Capacity: | 1 TB (1024 GB) |
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Variants: | 1 TB 2 TB |
Overprovisioning: | 70.3 GB / 7.4 % |
Production: | Active |
Released: | Jul 15th, 2021 |
Price at Launch: | 820 USD |
Part Number: | M280LX3030-1TB-RB |
Market: | Consumer |
Form Factor: | M.2 2280 (Double-Sided) |
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Interface: | PCIe 3.0 x4 |
Protocol: | NVMe 1.3 |
Power Draw: | Unknown |
Manufacturer: | Phison |
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Name: | PS5012-E12S-32 |
Architecture: | ARM 32-bit Cortex-R5 |
Core Count: | Quad-Core |
Frequency: | 667 MHz |
Foundry: | TSMC |
Process: | 12 nm |
Flash Channels: | 8 @ 667 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Micron |
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Name: | N28A FortisFlash |
Type: | pSLC |
Technology: | 96-layer |
Speed: | 800 MT/s |
Capacity: | 4 chips @ 2 Tbit |
ONFI: | 4.0 |
Topology: | Floating Gate |
Die Size: | 115 mm² (8.9 Gbit/mm²) |
Dies per Chip: | 2 dies @ 1 Tbit |
Planes per Die: | 4 |
Read Time (tR): | 90 µs |
Program Time (tProg): | 2080 µs |
Block Erase Time (tBERS): | 15 ms |
Die Write Speed: | 30 MB/s |
Endurance: (up to) |
30000 P/E Cycles |
Page Size: | 16 KB |
Block Size: | 4608 Pages |
Plane Size: | 492 Blocks |
Type: | DDR3L |
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Capacity: | 1024 MB |
Organization: | x16 |
Sequential Read: | 3,200 MB/s |
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Sequential Write: | 2,400 MB/s |
Random Read: | Unknown |
Random Write: | Unknown |
Endurance: | 10000 TBW |
Warranty: | 2 Years |
MTBF: | 1.8 Million Hours |
Drive Writes Per Day (DWPD): | 13.4 |
Write Cache: | N/A |
Speed when Cache Exhausted: | approx. 3030 MB/s |
TRIM: | Yes |
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SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Drive:This SSD is actually an 4TB QLC SSD running in pSLC Mode, so it doesn't need a pSLC Cache since the 4TB are already in pSLC mode. Controller:2 main cores using Cortex-R5 clocked at 667 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. The difference between this revision and the E12 revision is that this has a nichel IHS to improve the temperature, a smaller size, smaller node (12nm TSMC FinFET) and this works with less DRAM capacity. NAND Die:tPROG with overhead: 2080 µs (Avg 30 MB/s per die) |