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Nextorage NE5N Series 2 TB

2 TB
Capacity
Phison E26
Controller
TLC
Flash
PCIe 5.0 x4
Interface
M.2 2280
Form Factor
SSD Controller
Controller
NAND Die
NAND Die
The Nextorage NE5N Series is a solid-state drive in the M.2 2280 form factor, launched on May 8th, 2023. It is available in capacities ranging from 1 TB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Nextorage NE5N Series interfaces using a PCI-Express 5.0 x4 connection. The SSD controller is the PS5026-E26 from Phison, a DRAM cache chip is available. Nextorage has installed 232-layer TLC NAND flash on the NE5N Series, the flash chips are made by Micron. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. Thanks to support for the fast PCI-Express 5.0 interface, performance is excellent. The NE5N Series is rated for sequential read speeds of up to 10,000 MB/s and 10,000 MB/s write; random IOPS reach up to 1400K for reads and 1400K for writes.
The SSD's price at launch is unknown. The warranty length is set to five years, which is an excellent warranty period. Nextorage guarantees an endurance rating of 1400 TBW, a typical value for consumer SSDs.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 1 TB 2 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: Active
Released: May 8th, 2023
Part Number: NE5N2TB /FHNE SYM
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 5.0 x4
Protocol: AHCI
Power Draw: Unknown (Idle)
Unknown (Avg)
11.0 W (Max)

Controller

Manufacturer: Phison
Name: PS5026-E26
Architecture: ARM 32-bit Cortex-R5 + AndesCore 32-bit N25F RISC-V
Core Count: 5-Core
Frequency: 1,000 MHz
Foundry: TSMC
Process: 12 nm
Flash Channels: 8 @ 2,400 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Micron
Name: B58R FortisFlash
Type: TLC
Technology: 232-layer
Speed: 2400 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 5.0
Topology: Replacement Gate
Die Size: 70 mm²
(14.6 Gbit/mm²)
Dies per Chip: 4 dies @ 1 Tbit
Planes per Die: 6
Decks per Die: 2
Word Lines: 255 per NAND String
91.0% Vertical Efficiency
Read Time (tR): 61 µs
Program Time (tProg): 600 µs
Block Erase Time (tBERS): 15 ms
Die Read Speed: 1574 MB/s
Die Write Speed: 160 MB/s
Endurance:
(up to)
3000 P/E Cycles
Page Size: 16 KB
Block Size: 2784 Pages
Plane Size: 3402 Blocks

DRAM Cache

Type: LPDDR4-4266
Name: SK Hynix H9HCNNNCPUMLXR-NEE
Capacity: 4096 MB
(1x 4096 MB)

Performance

Sequential Read: 10,000 MB/s
Sequential Write: 10,000 MB/s
Random Read: 1,400,000 IOPS
Random Write: 1,400,000 IOPS
Endurance: 1400 TBW
Warranty: 5 Years
MTBF: 1.6 Million Hours
Drive Writes Per Day (DWPD): 0.4
SLC Write Cache: Yes

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • Unknown
RGB Lighting: No
PS5 Compatible: Yes

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Controller:

This controller features a dual core Cortex-R5 as a primary cores, while a Tripple AndesCore 32-bit N25F RISC-V at 400-500 MHz act as a CoX Processor.

NAND Die:

2-Deck design with 116 word line per deck
Upper deck: 128-Gates
Lower Deck: 127-gates
Programming Throughput - not confirmed, calculated by estimated tPROG
tPROG - Estimated, not confirmed

Nov 6th, 2024 00:17 EST change timezone

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