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Lexar NM800 512 GB

512 GB
Capacity
IG5236
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor

Multiple hardware versions found.

Performance could vary due to unannounced flash/controller changes.

Package
Package
SSD Controller
Controller
NAND Die
NAND Die
The Lexar NM800 is a solid-state drive in the M.2 2280 form factor, launched on September 15th, 2021. It is available in capacities ranging from 512 GB to 1 TB. This page reports specifications for the 512 GB variant. With the rest of the system, the Lexar NM800 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the IG5236 (Rainier) from InnoGrit. Lexar has installed 64-layer TLC NAND flash on the NM800, the flash chips are made by YTMC. Please note that this SSD is sold in multiple variants with different NAND flash or controller, which could affect performance, the "Notes" section at the end of this page has more info. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are absorbed more quickly. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The NM800 is rated for sequential read speeds of up to 7,000 MB/s and 3,000 MB/s write; random IO reaches 200K IOPS for read and 550K for writes.
At its launch, the SSD was priced at 88 USD. The warranty length is set to five years, which is an excellent warranty period. Lexar guarantees an endurance rating of 1500 TBW, a high value.

Solid-State-Drive

Capacity: 512 GB
Variants: 512 GB 1 TB
Overprovisioning: 35.2 GB / 7.4 %
Production: Active
Released: Sep 15th, 2021
Price at Launch: 88 USD
Part Number: LNM800X512G-RNNNG
Market: Consumer

Physical

Form Factor: M.2 2280 (Single-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.4
Power Draw: Unknown

Controller

Manufacturer: InnoGrit
Name: IG5236 (Rainier)
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 667 MHz
Foundry: TSMC FinFET
Process: 12 nm
Flash Channels: 8 @ 1,200 MT/s
Chip Enables: 4
Controller Features: DRAM

NAND Flash

Manufacturer: YTMC
Name: Xtacking 1.0
Rebranded: (Rebranded by Lexar)
Type: TLC
Technology: 64-layer
Speed: 800 MT/s
Capacity: 2 chips @ Unknown
ONFI: 4.0
Topology: Charge Trap
Process: 40 nm
Die Size: 58 mm²
(4.4 Gbit/mm²)
Planes per Die: 2
Decks per Die: 1
Word Lines: 73 per NAND String
87.7% Vertical Efficiency
Read Time (tR): 74 µs
Program Time (tProg): 760 µs
Block Erase Time (tBERS): 9.0 ms
Die Read Speed: 432 MB/s
Die Write Speed: 42 MB/s
Endurance:
(up to)
1500 P/E Cycles
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1006 Blocks

DRAM Cache

Type: Unknown
Capacity: 512 MB
(1x 512 MB)

Performance

Sequential Read: 7,000 MB/s
Sequential Write: 3,000 MB/s
Random Read: 200,000 IOPS
Random Write: 550,000 IOPS
Endurance: 1500 TBW
Warranty: 5 Years
MTBF: 1.5 Million Hours
Drive Writes Per Day (DWPD): 1.6
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Notes

Drive:

Could also be YMTC's 2nd Generation Xtacking 2.0 (128-Layers)

NAND Die:

Array Eficiency of over 90%
The 64-Word Layers NAND Die from YMTC actuall has 73-Gate Layers, being 64 for storage, 5 DWL (Dummy Word Layers) alongside 4 select Gates (1 SG and 3 Drain SGs)

PS: Bit-line pitch is 40nm
NAND Die Endurance: From 1500 to 3000 P.E.C.
NAND Flash Bus: Up to 800 MT/s
Page Read in SLC Mode: 34µs
Page Write in SLC Mode: 34µs
Block Erase in SLC Mode: 3.3ms

Nov 6th, 2024 00:22 EST change timezone

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