Multiple hardware versions found.
Performance could vary due to unannounced flash/controller changes.
Capacity: | 2 TB (2000 GB) |
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Variants: | 1 TB 2 TB 4 TB |
Overprovisioning: | 185.4 GB / 10.0 % |
Production: | Active |
Released: | Jan 11th, 2021 |
Price at Launch: | 300 USD |
Part Number: | M280CS3140-2TB-RB |
Market: | Consumer |
Form Factor: | M.2 2280 (Double-Sided) |
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Interface: | PCIe 4.0 x4 |
Protocol: | NVMe 1.4 |
Power Draw: | Unknown |
Manufacturer: | Phison |
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Name: | PS5018-E18-41 |
Architecture: | ARM 32-bit Cortex-R5 |
Core Count: | 5-Core |
Frequency: | 1,000 MHz |
Foundry: | TSMC |
Process: | 12 nm |
Flash Channels: | 8 @ 1,600 MT/s |
Chip Enables: | 4 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Micron |
---|---|
Name: | B27B FortisFlash |
Part Number: | IA7BG64AIA |
Type: | TLC |
Technology: | 96-layer |
Speed: | 533 MT/s .. 1200 MT/s |
Capacity: | 8 chips @ 2 Tbit |
ONFI: | 4.1 |
Topology: | Floating Gate |
Dies per Chip: | 4 dies @ 512 Gbit |
Planes per Die: | 4 |
Decks per Die: | 2 |
Word Lines: |
108 per NAND String
88.9% Vertical Efficiency |
Read Time (tR): | 87 µs |
Program Time (tProg): | 800 µs |
Block Erase Time (tBERS): | 15 ms |
Die Write Speed: | 84 MB/s |
Endurance: (up to) |
3000 P/E Cycles
(40000 in SLC Mode) |
Page Size: | 16 KB |
Block Size: | 3456 Pages |
Plane Size: | 338 Blocks |
Type: | DDR4-2666 CL19 |
---|---|
Name: | SK Hynix H5AN8G6NCJR-VKC |
Capacity: |
2048 MB
(2x 1024 MB) |
Organization: | 8Gx16 |
Sequential Read: | 7,500 MB/s |
---|---|
Sequential Write: | 6,850 MB/s |
Random Read: | Unknown |
Random Write: | Unknown |
Endurance: | Unknown |
Warranty: | 5 Years |
MTBF: | 2.0 Million Hours |
SLC Write Cache: | Yes |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | Yes |
This section lists other SSDs in our database using the exact same hardware components |
Controller:3 main cores using Cortex-R5 clocked at 1000 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at a lower clock for better efficience. (200 - 300 MHz) NAND Die:tPROG - 800 µs (withouh Vpp) |