Capacity: | 2 TB (2048 GB) |
---|---|
Variants: | 512 GB 1 TB 2 TB |
Overprovisioning: | 140.7 GB / 7.4 % |
Production: | Active |
Released: | 2023 |
Price at Launch: | 159 USD |
Part Number: | PCH-ALDPRO-2TB |
Market: | Consumer |
Form Factor: | M.2 2280 (Double-Sided) |
---|---|
Interface: | PCIe 4.0 x4 |
Protocol: | NVMe 1.4 |
Power Draw: |
1.8 W (Idle) 4.7 W (Avg) 7.4 W (Max) |
Manufacturer: | InnoGrit |
---|---|
Name: | IG5236 (Rainier) |
Architecture: | ARM 32-bit Cortex-R5 |
Core Count: | Quad-Core |
Frequency: | 667 MHz |
Foundry: | TSMC FinFET |
Process: | 12 nm |
Flash Channels: | 8 @ 1,200 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM (enabled) |
Manufacturer: | YMTC |
---|---|
Name: | Xtacking 2.0 (CDT1B) |
Part Number: | SYMN09TC1B1RC6C |
Type: | TLC |
Technology: | 128-layer |
Speed: | 1600 MT/s |
Capacity: | 4 chips @ 4 Tbit |
ONFI: | 4.1 |
Topology: | Charge Trap |
Die Size: | 60 mm² (8.5 Gbit/mm²) |
Dies per Chip: | 8 dies @ 512 Gbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Word Lines: |
141 per NAND String
90.8% Vertical Efficiency |
Read Time (tR): | 50 µs |
Program Time (tProg): | 620 µs |
Block Erase Time (tBERS): | 9.0 ms |
Die Read Speed: | 1280 MB/s |
Die Write Speed: | 70 MB/s |
Endurance: (up to) |
3000 P/E Cycles |
Page Size: | 16 KB |
Block Size: | 2304 Pages |
Plane Size: | 1980 Blocks |
Type: | DDR4-3200 CL22 |
---|---|
Name: | Micron MT40A512M16TB-062E:R (D8BPK) |
Capacity: |
2048 MB
(2x 1024 MB) |
Organization: | 8Gx16 |
Sequential Read: | 7,400 MB/s |
---|---|
Sequential Write: | 6,600 MB/s |
Random Read: | 1,000,000 IOPS |
Random Write: | 1,000,000 IOPS |
Endurance: | 1000 TBW |
Warranty: | 1 Year |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 1.3 |
SLC Write Cache: |
approx. 691 GB
(dynamic only) |
Speed when Cache Exhausted: | approx. 2159 MB/s |
Cache Folding Speed: | 863 MB/s |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
|
This section lists other SSDs in our database using the exact same hardware components |
NAND Die:Read Time (tR): Maximum is 50 µs, typical is lower |