Intel Foundry Unveils Technology Advancements at IEDM 2024
Today at the IEEE International Electron Devices Meeting (IEDM) 2024, Intel Foundry unveiled new breakthroughs to help drive the semiconductor industry forward into the next decade and beyond. Intel Foundry showcased new material advancements that help improve interconnections within a chip, resulting in up to 25% capacitance by using subtractive ruthenium. Intel Foundry also was first to report a 100x throughput improvement using a heterogeneous integration solution for advanced packaging to enable ultra-fast chip-to-chip assembly. And to further drive gate-all-around (GAA) scaling, Intel Foundry demonstrated work with silicon RibbonFET CMOS and with gate oxide module for scaled 2D FETs for improved device performance.
"Intel Foundry continues to help define and shape the roadmap for the semiconductor industry. Our latest breakthroughs underscore the company's commitment to delivering cutting-edge technology developed in the U.S., positioning us well to help balance the global supply chain and restore domestic manufacturing and technology leadership with the support of the U.S. CHIPS Act," says Sanjay Natarajan, Intel senior vice president and general manager of Intel Foundry Technology Research.
"Intel Foundry continues to help define and shape the roadmap for the semiconductor industry. Our latest breakthroughs underscore the company's commitment to delivering cutting-edge technology developed in the U.S., positioning us well to help balance the global supply chain and restore domestic manufacturing and technology leadership with the support of the U.S. CHIPS Act," says Sanjay Natarajan, Intel senior vice president and general manager of Intel Foundry Technology Research.