Capacity: | 2 TB (2000 GB) |
---|---|
Variants: | 1 TB 2 TB |
Overprovisioning: | 185.4 GB / 10.0 % |
Production: | Active |
Released: | May 8th, 2023 |
Part Number: | NE5N2TB /FHNE SYM |
Market: | Consumer |
Form Factor: | M.2 2280 (Double-Sided) |
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Interface: | PCIe 5.0 x4 |
Protocol: | AHCI |
Power Draw: |
Unknown (Idle) Unknown (Avg) 11.0 W (Max) |
Manufacturer: | Phison |
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Name: | PS5026-E26 |
Architecture: | ARM 32-bit Cortex-R5 + AndesCore 32-bit N25F RISC-V |
Core Count: | 5-Core |
Frequency: | 1,000 MHz |
Foundry: | TSMC |
Process: | 12 nm |
Flash Channels: | 8 @ 2,400 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Micron |
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Name: | B58R FortisFlash |
Type: | TLC |
Technology: | 232-layer |
Speed: | 2400 MT/s |
Capacity: | 4 chips @ 4 Tbit |
ONFI: | 5.0 |
Topology: | Replacement Gate |
Die Size: | 70 mm² (14.6 Gbit/mm²) |
Dies per Chip: | 4 dies @ 1 Tbit |
Planes per Die: | 6 |
Decks per Die: | 2 |
Word Lines: |
255 per NAND String
91.0% Vertical Efficiency |
Read Time (tR): | 61 µs |
Program Time (tProg): | 600 µs |
Block Erase Time (tBERS): | 15 ms |
Die Read Speed: | 1574 MB/s |
Die Write Speed: | 160 MB/s |
Endurance: (up to) |
3000 P/E Cycles |
Page Size: | 16 KB |
Block Size: | 2784 Pages |
Plane Size: | 3402 Blocks |
Type: | LPDDR4-4266 |
---|---|
Name: | SK Hynix H9HCNNNCPUMLXR-NEE |
Capacity: |
4096 MB
(1x 4096 MB) |
Sequential Read: | 10,000 MB/s |
---|---|
Sequential Write: | 10,000 MB/s |
Random Read: | 1,400,000 IOPS |
Random Write: | 1,400,000 IOPS |
Endurance: | 1400 TBW |
Warranty: | 5 Years |
MTBF: | 1.6 Million Hours |
Drive Writes Per Day (DWPD): | 0.4 |
SLC Write Cache: | Yes |
TRIM: | Yes |
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SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
Controller:This controller features a dual core Cortex-R5 as a primary cores, while a Tripple AndesCore 32-bit N25F RISC-V at 400-500 MHz act as a CoX Processor. NAND Die:2-Deck design with 116 word line per deck |