Capacity: | 512 GB |
---|---|
Variants: | 128 GB 256 GB 512 GB |
Overprovisioning: | 35.2 GB / 7.4 % |
Production: | End-of-life |
Released: | Oct 2012 |
Price at Launch: | 600 USD |
Part Number: | MZ-7PD512 |
Market: | Consumer |
Form Factor: | 2.5" |
---|---|
Interface: | SATA 6 Gbps |
Protocol: | AHCI |
Power Draw: |
0.04 W (Idle) Unknown (Avg) 15.0 W (Max) |
Manufacturer: | Samsung |
---|---|
Name: | MDX (S4LN021X01) |
Architecture: | ARM 32-bit Cortex R4 |
Core Count: | Triple-Core |
Frequency: | 300 MHz |
Foundry: | Samsung |
Process: | 32 nm |
Flash Channels: | 8 |
Chip Enables: | 8 |
Controller Features: | DRAM (enabled) |
Manufacturer: | Samsung |
---|---|
Name: | 21nm MLC |
Part Number: | K9PHGY8U7A-CCK0 |
Type: | MLC |
Technology: | Planar |
Speed: | 166 MT/s .. 400 MT/s |
Capacity: | 8 chips @ 512 Gbit |
Toggle: | 2.0 |
Topology: | Floating Gate |
Process: | 21 nm |
Die Size: | 162 mm² (0.4 Gbit/mm²) |
Dies per Chip: | 8 dies @ 64 Gbit |
Planes per Die: | 4 |
Read Time (tR): | 60 µs |
Program Time (tProg): | 1360 µs |
Block Erase Time (tBERS): | 5.0 ms |
Die Write Speed: | 25 MB/s |
Page Size: | 8 KB |
Block Size: | 128 Pages |
Plane Size: | 2000 Blocks |
Type: | LPDDR2-1066 |
---|---|
Name: | SAMSUNG K4P4G324EB-FGC2 |
Capacity: |
512 MB
(1x 512 MB) |
Sequential Read: | 530 MB/s |
---|---|
Sequential Write: | 520 MB/s |
Random Read: | 90,000 IOPS |
Random Write: | 100,000 IOPS |
Endurance: | 73 TBW |
Warranty: | 5 Years |
MTBF: | 1.5 Million Hours |
Drive Writes Per Day (DWPD): | 0.1 |
Write Cache: | N/A |
TRIM: | Yes |
---|---|
SMART: | Yes |
Power Loss Protection: | No |
Encryption: |
|
RGB Lighting: | No |
PS5 Compatible: | No |
Controller:Controller might have support for 8 Chip enbales commands per channel. |