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HippStor HP600 3 TB

3 TB
Capacity
DP616
Controller
TLC
Flash
PCIe 4.0 x4
Interface
U.2
Form Factor
Front
SSD Controller
Controller
NAND Die
NAND Die
The HippStor HP600 is a solid-state drive in the U.2 form factor, launched on November 18th, 2023. It is available in capacities ranging from 3 TB to 7.5 TB. This page reports specifications for the 3 TB variant. With the rest of the system, the HippStor HP600 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the DPU616A0 from DapuStor, a DRAM cache chip is available. HippStor has installed 176-layer TLC NAND flash on the HP600, the flash chips are made by SK Hynix. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The HP600 is rated for sequential read speeds of up to 7,400 MB/s and 7,100 MB/s write; random IOPS reach up to 1750K for reads and 620K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. HippStor guarantees an endurance rating of 17520 TBW, a very high value, making this drive a good choice for write-intensive enterprise applications.

Solid-State-Drive

Capacity: 3 TB (3200 GB)
Variants: 3 TB 3.8 TB 6 TB 7.5 TB
Overprovisioning: 1115.8 GB / 37.4 %
Production: Active
Released: Nov 18th, 2023
Part Number: Unknown
Market: Enterprise

Physical

Form Factor: U.2
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 5.5 W (Idle)
12.5 W (Avg)
17.5 W (Max)

Controller

Manufacturer: DapuStor
Name: DPU616A0
Architecture: ARM Cortex-A53
Core Count: 8-Core
Frequency: 1,800 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 16 @ 1,600 MT/s
Chip Enables: 8
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: SK Hynix
Name: V7
Type: TLC
Technology: 176-layer
Speed: 1600 MT/s
Capacity: Unknown
Toggle: 5.0
Topology: Charge Trap
Die Size: 47 mm²
(10.9 Gbit/mm²)
Planes per Die: 4
Word Lines: 196 per NAND String
89.8% Vertical Efficiency
Read Time (tR): 50 µs
Program Time (tProg): 380 µs
Die Read Speed: 1280 MB/s
Die Write Speed: 168 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 4224 Pages
Plane Size: 1084 Blocks

DRAM Cache

Type: DDR4
Capacity: Unknown

Performance

Sequential Read: 7,400 MB/s
Sequential Write: 7,100 MB/s
Random Read: 1,750,000 IOPS
Random Write: 620,000 IOPS
Endurance: 17520 TBW
Warranty: 5 Years
MTBF: 2.0 Million Hours
Drive Writes Per Day (DWPD): 3.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • AES-256
RGB Lighting: No
PS5 Compatible: No

Notes

NAND Die:

Endurance: 1.500 to 3.000 P.E.C.
tPROG withouth Overhead: ~ 380 µs (accounting for ~ 168 MB/s of throughput per die)
tPROG w/ +/- 25% Overhead: ~ 507 µs (accounting for ~ 126 MB/s of throughput per die)
NAND string : H25G9TC18488 NAND MaxPE cycles: 1500 NAND Freq : 1200 Channel number: 4 CE number : 4 Total Bank: 16 Flash Type: TLC Blocks/CE: 1084 Pages/Block: 4224 Page Size
Jan 22nd, 2025 15:03 EST change timezone

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