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Kioxia CD8-R 7.5 TB

7.5 TB
Capacity
TC58NC1030GTB V2
Controller
TLC
Flash
PCIe 4.0 x4
Interface
U.2
Form Factor
Front
SSD Controller
Controller
The Kioxia CD8-R is a solid-state drive in the U.2 form factor, launched in 2021. It is only available in the 7.5 TB capacity listed on this page. With the rest of the system, the Kioxia CD8-R interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the TC58NC1030GTB V2 from Kioxia, a DRAM cache chip is available. Kioxia has installed 112-layer TLC NAND flash on the CD8-R, the flash chips are made by Kioxia. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The CD8-R is rated for sequential read speeds of up to 7,100 MB/s and 6,000 MB/s write; random IO reaches 1150K IOPS for read and 200K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Kioxia guarantees an endurance rating of 14016 TBW, a high value.

Solid-State-Drive

Capacity: 7.5 TB (7680 GB)
Overprovisioning: Unknown
Production: Active
Released: 2021
Part Number: KCD81RUG7T68
Market: Enterprise
Part Number SIE:KCD8XRUG7T68
Part Number SED:KCD8DRUG7T68

Physical

Form Factor: U.2
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: 5.0 W (Idle)
Unknown (Avg)
19.0 W (Max)

Controller

Manufacturer: Kioxia
Name: TC58NC1030GTB V2
Architecture: ARM 32-bit Cortex-M3
Foundry: TSMC
Flash Channels: 8 @ 1,200 MT/s
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Kioxia
Name: BiCS5
Part Number: TH58LKT3V25BB8N
Type: TLC
Technology: 112-layer
Speed: 1200 MT/s
Capacity: 8 chips @ 8 Tbit
Toggle: 4.0
Topology: Charge Trap
Dies per Chip: 16 dies @ 512 Gbit
Planes per Die: 2
Word Lines: 128 per NAND String
87.5% Vertical Efficiency
Read Time (tR): 56 µs
Program Time (tProg): 484 µs
Die Read Speed: 571 MB/s
Die Write Speed: 66 MB/s
Endurance:
(up to)		 3000 P/E Cycles
(100000 in SLC Mode)
Page Size: 16 KB
Block Size: 1344 Pages
Plane Size: 448 Blocks
NAND 2 Manufacturer:Kioxia
NAND 2 Name:BiCS5
NAND 2 Part Number:TH58LKT1V25BA8C
NAND 2 Type:TLC
NAND 2 Technology:112-Layers
NAND 2 Speed:1200 MT/s
NAND 2 Capacity:1 chips
NAND 2 Toggle:4.0
NAND 2 Topology:Charge Trap
NAND 2 Dies per chip:4 dies
NAND 2 Planes per die:2 planes
NAND 2 Word Lines:128 per NAND String (87.5% Vertical Efficiency)
NAND 2 Endurance:3000 P.E.C. (upt to)

DRAM Cache

Type: DDR4-3200 CL22
Name: SK Hynix H5AN8G8NDJR-XNC
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx8
DRAM 2 Type:DDR4
DRAM 2 Speed:3200 MT/s
DRAM 2 Latency:CL-22
DRAM 2 Total Capacity:8GB
DRAM 2 Organization:x8
DRAM 2 Chip Count:8192 MB (4x 2048 MB)
DRAM Name:SK Hynix H5ANAG8NCJR-XNC

Performance

Sequential Read: 7,100 MB/s
Sequential Write: 6,000 MB/s
Random Read: 1,150,000 IOPS
Random Write: 200,000 IOPS
Endurance: 14016 TBW
Warranty: 5 Years
MTBF: 2.5 Million Hours
Drive Writes Per Day (DWPD): 1.0
Write Cache: N/A

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: Yes
Encryption:
  • TCG Opal
RGB Lighting: No
PS5 Compatible: No

Notes

Controller:

A multi-core based Arm Cortex-M3 controller.

NAND Die:

Although this Die is a 4-plane design, most Kioxia BiCS5 NAND Dies used in most SSDs are dual planes design because of Yield and production cost.
And because of the die being dual-plane the Throughput is cut in half to 66 MB/s per die.
There is no CuA (Circuitry under Array) in the Dual-Plane variant.
Typical Endurance: 1700 ~ 3000 P.E.C.
Typ. Endurance eTLC: 5.000 ~ 7.000 P.E.C.
Nov 23rd, 2024 00:48 EST change timezone

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