Microsoft has announced its new Azure HBv5 virtual machines, featuring unique custom hardware made by AMD. CEO Satya Nadella made the announcement during Microsoft Ignite, introducing a custom-designed AMD processor solution that achieves remarkable performance metrics. The new HBv5 virtual machines deliver an extraordinary 6.9 TB/s of memory bandwidth, utilizing four specialized AMD processors equipped with HBM3 technology. This represents an eightfold improvement over existing cloud alternatives and a staggering 20-fold increase compared to previous Azure HBv3 configurations. Each HBv5 virtual machine boasts impressive specifications, including up to 352 AMD EPYC "Zen4" CPU cores capable of reaching 4 GHz peak frequencies. The system provides users with 400-450 GB of HBM3 RAM and features doubled Infinity Fabric bandwidth compared to any previous AMD EPYC server platform. Given that each VM had four CPUs, this yields 88 Zen 4 cores per CPU socket, with 9 GB of memory per core.

The architecture includes 800 Gb/s of NVIDIA Quantum-2 InfiniBand connectivity and 14 TB of local NVMe SSD storage. The development marks a strategic shift in addressing memory performance limitations, which Microsoft identifies as a critical bottleneck in HPC applications. This custom design particularly benefits sectors requiring intensive computational resources, including automotive design, aerospace simulation, weather modeling, and energy research. While the CPU appears custom-designed for Microsoft's needs, it bears similarities to previously rumored AMD processors, suggesting a possible connection to the speculated MI300C chip architecture. The system's design choices, including disabled SMT and single-tenant configuration, clearly focus on optimizing performance for specific HPC workloads. If readers can recall, Intel also made customized Xeons for AWS and their needs, which is normal in the hyperscaler space, given they drive most of the revenue.

Samsung Electronics today reported financial results for the third quarter ended Sept. 30, 2024. The Company posted KRW 79.1 trillion in consolidated revenue, an increase of 7% from the previous quarter, on the back of the launch effects of new smartphone models and increased sales of high-end memory products. Operating profit declined to KRW 9.18 trillion, largely due to one-off costs, including the provision of incentives in the Device Solutions (DS) Division. The strength of the Korean won against the U.S. dollar resulted in a negative impact on company-wide operating profit of about KRW 0.5 trillion compared to the previous quarter.

In the fourth quarter, while memory demand for mobile and PC may encounter softness, growth in AI will keep demand at robust levels. Against this backdrop, the Company will concentrate on driving sales of High Bandwidth Memory (HBM) and high-density products. The Foundry Business aims to increase order volumes by enhancing advanced process technologies. Samsung Display Corporation (SDC) expects the demand of flagship products from major customers to continue, while maintaining a quite conservative outlook on its performance. The Device eXperience (DX) Division will continue to focus on premium products, but sales are expected to decline slightly compared to the previous quarter.

Innodisk, a leading global AI solution provider, announces its DDR5 6400 DRAM series, featuring the industry's largest 64 GB single-module capacity. This 6400 series is purpose-built for data-intensive applications in AI, telehealth, and edge computing, where high performance at the edge is crucial. Available in versatile form factors, including CUDIMM, CSODIMM, and RDIMM, the series delivers unmatched speed, stability, and capacity to meet the rigorous demands of modern edge AI and industrial applications.

The DDR5 6400 series delivers a data transfer rate of 6400 MT/s, offering a 14% boost in speed over previous generations and doubling the maximum capacity to 64 GB. These enhancements make it an optimal choice for applications like Large Language Models (LLMs), generative AI, autonomous vehicles, and mixed reality, which require high-speed, reliable data processing in real time.

TrendForce reports that the focus on HBM products in the DRAM industry is increasingly turning attention toward advanced packaging technologies like hybrid bonding. Major HBM manufacturers are considering whether to adopt hybrid bonding for HBM4 16hi stack products but have confirmed plans to implement this technology in the HBM5 20hi stack generation.

Hybrid bonding offers several advantages when compared to the more widely used micro-bumping. Since it does not require bumps, it allows for more stacked layers and can accommodate thicker chips that help address warpage. Hybrid-bonded chips also benefit from faster data transmission and improved heat dissipation.

Kingston Technology Company, Inc., a world leader in memory products, announced the upcoming release of Kingston FURY Renegade DDR5 CUDIMMs, compatible with Intel's new 800-series chipset (formerly codenamed Arrow Lake). Intel's 800-series chipset is the first platform to utilize Clock Drivers on CUDIMMs (Clocked Unbuffered Dual Inline Memory Modules). At 6400 MT/s DDR5, JEDEC mandates the inclusion of a Client Clock Driver (CKD) on UDIMMs and SODIMMs. This component buffers and redrives the clock signal from the processor, enhancing signal integrity to the module. To distinguish these advanced modules from standard DDR5 UDIMMs and SODIMMs, JEDEC has designated them as CUDIMMs and CSODIMMs, respectively.

Kingston FURY Renegade RGB and non-RGB CUDIMM modules start at an overclocked speed of 8400 MT/s and are available as 24 GB single modules and 48 GB dual channel kits. Since CUDIMMs and UDIMMs share the same 288-pin connector, Kingston FURY UDIMMs with XMP and EXPO profiles are also compatible with Intel 800-series motherboards. However, it's recommended to verify compatibility through the motherboard manufacturer's QVL (Qualified Vendor List) or by checking the Kingston Configurator for supported speeds and capacities.

Kioxia Corporation, a world leader in memory solutions, today announced that the company's research papers have been accepted for presentation at IEEE International Electron Devices Meeting (IEDM) 2024, a prestigious international conference to be held in San Francisco, USA, from December 7th to 11th.

Kioxia is committed to the research and development of semiconductor memory, which is indispensable for the advancement of AI and the digital transformation of society. Beyond its state-of-the-art three-dimensional (3D) flash memory technology BiCS FLASH, Kioxia excels at research in emerging memory solutions. The company is constantly striving to meet the needs for future computing and storage systems with innovative memory products.

JEDEC Solid State Technology Association, the global leader in standards development for the microelectronics industry, today announced upcoming raw card designs currently in development in JEDEC's JC-45 Committee for DRAM Modules in collaboration with the JC-40 and JC-42 Committees. These raw card memory device standards are intended for use in client computing applications such as laptops and desktops and will be supported by related appendix specifications. The forthcoming raw cards will also complement two DDR5 Clock Driver standards published earlier this year: JESD323: DDR5 Clocked Unbuffered Dual Inline Memory Module (CUDIMM) Common Specification and JESD324: DDR5 Clocked Small Outline Dual Inline Memory Module (CSODIMM) Common Specification.

Integrating a Clock Driver (CKD) into a DDR5 DIMM provides numerous advantages, particularly in memory stability and performance, and enhances signal integrity and reliability at high speeds. By regenerating the clock signal locally on the DIMM, a CKD ensures stable operation even at elevated clock speeds. With a DDR5 CKD, DIMM data rates can be increased from 6400 Mbps to 7200 Mbps in the initial version of the standard, and targeting up to 9200 Mbps in future versions.

Advantech, a global leader in embedded computing, is excited to announce the release of the SQRAM CXL 2.0 Type 3 Memory Module. Compute Express Link (CXL) 2.0 is the next evolution in memory technology, providing memory expansion with a high-speed, low-latency interconnect designed to meet the demands of large AI Training and HPC clusters. CXL 2.0 builds on the foundation of the original CXL specification, introducing advanced features such as memory sharing, and expansion, enabling more efficient utilization of resources across heterogeneous computing environments.

Memory Expansion via E3.S 2T Form Factor
Traditional memory architectures are often limited by fixed allocations, which can result in underutilized resources and bottlenecks in data-intensive workloads. With the E3.S form factor, based on the EDSFF standard, the CXL 2.0 Memory Module overcomes these limitations, allowing for dynamic resource management. This not only improves performance but reduces costs by maximizing existing resources.

TrendForce's latest findings reveal that weaker consumer demand has persisted through 3Q24, leaving AI servers as the primary driver of memory demand. This dynamic, combined with HBM production displacing conventional DRAM capacity, has led suppliers to maintain a firm stance on contract price hikes.

Smartphone brands continue to remain cautious despite some server OEMs continuing to show purchasing momentum. Consequently, TrendForce forecasts that Q4 memory prices will see a significant slowdown in growth, with conventional DRAM expected to increase by only 0-5%. However, benefiting from the rising share of HBM, the average price of overall DRAM is projected to rise 8-13%—a marked deceleration compared to the previous quarter.

Today, Micron updated its corporate logo with new symbolism. The redesign comes as Micron celebrates over four decades of technological advancement in the semiconductor industry. The new logo features a distinctive silicon color, paying homage to the wafers at the core of Micron's products. Its curved lettering represents the company's ability to stay ahead of industry trends and adapt to rapid technological changes. The design also incorporates vibrant gradient colors inspired by light reflections on wafers, which are the core of Mircorn's memory and storage products.

This rebranding effort coincides with Micron's expanding role in AI, where memory and storage innovations are increasingly crucial. The company has positioned itself beyond a commodity memory supplier, now offering leadership in solutions for AI data centers, high-performance computing, and AI-enabled devices. The company has come far from its original 64K DRAM in 1981 to HBM3E DRAM today. Micron offers different HBM memory products, graphics memory powering consumer GPUs, CXL memory modules, and DRAM components and modules.

Apacer is thrilled to unveil its latest advancements in data security, reliability, and integrity for casino gaming systems in the Global Gaming Expo at the Expo Hall, taking place from October 8th to 10th, 2024. We invite you to visit us at booth 5221 to explore our state-of-the-art SSD and DRAM solutions, meticulously designed to address the demanding needs of the gaming industry.

At G2E 2024, Apacer will highlight a range of innovative products tailored to the unique requirements of gaming applications:

Intel's Arrow Lake-S launch line-up has been confirmed courtesy of serial leaker @9550pro on X/Twitter and although the leaked Intel product slide doesn't contain any real surprises by now, it does confirm that Intel will launch five different SKUs later this month. The Core 200S-series should be unveiled on Thursday by Intel, but retail availability isn't expected until the 24th of October. The Initial five CPU SKUs will be the Core Ultra 9 285K, the Core Ultra 7 265K and 265KF and finally the Core Ultra 5 245K and 245KF. As noted earlier today in the performance leak of the Core Ultra 9 285K, the entire Arrow Lake-S series will lack Hyper-Threading in favour of more E-cores. The Core Ultra 9 285K features eight Lion Cove P-cores and 16 Skymont E-cores, followed by the Core Ultra 7 265 SKUs which retain the Lion Cove core count, but ends up with only 12 Skymont cores. Finally, the Core Ultra 5 SKUs have six Lion Cove P-cores and eight Skymont E-cores. All the upcoming SKUs feature Intel's Thermal Velocity Boost, a feature that used to be exclusive to the Core i9 tier of CPUs in the past, but only the Core Ultra 9 and Ultra 7 SKUs support Intel Turbo Boost Max Technology 3.0. The Core Ultra 9 and Ultra 7 SKUs have a maximum TDP of 250 W, with the Core Ultra 5 SKUs peaking at 159 W. All five processors have a base power of 125 W.

As such, we're looking at boost speeds of up to 5.7 GHz for the Core Ultra 9, 5.5 GHz for the Core Ultra 7 and 5.2 GHz for the Core Ultra 5 processors. The Core Ultra 5 has the highest base frequency of the three SKUs with the P-cores clocking in at 4.2 GHz and the E-cores at 3.6 GHz. The Core Ultra 7 follows at 3.9 GHz for the P-Cores and 3.3 GHz for the E-cores and finally the Core Ultra 9 has a base frequency of 3.7 GHz for the P-Cores and 3.2 GHz for the E-cores. Intel has upped the JEDEC memory support to DDR5-6400, which is an 800 MHz jump in the officially supported memory speed from its 14th Gen Core i processors. Up to 192 GB of RAM is supported, which is the same as the previous generation of desktop CPUs from Intel. The IGP sports four Xe-cores across the board of the K SKU CPUs, with a base clock of 300 MHz and a boost clock of up to 2 GHz, although the Core Ultra 5 SKUs end up with an IGP that only boosts to 1.9 GHz. All SKUs also feature a third generation NPU capable of 13 TOPS, which is a lot weaker than the mobile Core Ultra 200V Lunar Lake CPUs which have an NPU capable of up to 48 TOPS, depending on the SKU. As this leak appears to be from the same original source as the performance figures that leaked earlier, we'd assume the information is correct, especially as it lines up with earlier leaks, but it should still be taken with a pinch of salt until everything has been confirmed by Intel.

Recent reports from South China Morning Post unveil developments in China's semiconductor industry, with significant progress in two critical areas: advanced memory chips and silicon photonics. These breakthroughs mark important steps in the country's pursuit of technological self-reliance amid global trade tensions. In Wuhan, a startup called Numemory has unveiled a new storage-class memory (SCM) chip. The "NM101" chip boasts an impressive 64 GB capacity, far surpassing the megabyte-range offerings currently dominating the market. This novel chip blends the strengths of traditional DRAM and NAND flash storage, delivering rapid, non-volatile, persistent memory ideal for server and data center applications. The NM101's design prioritizes high capacity, density, and bandwidth while maintaining low latency. These characteristics make it particularly well-suited for data centers and cloud computing infrastructures. Initial reports suggest that storage devices incorporating this SCM technology can write an entire 10 GB high-definition video file in a mere second.

Concurrently, another Wuhan-based institution, JFS Laboratory, has achieved a milestone in silicon photonics research. The state-backed facility successfully merged a laser light source with a silicon chip, a feat previously unrealized in China. This innovation in silicon photonics leverages light signals for data transmission, potentially circumventing the looming physical constraints of traditional electric signal-based chip designs. This accomplishment is viewed as addressing a crucial gap in China's optoelectronics capabilities, which used to lag behind Western chip designers and startups. Using silicon photonics, infrastructure scale-out can be sustained on a much larger scale without significant power consumption increase. While these developments represent significant progress, it's important to note that bridging the gap between laboratory breakthroughs and mass-produced, commercially viable products remains a substantial challenge. The path from research success to market dominance is often long and complex, requiring sustained investment and further technological refinement.

G.SKILL International Enterprise Co., Ltd., the world's leading brand of performance overclock memory and PC components, is thrilled to showcase an incredibly high-speed overclock of G.SKILL DDR5 memory at DDR5-9000 CL44-56-56 with 48 GB (24 GB x2) kit capacity, featuring AMD EXPO overclock profile and demonstrating the memory overclock capability of the ASUS ROG CROSSHAIR X870E HERO motherboard and the AMD Ryzen 7 8700G processor.

A New High-Speed Frontier with 24 GB x2 Continuing to explore the overclock limits of DDR5 memory speed in conjunction with the new ASUS NitroPath DRAM technology that provides enhanced DDR5 memory overclock performance, G.SKILL demonstrates an amazing DDR5-9000 CL44-56-56 with two 24 GB capacity modules. Refer to the screenshot below to see this G.SKILL memory kit reaching the astounding overclocked memory speed on the ASUS ROG CROSSHAIR X870E HERO motherboard with an AMD Ryzen 7 8700G processor

Innodisk, a leading global AI solution provider, continues to push the boundaries of innovation with the launch of its cutting-edge Compute Express Link (CXL) Memory Module, which is designed to meet the rapid growth demands of AI servers and cloud data centers. As one of the few module manufacturers offering this technology, Innodisk is at the forefront of AI and high-performance computing.

The demand for AI servers is rising quickly, with these systems expected to account for approximately 65% of the server market by 2024, according to Trendforce (2024). This growth has created an urgent need for greater memory bandwidth and capacity, as AI servers now require at least 1.2 TB of memory to operate effectively. Traditional DDR memory solutions are increasingly struggling to meet these demands, especially as the number of CPU cores continues to multiply, leading to challenges such as underutilized CPU resources and increasing latency between different protocols.

TrendForce reports that memory module makers have been aggressively increasing their DRAM inventories since 3Q23, with inventory levels rising to 11-17 weeks by 2Q24. However, demand for consumer electronics has not rebounded as expected. For instance, smartphone inventories in China have reached excessive levels, and notebook purchases have been delayed as consumers await new AI-powered PCs, leading to continued market contraction.

This has led to a weakening in spot prices for memory products primarily used in consumer electronics, with Q2 prices dropping over 30% compared to Q1. Although spot prices remained disconnected from contract prices through August, this divergence may signal potential future trends for contract pricing.

A critical security flaw known as "Sinkclose" (CVE-2023-31315) has been identified in all AMD processors dating back to 2006, potentially affecting hundreds of millions of devices worldwide. This vulnerability allows malicious actors to exploit the chip architecture, leading to unauthorized access to sensitive data. Researchers Enrique Nissim and Krzysztof Okupski, researchers from the security firm IOActive, have revealed that the vulnerability can be exploited through various methods, enabling attackers to extract confidential information from affected systems, including passwords and personal data. The issue is especially concerning, given that it is present in all AMD CPUs made in the last 18 years and their widespread use in both consumer and enterprise environments. However, to exploit this vulnerability, an attacker must possess access to system's kernel. Downloading of malware-infused files can trigger it, so general safety measures are recommended.

The Sinkclose method exploits a little-known capability in AMD processors called TClose. This name is a blend of "TClose" and "Sinkhole," with the latter referring to a previous vulnerability found in Intel's System Management Mode in 2015. AMD chips employ a protective mechanism named TSeg, which blocks operating systems from accessing a specific memory area reserved for System Management Mode (SMM), known as System Management Random Access Memory (SMRAM). However, the TClose feature is designed to maintain backward compatibility with older hardware that might use the same memory addresses as SMRAM. It does this by remapping memory when activated. The security experts discovered that they could manipulate this TClose remapping function using only standard operating system permissions. By doing so, they could deceive the SMM into retrieving altered data, enabling them to redirect the processor and run their own instructions with the high-level privileges of SMM. This technique essentially allows attackers to bypass standard security measures and execute malicious code at one of the most privileged levels of the processor, potentially compromising the entire system.

Samsung Electronics is set to make a significant leap in semiconductor manufacturing technology with the introduction of its first High-NA 0.55 EUV lithography tool. The company plans to install the ASML Twinscan EXE:5000 system at its Hwaseong campus between Q4 2024 and Q1 2025, marking a crucial step in developing next-generation process technologies for logic and DRAM production. This move positions Samsung about a year behind Intel but ahead of rivals TSMC and SK Hynix in adopting High-NA EUV technology. The system is expected to be operational by mid-2025, primarily for research and development purposes. Samsung is not just focusing on the lithography equipment itself but is building a comprehensive ecosystem around High-NA EUV technology.

The company is collaborating with several key partners like Lasertec (developing inspection equipment for High-NA photomasks), JSR (working on advanced photoresists), Tokyo Electron (enhancing etching machines), and Synopsys (shifting to curvilinear patterns on photomasks for improved circuit precision). The High-NA EUV technology promises significant advancements in chip manufacturing. With an 8 nm resolution capability, it could make transistors about 1.7 times smaller and increase transistor density by nearly three times compared to current Low-NA EUV systems. However, the transition to High-NA EUV comes with challenges. The tools are more expensive, costing up to $380 million each, and have a smaller imaging field. Their larger size also requires chipmakers to reconsider fab layouts. Despite these hurdles, Samsung aims for commercial implementation of High-NA EUV by 2027.

Imec, a world-leading research and innovation hub in nanoelectronics and digital technologies, presents patterned structures obtained after exposure with the 0.55NA EUV scanner in the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands. Random logic structures down to 9,5 nm (19 nm pitch), random vias with 30 nm center-to-center distance, 2D features at 22 nm pitch, and a DRAM specific lay out at P32nm were printed after single exposure, using materials and baseline processes that were optimized for High NA EUV by imec and its partners in the framework of imec's Advanced Patterning Program. With these results, imec confirms the readiness of the ecosystem to enable single exposure high-resolution High NA EUV Lithography.

Following the recent opening of the joint ASML-imec High NA EUV Lithography Lab in Veldhoven, the Netherlands, customers now have access to the (TWINSCAN EXE:5000) High NA EUV scanner to develop private High NA EUV use cases leveraging the customer's own design rules and lay outs.

Thermaltake, a leading PC DIY brand for premium hardware solutions, kicked off the "2024 Thermaltake RAM MOD Invitational" an annual competition that gathers modders from all corners of the world to mod the designated Thermaltake ram into their own masterpiece. This year we invited six modders from Austria, Italy, Japan, Thailand, and the United Kingdom to modify the TOUGHRAM XG RGB D5 Memory DDR5.

Participating modders are given a specific time frame to modify the RAM heatsinks, without changing the overall appearance and layout of the RAM itself. Contestants must only use our TOUGHRAM XG RGB D5 modules and cannot add the ram to a motherboard or a PC build. However, they can create a stand or platform for the modules but the overall modules must remain intact with the original design as the main focus.

Samsung Electronics, the world leader in advanced memory technology, today announced it has begun mass production for the industry's thinnest 12 nanometer (nm)-class, 12-gigabyte (GB) and 16 GB LPDDR5X DRAM packages, solidifying its leadership in the low-power DRAM market. Leveraging its extensive expertise in chip packaging, Samsung is able to deliver ultra-slim LPDDR5X DRAM packages that can create additional space within mobile devices, facilitating better airflow. This supports easier thermal control, a factor that is becoming increasingly critical especially for high-performance applications with advanced features such as on-device AI.

"Samsung's LPDDR5X DRAM sets a new standard for high-performance on-device AI solutions, offering not only superior LPDDR performance but also advanced thermal management in an ultra-compact package," said YongCheol Bae, Executive Vice President of Memory Product Planning at Samsung Electronics. "We are committed to continuous innovation through close collaboration with our customers, delivering solutions that meet the future needs of the low-power DRAM market."

GIGABYTE TECHNOLOGY Co. Ltd, a leading manufacturer of motherboards, graphics cards, and hardware solutions, released the GIGABYTE exclusive groundbreaking AI TOP Utility. With reinvented workflows, user-friendly interface, and real-time progress monitoring, AI TOP Utility provides a reinventing touch of local AI model training and fine-tuning. It features a variety of groundbreaking technologies that can be easily adapted by beginners or experts, for most common open-source LLMs, in anyplace even on your desk.

GIGABYTE AI TOP is the all-round solution for local AI Model Fine-tuning. Running local AI training and fine-tuning on sensitive data can relatively provide greater privacy and security with maximum flexibility and real-time adjustment. Collocating with GIGABYTE AI TOP hardware and AI TOP Utility, the common constraints of GPU VRAM insufficiency when trying to execute AI fine-tuning locally can be addressed. By GIGABYTE AI TOP series motherboard, PSU, and SSD, as well as GIGABYTE graphics cards lineup covering NVIDIA GeForce RTX 40 Series, AMD Radeon RX 7900 Series, Radeon Pro W7900 and W7800 series, the size of open-source LLM fine-tuning can now reach up to 236B and more.

An Innovate UK project worth £1.1M has been awarded to the Lancaster University spinout firm Quinas, the global semiconductor company IQE and Lancaster and Cardiff Universities. Quinas will coordinate the ambitious project which is the first step towards volume production of the universal computer memory ULTRARAM invented by Lancaster Physics Professor Manus Hayne.

ULTRARAM has extraordinary properties, combining the non-volatility of a data storage memory, like flash, with the speed, energy-efficiency, and endurance of a working memory, like DRAM. Most of the funding for the one-year project will be spent at IQE which will scale up the manufacture of compound semiconductor layers from Lancaster University to an industrial process at the Cardiff based firm. This will involve IQE developing advanced capability for growth of the compound semiconductors gallium antimonide and aluminium antimonide for the first time. The project follows significant investment to boost the UK semiconductor industry and the establishment of the world's first compound semiconductor cluster in South Wales.

South Korean giant SK Group has unveiled plans for substantial investments in AI and semiconductor technologies worth almost $75 billion. SK Group subsidiary, SK Hynix, will lead this initiative with a staggering 103 trillion won ($74.6 billion) investment over the next three years, with plans to realize the investment by 2028. This commitment is in addition to the ongoing construction of a $90 billion mega fab complex in Gyeonggi Province for cutting-edge memory production. SK Group has further pledged an additional $58 billion, bringing the total investment to a whopping $133 billion. This capital infusion aims to enhance the group's competitiveness in the AI value chain while funding operations across its 175 subsidiaries, including SK Hynix.

While specific details remain undisclosed, SK Group is reportedly exploring various options, including potential mergers and divestments. SK Group has signaled that business practices need change amid shifting geopolitical situations and the massive boost that AI is bringing to the overall economy. We may see more interesting products from SK Group in the coming years as it potentially enters new markets centered around AI. This strategic pivot comes after SK Hynix reported its first loss in a decade in 2022. However, the company has since shown signs of recovery, fueled by the surging demand for memory solutions for AI chips. The company currently has a 35% share of the global DRAM market and plans to have an even stronger presence in the coming years. The massive investment aligns with the South Korean government's recently announced $19 billion support package for the domestic semiconductor industry, which will be distributed across companies like SK Hynix and Samsung.

Micron Technology, Inc. (Nasdaq: MU) today announced results for its third quarter of fiscal 2024, which ended May 30, 2024.

Fiscal Q3 2024 highlights

• Revenue of $6.81 billion versus $5.82 billion for the prior quarter and $3.75 billion for the same period last year
• GAAP net income of $332 million, or $0.30 per diluted share
• Non-GAAP net income of $702 million, or $0.62 per diluted share
• Operating cash flow of $2.48 billion versus $1.22 billion for the prior quarter and $24 million for the same period last year

"Robust AI demand and strong execution enabled Micron to drive 17% sequential revenue growth, exceeding our guidance range in fiscal Q3," said Sanjay Mehrotra, President and CEO of Micron Technology. "We are gaining share in high-margin products like High Bandwidth Memory (HBM), and our data center SSD revenue hit a record high, demonstrating the strength of our AI product portfolio across DRAM and NAND. We are excited about the expanding AI-driven opportunities ahead, and are well positioned to deliver a substantial revenue record in fiscal 2025."