Report an Error

Sabrent Rocket 4.0 2 TB

2 TB
Capacity
Phison E16
Controller
TLC
Flash
PCIe 4.0 x4
Interface
M.2 2280
Form Factor
Back
Tom's Hardware
Back
PCB Front
Tom's Hardware
PCB Front
DRAM
Tom's Hardware
DRAM
Flash
Tom's Hardware
Flash
SSD Controller
Controller
NAND Die
NAND Die
The Sabrent Rocket 4.0 was a solid-state drive in the M.2 2280 form factor, launched on July 1st, 2019, that is no longer in production. It was available in capacities ranging from 500 GB to 2 TB. This page reports specifications for the 2 TB variant. With the rest of the system, the Sabrent Rocket 4.0 interfaces using a PCI-Express 4.0 x4 connection. The SSD controller is the PS5016-E16-32 from Phison, a DRAM cache chip is available. Sabrent has installed 96-layer TLC NAND flash on the Rocket 4.0, the flash chips are made by Toshiba. To improve write speeds, a pseudo-SLC cache is used, so bursts of incoming writes are processed more quickly. The cache is sized at 669 GB. Copying data out of the SLC cache (folding) completes at 540 MB/s. Thanks to support for the fast PCI-Express 4.0 interface, performance is excellent. The Rocket 4.0 is rated for sequential read speeds of up to 5,000 MB/s and 4,400 MB/s write; random IOPS reach up to 750K for reads and 750K for writes.
At its launch, the SSD was priced at 400 USD. The warranty length is set to five years, which is an excellent warranty period. Sabrent guarantees an endurance rating of 3600 TBW, a good value.

Solid-State-Drive

Capacity: 2 TB (2000 GB)
Variants: 500 GB 1 TB 2 TB
Overprovisioning: 185.4 GB / 10.0 %
Production: End-of-life
Released: Jul 1st, 2019
Price at Launch: 400 USD
Part Number: SB-ROCKET-NVMe4-2TB
Market: Consumer

Physical

Form Factor: M.2 2280 (Double-Sided)
Interface: PCIe 4.0 x4
Protocol: NVMe 1.3
Power Draw: 1.3 W (Idle)
4.2 W (Avg)
7.4 W (Max)

Controller

Manufacturer: Phison
Name: PS5016-E16-32
Architecture: ARM 32-bit Cortex-R5
Core Count: Quad-Core
Frequency: 733 MHz
Foundry: TSMC
Process: 28 nm
Flash Channels: 8 @ 800 MT/s
Chip Enables: 4
Controller Features: DRAM (enabled)

NAND Flash

Manufacturer: Toshiba
Name: BiCS4
Part Number: TABHG65AWV
Type: TLC
Technology: 96-layer
Speed: 800 MT/s
Capacity: 4 chips @ 4 Tbit
ONFI: 4.0
Toggle: 3.0
Topology: Charge Trap
Process: 19 nm
Die Size: 86 mm²
(6.0 Gbit/mm²)
Dies per Chip: 8 dies @ 512 Gbit
Planes per Die: 2
Decks per Die: 2
Word Lines: 109 per NAND String
88.1% Vertical Efficiency
Read Time (tR): 58 µs
Program Time (tProg): 561 µs
Die Read Speed: 551 MB/s
Die Write Speed: 57 MB/s
Endurance:
(up to)
3000 P/E Cycles
(30000 in SLC Mode)
Page Size: 16 KB
Block Size: 1152 Pages
Plane Size: 1822 Blocks

DRAM Cache

Type: DDR4-2666 CL19
Name: SK Hynix H5AN8G8NCJR-VKC
Capacity: 2048 MB
(2x 1024 MB)
Organization: 8Gx8

Performance

Sequential Read: 5,000 MB/s
Sequential Write: 4,400 MB/s
Random Read: 750,000 IOPS
Random Write: 750,000 IOPS
Endurance: 3600 TBW
Warranty: 5 Years
MTBF: 1.7 Million Hours
Drive Writes Per Day (DWPD): 1.0
SLC Write Cache: approx. 669 GB
(dynamic only)
Cache Folding Speed: 540 MB/s

Features

TRIM: Yes
SMART: Yes
Power Loss Protection: No
Encryption:
  • No
RGB Lighting: No
PS5 Compatible: Yes

Reviews

Same Drive

This section lists other SSDs in our database using the exact same hardware components

Notes

Drive:

5-year warranty, but only 1-year without registration

Controller:

2 main cores using Cortex-R5 clocked at 733 MHz with CoXProcessor technology (one additional dual-core) Cortex-R5 clocked at 200MHz ~ 300MHz for better efficience.

NAND Die:

Read latency tR: 58 µs (ABL)
tPROG with ~ 25% Overhead: ~ 750 µs (Avg - 42.7 MB/s per each die)

Nov 7th, 2024 12:33 EST change timezone

New Forum Posts

Popular Reviews

Controversial News Posts