPDDR5T, which is an upgraded product of LPDDR5X prior to the development of the 8th generation LPDDR6, and is currently processing customer validation.

"The company integrated the High-K Metal Gate (HKMG) process in the 24 GB LPDDR5X package, enabling the product to deliver outstanding power efficiency and performance," said SK hynix. "The addition of the 24 GB package to our mobile DRAM product portfolio has given us a more flexibility in accommodating customers' needs."

TrendForce highlights in its latest report that memory suppliers are boosting their production capacity in response to escalating orders from NVIDIA and CSPs for their in-house designed chips. These efforts include the expansion of TSV production lines to increase HBM output. Forecasts based on current production plans from suppliers indicate a remarkable 105% annual increase in HBM bit supply by 2024. However, due to the time required for TSV expansion, which encompasses equipment delivery and testing (9 to 12 months), the majority of HBM capacity is expected to materialize by 2Q24.

TrendForce analysis indicates that 2023 to 2024 will be pivotal years for AI development, triggering substantial demand for AI Training chips and thereby boosting HBM utilization. However, as the focus pivots to Inference, the annual growth rate for AI Training chips and HBM is expected to taper off slightly. The imminent boom in HBM production has presented suppliers with a difficult situation: they will need to strike a balance between meeting customer demand to expand market share and avoiding a surplus due to overproduction. Another concern is the potential risk of overbooking, as buyers, anticipating an HBM shortage, might inflate their demand.

During yesterday's HBM3 Gen2 memory products yesterday, Micron also shared an updated roadmap with select media and partners. The most interesting details on that roadmap were updates to DRAM and GDDR memory products, with increases in capacity coming for both types of memory. Micron is aiming to launch 32 Gbit or 4 GB DDR5 memory ICs somewhere in the beginning of 2024, which means we can look forward to 32 GB single sided DIMMs with a single DRAM die per memory IC. This should, in theory at least, enable cheaper 32 GB DIMMs, but as always, it's unlikely that the cost saving will be passed on to the end customer. As far as server customers goes, Micron is planning 128 GB DIMMs for 2024, followed by 192 GB DIMMs in 2025 and 256 GB DIMMs in 2026.

When it comes to GDDR, Micron will be launching JEDEC standard GDDR7 memory with 16 and 24 Gbit dies, or 2 and 3 GB capacity, the latter could be the highest capacity GDDR7 memory IC on the market and could see some interesting graphics card configurations. Micron is promising speeds of up to 32 Gbps per pin or 128 GB/s per chip, which is a big jump up from its current best GDDR6X memory which tops out at 24 Gbps per pin or 96 GB/s per chip. GDDR7 differs from Micron's proprietary GDDR6X by using PAM-3 rather than PAM-4 signalling, although this is simply something that the likes of AMD and NVIDIA would have to design their GPUs around. Micron doesn't appear to have any plans for GDDR7X at this point in time. The company is also working on several new iterations of HBM memory over the coming years, with the company expecting to hit 2 TB/s sometime in 2026 or later.

Samsung Electronics today reported financial results for the second quarter ended June 30, 2023. The Company posted KRW 60.01 trillion in consolidated revenue, a 6% decline from the previous quarter, mainly due to a decline in smartphone shipments despite a slight recovery in revenue of the DS (Device Solutions) Division. Operating profit rose sequentially to KRW 0.67 trillion as the DS Division posted a narrower loss, while Samsung Display Corporation (SDC) and the Digital Appliances Business saw improved profitability.

The Memory Business saw results improve from the previous quarter as its focus on High Bandwidth Memory (HBM) and DDR5 products in anticipation of robust demand for AI applications led to higher-than-guided DRAM shipments. System semiconductors posted a decline in profit due to lower utilization rates on weak demand from major applications.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced its participation at Flash Memory Summit 2023, taking place in person in Santa Clara, California, on August 8-10. CEO, Andy Hsu, will deliver a keynote address titled "New Architectures which will Drive Future 3D NAND and 3D DRAM Solutions" on August 9th at 11:40 a.m. Pacific Time.

Earlier this year, Neo Semiconductor announced the launch of its ground-breaking technology, 3D X-DRAM. This development is the world's first 3D NAND-like DRAM cell array that is targeted to solve DRAM's capacity bottleneck and replace the entire 2D DRAM market. 3D X-DRAM can be manufactured using the existing 3D NAND flash memory process with minor changes, significantly reducing the time and cost spent developing a new 3D process. During the keynote, Mr. Hsu will reveal the 3D X-DRAM process flow and technical details.

SK hynix Inc. today reported financial results for the second quarter of 2023. The company recorded revenue of 7.306 trillion won, operating loss of 2.882 trillion won (with operating margin of negative 39%), and net loss of 2.988 trillion won (with net margin of negative 41%) for the three-month period ended June 30, 2023.

"Amid an expansion in generative artificial intelligence (AI) market, which has largely been centered on ChatGPT, demand for AI server memory has increased rapidly," the company said. "As a result, sales of premium products such as HBM3 and DDR5 increased, leading to a 44% sequential increase in revenue for the second quarter, while operating loss narrowed by 15%."

Samsung Electronics, a world leader in advanced semiconductor technology, today announced that it has completed development of the industry's first Graphics Double Data Rate 7 (GDDR7) DRAM. It will first be installed in next-generation systems of key customers for verification this year, driving future growth of the graphics market and further consolidating Samsung's technological leadership in the field.

Following Samsung's development of the industry's first 24 Gbps GDDR6 DRAM in 2022, the company's 16-gigabit (Gb) GDDR7 offering will deliver the industry's highest speed yet. Innovations in integrated circuit (IC) design and packaging provide added stability despite high-speed operations. "Our GDDR7 DRAM will help elevate user experiences in areas that require outstanding graphics performance, such as workstations, PCs and game consoles, and is expected to expand into future applications such as AI, high-performance computing (HPC) and automotive vehicles," said Yongcheol Bae, Executive Vice President of Memory Product Planning Team at Samsung Electronics. "The next-generation graphics DRAM will be brought to market in line with industry demand and we plan on continuing our leadership in the space."

Scientists at the Tokyo Institute of Technology have developed a new type of stacked or 3D DRAM that the researchers call Bumpless Build Cube 3D or BBCube 3D, which relies on Through Silicon Vias or TSVs to connect the DRAM dies. This is a different approach to HBM which relies on micro bumps to connect the layers together and the Japanese scientists are saying that their bumpless wafer-on-wafer solution should allow not only for an easier manufacturing process, but more importantly, improved cooling, as the TSVs can channel the heat from the DRAM dies down into whatever substrate the BBCube 3D stack is finally mounted onto.

If that wasn't enough, the researchers believe that BBCube 3D will be able to deliver higher speeds than HBM courtesy of a combination of the TSVs being relatively short and "high-density signal parallelism". BBCube 3D is expected to deliver up to a 32 fold increase in bandwidth compared to DDR5 memory and a four fold increase compared to HBM2E memory, while at the same time, drawing less power. The research paper goes into a lot more details for those interested at taking a closer look at this potentially revolutionary shift in DRAM assembly. However, the question that remains unanswered is if this will end up as a real world product some time in the near future, which is all based on how manufacturable BBCube 3D memory will be.

TrendForce reports that continued production cuts by DRAM suppliers have led to a gradual quarterly decrease in overall DRAM supply. Seasonal demand, on the other hand, is helping to mitigate inventory pressure on suppliers. TrendForce projects that the third quarter will see the ASP for DRAM converging towards a 0~5% decline. Despite suppliers' concerted efforts, inventory levels persistently remain high, keeping prices low. While production cutbacks may help to curtail quarterly price declines, a tangible recovery in prices may not be seen until 2024.

PC DRAM: The benefits of consolidated production cuts on DDR4 by the top three suppliers are expected to become evident in the third quarter. Furthermore, inventory pressure on suppliers has been partially alleviated due to aggressive purchasing by several OEMs at low prices during 2Q23. Evaluating average price trends for PC DRAM products in 3Q23 reveals that DDR4 will continue to remain in a state of persistent oversupply, leading to an expected quarterly price drop of 3~8%. DDR5 prices—influenced by suppliers' efforts to maintain prices and unmet buyer demand—are projected to see a 0-5% quarterly decline. The overall ASP of PC DRAM is projected to experience a QoQ decline of 0~5% in the third quarter.

In keeping with Framework's philosophy, the Framework Laptop 16 has socketed memory and storage, making it easy for you to choose what you need on day one and upgrade to more any time later. Our pre-built configurations have set combinations of memory and storage, while on DIY Edition, you can choose any of the modules we offer in the Marketplace or bring your own if you prefer. We've taken both memory and storage to the next level on Framework Laptop 16. For memory, we've created new semi-custom Framework-branded DDR5-5600 modules. For storage, we have two M.2 slots, as well as the ability to add two more in the Expansion Bay for colossal storage capacity.

One core challenge we aimed to solve for memory on the Framework Laptop 16 was being able to offer the same modules for pre-built systems, DIY Edition, and the Framework Marketplace. Historically, we needed to source separate "OEM" modules from Samsung, SK Hynix, and Micron for use in our factory, and "Retail" modules from Crucial to offer in DIY Edition and the Marketplace. Instead, we worked with memory maker ADATA to create custom-label modules that we can use across all areas. Currently, we're leveraging SK Hynix DDR5-5600 memory chips for these modules, but may use other chips that meet the performance bar in the future as well.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is excited to announce a new white colored edition of its flagship Trident Z5 RGB series DDR5 memory, featuring extreme overclocked speeds of up to DDR5-8200 at 24 GB x 2 kit capacity.

The White Choice of Overclocked Performance DDR5 Memory
The new white version of the Trident Z5 RGB series boasts a sleek white aluminium heat spreader and features a black brushed-aluminium strip inset across the center, providing PC enthusiasts an ideal high-performance overclocked memory kit in a white themed PC build.

Hardware leaker MEGAsizeGPU has uploaded photos of unreleased G.Skill DIMMs—they claim that the leaked hardware "is the world's first 24G*2 DDR5 expo module: F5-6000J4048F24GX2-TZ5NR." The next-gen Trident Z5 memory is said to be rated for a 6000 MT/s data transfer rate, and close-up shots of labels on heatsinks point to the sample units being non-binary 24 GB DDR5 memory modules that can support EXPO profiles for AMD's Ryzen 7000-series CPUs. MEGAsizeGPU claims that "6000 MHz is the sweetspot for Ryzen" (AM5).

Off-screen captures show a PC system booting up in DDR5-6000 mode—within a Windows OS environment, CPU-Z demonstrates that these new Trident Z5 modules are based on SpecTek-made 24Gb DRAM ICs (instead of binary 16Gb)—SpecTek is a division working under Micron Technology. G.SKILL will likely be selling non-binary Z5 memory in pairs, so we expect to see matched 48 GB dual-channel kits popping up on the market soon. MEGAsizeGPU did not mention anything about pricing or availability. Kingston debuted its own non-binary memory offerings at Computex 2023, but presentation material on hand did not mention whether their new models support AMD's Extended Profiles for Overclocking (EXPO).

Micron Technology, Inc., one of the world's largest semiconductor companies, today announced plans to build a new assembly and test facility in Gujarat, India. Micron's new facility will enable assembly and test manufacturing for both DRAM and NAND products and address demand from domestic and international markets.

Phased construction of the new assembly and test facility in Gujarat is expected to begin in 2023. Phase 1, which will include 500,000 square feet of planned cleanroom space, will start to become operational in late 2024, and Micron will ramp capacity gradually over time in line with global demand trends. Micron expects Phase 2 of the project, which would include construction of a facility similar in scale to Phase 1, to start towards the second half of the decade.

Team Group unveiled its mighty Team Xtreem DDR5 memory for overclocking, at the 2023 Computex. These modules are designed such that their PCBs are shorter than their height, and instead of cramming RGB LEDs on top, the 2 mm-thick aluminium heat spreader turns into an extruded heatsink. Some of the higher speed versions of these run at DRAM voltages as high as 1.45 V, so the heatsink design should come in handy. The T-Force Xtreem comes in speeds ranging between DDR5-6400 and DDR5-8266, and in capacities ranging from 16 GB (2x 8 GB), going all the way up to 96 GB (2x 48 GB). The T-Force Xtreem RGB has an additional design element in the form of an acrylic RGB LED diffuser, although from the looks of it, this acrylic bit seems to be covering the fins of the heat spreader. It comes in the same speed-based and capacity based variants, as the regular Xtreem DDR5.

Samsung Electronics, a world leader in advanced memory technology, today announced that its 16-gigabit (Gb) DDR5 DRAM, which utilizes the industry's most advanced 12 nanometer (nm)-class process technology, has started mass production. Samsung's completion of the state-of-the-art manufacturing process reaffirms its leadership in cutting-edge DRAM technology.

"Using differentiated process technology, Samsung's industry-leading 12 nm-class DDR5 DRAM delivers outstanding performance and power efficiency," said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics. "Our latest DRAM reflects our continued commitment to leading the DRAM market, not only with high-performance and high-capacity products that meet computing market demand for large-scale processing but also by commercializing next-generation solutions that support greater productivity."

TrendForce's latest research indicates that, as production cuts to DRAM and NAND Flash have not kept pace with weakening demand, the ASP of some products is expected to decline further in 2Q23. DRAM prices are projected to fall 13~18%; NAND Flash is expected to fall between 8~13%.

TrendForce reports that the significant drop in DRAM prices was mostly attributed to high inventory levels of DDR4 and LPDDR5 as PC DRAM, server DRAM, and mobile DRAM collectively account for over 85% of DRAM consumption. Meanwhile, the market share for DDR5 remains relatively low.

Silicon Motion Technology Corporation ("Silicon Motion", the "Company" or "we") today announced its financial results for the quarter ended March 31, 2023. For the first quarter of 2023, net sales (GAAP) decreased sequentially to $124.1 million from $200.8 million in the fourth quarter of 2022. Net income (GAAP) decreased to $10.2 million, or $0.30 per diluted American Depositary Share ("ADS") (GAAP), from net income (GAAP) of $23.5 million, or $0.71 per diluted ADS (GAAP), in the fourth quarter of 2022.

For the first quarter of 2023, net income (non-GAAP) decreased to $11.2 million, or $0.33 per diluted ADS (non-GAAP), from net income (non-GAAP) of $41.1 million, or $1.22 per diluted ADS (non-GAAP), in the fourth quarter of 2022.

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced the launch of its ground-breaking technology, 3D X-DRAM. This development is the world's first 3D NAND-like DRAM cell array that is targeted to solve DRAM's capacity bottleneck and replace the entire 2D DRAM market. Relevant patent applications were published with the United States Patent Application Publication on April 6, 2023.

"3D X-DRAM will be the absolute future growth driver for the Semiconductor industry," said Andy Hsu, Founder and CEO of NEO Semiconductor and an accomplished technology inventor with more than 120 U.S. patents. "Today I can say with confidence that Neo is becoming a clear leader in the 3D DRAM market. Our invention, compared to the other solutions in the market today, is very simple and less expensive to manufacture and scale. The industry can expect to achieve 8X density and capacity improvements per decade with our 3D X-DRAM."

Yesterday SK Hynix reported its Q1 2023 results and to say that they were abysmal is being kind, as the company reported a 3.4 trillion won operating loss, or just over US$2.5 billion. That's no small hit to take for any company, especially when it's only the performance for a single quarter. However, SK Hynix is apparently trying to see its situation from a positive perspective and believes that the memory chip market will rebound in the second half of this year. The positive outlook isn't just based on what SK Hynix believes though, as various analysts and securities companies believe in an upswing in the second half of the year.

That said, Micron, one of SK Hynix main competitors, has a more drab outlook for the remainder of 2023 and is expecting a tough year ahead. SK Hynix is expecting production cuts by itself, Micron and Samsung to start to take effect sometime in the second quarter this year, which should see inventory drop to more normal levels for all three companies. SK Hynix is also expecting to see a higher demand for DDR5 DRAM later this year, especially in the mobile and server market space. Finally, SK Hynix is hoping that its customers will buy higher density memory products this year, replacing older, lower density solutions, be that DRAM or NAND flash related. SK Hynix is expecting to launch its Gen 5 10 nm DRAM and 238-layer NAND sometime next year, which the company is also hoping will bring more income to its coffers, but the company still has to make it through the rest of 2023 first.

Samsung Electronics today reported financial results for the first quarter ended March 31, 2023. The Company posted KRW 63.75 trillion in consolidated revenue, a 10% decline from the previous quarter, as overall consumer spending slowed amid the uncertain global macroeconomic environment. Operating profit was KRW 0.64 trillion as the DS (Device Solutions) Division faced decreased demand, while profit in the DX (Device eXperience) Division increased.

The DS Division's profit declined from the previous quarter due to weak demand in the Memory Business, a decline in utilization rates in the Foundry Business and continued weak demand and inventory adjustments from customers. Samsung Display Corporation (SDC) saw earnings in the mobile panel business decline quarter-on-quarter amid a market contraction, while the large panel business slightly narrowed its losses. The DX Division's results improved on the back of strong sales of the premium Galaxy S23 series as well as an enhanced sales mix focusing on premium TVs.

TrendForce reports that mass production of new server platforms—such as Intel Sapphire Rapids and AMD Genoa—is imminent. However, recent market reports have indicated a PMIC compatibility issue for server DDR5 RDIMMs; DRAM suppliers and PMIC vendors are working to address the problem. TrendForce believes this will have two effects: First, DRAM suppliers will temporarily procure more PMICs from Monolithic Power Systems (MPS), which supplies PMICs without any issues. Second, supply will inevitably be affected in the short term as current DDR5 server DRAM production still uses older processes, which will lead to a convergence in the price decline of DDR5 server DRAM in 2Q23—from the previously estimated 15~20% to 13~18%.

As previously mentioned, PMIC issues and the production process relying on older processes are all having a short-term impact on the supply of DDR5 server DRAM. SK hynix has gradually ramped up production and sales of 1α-nm, which, unlike 1y-nm, has yet to be fully verified by consumers. Current production processes are still being dominated by Samsung and SK hynix's 1y-nm and Micron's 1z-nm; 1α and 1β-nm production is projected to increase in 2H23.