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Huawei eKitStor Xtreme 200E 1 TB

1 TB
Capacity
Unknown
Controller
QLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
PCB Front
PCB Front
NAND Die
NAND Die
The Huawei eKitStor Xtreme 200E is a solid-state drive in the M.2 2280 form factor, launched on December 30th, 2024. It is available in capacities ranging from 512 GB to 1 TB. This page reports specifications for the 1 TB variant. With the rest of the system, the Huawei eKitStor Xtreme 200E interfaces using a PCI-Express 4.0 x4 connection. The actual SSD controller chip used it unknown, we'll update this page when we find out more. , a DRAM cache is not available. Huawei has installed 232-layer QLC NAND flash on the eKitStor Xtreme 200E, the flash chips are made by YMTC. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are handled more quickly. The cache is sized at 260 GB. Copying data out of the SLC cache (folding) completes at 98 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The eKitStor Xtreme 200E is rated for sequential read speeds of up to 7,000 MB/s and 6,500 MB/s write; random IO reaches 900K IOPS for read and 1000K for writes.
At its launch, the SSD was priced at 32 USD. The warranty length is set to five years, which is an excellent warranty period. Huawei guarantees an endurance rating of 400 TBW, a relatively low value compared to other SSDs.

Solid-State-Drive

Capacity: 1 TB (1024 GB)
Variants: 512 GB 1 TB
Overprovisioning: 70.3 GB / 7.4 %
Production: Active
Released: Dec 30th, 2024
Price at Launch: 32 USD
Part Number: Unknown
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 2.0
Power Draw: Unknown

Controller

Model: Unknown

NAND Flash

Manufacturer: YMTC
Name: Xtacking 3.0 (X3-6070)
Type: QLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: 2 chips @ 4 Tbit
ONFI: 5.0
Topology: Charge Trap
Die Size: 52 mm²
(19.7 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 4
Decks per Die: 2
Word Lines: 253 per NAND String
91.7% Vertical Efficiency
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB

DRAM Cache

Type: None

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 6,500 MB/s
Random Read: 900,000 IOPS
Random Write: 1,000,000 IOPS
Endurance: 400 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 0.2
SLC Write Cache: approx. 260 GB
(dynamic only)
Cache Folding Speed: 98 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Notes

NAND Die:

Some Batchs of these wafers can be sold at @ 1.000 P.E.C.

Jan 22nd, 2025 11:53 EST change timezone

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