Multiple hardware versions found.
Performance could vary due to unannounced flash/controller changes.
Capacity: | 256 GB |
---|---|
Variants: | 128 GB 256 GB 512 GB 1 TB 2 TB |
Hardware Versions: | |
Overprovisioning: | 17.6 GB / 7.4 % |
Production: | Active |
Released: | 2021 |
Part Number: | ASU800SS-256GT-C |
Market: | Consumer |
Form Factor: | 2.5" |
---|---|
Interface: | SATA 6 Gbps |
Protocol: | AHCI |
Power Draw: |
0.06 W (Idle) Unknown (Avg) Unknown (Max) |
Manufacturer: | Silicon Motion |
---|---|
Name: | SM2258H |
Architecture: | ARC |
Core Count: | Single-Core |
Frequency: | 400 MHz |
Foundry: | TSMC |
Process: | 40 nm |
Flash Channels: | 4 |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
---|---|
Name: | V-NAND V4 |
Type: | TLC |
Technology: | 64-layer |
Speed: | 1000 MT/s |
Capacity: | Unknown |
Toggle: | 3.0 |
Topology: | Charge Trap |
Process: | 20 nm |
Die Size: | 128 mm² (4.0 Gbit/mm²) |
Planes per Die: | 2 |
Decks per Die: | 1 |
Word Lines: |
72 per NAND String
88.9% Vertical Efficiency |
Read Time (tR): | 45 µs |
Program Time (tProg): | 700 µs |
Block Erase Time (tBERS): | 3.5 ms |
Endurance: (up to) |
7000 P/E Cycles
(20000 in SLC Mode) |
Page Size: | 16 KB |
Block Size: | 768 Pages |
Plane Size: | 5748 Blocks |
Type: | DDR3-1600 CL11 |
---|---|
Capacity: |
256 MB
(1x 256 MB) |
Organization: | 2Gx16 |
Sequential Read: | 560 MB/s |
---|---|
Sequential Write: | 520 MB/s |
Random Read: | 80,000 IOPS |
Random Write: | 85,000 IOPS |
Endurance: | 200 TBW |
Warranty: | 5 Years |
MTBF: | 2.0 Million Hours |
Drive Writes Per Day (DWPD): | 0.4 |
SLC Write Cache: | Yes |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |